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DOE OSTI2025

Molecular-dynamics study of diffusional creep in uranium mononitride

Uranium mononitride (UN) is a promising advanced nuclear fuel due to its high thermal conductivity and high fissile density. Yet, many aspects of its mechanical behavior and microstructural features are currently unknown. In this paper, molecular dynamics (MD) simulations are used to study UN's diffusional creep. Nanometer-sized polycrystals are used to simulate diffusional creep and to calculate an effective GB width. It is found that Nabarro-Herring creep is not dominant in the temperature range of 1700–2000 K and that the dominant diffusional creep mechanism is Coble creep with an activation energy of 2.28 ± 0.09 eV. A method is proposed to calculate the diffusional GB width and its temperature dependence in polycrystals. The effective GB width of UN is calculated as 2.69 ± 0.08 nm. This value fits very well with the prefactor of the phenomenological Coble creep formula. It is demonstrated that the most comprehensive thermal creep model for UN can be represented as the combination of our Coble creep model and the dislocation creep model proposed by Hayes et al.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2020

Grain-boundary structure and segregation in Nb 3 Sn coatings on Nb for high-performance superconducting radiofrequency cavity applications

Here, we report on atomic-scale analyses of grain boundary (GB) structures and segregation in Nb 3 Sn coatings on Nb, prepared by the vapor-diffusion process, for superconducting radiofrequency (SRF) cavity applications, utilizing atom-probe tomography, high-resolution scanning transmission electron-microscopy and first-principles calculations. We demonstrate that the chemical composition of Nb 3 Sn GBs is correlated strongly with the diffusion of Sn and Nb at GBs during the coating process. In a sample coated with a relatively large Sn flux, we observe an interfacial width of Sn segregation at a GB of ~3 nm, with a maximum concentration of ~35 at.%. After post-annealing at 1100 °C for 3 h, the Sn segregated at GBs disappears and Nb segregation is observed subsequently at GBs, indicating that Nb diffused into the Nb3Sn GBs from the Nb substrate. It is also demonstrated that the amount of Sn segregation in a Nb 3 Sn coating can be controlled by: (i) Sn flux; and (ii) the temperatures of the Nb substrates and Sn source, which may affect the overall kinetics including GB diffusion of Sn and Nb. An investigation of the correlation between the chemical compositions of GBs and Nb 3 Sn SRF cavity performance reveals that the Nb 3 Sn SRF cavities with the best performance (high-quality factors at high accelerating electric-field gradients) do not exhibit Sn segregation at GBs. Our results suggest that the chemical compositions of GBs in Nb 3 Sn coatings for SRF cavities can be controlled by GB engineering and can be utilized to optimize fabrication of high-quality Nb 3 Sn coatings for SRF cavities.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Improving creep resistance of Al-0.27Zr-0.08Sn (wt%) via cold swaging while maintaining high electrical conductivity

This study investigates the effect of mechanical cold work (0, 50, and 90% cross-sectional area reduction via swaging) on the creep properties of cast aluminum alloys with high electrical conductivity including high-purity Al (HP-Al), Al-0.15Zr (Al-Zr), and Al-0.27Zr-0.08Sn (Al-Zr-Sn, wt%). The Al-Zr alloy is strengthened by Zr in solid solution while the Al-Zr-Sn alloy is additionally strengthened by Al3Zr nanoprecipitates (8 nm diameter). After 90% cold swaging, the alloys exhibit grains elongated along the swaging direction with their widths ranging between 8 and 152 μm perpendicular to the swaging direction. Creep testing at 200 °C shows that the minimum creep rate of all 90% swaged alloys shows high sensitivity to stress, which can be modeled via a threshold stress σth. Increasing swaging magnitude from 0 to 50 to 90% in Al-Zr-Sn improves the creep resistance without reducing electrical conductivity. The formation of subgrains, increased dislocation density, and columnar grain structure in swaged alloys all enhance creep resistance. HP-Al swaged to 90% exhibits much lower creep resistance (σth = 18 MPa) due to subgrain coarsening and the absence of precipitates compared to Al-Zr (σth = 40 MPa) and Al-Zr-Sn (σth = 40 MPa), which maintain stable subgrain structures and benefit from solid solution strengthening and Al3Zr nanoprecipitates, respectively. Although Al3Zr precipitates are known to stabilize the deformed microstructure by pinning grain-boundaries, this work demonstrates that Zr in solid solution alone can effectively stabilize the deformed microstructure resulting in enhanced creep resistance. This effect of Zr solute on stabilizing grain boundaries for creep performance was not previously well-defined in the literature. Despite similar creep performances of Al-Zr and Al-Zr-Sn, the latter shows 70% higher room-temperature microhardness and slightly improved electrical conductivity (56%IACS (International Annealed Copper Standard) vs. 57%IACS, respectively). This work provides new insights into creep mechanisms of cold-worked Al–Zr alloys that will guide the design of heat-resistant Al conductors for high-demand applications.

Coello ramirez, Ismael [Northwestern University,]↗