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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced direct current conductance. Our findings are explained based on the established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes the possibility to tune their electronic response based on oxidation conditions, opening the door for domain-wall-based sensor technology.

Schultheiß, J. (ORCID:0000000173891295)↗
DOE OSTI2021

Visualization of large-scale charged domain Walls in hexagonal manganites

A ferroelectric charged domain wall (CDW) carries bound charges, originating from the variation of the normal components of polarization across the domain boundary, leading to a possible two-dimensional conductive interface in insulating materials. The ferroelectric CDW can be precisely created, erased, and manipulated, therefore offering an intriguing pathway toward the design of nano-devices. However, due to rather large energy costs, the size of the CDW is usually on the nanoscale. Here, taking flux-grown ferroelectric hexagonal manganites (h-RMnO 3 ) as an example, we creatively adopted an accessible inclined polishing process to reveal the domain evolution of stripe, loop, and vortex domain patterns by depth profiling. Interestingly, we observed an unexpected large-scale straight CDW in as-grown LuMnO 3 with length up to a millimeter size, which may result from the “polar catastrophe” during the flux growth. The large-scale CDW has a residual influence on the formation of the loop domain when the crystal anneals below the ferroelectric transition temperature, but completely disappears as the topological vortices emerge. The observed large-scale CDWs make h-RMnO 3 a potential candidate for advanced electronic devices, leading to a panoply of desired properties.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO 3 . Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The response of sub-surface domains is studied by FIB cross-sectioning, enabling imaging in the direction perpendicular to the applied electric field. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites is increased locally by orders of magnitude. Here, local acceptor and donor doping in Er(Mn,Ti)O3 is demonstrated, facilitated by the controlled splitting of anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, it is shown that the oxygen defects can readily be moved through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. These findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

He, Jiali↗
DOE OSTI2025

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO 3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.

Zahn, Manuel [Norwegian Univ. of Science and Techn↗
DOE OSTI2021

Bulk photovoltaic effect in hexagonal LuMnO 3 single crystals

Hexagonal manganites, such as h-LuMnO 3 , are ferroelectric and have a narrow electronic band gap of ≈1.5eV. Here we report on the photoresponse of h-LuMnO 3 single crystals. It is found that the short circuit photocurrent density (J sc ) and the open circuit voltage (V oc ) are dependent on the direction of the polarization plane of a linearly polarized impinging light. Its angular dependence indicates the contribution of bulk photovoltaic effect to the short circuit photocurrent (J BPE ). It is also observed that a switchable drift photocurrent, originating from the depoling field of the ferroelectric and thus tunable(<10%) by its polarization direction, also contributes to J sc . Although its presence precludes accurate determination of the bulk photovoltaic tensor elements and Glass coefficients, some bounds can be established. The Glass coefficients are found to be significantly larger than those obtained in BiFeO 3 . We argue that the smaller band gap of h-LuMnO 3 , its distinctive bipyramidal crystal field, and electronic configuration (3d 4 vs 3d 5 ), account for the difference and suggest a path towards ferroelectrics of higher photoconversion efficiency.

14 SOLAR ENERGY↗
DOE OSTI2026

Persistent structural distortion for anticipated improper ferroelectricity in ultrathin h-Lu 1− x Ca x MnO 3 films

Improper ferroelectricity in hexagonal rare-earth manganites (h-RMnO 3 , R = Ho–Lu, Y, Sc) arises from a geometric distortion as the primary order parameter, resilient to depolarizing fields and promising for ultrathin ferroelectric devices. However, the substrate-induced interface clamping effect, which suppresses the geometric distortion in the sub-nanometer regime, has thus far hindered the realization of two-dimensional improper ferroelectrics. This study demonstrates that doping with calcium can enhance ferroelectric structural distortion in h-LuMnO 3 thin films. Compressively strained h-Lu 1−x Ca x MnO 3 (x = 0.1, 0.2, 0.3, 0.4, 0.5) epitaxial thin films were stabilized on sapphire substrates using an h-ScFeO 3 buffer layer. We have found that the interface clamping effect is entirely overcome when the doping concentration reaches x ⩾ 0.2, establishing a potential quasi-2D ferroelectric system with a remarkably high estimated structural transition temperature of larger than 1200 K inferred indirectly from temperature-resolved reflection high-energy electron diffraction. This finding suggests a general strain engineering strategy to enhance improper ferroelectricity in hexagonal manganites.

hexagonal manganites↗
DOE OSTI2022

Magnetoelastic properties of multiferroic hexagonal ErMnO 3

Here, the strength and dynamics of magnetoelastic coupling through the paramagnetic (PM) – antiferromagnetic (AFM) – ferrimagnetic (FIM) transitions in multiferroic hexagonal ErMnO 3 have been investigated by Resonant Ultrasound Spectroscopy. Elastic stiffening by up to 2% below the PM – AFM transition at 80 K arises from biquadratic coupling between strain and the magnetic order parameter with relaxation times longer than ~10 -6 s for the response of spins to changes in strain. In contrast with YMnO 3 , the PM – AFM transition in ErMnO 3 is accompanied by a peak in acoustic loss immediately below the Néel point which is interpreted in terms of strain relaxation accompanying ordering of spins of Er 3+ at 4b sites. Changes in the magnetic ordering scheme at the AFM – FIM transition near 3 K are accompanied by elastic softening of ~0.03 %. During poling of the low temperature ferrimagnetic structure round magnetic hysteresis loops, small changes in elastic stiffness which arise due to the contribution of piezomagnetic and/or piezoelectric moduli are detected. Contributions of piezoelectric moduli to acoustic resonance frequencies also permit changes in the configuration of ferroelectric domains to be detected in response both to cycling through this transition and to application of a magnetic field. A peak in acoustic loss in the vicinity of 250 K is attributed to strain-mediated pinning/freezing of some aspect of the domain microstructure with an activation energy of ~0.25–0.3 eV. A return to the original elastic properties on heating to temperatures above ~250 K is interpreted in terms of backswitching of domains to the configuration they had at the start. These observations confirm the existence of subtle variations in magnetoelastic coupling behaviour relating to both the magnetic order parameters and magnetic domain structures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h -(Lu,Sc)FeO 3

Herein we employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal ( h ) Lu 0.6 Sc 0.4 FeO 3 , and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h -Lu 0.6 Sc 0.4 FeO 3 are broad and semiconducting, a finding that we attribute to the presence of an A -site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗