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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗
NASA NTRS2005

HEMT Frequency Doubler with Output at 300 GHz

An active frequency doubler in the form of an InP-based monolithic microwave integrated circuit (MMIC) containing a high-electron-mobility transistor (HEMT) has been demonstrated in operation at output frequencies in the vicinity of 300 GHz. This is the highestfrequency HEMT doubler reported to date, the next-highest-frequency active HEMT doubler having been previously reported to operate at 180 GHz. While the output power of this frequency doubler is less than that of a typical Schottky diode, this frequency doubler is considered an intermediate product of a continuing effort to realize the potential of active HEMT frequency doublers to operate with conversion efficiencies greater than those of passive diode frequency doublers. An additional incentive for developing active HEMT frequency doublers lies in the fact that they can be integrated with amplifiers, oscillators, and other circuitry on MMIC chips. The circuitry of the doubler MMIC (see Figure 1) features grounded coplanar waveguides. Air bridges and vias are used to make contact with the ground plane. The HEMT is biased for Class-A operation (in which current is conducted throughout each cycle of oscillation), which would ordinarily be better suited to linear amplification than to frequency doubling. Ordinarily, class-B operation (in which current is conducted during about half of each cycle of oscillation) would be more suitable for frequency doubling because of the essential nonlinearity of partial-cycle conduction. The reason for the unusual choice of class A was that computational simulations had shown that in this case, the efficiency in class B would be less than in class A. The input matching circuit of this doubler includes transmission lines that afford a good impedance match at the fundamental frequency, plus an open stub to prevent leakage of the second harmonic through the input terminals. The output circuit was designed to suppress the fundamental while providing a good match for the second harmonic.

Samoska, Lorene↗
NASA NTRS2006

Deep Space Network, Cryogenic HEMT LNAs

Exploration of the Solar System with automated spacecraft that are more than ten astronomical units (1 AU = 149,597,870.691 km) from earth requires very large antennae employing extremely sensitive receivers. A key figure of merit in the specification of the spacecraft-to-earth telecommunications link is the ratio of the antenna gain to operatio nal noise temperature (G/Top) of the system. The Deep Space Network (DSN) receivers are cryogenic, low-noise amplifiers (LNAs) which addres s the need to maintain Top as low as technology permits. Historicall y, the extra-ordinarily sensitive receive systems operated by the DSN have required ctyogenically cooled, ruby masers, operating at a physi cal temperature near the boiling point of helium, as the LNA. Althoug h masers continue to be used today, they are hand crafted at JPL and expensive to manufacture and maintain. Recent advances in the developm ent of indium phosphide (InP) based high electron mobility transistor s (HEMTs) combined with cryogenic cooling near the boiling point of h ydrogen have made this alternate technology comparable with and a fraction of the cost of maser technology. InP HEMT LNA modules are demons trating noise temperatures less than ten times the quantum noise limi t (10hf/k) from 1 to 100 GHz. To date, the lowest noise LNA modules developed for the DSN have demonstrated noise temperatures of 3.5 K and 8.5 K at 8.5 K at 32 GHz, respectively. Front-end receiver packages employing these modules have demonstrated operating system noise temperatures of 17 K at 8.4 GHz (on a 70m antenna at zenith) and 39 K at 3 2 GHz (on a 34m antenna at zenith). The development and demonstration of cryogenic, InP HEMT based front-end amplifiers for the DSN requir es accurate component and module characterization, and modeling from 1 to 100 GHz at physical temperatures down to 12 K. The characterizati on and modeling begins with the HEMT chip, proceeds to the multi-stag e HEMT LNA module, and culminates with the complete front-end cryogenic receiver package for the antenna. This presentation will provide a n overview of this development process. Examples will be shown for de vices, LNA modules, front-end receiver packages, antennae employing these packages and the improvements to the down-link capacity.

low-noise amplifiers (LNAs)↗
NASA NTRS2003

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗
NASA NTRS1988

High-performance Ka-band and V-band HEMT low-noise amplifiers

Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB at 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver applications.

Duh, K. H. George↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS1992

A study of subterahertz HEMT monolithic oscillators

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max).

Kwon, Youngwoo↗
NASA NTRS1992

Dimension scaling effects on the yield sensitivity of HEMT digital circuits

In our previous works, using a graphical tool, yield factor histograms, we studied the yield sensitivity of High Electron Mobility Transistors (HEMT) and HEMT circuit performance with the variation of process parameters. This work studies the scaling effects of process parameters on yield sensitivity of HEMT digital circuits. The results from two HEMT circuits are presented.

Sarker, Jogendra C.↗
NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗
NASA NTRS2010

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

Radisic, Vesna↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
NASA NTRS1991

Frequency-dependent characteristics and trap studies of lattice-matched (x = 0.53) and strained (x greater than 0.53) In(0.52)Al(0.48)As/In(x)Ga(1-x)As HEMT's

The low-frequency characteristics of InAlAs/In(x)Ga(1-x)As high-electron-mobility transistors (HEMTs) are studied, and trap densities are evaluated. The HEMTs' transconductance g(m) and output resistance R(ds) dispersion are smallest for 60 percent indium (In) content and largest for 53 percent In. The maximum dispersion for the 53 percent In sample is about 6 percent for g(m) and about 13.3 percent for R(ds), corresponding to lower values than observed in MESFETs. The R(ds) dispersion characteristics are weaker than in AlGaAs/GaAs HEMTs and manifest themselves primarily up to 100 kHz. An analysis of the dispersion results indicates that, unlike in the case of MESFETs, the channel region under the gate rather than the access regions is responsible for the dispersion. Interface state densities were extracted by the AC conductance method and were found to follow the same trend as the g(m) and R(ds) dispersion.

Ng, Geok-Ing↗
NASA NTRS1991

A cooled 1-2 GHz balanced HEMT amplifier

The design details and measurement results for a cooled 1-GHz-bandwidth L-band HEMT amplifier are presented. The HEMT noise parameters were measured at a physical temperature of 12 K, and a balanced configuration was adopted. This has the advantage of providing a good input match even though the amplifiers in the two arms of the balanced circuit are poorly matched. However, there are disadvantages. The loss of the input hybrid degrades the noise temperature and coupling errors in the hybrids, and differences between the amplifiers reduce the gain and result in a noise contribution from the input load. In the amplifier described, these effects degrade the noise temperature by less than 1 K. The amplifier uses commercially available packaged HEMT devices. At a physical temperature of 12 K the amplifier achieves noise temperatures between 3 and 6 K over the 1-2-GHz band. The associated gain is about 20 dB.

Padin, Stephen↗
NASA NTRS1993

An x-band peeled HEMT amplifier

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Young, Paul G.↗
NASA NTRS1995

A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

Wilkinson, David T.↗
NASA NTRS1993

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗
NASA NTRS1998

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗
NASA NTRS1993

A Monolithic W-Band Three-Stage LNA Using 0.1 Micron InAlAs/InGaAs/InP HEMT Technology

A monolithic W-band three-stage Low Noise Amplifiers (LNA) based on 0.1 um pseudomorphic InAlAs/InGaAs/InP (High Electron Mobility Transistors (HEMTs) has been developed. this LNA demonstrated a noise figure of 4.3 dB and an associated small signal gain of 19 dB at 100 GHz with a low dc power consumption of 20 mW. This is the best reported monolithic W-band LNA performance using InP-based HEMT technology and demonstrates the potential of InP HEMT technology for higher millimeter-wave applications.

Wang, H.↗