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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High operating temperature heat transfer fluids for solar thermal power generation. Final report

This is the final technical report for the DOE MURI project on developing high-operating temperature heat transfer fluids for solar thermal power generation. This project aimed to evaluate liquid metals as a heat-transport fluid and potential energy storage medium for concentrated solar powered (CSP) systems. The project consisted of five phases, starting with fluid selection and screen and ending with potential CSP integration. The initial fluid selection arrived at heavy liquid metals as candidate fluids such as lead bismuth eutectic (LBE) as the prime liquid-alloy candidate to be studied, given the conditions above. Fifty-seven liquid compositions were initially identified with liquidus temperatures lower than 200°C, composed of elements that provide no driving force to the reduction of Cr 2 O 3 or Al 2 O 3 passivation layers in pipe material which is required for corrosion prevention. LBE was identified as the primary candidate fluid after these compositions were compared against computational thermodynamic modeling to screen all of the selected systems that would be compatible with our design objectives. Twenty-eight of these compositions were also investigated with the rapid characterization methods; the accuracies of the liquidus temperature and the specific heats predicted by the computations were better than 3 percent and 9 percent, respectively. We conducted numerus corrosion tests of various Fe-Cr-Al based steels in LBE and its variants at temperate as high as 800°C. It was found that minor additions to the liquid did not provide sufficient corrosion protection to warrant their use in real applications. Furthermore, we investigated the detailed mechanism of corrosion between heavy liquid metal and the pipe material at these very high temperatures. A liquid metal loop was constructed to operate at these high temperatures. The loop construction and operation lead to valuable lessons learned that will be needed for industrial scale loops. Furthermore, we learned that electromagnetic pumps at these extreme temperatures will have to be reengineered and redesigned to be used for CSP applications.

14 SOLAR ENERGY↗
DOE OSTI2021

Multiscale Understanding of Surface Structural Effects on High-Temperature Operational Resiliency of Layered Oxide Cathodes

The worldwide energy demand in electric vehicles and the increasing global temperature have called for development of high-energy and long-life lithium-ion batteries (LIBs) with improved high temperature operational resiliency. However, current attention has been mostly focused on cycling aging at elevated temperature, leaving considerable gaps of knowledge in the failure mechanism and practical control of abusive calendar aging and thermal runaway that are highly related to the eventual operational lifetime and safety performance of LIBs. Herein, using a combination of various in situ synchrotron X-ray and electron microscopy techniques, we report a multiscale understanding of surface structure effects involved in regulating the high temperature operational tolerance of polycrystalline Ni-rich layered cathodes. Our results collectively show that an ultraconformal poly (3,4-ethylenedioxythiophene) coating can effectively prevent LiNi 0.8 Co 0.1 Mn 0.1 O 2 cathode from undesired phase transformation and transition metal dissolution on the surface, atomic displacement and dislocations within primary particles, intergranular cracking along the grain boundaries within secondary particles, and intensive bulk oxygen release during high state-of-charge and high temperature aging. As a result, the present work highlights the essential role of surface structure controls in overcoming the multiscale degradation pathways of high-energy battery materials at extreme temperature.

25 ENERGY STORAGE↗
DOE OSTI2017

High Temperature Operation of Al 0.45 Ga 0.55 N/Al 0.30 Ga 0.70 N High Electron Mobility Transistors

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al x Ga 1-x N HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on /I off current ratio, greater than 10 8 was demonstrated over the entire temperature range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Polymer large core optical splitter 1 × 2 Y for high-temperature operation

The design, fabrication and measurement of the properties of the large core 1 × 2 Y optical planar splitters for high-temperature operation are demonstrated. The splitters were designed by the beam propagation method optimized for operation wavelengths 650 nm and for assembling with optical fibre having core diameter 600 µm and cladding 630 µm. The splitters consisted of optical glue core and cladding layers made of Cyclo Olefin Polymer. The applied materials allowed for higher operating temperatures (up to 120 °C) than standard splitters made of acrylate plastic (up to 80 °C). The splitters show optical losses lower than 4.0 dB at 532 nm/650 nm, 2.6 dB at 850 nm, 3.4 dB at 1300 nm and 5.1 dB at 1550 nm at room temperature. The optical losses measured in the thermal shock test chamber at temperatures up to 120 °C showed that the best sample had losses lower than 4.2 dB at 850/1300 nm, 4.6 dB at 532 nm and 7.6 dB at 650 nm. Such splitters would be very useful in places with elevated temperatures, for instance in engine parts where the expected temperature can reach as high as 120 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Performance Evaluation of an Additively Manufactured ultra-High Operating Temperature SiC Solar-Thermal Air Receiver (HOTSSTAR) Test Module

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal and solar power systems. GE Aerospace Research in collaboration with Heliogen Inc and Sandia National Laboratories (SNL) is engaged in the development of ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. HOTSSTAR goal is to demonstrate SiC receiver with air exit temperatures up to 1100oC. We discuss fabrication and on-sun test results of a prototype 50kWth test module. The receiver architecture is based on a radial airflow design and consists of a series of radial SiC receiver sectors organized around central absorber. These components were fabricated using binder-jet printed SiC followed by melt-infiltration reaction bonding process. To enhance the thermo-mechanical reliability of SiC test articles in thermal gradient/ shock environment of the application, the components were laminated with GE’s MI SiC CMC. A dedicated test facility was constructed at SNL Solar Tower to evaluate the operational performance of HOTSSTAR module under solar fluxes >200 W/cm2. We report on our final 50kW test module fabrication, integration at the test facility at Sandia, and discuss on-sun test results. We compare the performance of HOTSSTAR module relative to our model predictions.

14 SOLAR ENERGY↗
DOE OSTI2022

Conformal PEDOT Coating Enables Ultra-High-Voltage and High-Temperature Operation for Single-Crystal Ni-Rich Cathodes

Single-crystal Ni-rich Li[Ni x Mn y Co 1-x-y ]O 2 (SC-NMC) cathodes represent a promising approach to mitigate the cracking issue of conventional polycrystalline cathodes. However, many reported SC-NMC cathodes still suffer from unsatisfactory cycling stability, particularly under high charge cutoff voltage and/or elevated temperature. Herein, we report an ultraconformal and durable poly(3,4-ethylenedioxythiophene) (PEDOT) coating for SC-NMC cathodes using an oxidative chemical vapor deposition (oCVD) technique, which significantly improves their high-voltage (4.6 V) and high-temperature operation resiliency. The PEDOT coated SC LiNi 0.83 Mn 0.1 Co 0.07 O 2 (SC-NMC83) delivers an impressive capacity retention rate of 96.7% and 89.5% after 100 and 200 cycles, respectively. Significantly, even after calendar aging at 45 degrees C and 4.6 V, the coated cathode can still retain 85.3% (in comparison with 59.6% for the bare one) of the initial capacity after 100 cycles at a 0.5 C rate. Synchrotron X-ray experiments and interface characterization collectively reveal that the conformal PEDOT coating not only effectively stabilizes the crystallographic structure and maintains the integrity of the particles but also significantly suppresses the electrolyte's corrosion, resulting in improved electrochemical/thermal stability. Our findings highlight the promise of an oCVD PEDOT coating for single-crystal Ni-rich cathodes to meet the grand challenge of high-energy batteries under extreme conditions.

25 ENERGY STORAGE↗
DOE OSTI2016

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10 Ga 0.90 As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15 Ga 0.85 As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.

42 ENGINEERING↗
DOE OSTI2023

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Improving Stability of Triple-Cation Perovskite Solar Cells under High-Temperature Operation

Metal halide perovskite photovoltaic performance required for commercial technology encompasses both efficiency and stability. Advances in both these parameters have recently been reported; however, these strategies are often difficult to directly compare due to differences in perovskite composition, device architecture, fabrication methods, and accelerated stressors applied in stability tests. In particular, it is found that there is a distinct lack of elevated temperature, operational (light and bias) stability data. Furthermore, significant testing is required to understand the interactions when combinations are used (e.g., additives used with posttreatments). Herein, individual and combined additive, posttreatment, and contact layer strategies from recent literature reports under standardized operational stability tests of p-i-n CsMAFA perovskites at 70 degrees C are evaluated. Through analysis of over 1000 devices, it is concluded that the hole-transport layer (HTL) is the most significant component impacting elevated temperature operational stability. This analysis motivates future development of high-performance HTLs.

14 SOLAR ENERGY↗
DOE OSTI2026

Ultra-High Operation Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing: Test Facility & Performance Evaluations

Solar Heat for Industrial Processes (SHIP) cavity receivers are capable of generating electricity or industrial process heat by absorbing thermal energy from solar radiation, focused on a small area. The concentration of solar radiation on the small area of the receiver enables the achievement of high temperatures (ranging from 400°C to 1,100°C) of a working fluid, thus making the SHIP technology thermodynamically comparable with conventional power plants. A volumetric receiver consists of a porous structure-generally made of silicon carbide or metal, which absorbs solar radiation and converts it into heat energy. Heat energy from the porous materials is then transferred to the fluid following through them. A volumetric receiver acts as a convective heat exchanger, transferring heat to the fluid through convection. Open-loop volumetric receivers work with air at atmospheric pressure and are suitable for single-cycle or multi-cycle energy plants. A Model Based Systems Engineering (MBSE) approach was used to develop a test bed at Sandia national Laboratories (SNL) capable of demonstrating an open-loop volumetric air receiver developed by General Electric Aerospace (GE Aerospace). This paper presents the development of the various MBSE methods, test bed, and testing operations for the GE air receiver, which was experimentally demonstrated to achieve 1,350°C for over 3 hours of operation and an approximate 70% receiver efficiency. By being able to achieve such high temperatures >1,000°C, this work provides the potential to support many SHIP industrial use cases.

14 SOLAR ENERGY↗
DOE OSTI2019

Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture

A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.

42 ENGINEERING↗
DOE OSTI2023

Engineering ligand reactivity enables high-temperature operation of stable perovskite solar cells

Perovskite solar cells (PSCs) consisting of interfacial two- and three-dimensional heterostructures that incorporate ammonium ligand intercalation have enabled rapid progress toward the goal of uniting performance with stability. However, as the field continues to seek ever-higher durability, additional tools that avoid progressive ligand intercalation are needed to minimize degradation at high temperatures. We used ammonium ligands that are nonreactive with the bulk of perovskites and investigated a library that varies ligand molecular structure systematically. Here, we found that fluorinated aniliniums offer interfacial passivation and simultaneously minimize reactivity with perovskites. Using this approach, we report a certified quasi–steady-state power-conversion efficiency of 24.09% for inverted-structure PSCs. In an encapsulated device operating at 85°C and 50% relative humidity, we document a 1560-hour T85 at maximum power point under 1-sun illumination.

14 SOLAR ENERGY↗
DOE OSTI2021

Al 0.7 Ga 0.3 N MESFET With All-Refractory Metal Process for High Temperature Operation

In this work, ultrawide bandgap Al 0.7 Ga 0.3 N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗