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Results for “I–V curves”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Thermodynamic Modeling of a Solid Oxide Fuel Cell to Couple with an Existing Gas Turbine Engine Model

The Controls and Dynamics Technology Branch at NASA Glenn Research Center are interested in combining a solid oxide fuel cell (SOFC) to operate in conjunction with a gas turbine engine. A detailed engine model currently exists in the Matlab/Simulink environment. The idea is to incorporate a SOFC model within the turbine engine simulation and observe the hybrid system's performance. The fuel cell will be heated to its appropriate operating condition by the engine s combustor. Once the fuel cell is operating at its steady-state temperature, the gas burner will back down slowly until the engine is fully operating on the hot gases exhausted from the SOFC. The SOFC code is based on a steady-state model developed by The U.S. Department of Energy (DOE). In its current form, the DOE SOFC model exists in Microsoft Excel and uses Visual Basics to create an I-V (current-voltage) profile. For the project's application, the main issue with this model is that the gas path flow and fuel flow temperatures are used as input parameters instead of outputs. The objective is to create a SOFC model based on the DOE model that inputs the fuel cells flow rates and outputs temperature of the flow streams; therefore, creating a temperature profile as a function of fuel flow rate. This will be done by applying the First Law of Thermodynamics for a flow system to the fuel cell. Validation of this model will be done in two procedures. First, for a given flow rate the exit stream temperature will be calculated and compared to DOE SOFC temperature as a point comparison. Next, an I-V curve and temperature curve will be generated where the I-V curve will be compared with the DOE SOFC I-V curve. Matching I-V curves will suggest validation of the temperature curve because voltage is a function of temperature. Once the temperature profile is created and validated, the model will then be placed into the turbine engine simulation for system analysis.

Brinson, Thomas E.↗
NASA NTRS1985

Circuit analysis method for thin-film solar cell modules

The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

Burger, D. R.↗
NASA NTRS1976

Correlation between nonequilibrium thermodynamic theory and V-I curves of a thermionic converter

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

Robinson, L. B.↗
NASA NTRS1983

U, B, V light curves of CO Lacertae

CO Lacertae is one of the very few known binaries with both a short period of apsidal motion and good M, L, R data. The new U, B, V light curves presented here provide two times of minima and a check on Semeniuk's value for P(aps). This is the first published example of an eclipsing binary analyzed in terms of a physical model (as opposed to a model based on spherical or ellipsoidal star figures) which allows for eccentric orbit effects. The light curves show some peculiarities - particularly a large, probably intrinsic, scatter.

Wilson, R. E.↗
NASA NTRS1991

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗
NASA NTRS1992

Electrical and infrared properties of thin niobium microbolometers near T(sub c)

Niobium microbolometers approximately 1 micron wide x 2 micron long x 10 nm thick have been integrated at the feeds of equiangular spiral antennas made of 200 nm thick Nb. The device's current-voltage characteristics and infrared responsivity as a function of DC bias voltage were measured over a range of temperature spanning approximately plus or minus 2 percent around T(sub c). The greatest voltage responsivity occurs well below T(sub c), in a regime where the I-V curve is significantly hysteretic due to self-heating and resembles the I-V curve of a superconducting microbridge.

Grossman, E. N.↗
NASA NTRS1994

The Large Area Pulsed Solar Simulator (LAPSS)

The Large Area Pulsed Solar Simulator (LAPSS) has been installed at JPL. It is primarily intended to be used to illuminate and measure the electrical performance of photovoltaic devices. The simulator, originally manufactured by Spectrolab, Sylmar, CA, occupies an area measuring about 3 m wide x 12 m long. The data acquisition and data processing subsystems have been modernized. Tests on the LAPSS performance resulted in better than plus or minus 2 percent uniformity of irradiance at the test plane and better than plus or minus 0.3 percent measurement repeatability after warm-up. Glass absorption filters reduce the ultraviolet light emitted from the xenon flash lamps. This results in a close match to three different standard airmass zero and airmass 1.5 spectral irradiances. The 2-ms light pulse prevents heating of the device under test, resulting in more reliable temperature measurements. Overall, excellent electrical performance measurements have been made of many different types and sizes of photovoltaic devices. Since the original printing of this publication, in 1993, the LAPSS has been operational and new capabilities have been added. This revision includes a new section relating to the installation of a method to measure the I-V curve of a solar cell or array exhibiting a large effective capacitance. Another new section has been added relating to new capabilities for plotting single and multiple I-V curves, and for archiving the I-V data and test parameters. Finally, a section has been added regarding the data acquisition electronics calibration.

Mueller, R. L.↗
NASA NTRS1976

Introduction to basic solar cell measurements

The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.

Brandhorst, H. W., Jr.↗
NASA NTRS1990

Comparison of currents predicted by NASCAP/LEO model simulations with elementary Langmuir-type bare probe models for an insulated cable containing a single pinhole

The behavior of a defect in the insulation of a short biased section of cable in a Low Earth Orbit (LEO) space environment was examined. Such studies are of the utmost importance for large space power systems where great quantities of cabling will be deployed. An insulated probe containing a pinhole was placed into a hypothetical high speed LEO plasma. The NASA Charging Analyzer Program (NASCAP/LEO) was used to explore sheath growth about the probe as a function of applied voltage and to predict I-V behavior. A set of independent current calculations using Langmuir's formulations for concentric spheres and coaxial cylinders were also performed. The case of concentric spheres was here extended to include the case of concentric hemispheres. Several simple Langmuir-type models were then constructed to bracket the current collected by the cable. The space-charge sheath radius and impact parameters were used to determine the proper current regime. I-V curves were plotted for the models and comparisons were made with NASCAP/LEO results. Finally, NASCAP/LEO potential contours and surface cell potential plots were examined to explain interesting features in the NASCAP/LEO I-V curve.

Galofaro, Joel T.↗
NASA NTRS1988

Resonant-tunneling oscillators and multipliers for submillimeter receivers

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.

Sollner, T. C. L. Gerhard↗
NASA NTRS1973

Excess junction current of silicon solar cells

The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.

Wang, E. Y.↗
NASA NTRS2018

Behavior of Triple Langmuir Probes in Non-Equilibrium Plasmas

The triple Langmuir probe is an electrostatic probe in which three probe tips collect current when inserted into a plasma. The triple probe differs from a simple single Langmuir probe in the nature of the voltage applied to the probe tips. In the single probe, a swept voltage is applied to the probe tip to acquire a waveform showing the collected current as a function of applied voltage (I-V curve). In a triple probe three probe tips are electrically coupled to each other with constant voltages applied between each of the tips. The voltages are selected such that they would represent three points on the single Langmuir probe I-V curve. Elimination of the voltage sweep makes it possible to measure time-varying plasma properties in transient plasmas. Under the assumption of a Maxwellian plasma, one can determine the time-varying plasma temperature T(sub e)(t) and number density n(sub e)(t) from the applied voltage levels and the time-histories of the collected currents. In the present paper we examine the theory of triple probe operation, specifically focusing on the assumption of a Maxwellian plasma. Triple probe measurements have been widely employed for a number of pulsed and timevarying plasmas, including pulsed plasma thrusters (PPTs), dense plasma focus devices, plasma flows, and fusion experiments. While the equilibrium assumption may be justified for some applications, it is unlikely that it is fully justifiable for all pulsed and time-varying plasmas or for all times during the pulse of a plasma device. To examine a simple non-equilibrium plasma case, we return to basic governing equations of probe current collection and compute the current to the probes for a distribution function consisting of two Maxwellian distributions with different temperatures (the two-temperature Maxwellian). A variation of this method is also employed, where one of the Maxwellians is offset from zero (in velocity space) to add a suprathermal beam of electrons to the tail of the main Maxwellian distribution (the bump-on-the-tail distribution function). For a range of parameters in these non-Maxwellian distributions, we compute the current collection to the probes. We compare the distribution function that was assumed a priori with the distribution function one would infer when applying standard triple probe theory to analyze the collected currents. For the assumed class of non-Maxwellian distribution functions this serves to illustrate the effect a non-Maxwellian plasma would have on results interpreted using the equilibrium triple probe current collection theory, allowing us to state the magnitudes of these deviations as a function of the assumed distribution function properties.

Polzin, Kurt A.↗
NASA NTRS1988

Harmonic multiplication using resonant tunneling

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Sollner, T. C. L. G.↗
NASA NTRS2007

The Extrapolation of High Altitude Solar Cell I(V) Characteristics to AM0

The high altitude aircraft method has been used at NASA GRC since the early 1960's to calibrate solar cell short circuit current, ISC, to Air Mass Zero (AMO). This method extrapolates ISC to AM0 via the Langley plot method, a logarithmic extrapolation to 0 air mass, and includes corrections for the varying Earth-Sun distance to 1.0 AU and compensating for the non-uniform ozone distribution in the atmosphere. However, other characteristics of the solar cell I(V) curve do not extrapolate in the same way. Another approach is needed to extrapolate VOC and the maximum power point (PMAX) to AM0 illumination. As part of the high altitude aircraft method, VOC and PMAX can be obtained as ISC changes during the flight. These values can then the extrapolated, sometimes interpolated, to the ISC(AM0) value. This approach should be valid as long as the shape of the solar spectra in the stratosphere does not change too much from AMO. As a feasibility check, the results are compared to AMO I(V) curves obtained using the NASA GRC X25 based multi-source simulator. This paper investigates the approach on both multi-junction solar cells and sub-cells.

Snyder, David B.↗
NASA NTRS1995

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗
NASA NTRS2010

Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space

This innovation represents a method and circuit realization of a system designed to make in-situ measurements of test solar-cell operational parameters on orbit using readily available high-temperature and high-ionizing-radiation- tolerant electronic components. This innovation enables on-orbit in-situ solar-array health monitoring and is in response to a need recognized by the U.S. Air Force for future solar arrays for unmanned spacecraft. This system can also be constructed out of commercial-grade electronics and can be embedded into terrestrial solar power system as a diagnostics instrument. This innovation represents a novel approach to I-V curve measurement that is radiation and temperature hard, consumes very few system resources, is economical, and utilizes commercially available components. The circuit will also operate at temperatures as low as 55 C and up to +225 C, allowing it to reside close to the array in direct sunlight. It uses a swept mode transistor functioning as a resistive load while utilizing the solar cells themselves as the biasing device, so the size of the instrument is small and there is no danger of over-driving the cells. Further, this innovation utilizes nearly universal spacecraft bus resources and therefore can be readily adapted to any spacecraft bus allowing for ease of retrofit, or designed into new systems without requiring the addition of infrastructure. One unique characteristic of this innovation is that it effects the measurement of I-V curves without the use of large resistor arrays or active current sources normally used to characterize cells. A single transistor is used as a variable resistive load across the cell. This multi-measurement instrument was constructed using operational amplifiers, analog switches, voltage regulators, MOSFETs, resistors, and capacitors. The operational amplifiers, analog switches, and voltage regulators are silicon-on-insulator (SOI) technology known for its hardness to the effects of ionizing radiation. The SOI components used can tolerate temperatures up to 225 C, which gives plenty of thermal headroom allowing this circuit to perhaps reside in the solar cell panel itself where temperatures can reach over 100 C.

Krasowski, Michael J.↗
NASA NTRS1997

Cardiac atrophy after bed-rest deconditioning: a nonneural mechanism for orthostatic intolerance

BACKGROUND: The cardiovascular adaptation to bed rest leads to orthostatic intolerance, characterized by an excessive fall in stroke volume (SV) in the upright position. We hypothesized that this large fall in SV is due to a change in cardiac mechanics. METHODS AND RESULTS: We measured pulmonary capillary wedge pressure (PCWP), SV, left ventricular end-diastolic volume (LVEDV), and left ventricular mass (by echocardiography) at rest, during lower-body negative pressure, and after saline infusion before and after 2 weeks of bed rest with -6 degrees head-down tilt (n=12 subjects aged 24+/-5 years). Pressure (P)-volume (V) curves were modeled exponentially by P=ae(kV)+b and logarithmically by P=-Sln[(Vm-V)/(Vm-V0)], where V0 indicates volume at P=0, and the constants k and S were used as indices of normalized chamber stiffness. Dynamic stiffness (dP/dV) was calculated at baseline LVEDV. The slope of the line relating SV to PCWP during lower-body negative pressure characterized the steepness of the Starling curve. We also measured plasma volume (with Evans blue dye) and maximal orthostatic tolerance. Bed rest led to a reduction in plasma volume (17%), baseline PCWP (18%), SV (12%), LVEDV (16%), V0 (33%), and orthostatic tolerance (24%) (all P<.05). The slope of the SV/PCWP curve increased from 4.6+/-0.4 to 8.8+/-0.9 mL/mm Hg (P<.01) owing to a parallel leftward shift in the P-V curve. Normalized chamber stiffness was unchanged, but dP/dV was reduced by 50% at baseline LVEDV, and cardiac mass tended to be reduced by 5% (P<.10). CONCLUSIONS: Two weeks of head-down-tilt bed rest leads to a smaller, less distensible left ventricle but a shift to a more compliant portion of the P-V curve. This results in a steeper Starling relationship, which contributes to orthostatic intolerance by causing an excessive reduction in SV during orthostasis.

NASA Discipline Cardiopulmonary↗
NASA NTRS1992

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗