Crystal growth by vapor transport of GeSe, GeSe2, and GeTe and transport mechanism and morphology of GeTe.
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Wiedemeier, H.↗
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Mass spectroscopic characterization of the GeSe:GeI4 vapor transport system
The GeSe:GeI4 vapor crystal growth system was characterized mass spectroscopically. A steady-state Knudsen effusion technique was developed to simulate the equilibrium conditions at one end of a vapor transport ampoule. It was found that the previously neglected equilibrium GeSe2(s) = GeSe(v) + 1/2Se2(v) reduces the Se2(v) concentration to an extent that sublimation/condensation of GeSe becomes the dominant transport mechanism. At total pressures near 1 atm the concentration of an additional Ge-Se-I vapor species becomes comparable to that of GeSe(v).
Buchan, Nicholas I.↗
On the mass transport properties of the GeSe-GeI4 system under normal and reduced gravity conditions
Previous work on the mass transport rate of the GeSe-GeI4 system has been reevaluated using the mass spectrometric results of Buchan and Rosenberger (1987), and considering the presence of GeSe(s) and GeSe2(s) phases in the source material. The present transport rate study confirms the previously derived dominance of the sublimation of GeSe at lower pressures of GeI4, and of chemical vapor transport at higher pressures of GeI4. It is noted that experimentally observed flux anomalies are model-independent.
Palosz, Witold↗