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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
DOE OSTI2017

GaP/GaNP Heterojunctions for Efficient Solar‐Driven Water Oxidation

The growth and characterization of an n‐GaP/i‐GaNP/p + ‐GaP thin film heterojunction synthesized using a gas‐source molecular beam epitaxy (MBE) method, and its application for efficient solar‐driven water oxidation is reported. The TiO 2 /Ni passivated n‐GaP/i‐GaNP/p + ‐GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO 2 /Ni‐coated n‐GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.34 mA cm −2 , leading to an onset potential of ≈0.4 V versus reversible hydrogen electrode (RHE) at 0.34 mA cm −2 for the heterojunction. The photocurrent at the water oxidation potential (1.23 V vs RHE) is 1.46 and 7.26 mA cm −2 for the coated n‐GaP and n‐GaP/i‐GaNP/p + ‐GaP photoanodes, respectively. The passivated heterojunction offers a maximum applied bias photon‐to‐current efficiency (ABPE) of 1.9% while the ABPE of the coated n‐GaP sample is almost zero. Furthermore, the coated n‐GaP/i‐GaNP/p + ‐GaP heterojunction photoanode provides a broad absorption spectrum up to ≈620 nm with incident photon‐to‐current efficiencies (IPCEs) of over 40% from ≈400 to ≈560 nm. The high low‐bias performance and broad absorption of the wide‐bandgap GaP/GaNP heterojunctions render them as a promising photoanode material for tandem photoelectrochemical (PEC) cells to carry out overall solar water splitting.

Kargar, Alireza↗
DOE OSTI2018

Electronic Structure and Band Alignment of LaMnO 3 /SrTiO 3 Polar/Nonpolar Heterojunctions

The behavior of polar LaMnO3 (LMO) thin films deposited epitaxially on non-polar SrTiO3(001) (STO) is dictated by both the LMO/STO band alignment and the chemistry of the Mn cation. Using in situ x-ray photoelectron spectros-copy (XPS), we directly measure the valence band offset (VBO) of LMO/STO heterojunctions as a function of thickness, and find that the VBO is 2.5 eV for thicker (= 3 u.c.) films. We find no evidence of a built-in potential in LMO films of any thickness. Measurements of the Mn valence by Mn L-edge x-ray absorption spectroscopy (XAS) and by spatially-resolved electron energy loss spectra in scanning transmission electron microscopy images (STEM-EELS) reveal that Mn2+ is present at the LMO surface, but not at the LMO/STO interface. These results are corroborated by DFT simula-tions that confirm a VBO of approximately 2.5 eV for both ideal and intermixed interfaces. We propose a model for the behavior of polar / non-polar LMO/STO heterojunctions in which the built-in potential is alleviated by the formation of oxygen vacancies at the LMO surface.

Kaspar, Tiffany C.↗
DOE OSTI2016

Enhanced photocatalytic and photoelectrochemical activities of reduced TiO 2-x /BiOCl heterojunctions

A key issue to design highly efficient photoelectrodes for hydrogen production is how to prohibit the rapid carrier recombination. In order to use the visible light and reduce the recombination of electrons and holes, reduced TiO 2-x /BiOCl heterojunctions are successfully synthesized and the photoelectrodes are assembled in this work. The effects of various Bi/Ti molar ratios on the structural, morphological, optical, photoelectrochemical and photocatalytic activities of the resultant samples are investigated systematically. The TiO 2-x nanoparticles contain Ti 3+ , Ti 2+ , and oxygen vacancies (Ov), while the BiOCl nanosheets exposed {001} facet. Ultraviolet–visible diffuse reflectance spectroscopy (UV–vis DRS) results indicate that the existence of Ti 3+ , Ti 2+ and Ov expand the light-response range. Linear scan voltammetry and electrochemical impedance spectroscopy results indicate that more efficient electron transportation is presented in the heterojunctions with the appropriate Bi/Ti molar ratio. Consequently, the reduced TiO 2-x /BiOCl heterojunction with the most appropriate Bi/Ti molar ratio exhibits a high photocurrent density of 0.755 mA cm -2 with photoconversion efficiency up to 0.634%, 10.5 and 22.6 times larger than that of pure TiO 2 and BiOCl. Furthermore, this heterojunction exhibit 48.38 and 12.54 times enhancement for the visible-light decomposition of rhodamine B compared with pure TiO 2 and BiOCl.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Determining interface properties limiting open-circuit voltage in heterojunction solar cells

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (V OC ) as a result of the interface is a critical step in evaluating a new material. In this work, we fabricate thin-film PV devices using cuprous oxide (Cu 2 O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensties ( JVTi ). We quantify the loss in V OC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

14 SOLAR ENERGY↗
DOE OSTI2023

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗
DOE OSTI2019

Epitaxial Growth and Band Alignment of p-NiO/n-Fe2O3 Heterojunction on Al2O3(0001)

Fe2O3 is one of the promising oxide semiconductors as photoanodes for photoelectrochemical water splitting, but its efficiency is still limited by the short diffusion length of photo-excited carriers. Using the internal electric field formed at a p-n heterojunction (HJ) is an efficient strategy to mitigate such limitation. Accordingly, the interfacial atomic structure and band alignment are the most crucial parameters for efficiency optimization. In this work, we report on the epitaxial growth and determination of the band energy alignment of NiO/Fe2O3 p-n heterojunction grown on Al2O3(0001) substrate by pulsed laser deposition. We show that high crystalline quality NiO(111) thin films can be grown on Fe2O3(0001) with epitaxial relationships of [1 ¯11]NiO||[0001 ¯ ]Fe2O3(out-of-plane), [1 ¯1 ¯0]NiO||[011 ¯0]Fe2O3 and [1 ¯12 ¯ ]NiO||[21 ¯1 ¯0]Fe2O3(in-plane). The rotation of NiO hexagons by 30° can effectively reduce the lattice mismatch from ~17.4% to ~1.58%. High resolution X-ray photoelectron spectroscopy reveals that valence and conduction band offset of NiO/Fe2O3 heterojunction are 0.7 eV and 2.3 eV with an upward band bending potential of 0.23 eV for Fe2O3 and a downward band bending potential of 0.32 eV for NiO, respectively. This kind of interfacial band alignment not only facilitates the charge separation, but lowers the overpotentials for oxygen evolution reaction.

Photoelectrochemical Water Splitting, Oxide Semico↗
DOE OSTI2017

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.

42 ENGINEERING↗
DOE OSTI2016

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Polymer Solar Cells with 18.74% Efficiency: From Bulk Heterojunction to Interdigitated Bulk Heterojunction

The most popular approach to fabricating organic solar cells (OSCs) is solution processing a mixture of donor (D) and acceptor (A) materials into an active layer with a bulk heterojunction (BHJ) nanostructure. In this work, it is demonstrated that the interdigitated heterojunction (IHJ) is a more suitable nanostructure of the active layer for high-performance OSCs whereas it is a long standing challenge to realize well-defined IHJ structures. Here, a facile and versatile sequential solution processing method is developed to produce an IHJ nanostructure with power conversion efficiency reaching 18.74% (18.10% for BHJ the counterpart) by fabricating a donor film with nanopores created by a wax additive, sequentially casting the acceptor on top of infiltrating the nanopores. Compared to the BHJ, the IHJ structure with an interpillar distance within the exciton diffusion length can afford a large bulk D/A interface for efficient exciton dissociation with a minimized charge recombination while free electrons and holes can transport to the respective electrodes through more straightforward pathways, thus enhance performance. Furthermore, the D or A phase in the IHJ device contacts with only one electrode, which can prevent shunting between the anode and cathode and facilitate the industrial mass production of OSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

π-Extended Porphyrin–Phthalocyanine Heterojunction Devices Exhibiting High Ammonia Sensitivity with a Remarkable Light Effect

π-Extended porphyrins represent an attractive class of organic compounds because of their unique photophysical, optoelectronic, and physicochemical properties. Herein, cross-conjugated (Ace-PQ-Ni) and linear-conjugated (AM6) porphyrins are used to build double-layer heterojunction devices by combining them with a lutetium bisphthalocyanine complex (LuPc 2 ). The heterojunction effect at the porphyrin–phthalocyanine interface plays a key role in the charge transport properties. Both devices exhibit exceptionally high ammonia sensitivity at room temperature and under ambient relative humidity, with limit of detection values of 156 and 115 ppb for Ace-PQ-Ni/LuPc 2 and AM6/LuPc 2 sensors, respectively. Interestingly, the Ace-PQ-Ni/LuPc 2 and AM6/LuPc 2 sensors display opposite effects upon light illumination. While the former sensors show largely decreased ammonia sensitivity under light illumination, the current variation of the latter under ammonia is remarkably enhanced with a multiplication factor of 13 and a limit of detection (LOD) of 83 ppb. Here, the striking difference in their sensing properties upon light illumination is attributed to their different π-conjugation pathways (cross-conjugation versus linear conjugation).

conductometric transducer↗
DOE OSTI2022

Silicon Heterojunction Field Performance

The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2017

A new strategy to engineer polymer bulk heterojunction solar cells with thick active layers via self-assembly of the tertiary columnar phase

Here, we report that the addition of a non-photoactive tertiary polymer phase in the binary bulk heterojunction (BHJ) polymer solar cell leads to a self-assembled columnar nanostructure, enhancing the charge mobilities and photovoltaic efficiency with surprisingly increased optimal active blend thicknesses over 300 nm, 3–4 times larger than that of the binary counterpart. Using the prototypical poly(3-hexylthiophene) (P3HT):fullerene blend as a model BHJ system, we discover that the inert poly(methyl methacrylate) (PMMA) added in the binary BHJ blend self-assembles into vertical columns, which not only template the phase segregation of electron acceptor fullerenes but also induce the out-of-plane rotation of the edge-on-orientated crystalline P3HT phase. Using complementary interrogation methods including neutron reflectivity, X-ray scattering, atomic force microscopy, transmission electron microscopy, and molecular dynamics simulations, we show that the enhanced charge transport originates from the more randomized molecular stacking of the P3HT phase and the spontaneous segregation of fullerenes at the P3HT/PMMA interface, driven by the high surface tension between the two polymeric components. The results demonstrate a potential method for increasing the thicknesses of high-performance polymer BHJ solar cells with improved photovoltaic efficiency, alleviating the burden of stringently controlling the ultrathin blend thickness during the roll-to-roll-type large-area manufacturing environment.

77 NANOSCIENCE AND NANOTECHNOLOGY↗