SEARCH · Search NASA
Results for “Hall measurements”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Low cost switching circuit for van der Pauw resistivity and Hall measurements at various temperatures
The electrical characterization of materials, particularly superconductors, semiconductors, and those undergoing metal-insulator transitions (MITs), relies significantly on resistivity and Hall measurements as a function of temperature. The van der Pauw four-point probe method is commonly used for such measurements, which involves resistance measurements for different circuit configurations connected to sample contacts. However, repeating these measurements at different temperatures is challenging and time consuming. Here, this study introduces a novel approach utilizing a switching circuit controlled by an Arduino device and a LabVIEW program to automate resistance measurements for different electrical configurations. The effectiveness of this setup was demonstrated by testing V 2 O 3 thin film samples deposited on Al 2 O 3 (001) substrates using DC magnetron sputtering. The MIT temperature of the sample was 115 K during heating and 100 K during cooling. The sample exhibited p-type charge carriers with a Hall coefficient of 1.3 ± 0.1 x 10 -4 cm 3 /C and Hall mobility of 1.7 x 10 -1 cm 2 /V∙s, which is consistent with findings from other studies employing commercial equipment.
Resistivity and Hall measurements of thermoelectric materials
Instrumentation setup measures resistivity values between .000003 and 100,000 ohm-cm and Hall values between 0.2 and 10 billion cc/coulomb, with an absolute error of less than 5 percent. Results of measurement are given for 8 electrical brush specimens and pure silver.
Large exotic spin torques in antiferromagnetic iron rhodium.
Spin torque is a promising tool for driving magnetization dynamics for computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance (ST-FMR) measurements and second harmonic Hall measurements characterizing the spin torques in anti -ferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (207 +/- 94)% at 170 K and (88 +/- 32)% at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques.
Measurement of Hall's current in a homopolar device
Measurement of ratio of Hall current density to radial current density
Evaluation of PbTe and SnTe as Ohmic Contact Layers in CdTe Solar Cell Devices
For solar cells based on CdTe, the choice of a suitable back contact material is limited by CdTe's deep work function. Here, we explored p-type PbTe and SnTe as ohmic contacts to CdTe. These contact layers were grown on single crystal CdTe substrates by molecular beam epitaxy, and the valence band offset between film and substrate was measured using X-ray photoemission spectroscopy. Polycrystalline device structures were also grown by sublimation to assess performance improvements. Doping was achieved in PbTe by thallium incorporation. Only the highest Tl doped PbTe resulted in a desirable band alignment with the CdTe, forming an electron reflector and no hole barrier. Time-resolved photoluminescence measurements also revealed significant photocarrier lifetime improvements for only the highest doped PbTe. Consequentially, devices incorporating the highest doped PbTe layers showed increased power conversion efficiency, primarily from increased fill factor. Doping of the PbTe was measured via Hall effect with variable magnetic field, which was required due to the formation of an n-type parasitic interface layer. To properly interpret the variable field Hall measurements, we derived an expression for the magnetic field-dependent conductivity tensor of an L-valley semiconductor.
Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure
Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.
Hall current measuring apparatus having a series resistor for temperature compensation Patent
Current measurement by use of Hall effect generator
A theoretical study of Hall parameter measurements with an immersible three-coil conductivity/velocity plasma probe Final report, 1 Oct. 1969 - 1 Apr. 1970
Hall parameter measurements with immersible three coil conductivity/velocity plasma probe
Sample shape and boundary dependence of measured transverse thermal properties
In spite of increased interest in thermal Hall measurements for the analysis of insulating quantum materials, there remains large uncertainty in such measurements due to contact misalignment. In this paper, we propose that sample geometry and uncertain boundary conditions provide an additional source of uncertainty in the measurement of $D_{xy}$ or $κ_{xy}$. By running simple simulations in an open source finite-element solver, we demonstrate that measured $D_{xy}$ can be changed by a non-negligible fraction in samples with similar width and length. This geometric corrective factor depends on the distinction between a uniform heat flow and constant temperature boundary couplings to a bath. Sample geometry and boundary conditions can be accounted for through simulation or by using rectangular samples to make thermal Hall measurements more reliable and reproducible. Finally, we detail a contactless optical method for measuring $D_{xy}$ based on an existing photothermal microscope technique. This method is insensitive to the longitudinal diffusivity pollution caused by contact misalignment.
The Inner Structure of Collisionless Magnetic Reconnection: The Electron-Frame Dissipation Measure and Hall Fields
It was recently proposed that the electron-frame dissipation measure, the energy transfer from the electromagnetic field to plasmas in the electron s rest frame, identifies the dissipation region of collisionless magnetic reconnection [Zenitani et al., Phys. Rev. Lett. 106, 195003 (2011)]. The measure is further applied to the electron-scale structures of antiparallel reconnection, by using two-dimensional particle-in-cell simulations. The size of the central dissipation region is controlled by the electron-ion mass ratio, suggesting that electron physics is essential. A narrow electron jet extends along the outflow direction until it reaches an electron shock. The jet region appears to be anti-dissipative. At the shock, electron heating is relevant to a magnetic cavity signature. The results are summarized to a unified picture of the single dissipation region in a Hall magnetic geometry.
In-Situ Measurement of Hall Thruster Erosion Using a Fiber Optic Regression Probe
One potential life-limiting mechanism in a Hall thruster is the erosion of the ceramic material comprising the discharge channel. This is especially true for missions that require long thrusting periods and can be problematic for lifetime qualification, especially when attempting to qualify a thruster by analysis rather than a test lasting the full duration of the mission. In addition to lifetime, several analytical and numerical models include electrode erosion as a mechanism contributing to enhanced transport properties. However, there is still a great deal of dispute over the importance of erosion to transport in Hall thrusters. The capability to perform an in-situ measurement of discharge channel erosion is useful in addressing both the lifetime and transport concerns. An in-situ measurement would allow for real-time data regarding the erosion rates at different operating points, providing a quick method for empirically anchoring any analysis geared towards lifetime qualification. Erosion rate data over a thruster's operating envelope would also be useful in the modeling of the detailed physics inside the discharge chamber. A recent fundamental sensor development effort has led to a novel regression, erosion, and ablation sensor technology (REAST). The REAST sensor allows for measurement of real-time surface erosion rates at a discrete surface location. The sensor was tested using a linear Hall thruster geometry, which served as a means of producing plasma erosion of a ceramic discharge chamber. The mass flow rate, discharge voltage, and applied magnetic field strength could be varied, allowing for erosion measurements over a broad thruster operating envelope. Results are presented demonstrating the ability of the REAST sensor to capture not only the insulator erosion rates but also changes in these rates as a function of the discharge parameters.
In-Situ Measurement of Hall Thruster Erosion Using a Fiber Optic Regression Probe
One potential life-limiting mechanism in a Hall thruster is the erosion of the ceramic material comprising the discharge channel. This is especially true for missions that require long thrusting periods and can be problematic for lifetime qualification, especially when attempting to qualify a thruster by analysis rather than a test lasting the full duration of the mission. In addition to lifetime, several analytical and numerical models include electrode erosion as a mechanism contributing to enhanced transport properties. However, there is still a great deal of dispute over the importance of erosion to transport in Hall thrusters. The capability to perform an in-situ measurement of discharge channel erosion is useful in addressing both the lifetime and transport concerns. An in-situ measurement would allow for real-time data regarding the erosion rates at different operating points, providing a quick method for empirically anchoring any analysis geared towards lifetime qualification. Erosion rate data over a thruster s operating envelope would also be useful in the modeling of the detailed physics inside the discharge chamber. There are many different sensors and techniques that have been employed to quantify discharge channel erosion in Hall thrusters. Snapshots of the wear pattern can be obtained at regular shutdown intervals using laser profilometry. Many non-intrusive techniques of varying complexity and sensitivity have been employed to detect the time-varying presence of erosion products in the thruster plume. These include the use quartz crystal microbalances, emission spectroscopy, laser induced flourescence, and cavity ring-down spectroscopy. While these techniques can provide a very accurate picture of the level of eroded material in the thruster plume, it is more difficult to use them to determine the location from which the material was eroded. Furthermore, none of the methods cited provide a true in-situ measure of erosion at the channel surface while the thruster is in operation (i.e. none yield a continuous channel erosion measurement). A recent fundamental sensor development effort has led to a novel regression, erosion, and ablation sensor technology (REAST). The REAST sensor allows for measurement of real-time surface erosion rates at a discrete surface location. The sensor was tested using a linear Hall thruster geometry (see Fig. 1), which served as a means of producing plasma erosion of a ceramic discharge chamber. The mass flow rate, discharge voltage, and applied magnetic field strength could be varied, allowing for erosion measurements over a broad thruster operating envelope. Results are presented demonstrating the ability of the REAST sensor to capture not only the insulator erosion rates but also changes in these rates as a function of the discharge parameters.
Automated data collection system applied to Hall effect and resistivity measurements
Automated Hall effect and resistivity apparatus for studying electrical transport properties of semiconductors
Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze
In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.
Deep Exclusive p 0 Electroproduction Measured in Hall A at Jefferson Lab with the Upgraded CEBAF
Our understanding of the proton's structure in terms of its fundamental degrees of freedom, quarks and gluons, is incomplete. Generalized Parton Distributions (GPDs) can enhance our understanding of the partonic structure of the proton as it includes the correlation between the momentum and transverse position of partons. Exclusive electroproduction of the pion (ep→e'p'π 0 ) is one of the potential channels to access the GPDs. GPDs are defined at the Bjorken limit where the total amplitude can be factorized in a hard scattering of the photon off the quark and a soft part described by the GPDs. At sufficiently high Q 2 , a factorization scheme for exclusive meson production processes exists but only for longitudinally polarized virtual photons. As long as the longitudinally polarized virtual photons dominate the cross-section, we can have factorization and extract the GPDs. But the existing data for π 0 production at low Q 2 and low x B show the dominance of transverse part of the cross-section over the longitudinal one. Some transversity GPD models have found that an effective way to factorize the contribution from transversely polarized virtual photons to explain the dominance of σ T over σ L , shown by existing data. The experiment E12-06-114 ran in experimental Hall A during 2014-2016. The primary goal of this experiment was to measure the DVCS cross-section but the experimental configuration also allows the measurement of deep exclusive π 0 production. Taking advantage of the upgraded CEBAF at Jefferson Lab, we explored the high Bjorken-x (0.60) and high Q 2 regime for the first time. The extracted cross-section terms for π 0 production helps us to test the validity of QCD factorization in our kinematic regime. Our π 0 production results can be used to test and improve the existing models of proton structure. Cross-section results will be presented at two different Q 2 values for fixed x B of 0.60.
An energy distribution and charge state analyzer for Hall thruster measurements
An energy analyzer has been constructed that is appropriate for measuring the energy profile and charge state distribution of the exhaust plume of a xenon-driven Hall thruster.
Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide
Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.