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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, in this study, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.

Seo, M. [Lawrence Livermore National Laboratory (L↗
DOE OSTI2026

Dynamics of Radiation Damage Buildup in Ultrathin Hexagonal Boron Nitride Films under Ion Bombardment

Two-dimensional hexagonal boron nitride (hBN) is attractive for several emerging applications. Ion bombardment can be used to modify the hBN properties. However, the understanding of radiation damage buildup in hBN remains limited. Here, we investigate the effects of the dose rate and ion mass on radiation damage buildup by studying 40 nm-thick hBN films bombarded at room temperature with 500 keV 4 He, 15 N, 40 Ar, and 129 Xe ions and comparing with results for ion bombardment of polycrystalline hBN ceramics. Raman spectroscopy is used to quantify damage buildup, and transmission electron microscopy is used for microstructural analysis. Experiments are complemented by molecular dynamics simulations of the formation and evolution of point defects. Lighter ions are found to be more efficient at disordering hBN than heavier ions. This observation points to a critical role of intracascade defect processes. In contrast, a negligible dose rate effect observed suggests limited intercascade defect dynamic annealing processes for these irradiation conditions. These findings provide a fundamental basis for hBN defect engineering.

2D materials↗
DOE OSTI2025

Local control of perpendicular magnetic anisotropy of Pd/Co multilayers via ion bombardment

In this work, we have controlled locally the magnetic anisotropy of PdCo multilayers using ion beam modification. First, we have used techniques with different probing depths to confirm that cobalt is partially oxidized in the Pd/Co multilayers exhibiting PMA fabricated by sputtering, presumably due to the diffusion of atmospheric oxygen migrated through the Pd capping layer. Then, low energy ion bombardment has been employed to induce a structural disorder in the upper layers of the multilayer, gradually reducing the PMA at local scale with increasing ion doses. Medium ion doses lead to a marked decline in PMA, resulting in equivalent magnetic anisotropy directions and the loss of characteristic labyrinthine magnetic domain morphology. High ion doses completely suppress PMA, yielding a typical in-plane shape anisotropy. Furthermore, by combining controlled PMA reduction via lithographic techniques, we create elongated structures displaying distinct magnetic responses; bombarded regions exhibit reduced PMA, whereas adjacent regions maintain their PMA. Notably, regions with reduced PMA do not disrupt the distribution of perpendicular magnetic domains in neighboring PMA regions, even at widths as narrow as 500 nm, demonstrating the robustness of the PMA domain structure.

Sebastiani-Tofano, Eugenia [Universidad Complutens↗
DOE OSTI2027

Low thermal budget dopant activation in shallow junctions of implanted Si via Tunable plasma enhanced annealing

Low thermal budget (LTB) annealing has become increasingly critical for shallow junctions as semiconductor devices are scaled down. Plasma Enhanced Annealing (PEA) has emerged as a promising LTB annealing process, however its mechanisms remain unclear. In this study, arsenic and boron implanted silicon wafers were subjected to helium or argon ion bombardment generated by annealing plasmas under controlled ion energies and doses in a home-built annealing reactor. The structural and electrical changes were characterized by four-point probe measurements, secondary ion mass spectrometry, Raman spectroscopy and spectroscopic ellipsometry. A pronounced reduction in sheet resistance, accompanied by a decrease in the damage layer thickness demonstrates the surface selective annealing capability of PEA process. Comparative studies using He and Ar plasmas and related ion bombardment reveal a dependence of activation efficacy on both ion species and the dopant implantation profile. Furthermore, a multi-step annealing mechanism is proposed, consisting of an initial (low dose) structural recovery stage followed by the generation of “extended” defects and concluded at large doses by an enhanced dopant activation. The proposed annealing kinetics are thought to be controlled by ion flux, dose and energy. Finally, these results highlight PEA as an effective, surface-selective, LTB approach for shallow-dopant activation and near surface annealing, and provide mechanistic insights into PEA processes.

dopant activation↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
DOE OSTI2024

Atomic scale etching of diamond: insights from molecular dynamics simulations

Diamond is a promising material for multiple applications in quantum information processing and sensing as well as applications in microelectronics. However, diamond devices can be limited by surface defects that compromise charge stability and spin coherence, among others. Improved strategies in plasma etching of diamond could play an important role in minimizing or eliminating these defects. In this work, we explore plasma-assisted atomic scale etching of diamond using argon ions (Ar + ), hydrogen ions (H + ) and hydrogen atoms (H). We employ classical molecular dynamics (MD) simulations and test several interatomic potentials based on the Reactive Empirical Bond Order (REBO) form with comparisons to a variety of published experimental results. We performed MD simulations of low-energy hydrogen ($\leqslant$50 eV) and argon ( $\leqslant$200 eV) ion bombardment of diamond surfaces. Ar + bombardment can be used to locally smooth initially rough diamond surfaces via the formation of an amorphous C layer, the thickness of which increases with argon ion energy. Subsequent exposure with hydrogen ions (or fast neutrals) will selectively etch this amorphous C layer, leaving the underlying diamond layer mostly intact if the H energy is maintained below about 10 eV. The simulations suggest that combining Ar + smoothing with selective, near threshold energy H removal of amorphous C can be an effective strategy for diamond surface engineering, leading to more reliable and sensitive diamond color center devices.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Net lithium deposition and dominant self-sputtering in lithium tokamak experiment-β with a liquid lithium wall

We observed enhanced net lithium deposition and lithium erosion, possibly dominated by physical sputtering of lithium by lithium-ion bombardment, on the outer plasma-facing surface in the Lithium Tokamak eXperiment-β (LTX-β) during liquid lithium wall operations. Silicon crystal samples with micro-trenches (30 μm × 30 μm × 2–7 μm deep) were exposed to hydrogen plasmas in LTX-β for solid and liquid lithium wall operations. Post-mortem analysis using X-ray photoelectron spectroscopy combined with argon ion sputtering measured net lithium deposition of 8.2 or 21 nm on the silicon crystal surface exposed for ~ 50 repeated shots of ~ 50-ms hydrogen plasma discharges during the liquid lithium wall operations at a vessel temperature of 475 K. Energy dispersive X-ray spectroscopy measured oxygen concentration patterns on the micro-trench floors, which were due to oxidized lithium deposition. Using the inhomogeneous oxygen concentration pattern caused by an ion-shadowing effect associated with the micro-trench’s geometric structure, we determined a polar incident ion direction of 68.4 ± 1.6° referenced to the surface normal direction. This observation was well-explained by the hypothesis that self-sputtering of Li was a dominant lithium erosion source in addition to lithium sputtering by hydrogen bombardment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Additively manufactured refractory high-entropy alloys with superior radiation resistance

Refractory high-entropy alloys (RHEAs) are promising candidates for next-generation nuclear and high-temperature applications. Among many approaches to manufacture RHEAs, additive manufacturing (AM) represents the most recent and advanced metal manufacturing method which allows near-net-shape manufacturing to reduce material waste and post-processing time. However, performance of AM RHEAs under complex irradiation conditions remains largely unexplored. Here, in this study, we demonstrate for the first time the response of directed energy deposition (DED) AM quaternary RHEAs (HfTaVW, CrTaVW) subjected to sequential dual-beam ion irradiation, consisting of helium pre-implantation followed by high-dose heavy ion bombardment. Compositions of DED AM RHEAs were selected using Monte Carlo (MC) simulations based on a cluster expansion (CE) Hamiltonian parameterized by density functional theory (DFT). Post-irradiation microstructural characterization revealed that the AM RHEA maintained remarkable stability, with suppressed helium bubble growth and reduced defect accumulation compared to conventional alloys. Even at high doses (∼100 dpa), the alloy exhibited no void swelling, a low density of dislocation loops, and no evidence of severe degradation. These results highlight the intrinsic ability of AM-derived microstructures and multicomponent chemistry to synergistically mitigate irradiation effects. Our findings establish AM RHEAs as a class of materials with superior resistance to radiation damage under conditions relevant to advanced fusion and fission environments and demonstrate the importance of sequential ion beam studies in evaluating their long-term performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dielectric Barrier Discharge Electrothermal Heating and Additive Manufacturing of Thermoset Parts

Additive manufacturing of thermosets requires a mechanism for solidifying deposited layers in order to prevent part collapse. To accomplish this, non‐equilibrium plasma is proposed for its ability to target, heat, and cure printed thermosetting resin. Non‐equilibrium plasmas have not been used for the curing of liquid thermoset composites, and so their impact on an uncured resin is unknown. Here this work investigates the mechanism through which dielectric barrier discharge (DBD) heats an epoxy/carbon nanotube (CNT) composite under atmospheric conditions. Plasma applied to resin surfaces is found to cause rapid heating, with heating rate controlled by adjusting the applied power. Heating is localized to within the top 0.5 mm of the sample surface and maximum temperature is found to depend on sample conductivity, indicating the heating reaction occurs through a combination of electron conduction and ion bombardment. Characterization of composites cured using plasma shows oxidation and roughening of the surface. Based on the heating and surface studies, several demonstrative prints are performed using in situ plasma curing. This work shows the potential of DBD plasma to rapidly heat liquid substrates and demonstrates how plasma curing expands the capability of existing direct ink write (DIW) printer technologies.

3D printing↗
DOE OSTI2025

General kinetic ion-induced electron emission model for metallic walls applied to biased Z-pinch electrodes

A kinetic ion-induced electron emission (IIEE) model for general applications is developed to obtain the emitted electron energy spectrum for a distribution of ion impacts on a metallic surface. We assume an ionization cascade mechanism and use empirical models for the ion and electron stopping powers. The emission spectrum and the secondary electron yield (SEY) are validated for a variety of materials. The IIEE model is used to study the effect of IIEE on the plasma-material interactions of Z-pinch electrodes. Un-magnetized Boltzmann-Poisson simulations are performed for a Z-pinch plasma doubly bounded by two biased copper electrodes with and without IIEE at bias potentials from 0 to 9 kV. At the anode, the SEY decreases from 0 to 1 kV, but then increases at higher bias potentials. At the cathode, the SEY is much larger due to higher energy ion bombardment and grows with bias potential. As the bias potential increases, the emitted cathode electrons are accelerated to higher energies into the domain, collisionally heating the plasma. Above 1 kV, the heating is strong enough to increase the plasma potential. Despite SEY greater than 1, only a classical sheath forms as opposed to a space-charge limited or inverse sheath due to the emitted electron flux not reaching the space charge current saturation limits. Furthermore, the current in the emissionless cases saturates to a value lower than experiment. With IIEE, the current does not saturate and continues to increase with the 4 kV case, matching most closely with the experiment.

Carbon based materials↗
DOE OSTI2025

Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (⁠~ 10 -11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

2D materials↗
DOE OSTI2024

A novel diamond-like carbon based photocathode for PICOSEC Micromegas detectors

The PICOSEC Micromegas (MM) detector is a precise timinggaseous detector based on a MM detector operating in a two-stageamplification mode and a Cherenkov radiator. Prototypes equippedwith cesium iodide (CsI) photocathodes have shown promising timeresolutions as precise as 24 picoseconds (ps) for Minimum IonizingParticles. However, due to the high hygroscopicity andsusceptibility to ion bombardment of the CsI photocathodes,alternative photocathode materials are needed to improve therobustness of PICOSEC MM. Diamond-like Carbon (DLC) film have beenintroduced as a novel robust photocathode material, which have shownpromising results. A batch of DLC photocathodes with differentthicknesses were produced and evaluated using ultraviolet light. Thequantum efficiency measurements indicate that the optimizedthickness of the DLC photocathode is approximately3 nm. Furthermore, DLC photocathodes show good resistance to ionbombardment in aging test compared to the CsI photocathode. Finally,a PICOSEC MM prototype equipped with DLC photocathodes was tested inmuon beams. A time resolution of around 42 ps with a detectionefficiency of 97% for 150 GeV/c muons were obtained. These resultsindicate the great potential of DLC as a photocathode for thePICOSEC MM detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Interfacial alloying contributions to the magnetic proximity effect in Pt/dysprosium iron garnet

The magnetic proximity effect (MPE), a magnetic response from a heavy metal layer induced by an adjacent magnetic layer, plays an important role in the behavior of heavy-metal/ferro- or ferrimagnet thin film heterostructures. However, in the case of heavy-metal/rare earth iron garnet bilayers the presence and magnitude of the MPE has been debated. We previously reported an MPE in a Pt/dysprosium iron garnet (DyIG) heterostructure where the two layers were grown without breaking vacuum, finding that the magnetic moment present in the Pt layer scales with the magnitude of the DyIG moment and varies nonmonotonically through the DyIG compensation temperature. However, the origin of the magnetic signal from the Pt layer was not identified. In contrast, Pt/DyIG grown with a vacuum break did not exhibit an MPE. Here we investigate the origin of the magnetic moment in the Pt layer using x-ray absorption spectroscopy, x-ray circular dichroism, composition mapping and simulations of ion bombardment. In conclusion, the results are consistent with the presence of an intermixed Fe-Dy-Pt interfacial alloy layer formed during the growth of the Pt on the DyIG and resulting in a measurable MPE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Decay of a microsecond seniority 3 isomeric state in Hf 155

Excited states in the neutron-deficient nuclide Hf 155 have been investigated in experiments performed at the Accelerator Laboratory of the University of Jyväskylä. The Hf 155 nuclei were produced in fusion-evaporation reactions induced by beams of 295 and 315 MeV Ni 58 ions bombarding an isotopically enriched Pd 102 target and separated using the recoil mass separator MARA. An isomeric state having a half-life of 510(30) ns was discovered and is interpreted as a seniority υ = 3 , ( π h 11 / 2 2 ⊗ ν f 7 / 2 ) 27 / 2 − configuration. The γ -ray transitions emitted in the deexcitation of the isomeric state to the ground state were identified and a level scheme was constructed, from which the excitation energy of the isomer was determined to be 2581.5(10) keV. A B ( E 2 ) value of 0.45(3) W.u. was deduced for the 105.4 keV transition depopulating the isomeric state. The deduced level scheme and B ( E 2 ) value are compared with systematics and shell-model calculations. Published by the American Physical Society 2024

Physics↗
DOE OSTI2024

On the Life Expectancy of High-Power CW magnetrons for Superconducting Accelerators*

Utilization of the high-power CW magnetrons as RF sources in SRF accelerators was proposed in a number of works, e.g., [1, 2]. But typically, the CW high-power magnetrons are designed as RF sources for industrial heating, and the lifetime of the tubes is not the first priority as it is required for high-energy accelerators. The high-power CW magnetrons use cathodes made of pure tungsten. The emission properties of the tungsten cathodes are not deteriorated much by electron and ion bombardment, but the latter causes sputtering of the cathode in the magnetron crossed fields. The sputtered cathode material covers the magnetron interior. That leads to sparks and discharges in a magnetron limiting its lifetime. Thus, the life expectancy estimates are highly important for application of CW magnetrons in SRF accelerator projects.

43 PARTICLE ACCELERATORS↗