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Acceleration factor of thermonuclear reactions in compressed hydrogen plasma
In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.
In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.
Hydrogen plasma increases efficiency by strategically using energy to break bonds within the regolith to liberate oxygen instead of heating the entire bed of regolith. The energy used by the plasma system would be imparted into the H2 gas, forming highly energetic ions, electrons, and neutrals that would interact with the regolith surface. The energized atomic and ionic H2 provide the energy needed to make reduction of SiO2 (Silicon Dioxide) and other regolith mineral oxides favorable. What’s more, the high-energy plasma interaction occurs in a small, localized volume, and thus requires relatively little energy. The lunar regolith is well-suited for the process as the fine particles naturally available provide a high surface area for the plasma to interact with. The process would require a system to collect the regolith composed of metal oxides (MxOy) and load it into a reactor. An H2 plasma would pass over the surface (potentially at a low pressure, reducing complexity of the system as it would not require large increases in pressure from the lunar vacuum), then the gases from the plasma reaction would be collected and processed, and the spent regolith would be carried away. The gross reaction temperature would be near ambient (due to the localized nature of the plasma), eliminating the necessity of a regolith heating mechanism or handling of molten regolith. Also, the H2 used in the plasma could be subsequently recovered from the water produced by the plasma reaction. Thus, this approach would not require significant amounts of added commodities.
Production of superheated hydrogen plasma by induction heating of cold plasma and direct current plasma enhancement
Seeded argon-hydrogen plasmas have been produced at Georgia Tech in order to experimentally measure composition, temperature, radiant heat output and opacity. The plasma, seeded with submicron tungsten particles, simulates the propellant of a gaseous core nuclear rocket. These measurements are needed to predict the dynamic behavior of the operating gas core reactor. The temperature range in which the seed has vaporized but the hydrogen itself has not yet become opaque is known as the seed-hydrogen opacity window. Preliminary opacity data in this temperature range will be presented.
Hydrogen plasma ionization density calculation by three methods
Electromagnetic wave propagation in cold, collisionless atomic hydrogen plasma
Steady state composition of low density nonequilibrium hydrogen plasma
Transverse wave instabilities in collisionless hydrogen plasmas under magnetic field
Statistical mechanics of partially ionized hydrogen plasma, deriving Saha equation to calculate ionization degree and potential for various electron densities and temperature
R.f. power transfer to a hydrogen plasma at frequencies near the ion cyclotron frequency
The formalism for the calculation of the absorption of radiation by a hydrogen plasma at common laboratory conditions is summarized. The hydrogen plasma absorption coefficient for laser radiation has been computed for a wide range of electron densities and temperatures (10,000-40,000 K). The results of this computation are presented in a graphical form that permits a determination of the absorption coefficient for the following laser wavelengths: 0.176, 0.325, 0.337, 0.442, 0.488, 0.515, 0.633, 0.694, 1.06, 1.15, 2.36, 3.39, 5.40 and 10.6 microns. The application of these results and laser radiation absorption measurements to plasma diagnostics is discussed briefly.
Addition of electromagnetic wave energy to atomic hydrogen plasma at off-resonant conditions
Number densities of hydrogen species in hydrogen plasma - tables
Energy transfer and ion cost in hydrogen plasma
The contribution of molecular dissociative processes to the production of atomic lines is considered for a steady-state hydrogen plasma. If the contribution of dissociative processes is dominant, a substantial simplification in plasma diagnostics can be achieved. Numerical calculations have been performed for the production of Balmer alpha, beta, and gamma lines in hydrogen plasmas with medium and large degrees of ionization (x greater than about 0.0001) and for electron temperatures of 5000-45,000 K and electron densities of 10 to the 10th to 10 to the 16th/cu cm.
The effect of the calculation of the cluster integrals on three particles is analyzed and evaluated for a hydrogen plasma where a pairwise-additive hard sphere-Coulomb potential is assumed. The Mayer cluster integral method was used to calculate the Helmholtz free energy which was then applied to the calculation of the electron number density through an iterative technique using a corrected Saha equation. It is seen that the three particle integrals provide a substantial correction to the calculations in the low energy-high density region of the hydrogen plasma.