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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, in this study, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.

Seo, M. [Lawrence Livermore National Laboratory (L↗
DOE OSTI2017

Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO 3 Thin Films

Despite continued interest in the multiferroic BiFeO 3 for a diverse range of applications, use of this material is limited by its poor electrical leakage. This work demonstrates some of the most resistive BiFeO 3 thin films reported to date via defect engineering achieved via high-energy ion bombardment. High leakage in as-grown BiFeO 3 thin films is shown to be due to the presence of moderately shallow isolated trap states, which form during growth. Ion bombardment is shown to be an effective way to reduce this free carrier transport (by up to ≈4 orders of magnitude) by trapping the charge carriers in bombardment-induced, deep-lying defect complexes and clusters. The ion bombardment is also found to give rise to an increased resistance to switching as a result of an increase in defect concentration. This study demonstrates a systematic ion-dose-dependent increase in the coercivity, extension of the defect-related creep regime, increase in the pinning activation energy, decrease in the switching speed, and broadening of the field distribution of switching. Ultimately, the use of such defect-engineering routes to control materials will require identification of an optimum range of ion dosage to achieve maximum enhancement in resistivity with minimum impact on ferroelectric switching.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Control of superconductivity in MgB 2 by ion bombardment

The superconducting properties of MgB 2 can be modified via controlled introduction of lattice defects by ion bombardment. Here, magnetometry and Raman spectroscopy are used to study~160 nm-thick MgB 2 films bombarded at room temperature with megaelectronvolt-energy He, Ar, or Xe ions. Ion bombardment leads to a monotonic reduction in the critical superconducting transition temperature, transition width, and critical current density. There is a clear collision cascade density effect, whereby radiation-induced changes, once normalized to the number of atomic displacements generated, are greater for heavier ions. The sharpening of the superconducting transition with increasing ion dose suggests improved homogeneity of irradiated films. The suppression of superconducting properties correlates with the growth of defect signatures revealed by Raman spectroscopy. Superconducting properties can be recovered by annealing at relatively low temperatures of 500 °C, even for films exposed to high doses of heavy ions. These results have direct implications for the performance of MgB 2 in radiation environments and understanding its defect-mediated superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films

Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.

Kim, Jieun↗
DOE OSTI2026

Dynamics of Radiation Damage Buildup in Ultrathin Hexagonal Boron Nitride Films under Ion Bombardment

Two-dimensional hexagonal boron nitride (hBN) is attractive for several emerging applications. Ion bombardment can be used to modify the hBN properties. However, the understanding of radiation damage buildup in hBN remains limited. Here, we investigate the effects of the dose rate and ion mass on radiation damage buildup by studying 40 nm-thick hBN films bombarded at room temperature with 500 keV 4 He, 15 N, 40 Ar, and 129 Xe ions and comparing with results for ion bombardment of polycrystalline hBN ceramics. Raman spectroscopy is used to quantify damage buildup, and transmission electron microscopy is used for microstructural analysis. Experiments are complemented by molecular dynamics simulations of the formation and evolution of point defects. Lighter ions are found to be more efficient at disordering hBN than heavier ions. This observation points to a critical role of intracascade defect processes. In contrast, a negligible dose rate effect observed suggests limited intercascade defect dynamic annealing processes for these irradiation conditions. These findings provide a fundamental basis for hBN defect engineering.

2D materials↗
DOE OSTI2025

Local control of perpendicular magnetic anisotropy of Pd/Co multilayers via ion bombardment

In this work, we have controlled locally the magnetic anisotropy of PdCo multilayers using ion beam modification. First, we have used techniques with different probing depths to confirm that cobalt is partially oxidized in the Pd/Co multilayers exhibiting PMA fabricated by sputtering, presumably due to the diffusion of atmospheric oxygen migrated through the Pd capping layer. Then, low energy ion bombardment has been employed to induce a structural disorder in the upper layers of the multilayer, gradually reducing the PMA at local scale with increasing ion doses. Medium ion doses lead to a marked decline in PMA, resulting in equivalent magnetic anisotropy directions and the loss of characteristic labyrinthine magnetic domain morphology. High ion doses completely suppress PMA, yielding a typical in-plane shape anisotropy. Furthermore, by combining controlled PMA reduction via lithographic techniques, we create elongated structures displaying distinct magnetic responses; bombarded regions exhibit reduced PMA, whereas adjacent regions maintain their PMA. Notably, regions with reduced PMA do not disrupt the distribution of perpendicular magnetic domains in neighboring PMA regions, even at widths as narrow as 500 nm, demonstrating the robustness of the PMA domain structure.

Sebastiani-Tofano, Eugenia [Universidad Complutens↗
DOE OSTI2019

The Structure and Electrophysical Properties of Multiwall Carbon Nanotubes Subjected to Argon Ion Bombardment

The morphology, structure, and electrophysical characteristics of multiwall carbon nanotubes (MWCNTs), as affected by defects induced by ion bombardment, are studied using Raman spectroscopy and scanning and transmission electron microscopies. Annealing in an inert atmosphere results in partial recovery of the nanotube structure: the nanotube walls contain regions of recovered graphene structure and regions plagued with extended defects that result in corrugation of graphene layers comprising the walls of MWCNTs. These structural alterations result in a marked decrease in conductivity of the processed MWCNTs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Calculation of Self-Sputtering Yield under Ion Bombardment of Solids: Computer Simulation and Theory

We developed a computer simulation program for investigation of solid self-sputtering under ion bombardment. The program is based on binary collision approximation, truncated Coulomb potential, and the model of local inelastic losses proportional to energy. As a result of simulation, the self-sputtering yield is calculated as a function of atomic number and ion energy. To verify the cascade simulation code, we created a self-sputtering theory for the case of hard sphere potential. Simulation results show good agreement with both experimental data and theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processes in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. Additionally, the possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

High-mass heterogeneous cluster formation by ion bombardment of the ternary alloy Au 7 Cu 5 Al 4

The ternary alloy Au 7 Cu 5 Al 4 was irradiated with 0.1–10 keV Ar + and the surface composition analyzed using laser sputter neutral mass spectrometry. Ejected clusters containing up to seven atoms, with masses up to 2000 amu, were observed. By monitoring the signals from sputtered clusters, the surface composition of the alloy was seen to change with 100 eV Ar + dose, reaching equilibrium after 10 nm of the surface was eroded, in agreement with TRIDYN simulation and indicating that the changes were due to preferential sputtering of Al and Cu. Ejected gold containing clusters were found to increase markedly in intensity while aluminum containing clusters decreased in intensity as a result of Ar sputtering. Such an effect was most pronounced for low energy (<1 keV) Ar + sputtering and was consistent with TRIDYN simulations of the depth profiling. As a result, the component sputter yields from the ternary alloy were consistent with previous binary alloy measurements but showed greater Cu surface concentrations than expected from TRIDYN simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

140 nm PbTiO 3 /20 nm SrRuO 3 thin-film heterostructures were grown on SrTiO 3 (001) single-crystal substrates via pulsed-laser deposition. In order to study the properties of these films, symmetric SrRuO 3 capacitor structures were fabricated using established techniques and dramatic differences were observed in the leakage characteristics of the heterostructures. The high-pressure O 2 and O 2 /Ar heterostructures reveal more than 2 orders of magnitude higher leakage current densities as compared to the low-pressure O 2 heterostructures. In turn, the high leakage current density of the heterostructures grown in high pressures precludes measurement of closed, saturated ferroelectric hysteresis loops, while nearly-square, fully saturated and closed hysteresis loops can be measured for the low-pressure O 2 heterostructures. The defects responsible for poor transport and ferroelectric properties in PbTiO 3 thin films are identified to be isolated point defects such as Pb 3+ centers and lead vacancies, which contribute to hole conduction. Introduction of bombardment-induced defects is shown to be an effective way to quench these trap states by turning them into deep lying defect complexes and clusters which, in turn, leads to a dramatic reduction of leakage current by up to 5 orders of magnitude and improvement of ferroelectric device performance.

36 MATERIALS SCIENCE↗