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Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.
We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.
We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.
A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired confidence level (CL) without failure data. The extension provides an avenue for analyzing microelectronics tested for TID without reaching a failure mode, a scenario often encountered by missions utilizing commercial-off-the-shelf (COTS) technologies. Using the type-I censored likelihood formulation and a realistic upper bound on expected device performance, the failure probability space is bounded by confidence contours within the context of a variable environment. The framework accommodates any type of distribution assumed for the part failure or the environment under consideration. Furthermore, the framework can be utilized pre-emptively to plan future device TID tests, minimizing costs while meeting survival requirements. Heritage data may also be used as survivors to further minimize testing costs when parts are from the same lot, but the amount of constraint derived from heritage is limited. Altogether, the framework enables a formal, mathematically rigorous analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.
Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.
The space radiation environment can lead to extremely harsh operating conditions for spacecraft electronic systems. A hardness assurance methodology must be followed to assure that the space radiation environment does not compromise the functionality and performance of space-based systems during the mission lifetime. The methodology includes a definition of the radiation environment, assessment of the radiation sensitivity of parts, worst-case analysis of the impact of radiation effects, and part acceptance decisions which are likely to include mitigation measures.
Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.
Radiation hardened linear devices are characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased conditions is compared and the impact to hardness assurance methodology is discussed.
The space radiation environment can lead to extremely harsh operating conditions for spacecraft electronic systems. A hardness assurance methodology must be followed to assure that the space radiation environment does not compromise the functionality and performance of space-based systems during the mission lifetime. The methodology includes a definition of the radiation environment, assessment of the radiation sensitivity of parts, worst-case analysis of the impact of radiation effects, and part acceptance decisions which are likely to include mitigation measures.
Total dose tests of six different low dropout voltage regulators show sensitivity to both dose rate and bias during exposure. All devices tested exhibited Enhanced Low Dose Rate Sensitivity (ELDRS) and performed worse for the unbiased irradiation condition. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.
In the 47 years since single-event effects were first observed in spacecraft electronics, radiation experts have developed an effective methodology supported by a nationwide infrastructure. A highly skilled workforce of radiation engineers has developed test facilities and methods, modeling and simulation techniques, and mitigation and design strategies to ensure space missions meet their performance and reliability requirements even in the harsh radiation environments of space. Now, increasing performance demands of space missions, the continued disruptive evolution of microcircuit technologies and growth and changes of the space industry have combined with an aging infrastructure are placing increasing strain on the radiation effects community, and the community is responding.
Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.
Radiation Hardness Assurance (RHA) methodologies against Total Ionizing Dose (TID) degradation impose rigorous statistical treatments for data from a part's Radiation Lot Acceptance Test (RLAT) and/or its historical performance. However, no similar methods exist for using "similarity" data - that is, data for similar parts fabricated in the same process as the part under qualification. This is despite the greater difficulty and potential risk in interpreting of similarity data. In this work, we develop methods to disentangle part-to-part, lot-to-lot and part-type-to-part-type variation. The methods we develop apply not just for qualification decisions, but also for quality control and detection of process changes and other "out-of-family" behavior. We begin by discussing the data used in ·the study and the challenges of developing a statistic providing a meaningful measure of degradation across multiple part types, each with its own performance specifications. We then develop analysis techniques and apply them to the different data sets.
Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.
Functional models are used to identify possible faults and system-level fault consequences. A risk factor is calculated to evaluate mitigation. The risk factor from different radiation-induced faults is compared with system telemetry from on-orbit data.
SEAM is a useful resource for model-based radiation hardness assurance but can be technically challenging for new users. R-Gentic is a NASA developed website that aims at assisting engineers better understand the radiation concerns in their EEE parts. This work aims at providing an update on an ongoing effort to interface R-Gentic with SEAM. Once integration is completed, R-Gentic can be used to seed new SEAM projects, making project creation easier and more accessible.
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Presents a methodology for modeling radiation hardness assurance activities into MBSE throughout the NASA project life cycle. Also includes information about quantitatively and qualitatively modeling radiation-induced failures with system models.