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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

36 MATERIALS SCIENCE↗

From IMT Device Measurements to Network-Level Consequences: When Learning Suppresses Beyond-LIF Neuron Dynamics

Emerging neuromorphic devices such as insulator--metal transition (IMT) devices exhibit complex temporal dynamics, including slow internal state memory, hysteresis, and burst-like firing, which are poorly captured by conventional leaky integrate-and-fire (LIF) neurons. However, it remains unclear when such dynamics influence learning and inference at the network level, particularly under commonly used unsupervised plasticity rules. We present a controlled, full-stack co-design study spanning experimental characterization of individual IMT devices, compact neuron model development, and large-scale spiking network simulations with identical architectures and learning rules. Rather than optimizing benchmark accuracy, our goal is to diagnose when neuron-level dynamics survive learning and competition, and when they are suppressed, to inform the co-design of devices, networks, and learning rules that can exploit beyond-LIF complexity.

42 ENGINEERING↗

In‐Operando Spatiotemporal Imaging of Coupled Film‐Substrate Elastodynamics During an Insulator‐to‐Metal Transition

Abstract The drive toward non‐von Neumann device architectures has led to an intense focus on insulator‐to‐metal (IMT) and the converse metal‐to‐insulator (MIT) transitions. Studies of electric field‐driven IMT in the prototypical VO 2 thin‐film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO 2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in‐operando spatiotemporal imaging of the coupled elastodynamics using X‐ray diffraction microscopy of a VO 2 film channel device on TiO 2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase‐field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical‐triggering of the IMT via ionizing defects and an active “IMT‐like” substrate layer are critical aspects to consider in device applications.

36 MATERIALS SCIENCE↗

Divergent effects of sex and calcium/vitamin D supplementation on serum magnesium and markers of bone structure and function during initial military training

Maintaining Mg status may be important for military recruits, a population that experiences high rates of stress fracture during initial military training (IMT). The objectives of this secondary analysis were to (1) compare dietary Mg intake and serum Mg in female and male recruits pre- and post-IMT, (2) determine whether serum Mg was related to parameters of bone health pre-IMT, and (3) whether Ca and vitamin D supplementation (Ca/vitamin D) during IMT modified serum Mg. Females (n 62) and males (n 51) consumed 2000 mg of Ca and 25 μg of vitamin D/d or placebo during IMT (12 weeks). Dietary Mg intakes were estimated using FFQ, serum Mg was assessed and peripheral quantitative computed tomography was performed on the tibia. Dietary Mg intakes for females and males pre-IMT were below the estimated average requirement and did not change with training. Serum Mg increased during IMT in females (0·06 ± 0·08 mmol/l) compared with males (–0·02 ± 0·10 mmol/l; P < 0·001) and in those consuming Ca/vitamin D (0·05 ± 0·09 mmol/l) compared with placebo (0·001 ± 0·11 mmol/l; P = 0·015). In females, serum Mg was associated with total bone mineral content (BMC, β = 0·367, P = 0·004) and robustness (β = 0·393, P = 0·006) at the distal 4 % site, stress–strain index of the polaris axis (β = 0·334, P = 0·009) and robustness (β = 0·420, P = 0·004) at the 14 % diaphyseal site, and BMC (β = 0·309, P = 0·009) and stress–strain index of the polaris axis (β = 0·314, P = 0·006) at the 66 % diaphyseal site pre-IMT. No significant relationships between serum Mg and bone measures were observed in males. Findings suggest that serum Mg may be modulated by Ca/vitamin D intake and may impact tibial bone health during training in female military recruits.

59 BASIC BIOLOGICAL SCIENCES↗

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗

Dehydration of UO 2 Cl 2 ·3H 2 O and Nd(NO 3 ) 3 ·6H 2 O with a Soft Donor Ligand and Comparison of Their Interactions through X-ray Diffraction and Theoretical Investigation [plus Supplemental Information]

Herein we investigated whether the relatively Lewis basic imidazole-2-thiones could be used to substitute water ligands bound to f-element cations and generate f-element soft donor complexes. Reactions of 1,3-diethylimidazole-2-thione (C 2 C 2 ImT) with Nd(NO 3 ) 3 ·6H 2 O and UO 2 Cl 2 ·3H 2 O led to the isolation of the anhydrous thione complexes Nd(NO 3 ) 3 (C 2 C 2 ImT) 3 and UO 2 Cl 2 (C 2 C 2 ImT) 2 , characterized by single crystal X-ray diffraction. Differences in the strength of metal–thione interactions have been examined by means of the crystal structure analysis and density functional theory (DFT) calculations. The C 2 C 2 ImT ligands were found to be affected by both coordination and noncovalent interactions, making it impossible to deconvolute the effects of one from the other. Calculated partial atomic charges indicated greater ligand-to-metal charge transfer in the [UO 2 ] 2+ complex, indicative of a stronger interaction. The reactivity of C 2 C 2 ImT demonstrates its usefulness in the preparation of f-element soft donor complexes from readily available hydrates that could be useful intermediates for promoting the coordination and studying the effects of soft donor anions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Non-thermal resistive switching in Mott insulator nanowires

Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Modeling of the metal–insulator transition temperature in alio-valently doped VO 2 through symbolic regression

The correlated semiconductor vanadium dioxide (VO 2 ) exhibits an insulator–metal transition (IMT) near room temperature, which is of interest in various device applications. Precise IMT temperature control is crucial to determine the use cases across technologies such as thermochromic windows, actuators for robots or neuronal oscillators. Doping the cation or anion sites can modulate the IMT by several tens of degrees and control hysteresis. However, modeling the effects of control parameters (e.g., doping concentration, type of dopants) is challenging due to complex experimental procedures and limited data, hindering the use of traditional data-driven machine learning approaches. Symbolic regression (SR) can bridge this gap by identifying nonlinear expressions connecting key input parameters to target properties, even with small data sets. In this work, we develop SR models to capture the IMT trends in VO 2 influenced by different dopant parameters. Using experimental data from the literature, our study reveals a dual nature of the IMT temperature with varying tungsten (W) doping concentrations. The symbolic model captures data trends and accounts for experimental variability, providing a complementary approach to first-principles calculations. Our feature-driven analysis across a broader class of dopants informs selectivity and provides qualitative insights into tuning phase transition properties valuable for neuromorphic computing and thermochromic windows.

36 MATERIALS SCIENCE↗

Quadratic magnetoresistance across the insulator–metal transition in V4O7 thin films

We present a comparative magnetotransport study of V4O7 thin films grown simultaneously on single-crystal Al2O3 (r-cut) and amorphous SiO2 substrates, to examine substrate-induced effects on electronic transport across the insulator–metal transition (IMT). Temperature-dependent resistivity reveals a broad electronic ordering regime below the IMT, with both films exhibiting similar transition temperatures but differing by nearly an order of magnitude in absolute resistivity. Despite this strong substrate dependence of the resistivity scale, the magnetoresistance remains predominantly quadratic in magnetic field over wide temperature intervals for both substrates. Analysis of the quadratic magnetoresistance defines an effective mobility scale that evolves systematically across the IMT and exhibits a similar temperature dependence for the two films. Structural characterization, including atomic-resolution scanning transmission electron microscopy of the V4O7/Al2O3 interface and azimuthal X-ray diffraction measurements, reveals a sharp interface and well-defined in-plane crystallographic registry for the r-cut film, in contrast to the rotationally averaged in-plane structure expected for films grown on amorphous SiO2. These results indicate that while substrate-controlled structural registry modifies the resistivity scale, the quadratic magnetotransport response across the IMT remains largely robust, providing a consistent diagnostic of electronic transport in V4O7 thin films.

25 ENERGY STORAGE↗

Magnetic order driven ultrafast phase transition in NdNiO 3

Ultrashort x-ray pulses can be used to disentangle magnetic and structural dynamics and are accordingly utilized here to study the photoexcitation of NdNiO 3 (NNO), a model nickelate exhibiting structural and magnetic dynamics that conspire to induce an insulator-to-metal transition (IMT). Here, during the course of the photoinduced IMT with above-gap excitation, we observe an ultrafast (< 180 fs) quenching of magnetic order followed by a time delayed collapse of the insulating phase probed by x-ray absorption and THz transmission (450 fs) that correlates with the slowest optical phonon mode involved in the structural transition. A simultaneous order-disorder response at the Ni site and displacive response at the Nd site coexist in the ultrafast magnetic response. Crucially, we observe the optical phonon through its coherent coupling with Nd magnetic order, demonstrating that the magnetic and structural degrees of freedom both contribute in driving the IMT. Density functional theory calculations reveal a consistent scenario where optically driven intersite charge transfer drives a collapse of antiferromagnetic order that in turn destabilizes the charge-ordered phase resulting in an IMT. These experiments provide different modalities for the control of electronic phase transitions in quantum materials based on the ultrafast interplay between structural and magnetic orders created by femtosecond photoexcitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evaluation of Solar Reference Cells on a Two-Axis Tracker Using Spectral Measurements

A simple model calculating the performance of an IMT solar reference cell is proposed and tested under clear sky periods. One-minute data from EKO spectroradiometers collocated with an IMT reference cell are used for the analysis. Data are obtained at the NREL Solar Radiation Research Laboratory in Golden, Colorado and the UO Solar Radiation Monitoring Laboratory in Eugene, Oregon. The model is also applied and evaluated under cloudy conditions. A match of better than 1% is found between calculated clear sky values and IMT measurements for July, 2020. One- minute cloudy sky comparisons show a much larger variation, but when averaged over one hour, a standard deviation of 4% between the calculated and measured values is found.

atmospheric radiation↗

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗

Direct Simulations of H–He Mixtures at Planetary Interior Conditions: Demixing, Insulator–Metal Transition and Miscibility Boundaries

Accurate knowledge of the electrical and thermal conductivities and structural properties of hydrogen–helium mixtures under thermodynamic conditions within and beyond the immiscibility range is very important to predict the thermal evolution and internal structure of gas giant planets like Jupiter and Saturn. Here, we propose a novel method to determine the immiscibility boundary accurately without the need for free energy calculations, while providing consistent insights into structural and transport properties of mixtures. We show with direct large-scale ab initio simulations that the insulator–metal transition (IMT) of the hydrogen subsystem is strongly affected by an admixture with a small fraction of helium and occurs at temperatures significantly higher than those of pure hydrogen. At pressures below 150 GPa, the IMT boundary is not related anymore to the H 2 subsystem dissociation, the system remains insulating even after the full dissociation of H 2 molecules and its transition to an H–He mixture. The offset of the IMT in the H–He mixture relative to the dissociation region in the hydrogen subsystem and the significant reduction of static electrical and thermal conductivity by a factor between two and a few thousand relative to pure hydrogen found in mixtures have consequences for Jupiter and Saturn’s thermal evolution, internal structure, and dynamo action, affecting a large fraction of the interior of both planets.

Helium↗

Probing nuclear effects with neutrino-induced charged-current neutral pion production

We study neutrino-induced charged-current (CC) $\pi^0$ production on carbon nuclei using events with fully imaged final-state proton-$\pi^0$ systems. Novel use of final-state correlations based on transverse kinematic imbalance enable the first measurements of the struck nucleon's Fermi motion, of the intranuclear momentum transfer (IMT) dynamics, and of the final-state hadronic momentum configuration in neutrino pion production. Event distributions are presented for i) the momenta of neutrino-struck neutrons below the Fermi surface, ii) the direction of missing transverse momentum characterizing the strength of IMT, and iii) proton-pion momentum imbalance with respect to the lepton scattering plane. The observed Fermi motion and IMT strength are compared to the previous MINERvA measurement of neutrino CC quasielastic-like production. The measured shapes and absolute rates of these distributions, as well as the cross-section asymmetries show tensions with predictions from current neutrino generator models.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Summary of LWRS Research in Addressing RPV Research Gaps in NRC EMDA Report

Reactor Pressure Vessels (RPVs) are critical components in nuclear reactors, housing the reactor core and coolant under extreme conditions of temperature, pressure, and radiation. These harsh environments contribute to the degradation of RPV materials over time, presenting challenges for extending reactor operations beyond their original design lifespans. The NRC Expanded Materials Degradation Assessment (EMDA) report volume 3 have been instrumental in guiding research to support extending the operational life of light water reactors (LWRs) up to 80 years. It provides a comprehensive framework to address technical challenges related to aging and degradation mechanisms in RPVs. The LWRS program has played a key role in advancing this research, supporting projects such as the UCSB ATR-2 Experiment, material testing from Zion and Palisades reactors, and the development of advanced mini-compact tension testing techniques. These efforts have been crucial in identifying and addressing gaps in our understanding of RPV aging, contributing to the successful subsequent license renewals of eight LWR units in the U.S. The EMDA report volume 3, built on the Phenomena Identification and Ranking Table (PIRT) analysis from earlier versions of the EPRI Materials Degradation Matrix (MDM) and Issue Management Tables (IMTs), provides a detailed assessment of RPV degradation mechanisms. However, as EPRI has updated the MDM and IMT, it is important to revisit research priorities and methodologies to reflect these changes. The revised MDM and IMT may introduce new factors affecting long-term RPV performance and safety, highlighting the need for continued research and updated guidance to ensure the reliable and safe operation of reactors beyond 80 years.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Young’s modulus of V 3 O 5 thin films

Vanadium oxide V 3 O 5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V 3 O 5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V 3 O 5 thin films has been determined by measuring the fundamental resonant frequency of V 3 O 5 -coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V 3 O 5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V 3 O 5 .

36 MATERIALS SCIENCE↗