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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Heat Pipe Enhanced Thermal Management System for GaN Switches in an Integrated Modular Motor Drive for Aircraft Propulsion

This paper presents the process of sizing a heat pipe enhanced thermal management system (TMS) for GaN switches in an integrated modular motor drive (IMMD) powering a 250 kW aircraft propulsion electric motor. A test setup mimicking the TMS and GaN switches assembly is constructed. The condenser chamber of the TMS is modeled in ANSYS Fluent while the GaN switches assembly is modeled in ANSYS Thermal allowing us to verify heat spreader temperature under test conditions and estimate GaN temperatures under test and actual application operating conditions.

DIRECT ENERGY CONVERSION↗
DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, and noise figure. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

high power amplifier↗
NASA NTRS2022

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

Rainee N. Simons↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

High power amplifier↗
NASA NTRS2020

Soft-Switching GaN-Based Isolated Power Conversion System for Small Satellites with Wide Input Voltage Range

As we pursue the advancement of small satellites for space missions with more capabilities, there is a significant need for cutting-edge, modularly configurable, high density power converters. This article proposes a fixed switching frequency, high efficiency, compact isolated converter for sensitive loads such as radar, communication systems, or other instruments on small satellites.

Cook, Tom↗
NASA NTRS2020

A GaN-based Four-Switch Buck-Boost Converter using Ripple Correlation Control for Maximum Power Point Tracking in Dynamic Deep Space Environments

As the demand for high-performance power conversion in spacecraft continues to grow and spacecraft mass and volume budgets become increasingly tight, it is essential to design DC-DC converters with higher efficiency and power density. Although photovoltaic (PV) efficiency has increased over time, solar irradiance and temperatures can fluctuate dramatically in deep space. This causes significant variations in the maximum power point (MPP) of the PV array, which can decrease the overall system efficiency unless accounted for. Thus, it is imperative to track the MPP of the PV panels to maintain optimal efficiency. This paper presents the experimental development of a four-switch, GaN-based buck-boost converter with an implementation of the Ripple Correlation Control (RCC) MPPT algorithm for dynamic deep space environments. Due to the use of GaN HEMTs, the experimental system achieves better efficiency and power density compared to the previous state of the art implementations. A simulation of the prototype buck-boost converter was implemented in SaberRD (Synopsis), and a digital design of the RCC-based MPPT controller utilizing the StateAMS tool is presented. The simulation results show that this controller swiftly and precisely converged to the MPP of the source PV panels in a dynamic solar irradiance condition.

Mahmud, Sadab↗
DOE OSTI2020

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗
DOE OSTI2021

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗
DOE OSTI2022

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗
DOE OSTI2023

Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications

This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50 W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaN-based DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.

active cell balancing↗
DOE OSTI2023

Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications: Preprint

This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaNbased DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.

active cell balancing↗
DOE OSTI2025

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗
NASA NTRSDate not supplied

Design of 1 kW Simplified Stirling Controller Using Capacitor-Based Power Factor Correction

Free-piston Stirling convertors hold potential for efficient, reliable thermal to electric power conversion, provided they are paired with a robust controller. This paper outlines work underway on a system-level optimization of a kW controller. Using simplified control and passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is improved through incorporating wide-bandgap gallium nitride (GaN) switches, and PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling space power concepts.

Stirling↗
NASA NTRSDate not supplied

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗