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Materials Data on HIO3 by Materials Project

HIO3 crystallizes in the orthorhombic P2_12_12_1 space group. The structure is one-dimensional and consists of two HIO3 ribbons oriented in the (0, 1, 0) direction. H1+ is bonded in a single-bond geometry to two O2- atoms. There is one shorter (1.01 Å) and one longer (1.71 Å) H–O bond length. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a 3-coordinate geometry to one H1+ and two equivalent I5+ atoms. There are one shorter (1.85 Å) and one longer (2.48 Å) O–I bond lengths. In the second O2- site, O2- is bonded in a distorted single-bond geometry to one H1+ and one I5+ atom. The O–I bond length is 1.93 Å. In the third O2- site, O2- is bonded in a distorted single-bond geometry to one I5+ atom. The O–I bond length is 1.81 Å. I5+ is bonded in a 5-coordinate geometry to four O2- atoms.

36 MATERIALS SCIENCE↗

Materials Data on HIO3 by Materials Project

HIO3 is alpha Niobium phosphide-derived structured and crystallizes in the orthorhombic Pbca space group. The structure is zero-dimensional and consists of four HIO3 clusters. H1+ is bonded in a single-bond geometry to two O2- atoms. There is one shorter (1.01 Å) and one longer (1.71 Å) H–O bond length. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted single-bond geometry to one I5+ atom. The O–I bond length is 1.84 Å. In the second O2- site, O2- is bonded in a distorted single-bond geometry to one H1+ and one I5+ atom. The O–I bond length is 1.91 Å. In the third O2- site, O2- is bonded in a 1-coordinate geometry to one H1+ and one I5+ atom. The O–I bond length is 1.82 Å. I5+ is bonded in a 6-coordinate geometry to three O2- atoms.

36 MATERIALS SCIENCE↗

Plasma deposited silicon nitride for indium phosphide encapsulation

The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

Valco, G. J.↗

Numerical simulation of iodine speciation in relation to water disinfection aboard manned spacecraft I. Equilibria

Elemental iodine (I2) is currently used as the drinking water disinfectant aboard the Shuttle Orbiter and will also be incorporated into the water recovery and distribution system for the International Space Station Alpha. Controlled release of I2 is achieved using the Microbial Check Valve (MCV), a flow-through device containing an iodinated polymer which imparts a bacteriostatic residual concentration of approximately 2mg/L to the aqueous stream. During regeneration of MCV canisters, I2 concentrations of approximately 300 mg/L are used. Dissolved iodine undergoes a series of hydrolytic disproportionation and related reactions which result in the formation of an array of inorganic species including: I-, I3-, HOI, OI-, IO3-, HIO3, I2OH-, I2O(-2), and H2OI+. Numerical estimation of the steady-state distribution of inorganic iodine containing species in pure water at 25 degrees C has been achieved by simultaneous solution of the multiple equilibrium expressions as a function of pH. The results are reported herein.

NASA Discipline Environmental Health↗