Search NASA⌕ Search

SEARCH · Search NASA

Results for “High Power Mode”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Connolly, J. C.↗
NASA NTRS1986

A 20 GHz, high efficiency dual mode TWT for the ACTS program

The development of a 50 W/10 W dual mode K-band downlink TWT is examined, and its performance is evaluated. The designs of the electron gun, RF circuit, and collector for the TWT, which is enclosed in a capsule, are described. It is observed that the high power mode (HPM) power output is at 50 GHz and the low power mode (LPM) output is at 12 GHz; the saturated gain is 52.5 dB for HPM and 3 dB for LPM; the AM-PM is 4.2 dB; the HPM dc power output is 104 W; and the LPM dc output is 42 W; and the efficiency is 45 percent for the HPM and 28.6 percent for the LPM.

Muennemann, Frank↗
NASA NTRS1984

Radio frequency fields generated by the S-band communication link on OV102

The Space Shuttle STS-3 mission carried a Plasma Diagnostics Package (PDP) whose instrumentation included an S-band antenna and detector. The PDP was maneuvered by the Remote Manipulator System arm through a computer controlled sequence in the Orbiter's X-Z plane, above the quad and hemi S-band communications antennas. Antenna field strength measurements were conducted during transmitter high power modes, and the results were compared to ground full scale measurements and predictions. A field strength 4.8 + or - 3 dB higher than predicted is noted. This RF field is primarily due to the quad PM transmitter, whose power output of 115 W compares with 15 W for the hemi.

Murphy, G. B.↗
NASA NTRS2008

Assessments of Hollow Cathode Wear in the Xenon Ion Propulsion System (XIPs(c)) by Numerical Analyses and Wear Tests

The standard approach presently followed by NASA to qualify electric propulsion for the required mission throughput has been based largely on life tests, which can be costly and time consuming. Revised electric propulsion lifequalification approaches are being formulated that combine analytical and/or computational methods with (shorter-duration) wear tests. As a model case, a wear test is being performed at JPL to assess the lifetime of the discharge hollow cathode in the Xenon Ion Propulsion System (XIPS(c)), a 25-cm ion engine developed by L-3 Communications Electron Technologies, Inc. for commercial applications. Wear and plasma data accumulated throughout this life-assessment program are being used to validate the existing 2-D hollow cathode code OrCa2D. We find that the OrCa2D steady-state solution predicts very well the time-averaged plasma data and the keeper voltage after 5500 hrs of operation in high-power mode. When the wave motion that occurs naturally in these devices is accounted for, based on an estimate of the maximum wave amplitude, the molybdenum-keeper erosion profile observed in the XIPS(c) discharge cathode is also reproduced within a factor of two of the observation. When the same model is applied to predict the erosion of a tantalum keeper we find that erosion is reduced by more than two orders of magnitude compared to the molybdenum keeper due the significantly lower sputtering yield of tantalum. A tantalum keeper would therefore allow keeper lifetimes that greatly exceed the present requirements for deep-space robotic missions considered by NASA. Moreover, such large reduction of the erosion renders the largest uncertainties in the models, which are associated with the wave amplitude estimates and the electron transport model, negligible.

plasma simulations↗
NASA NTRS2006

Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

Amzajerdian, Farzin↗
NASA NTRS2013

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗
NASA NTRS1981

Multistage depressed collector for dual mode operation

A depressed collector which captures the spent electrons of a microwave transmitting tube at high efficiency in both high and low power modes of operation is described. The collector comprises entrance and end electrodes, the end electrode having a spike extending toward entrance electrode. Intermediate electrodes and the entrance electrode each have a central aperture and, together, these electrodes capture most high power mode spent electrons. The apertures of the electrodes increase in size in a downstream direction. To capture low power mode spent electrons a low power mode electrode is positioned between the last intermediate electrode and the end electrode. This electrode has a central aperture preferably smaller but no larger than that of the last intermediate electrode. An auxiliary low power mode electrode may be added having a central aperture larger than that of the low power mode electrode. All of the electrodes are at voltages provided by a voltage divider connected between a potential.

Kosmahl, H. C.↗
NASA NTRS1994

Unstable-Resonator Oscillator/Amplifier Diode Laser

Fabricated as single-chip integrated circuit. Device based partly on concept proved in commercial solid-state lasers: using unstable-resonator oscillator to define electromagnetic mode and, following oscillator, traveling-wave amplifier to generate high power. Mode-definition and power-amplification functions optimized separately. Hyperbolic-grating, unstable-resonator oscillator/amplifier diode laser produces single-longitudinal-mode, broad, laterally coherent, diffraction-limited, high-power beam.

Lang, Robert J.↗
NASA NTRS1982

Terraced-heterostructure large-optical-cavity AlGaAs diode laser - A new type of high-power CW single-mode device

A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels' direction. Single spatial and longitudinal mode CW operation is achieved to 50 mW from one facet, in large spot sizes (2 x 7.5 micron, 1/e squared points in intensity) and narrow beams (6 deg x 23 deg), full width half-power). At 70 C ambient temperature CW lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguides provides discrimination against high-order mode oscillation.

Botez, D.↗
NASA NTRS1986

Single longitudinal mode operation of semiconductor laser arrays with etalon control

A simple method is devised to obtain a single longitudinal output beam from high-power multilongitudinal mode diode laser arrays. Mode control is achieved by simply placing a thin etalon in front of the laser. The three-cavity laser formed by addition of the etalon favors a single longitudinal mode. This technique is applicable to both continuous wave and pulsed laser modes of operation. Experimental results demonstrating the technique along with future work and possible applications are discussed.

Hemmati, H.↗
NASA NTRS1994

Master-Oscillator/Power-Amplifier Laser System

Master-oscillator/power-amplifier (MOPA) laser system operates in continuous-wave mode or in amplitude-modulation (e.g., pulse) mode by modulation of oscillator current. Power amplifier is laser-diode-pumped neodymium:yttrium lithium fluoride (Nd:YLF) laser; oscillator is laser diode. Offers relatively high efficiency and power. Because drive current to oscillator modulated, external electro-optical modulator not needed. Potential uses include free-space optical communications, coded laser ranging, and generation of high-power, mode-locked pulses.

Yu, Anthony W.↗
NASA NTRS2003

Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

single mode↗
NASA NTRS1988

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

Connolly, J. C.↗
NASA NTRS1988

Diode laser harmonic spectroscopy applied to in situ measurements of atmospheric trace molecules

With the emergence of lead-salt diode laser technology, a broad and important IR spectral region, roughly 3-30 microns, became accessible to tunable laser spectroscopy. More recent advances in fabrication techniques have provided experimenters with relatively high power quasi-single-mode high-temperature lasers that are readily adapted to compact automated instruments for field experiments. An especially attractive capability of diode lasers is the ease of using them for simultaneous multiconstituent sampling in the atmosphere. This paper presents a summary description of field instruments for atmospheric research which employ diode lasers and second-harmonic detection. Representative results obtained with some of these instruments are presented.

Loewenstein, Max↗
NASA NTRS1985

Conducting a wind sensing study

Signal-to-noise requirements, and how signal-to-noise determines wind velocity measurement accuracy were studied. A Nd:YAG-based system was found to be competitive with a CO2-based system. Hardware was developed for a coherent Nd:YAG LIDAR system, and is being integrated into a functioning system. A diode-pumped monolithic rod laser to be used as a reference oscillator, a high-power, single-mode ring laser, for use as a master oscillator, and a high-gain, multipass amplifier were constructed.

Byer, R. L.↗
NASA NTRS1985

High-power diode lasers for optical communications applications

High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

Carlin, D. B.↗
NASA NTRS2013

High-Power, High-Speed Electro-Optic Pockels Cell Modulator

Electro-optic modulators rely on a change in the index of refraction for the optical wave as a function of an applied voltage. The corresponding change in index acts to delay the wavefront in the waveguide. The goal of this work was to develop a high-speed, high-power waveguide- based modulator (phase and amplitude) and investigate its use as a pulse slicer. The key innovation in this effort is the use of potassium titanyl phosphate (KTP) waveguides, making the highpower, polarization-based waveguide amplitude modulator possible. Furthermore, because it is fabricated in KTP, the waveguide component will withstand high optical power and have a significantly higher RF modulation figure of merit (FOM) relative to lithium niobate. KTP waveguides support high-power TE and TM modes - a necessary requirement for polarization-based modulation as with a Pockels cell. High-power fiber laser development has greatly outpaced fiber-based modulators in terms of its maturity and specifications. The demand for high-performance nonlinear optical (NLO) devices in terms of power handling, efficiency, bandwidth, and useful wavelength range has driven the development of bulk NLO options, which are limited in their bandwidth, as well as waveguide based LN modulators, which are limited by their low optical damage threshold. Today, commercially available lithium niobate (LN) modulators are used for laser formatting; however, because of photorefractive damage that can reduce transmission and increase requirements on bias control, LN modulators cannot be used with powers over several mW, dependent on wavelength. The high-power, high-speed modulators proposed for development under this effort will enable advancements in several exciting fields including lidarbased remote sensing, atomic interferometry, free-space laser communications, and others.

Hawthorne, Justin↗
NASA NTRS1987

Single longitudinal mode operation of semiconductor laser arrays with etalon feedback

The multiple longitudinal mode output of high-power diode-laser arrays is converted into single mode with 97 percent efficiency by optical feedback from a thin (less than 200-micron thick) etalon external to the laser. The coupled cavities formed by addition of the etalon favor a single longitudinal mode. Single-mode operation is retained at 0.1 MHz pulsed rates. Both the near-field and the far-field patterns of the laser array remain nearly unchanged while the array operates in a single longitudinal mode.

Hemmati, H.↗