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We propose a wearable thermoelectric cooler and heatsink based of silicone elastomer, phase-change material, and graphite powder, which can achieve a cooling temperature of ∼5 K at 0.5 W input power for more than 5 h under ambient conditions.
A method of producing a complex product includes designing a three dimensional preform of the complex product, creating a three dimensional preform of the complex product using the model, depositing a material on the preform, and removing the preform to complete the complex product. In one embodiment the system provides a complex heat sink that can be used in heat dissipation in power electronics, light emitting diodes, and microchips.
Review of design features and how fabrication will be completed for DRIFT Capsules, Big-BUSTER, and Moderator Assemblies for Big-BUSTER in TREAT.
Driven initially by the desire for X-ray microcalorimeter arrays suitable for imaging the dynamic solar corona, we have developed a transition-edge-sensor (TES) microcalorimeter optimization that exhibits a unique combination of high spectral resolving power and a wide X-ray bandpass. These devices have achieved spectral performance of dE approximately 1.3 eV FWHM at 1.5 keV, 1.6 eV at 6 keV, and 2.0 eV at 8 keV, using small TESs (e.g., approximately 35 micron x 35 micron) that operate in a regime in which the superconducting transition is highly current dependent. In order to accommodate high X-ray count rates, the devices sit directly on a solid substrate instead of on membranes, and we use an embedded heatsinking layer to reduce pixel-to-pixel crosstalk. We will present results from devices with a range of TES and absorber sizes, and from device wafers with varied embedded heatsink materials. This contribution will focus on count-rate capabilities, including a discussion of the trade-off between count rate and energy resolution, and the heatsinking design. We will also present preliminary tests of array readout using a code-division multiplexed SQUID readout scheme, which may be necessary to enable large arrays of these fast devices.
We have produced a variety of superconducting transition edge sensor array designs for microcalorimetric detection of x-rays. Designs include kilopixel scale arrays of relatively small sensors (~75 micron pitch) atop a thick metal heatsinking layer as well as arrays of membrane-isolated devices on 250 micron pitch and smaller arrays of devices up to 600 micron pitch. We discuss the fabrication techniques used for each type of array focusing on unique aspects where processes vary to achieve the particular designs and required device parameters. For example, we evaluate various material combinations in the production of the thick metal heatsinking, including superconducting and normal metal adhesion layers. We also evaluate the impact of added heatsinking on the membrane isolated devices as it relates to basic device parameters. Arrays can be characterized with a time division SQUID multiplexer such that greater than 10 devices from an array can be measured in the same cooldown. Device parameters can be measured simultaneously so that environmental events such as thermal drifts or changes in magnetic fields can be controlled. For some designs, we will evaluate the uniformity of parameters impacting the intrinsic performance of the microcalorimeters under bias in these arrays and assess the level of thermal crosstalk.
The status and results to date of the NASA-Lewis/USAF Astronautics study of technology for large spacecraft heat-dissipation by means of liquid-droplet radiation (LDR) are discussed. The LDR concept uses a droplet generator to create billions of 200-micron droplets of a heatsink fluid which will cool through radiation into deep space as they fly toward a dropet collector. This exposure to the space environment entails the maintenance of vapor pressure as low as 10 to the -7th torr; the fluid must also be very stable chemically. While certain oils are good fluids for LDR use at low temperatures, higher-temperature heatsink fluids include Li, Sn, and Ga liquid metals.
A comprehensive characterization program is underway at JPL to generate test data on long-life, miniature Stirling-cycle cryocoolers for space application. The key focus of this paper is on the thermal performance of the British Aerospace (BAe) 80 K split-Stirling-cycle cryocooler as measured in a unique calorimetric thermal-vacuum test chamber that accurately simulates the heat-transfer interfaces of space. Two separate cooling fluid loops provide precise individual control of the compressor and displacer heatsink temperatures. In addition, heatflow transducers enable calorimetric measurements of the heat rejected separately by the compressor and displacer. Cooler thermal performance has been mapped for coldtip temperatures ranging from below 45 K to above 150 K, for heatsink temperatures ranging from 280 K to 320 K, and for a wide variety of operational variables including compressor-displacer phase, compressor-displacer stroke, drive frequency, and piston-displacer dc offset.
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
We develop superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting the specifications of X-ray imaging spectrometers, including high count rate, high energy resolution, and large field of view. In particular, a focal plane composed of two subarrays: one of fine pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit Instrument on the European Space Agencys ATHENA mission. We have based the subarrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all-gold X-ray absorber on 50 and 75 micron pitch, where the Mo/Au TES sits atop a thick metal heatsinking layer, have shown high resolution and can accommodate high count rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au, and an added bismuth layer in a 250-sq micron absorber. To tune the parameters of each subarray requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single-ion milling step. We demonstrate methods for integrating the heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each subarray, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (T(sub c)) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these 'hybrid' arrays will be presented.
Opportunities to improve thermal management in electronic devices are currently hindered by processing constraints that limit thermal conductivity in polymer-matrix composites. Active patterning of filler particles is a promising route to improve conductivity while retaining processability by improving particle contact density and directing heat along optimized pathways. Here, we employ acoustic patterning to align and compact filler particles into stripes during stereolithographic 3D printing. This approach produces polymer-based composite materials with highly efficient embedded heat transport pathways which reach 95 vol% particle utilization (relative to the parallel conduction upper limit). These composites exhibit anisotropic thermal conductivity up to 300% higher than unpatterned composites, with in-plane anisotropy ratios of up to 350%. Combining this high conductivity with 3D printing enables materials with engineered heat networks that optimize transport from hot spots to heatsinks while maintaining low viscosity for fast particle patterning and for infiltration around electronic components. Finally, numerical simulations of acoustic assembly of particles with varied geometry, when compared to experimentally characterized particle packing, illuminate pathways for further improving conductivity by optimizing particle geometry for alignment and stacking of particles with maximum contact surface area.
Purpose AlSi10Mg alloy is commonly used in laser powder bed fusion due to its printability, relatively high thermal conductivity, low density and good mechanical properties. However, the thermal conductivity of as-built materials as a function of processing (energy density, laser power, laser scanning speed, support structure) and build orientation, are not well explored in the literature. This study aims to elucidate the relationship between processing, microstructure, and thermal conductivity. Design/methodology/approach The thermal conductivity of laser powder bed fusion (L-PBF) AlSi10Mg samples are investigated by the flash diffusivity and frequency domain thermoreflectance (FDTR) techniques. Thermal conductivities are linked to the microstructure of L-PBF AlSi10Mg, which changes with processing conditions. The through-plane exceeded the in-plane thermal conductivity for all energy densities. A co-located thermal conductivity map by frequency domain thermoreflectance (FDTR) and crystallographic grain orientation map by electron backscattered diffraction (EBSD) was used to investigate the effect of microstructure on thermal conductivity. Findings The highest through-plane thermal conductivity (136 ± 2 W/m-K) was achieved at 59 J/mm 3 and exceeded the values reported previously. The in-plane thermal conductivity peaked at 117 ± 2 W/m-K at 50 J/mm 3 . The trend of thermal conductivity reducing with energy density at similar porosity was primarily due to the reduced grain size producing more Al-Si interfaces that pose thermal resistance. At these interfaces, thermal energy must convert from electrons in the aluminum to phonons in the silicon. The co-located thermal conductivity and crystallographic grain orientation maps confirmed that larger colonies of columnar grains have higher thermal conductivity compared to smaller columnar grains. Practical implications The thermal properties of AlSi10Mg are crucial to heat transfer applications including additively manufactured heatsinks, cold plates, vapor chambers, heat pipes, enclosures and heat exchangers. Additionally, thermal-based nondestructive testing methods require these properties for applications such as defect detection and simulation of L-PBF processes. Industrial standards for L-PBF processes and components can use the data for thermal applications. Originality/value To the best of the authors’ knowledge, this paper is the first to make coupled thermal conductivity maps that were matched to microstructure for L-PBF AlSi10Mg aluminum alloy. This was achieved by a unique in-house thermal conductivity mapping setup and relating the data to local SEM EBSD maps. This provides the first conclusive proof that larger grain sizes can achieve higher thermal conductivity for this processing method and material system. This study also shows that control of the solidification can result in higher thermal conductivity. It was also the first to find that the build substrate (with or without support) has a large effect on thermal conductivity.
The demand for high performing, lightweight, reliable inverters, increased the scope of wide bandgap and high-switching frequency based solutions. To achieve such high efficiency inverters, it is vital to focus on the system level design considerations to maximize the benefits of these advanced technologies. This paper presents an improved design based on considerations to further reap the benefits of choosing the right inverter topology; increased capabilities through paralleling devices, with reduced total number of switches; and designing a planarized inverter with PCB based busbar. Appropriate thermal analysis and heatsink design has aided in increased system power density along with the overall efficiency. Demonstration of a 50kW 3-phase 3-level paralleled T-type SiC inverter operating at 40kHz switching frequency for aircraft applications is shown to evaluate the benefits of proposed design methodology. Here, the prototype achieves a high power density of 11kW/L.
In a power module the parasitic inductance limits the dynamic high-frequency performance, and the area of the cooling surfaces limits the power capability. This paper presents a new 3D power electronic design methodology based on the concept of mutual inductance cancellation and multi-sided heat transfer. New 3D prismatic packaging concepts are proposed for Wide Band Gap (WBG) power devices, where the devices can be mounted at acute angles to adjacent interconnects or other devices. Discussion is given on electrical and thermal path optimization in a 3D space. To validate the 3D prismatic packaging methodology, a 1200V/50A SiC half-bridge power module is fabricated and tested for electrical and thermal performance and results are compared with simulations. The power density calculated for the module is 12 kW/in3 (including heatsink) and shows a 31.3% inductance reduction compared to a 2D planar module. Finally, design guidance suggested for utilizing prismatic structures is provided, together with suggested future work in the area. This paper presents the first reported true 3D power module.
This project developed the key technology for a scalable, high-density photovoltaic (PV) inverter, based on gallium-nitride (GaN) power semiconductors, and advanced digital control. Specifically, we explored the feasibility of a flying-capacitor multi-level inverter for 1.5 kV PV installations, through the development of hardware prototypes utilizing low-inductance commutation loop designs, robust digital control and signaling, and low-cost heatsink integration.
Constricted double-heterojunction diode lasers have been life tested at 70 C heatsink temperature and 3-4 mW/facet in CW operation. A median life of 7800 h is obtained at 70 C, which extrapolates to 400,000 h median life at room temperature. The extrapolated mean time to failure at room temperature is in excess of 1,000,000 h. Single-longitudinal-mode CW operation is maintained after 10,000 h of accelerated aging at 70 C.
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.
An end-to-end microwave receiver system contained in a single miniature hybrid package mounted on a single heatsink is presented. It includes an input end connected to a microwave receiver antenna and an output end which produces a digital count proportional to the amplitude of a signal of a selected microwave frequency band received at the antenna and corresponding to one of the water vapor absorption lines near frequencies of 20 GHz or 30 GHz. The hybrid package is on the order of several centimeters in length and a few centimeters in height and width. The package includes an L-shaped carrier having a base surface, a vertical wall extending up from the base surface and forming a corner therewith, and connection pins extending through the vertical wall. Modular blocks rest on the base surface against the vertical wall and support microwave monolithic integrated circuits on top surfaces thereof connected to the external connection pins. The modular blocks lie end-to-end on the base surface so as to be modularly removable by sliding along the base surface beneath the external connection pins away from the vertical wall.
Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.