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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~10{sup 19} cm{sup –3} are reported. The layers are grown by molecular-beam epitaxy with the plasma activation of nitrogen on sapphire substrates with AlN and GaN buffer layers. It is found that, as the InN layers are grown under conditions with enrichment with nitrogen at a growth temperature elevated to 470°C close to the beginning of the decomposition of InN, the crystal quality of the layers is improved and the stimulated-emission threshold is lowered. As the conditions of growth change to conditions with enrichment with the metal, two emission bands separated by an energy of 100 meV are observed in the spontaneous-photoluminescence spectra of InN. For such layers, a substantial increase in the stimulated-emission threshold and, in some cases, the lack of a transition to stimulated emission are observed. In the study, an interpretation of the observed emission bands is given and some inferences as to their nature are made.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol–gel spin coating method

Highlights: • A study on indium nitride growth via sol-gel spin coating and nitridation. • Thermal decomposition effects of ammonia gas on films properties are investigated. • Chemical processes describing InN crystal growth are revealed. • Thermal etching effect and metallic indium are observed at increasing temperature. • New insights in synthesizing InN thin films with a simple and low cost method. - Abstract: Indium nitride (InN) thin films grown on aluminum nitride on p-type silicon (111) [AlN/p-Si(111)] substrates are prepared via sol–gel spin coating method followed by nitridation. The thermal decomposition effects of ammonia (NH{sub 3}) gas on the structural properties and surface morphologies of the deposited films are investigated. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly as thermal decomposition of NH{sub 3} gas increases from 700 to 850 °C, at which indium oxide (In{sub 2}O{sub 3}) forms in the deposited films. The thermal etching effect and formation of indium droplet on the film are observed at 850 °C. These findings are consistent with those of elementary and cross-sectional analysis obtained through energy dispersive spectroscopy and field-emission scanning electron microscopy. The findings deduced that InN thin films with densely packed grains can be grown at NH{sub 3} decomposition temperature of 700 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

Within the framework of an ensemble semi-classical three-valley Monte Carlo electron transport simulation approach, we critically contrast the nature of the electron transport that occurs within the wurtzite and zinc-blende phases of indium nitride in response to the application of a constant and uniform electric field. We use the electron energy distribution and its relationship with the electron transport characteristics in order to pursue this analysis. For the case of zinc-blende indium nitride, only a peak corresponding to the electrons within the lowest energy conduction band valley is observed, this peak being seen to broaden and shift to higher energies in response to increases in the applied electric field strength, negligible amounts of upper energy conduction band valley occupancy being observed. In contrast, for the case of wurtzite indium nitride, in addition to the aforementioned lowest energy conduction band valley peak in the electron energy distribution, and its broadening and shifting to higher energies in response to increases in the applied electric field strength, beyond a certain critical electric field strength, 30 kV/cm for the case of this particular material, upper energy conduction band valley occupancy is observed, this occupancy being further enhanced in response to further increases in the applied electric field strength. Reasons for these results are provided. The potential for device consequences is then commented upon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

How Indium Nitride Senses Water

The unique electronic band structure of indium nitride InN, part of the industrially significant III-N class of semiconductors, offers charge transport properties with great application potential due to its robust n-type conductivity. Here, we explore the water sensing mechanism of InN thin films. Using angle-resolved photoemission spectroscopy, core level spectroscopy, and theory, we derive the charge carrier density and electrical potential of a two-dimensional electron gas, 2DEG, at the InN surface and monitor its electronic properties upon in situ modulation of adsorbed water. An electric dipole layer formed by water molecules raises the surface potential and accumulates charge in the 2DEG, enhancing surface conductivity. Our intuitive model provides a novel route toward understanding the water sensing mechanism in InN and, more generally, for understanding sensing material systems beyond InN.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Effect of polarization field on mean free path of phonons in indium nitride

The effect of built-in-polarization field on mean free path of acoustic phonons in bulk wurtzite indium nitride (InN) has been theoretically investigated. The elastic constant of the material gets modified due to the existence of polarization field. As a result velocity and Debye frequency of phonons get enhanced. The various scattering rates of phonons are suppressed by the effect of polarization field, which implies an enhanced combined relaxation time. Thus phonons travel freely for a longer distance between two successive scatterings. This would enhance the thermal transport properties of the material when built-in-polarization field taken into account. Hence by the application of electric field the transport properties of such materials can be controlled as and when desired.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride

A non-traditional, for AlInN, method of controlling adatom kinetics and a low temperature growth condition were employed to improve the quality of high indium content aluminum indium nitride films. Metal-rich surfaces were used to enhance adatom mobility and compensate for the low growth temperature (Tsub ≤ 400 °C) effect of reducing surface diffusion lengths. The metal-rich approach resulted in 12 times lower x-ray diffraction full-width at half-maximum rocking curve figures of merit when compared to literature. In addition to promising photoluminescence emission, these results indicate improved structural quality over other reported approaches. AlInN films with ∼70% indium content were characterized via x-ray diffraction, atomic force microscopy, and photoluminescence spectroscopy with each technique indicating an optimal growth temperature of 350 °C. Al0.3In0.7N grown above 400 °C exhibited phase separation and a reduction in quality, while samples grown colder were predominantly single-phase and displayed improved photoluminescence at ∼1.45 eV. The photoluminescence spectra suggest emission from quantum wire-like structures with dimensions ranging from 15 to 18 nm. These low-temperature, metal-rich findings for high indium content AlInN are promising for future long-wavelength III-nitride optical devices.

Engel, Zachary (ORCID:0000000205021981)↗
DOE OSTI2018

Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

Auger recombination in InN films grown by metal-organic chemical vapor deposition was studied by steady-state photoluminescence at different laser excitation powers and sample temperatures. It was dominant over radiative recombination and Shockley-Read-Hall recombination at low temperatures, contributing to the sub-linear relationship between the integrated photoluminescence intensity and laser excitation power. Auger recombination rates increased gradually with temperature with an activation energy of 10-17 meV, in good agreement with values from transient photoluminescence reported in literature. As the Auger recombination rates were independent of material quality, they may form an upper limit to the luminous efficiency of InN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε{sub ∞}. Negative pressure coefficients of −8.8 × 10{sup −2 }GPa{sup −1} and −14.8 × 10{sup −2 }GPa{sup −1} are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Radiative and Auger recombination processes in indium nitride

InN and In-rich InGaN alloys emit in the infrared range desirable for telecommunication applications. However, the droop problem reduces their efficiency at high power. Nonradiative Auger recombination is a strong contributor to this efficiency loss. Here, we investigate radiative and Auger recombination in InN and In-rich InGaN with first-principles calculations. We find that the direct eeh process dominates Auger recombination in these materials. In the degenerate carrier regime, the Auger and radiative rates are suppressed by different mechanisms: the radiative rate is affected by phase-space filling while Auger recombination is primarily reduced by free-carrier screening. The suppression of the radiative rate onsets at lower carrier densities than that of the Auger rate, which reduces the internal quantum efficiency of InN devices. Droop in InN can be mitigated by increasing the bandgap through alloying with GaN. Here, we demonstrate that the peak efficiency of In 0.93 Ga 0.07 N alloys (which emit at 1550 nm) is 33% higher than that of InN and occurs at higher carrier densities.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Nanoscale selective growth and microstructural control of indium nitride (InN)

Selective area growth (SAG) is a phenomenon in thin film deposition where the sample surface is masked by a dielectric or refractory layer such that growth takes place only in the exposed window regions. As the opening window is pushed to nano-scale, it becomes possible to confine and control epitaxial evolution with lithographically engineered geometry with a feature size comparable to that ofa single nucleus. Two fundamental questions in nano-scale SAG are studied. The first one is how does nano-scale constriction in one direction impact the microstructure evolution in the other orthogonal directions. The other question is how does the presence of nano-scale geometric boundaries affect the crystallographic orientation in selective area epitaxy? InN is chosen as a case study to demonstrate the efficacy and unveil the science in nano-scale SAG. For the first time, we achieve uniform InN nanowires in the large scale with nano-trenches. The engineering of InN nuclei with interfacial energy and the possibility of orientation filtering are also studied.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗