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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1985

Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices

Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.

Juang, F.-Y.↗
NASA NTRS2016

Measurements of the Ionization Coefficient of Simulated Iron Micrometeoroids

The interpretation of meteor radar observations has remained an open problem for decades. One of the most critical parameters to establish the size of an incoming meteoroid from radar echoes is the ionization coefficient, beta, which still remains poorly known. Here we report on new experiments to simulate micrometeoroid ablation in laboratory conditions to measure beta for iron particles impacting N2, air,CO2, and He gases. This new data set is compared to previous laboratory data where we find agreement except for He and air impacts greater than 30 kms. We calibrate the Jones model of beta(v) and provide fit parameters to these gases and find agreement with all gases except CO2 and high-speed air impacts where we observe beta(sub air) greater than 1 for velocities greater than 70 kms. These data therefore demonstrate potential problems with using the Jones model for CO2 atmospheres as well as for high-speed meteors on Earth.

Thomas, Evan↗
NASA NTRS2017

Experimental Setup for the Laboratory Investigation of Micrometeoroid Ablation Using a Dust Accelerator

A facility has been developed to simulate the ablation of micrometeoroids in laboratory conditions. An electrostatic dust accelerator is used to generate iron particles with velocities of 10-70 kilometers. The particles are then introduced into a chamber pressurized with a target gas, where the pressure is adjustable between 0.01 and 0.5 Torr, and the particle partially or completely ablates over a short distance. An array of biased electrodes above and below the ablation path is used to collect the generated ions/electrons with a spatial resolution of 2.6 centimeters along the ablating particles path, thus allowing the study of the spatiotemporal evolution of the process. For completely ablated particles, the total collected charge directly yields the ionization coefficient of a given dust material-target gas combination. The first results of this facility measured the ionization coefficient of iron atoms with N2, air, CO2, and He target gases for impact velocities greater than 20 kilometers per second, and are reported by Thomas et al. The ablation chamber is also equipped with four optical ports that allow for the detection of the light emitted by the ablating particle. A multichannel photomultiplier tube system is used to observe the ablation process with a spatial and temporal resolution of 0.64 centimeters and 90 nanoseconds. The preliminary results indicate that it is possible to calculate the velocity of the ablating particle from the optical observations, and in conjunction with the spatially resolved charge measurements allow for experimental validation of ablation models in future studies.

Thomas, Evan↗
NASA NTRS1976

An efficient procedure for computing partial ionization of a gas in numerical fluid dynamics

A numerical procedure is described that allows efficient solution for the three nonlinear and implicit equations of state relating the equilibrium properties of a partially (and singly) ionized neutral gas. In the computation, the values for the intensive variables, that is pressure, temperature and ionization coefficient, are iteratively obtained with a given accuracy starting from assigned values for energy and volume per unit mass. Iterative computation is performed only when the value for the ionization coefficient lies within the lower and the upper bounds fixed by the required number of significant digits; otherwise the two explicit equations of state for nonionized or for fully ionized gases are employed.

Garribba, S.↗
NASA NTRS1981

Exact random walk definition of the collisional-radiative ionization and recombination coefficients

The collisional-radiative ionization and recombination coefficients are shown to be expressible in terms of the 'total probability', from initial level i to final level j, which excludes intermediate returns to the initial level. Applications are made to three-level and four-level systems to illustrate the method of calculation and compare with an approximation currently used.

Kastner, S. O.↗
NASA NTRS2001

Viscosity Coefficient Curve Fits for Ionized Gas Species Grant Palmer

Viscosity coefficient curve fits for neutral gas species are available from many sources. Many do a good job of reproducing experimental and computational chemistry data. The curve fits are usually expressed as a function of temperature only. This is consistent with the governing equations used to derive an expression for the neutral species viscosity coefficient. Ionized species pose a more complicated problem. They are subject to electrostatic as well as intermolecular forces. The electrostatic forces are affected by a shielding phenomenon where electrons shield the electrostatic forces of positively charged ions beyond a certain distance. The viscosity coefficient for an ionized gas species is a function of both temperature and local electron number density. Currently available curve fits for ionized gas species, such as those presented by Gupta/Yos, are a function of temperature only. What they did was to assume an electron number density. The problem is that the electron number density they assumed was unrealistically high. The purpose of this paper is two-fold. First, the proper expression for determining the viscosity coefficient of an ionized species as a function of both temperature and electron number density will be presented. Then curve fit coefficients will be developed using the more realistic assumption of an equilibrium electron number density. The results will be compared against previous curve fits and against highly accurate computational chemistry data.

Palmer, Grant↗
NASA NTRS1971

Avalanche-diode oscillator circuit with tuning at multiple frequencies

Detailed theoretical analysis of three different modes or types of high efficiency oscillation in a PIN diode are presented. For the TRAPATT mode in a PIN diode, it is shown that a traveling avalanche zone is not necessary to generate a dense trapped plasma. An economical computer program for TRAPATT oscillations in a PIN diode is described. Typical results of diode power, dc-to-RF conversion efficiency, and required circuit impedances are presented for several different current waveforms. A semianalytical solution for a second type of high efficiency mode in a PIN diode is derived assuming a rectangular current waveform. A quasi-static approximation is employed to derive a semianalytical solution for the voltage across a PIN diode in a third mode, where avalanching occurs during a major portion of a half cycle. Calculations for this mode indicate that the power increases proportionally to the magnitude of the drive current with a small decrease in efficiency relative to the ordinary TRAPATT mode. An analytical solution is also given for a PIN diode, where it is assumed that the ionization coefficient is a step function. It is shown that the step-ionization approximation permits one to draw possible patterns of avalanche region in the depletion layer as a function of time. A rule governing admissible patterns is derived and an example solution given for one admissible pattern. Preliminary experimental results on the high-efficiency oscillations are presented and discussed. Two different experimental circuits, which used channel-dropping filters to provide independent harmonic tuning, are described. Simpler circuits used to produce high-efficiency oscillations are discussed. Results of experiments using inexpensive Fairchild FD300 diodes are given.

Parker, D.↗
NASA NTRS1987

Tunneling-assisted impact ionization for a superlattice

Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. Multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating were considered. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or to tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.

Chuang, S. L.↗
NASA NTRS1967

Transport coefficients of partially ionized argon.

Properties of partially ionized Ar computed via Chapman-Enskog-Burnett expressions noting ambipolar diffusion coefficient, electron-atom momentum, electrical and thermal conductivity, etc

TRANSPORT COEFFICIENT↗
NASA NTRS2011

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Yuan, Ping↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Characteristics of a high pressure gas proportional counter filled with xenon

The characteristics of a conventional cylindrical geometry proportional counter filled with high pressure xenon gas up to 10 atm. were fundamentally investigated for use as a detector in hard X-ray astronomy. With a 2 percent methane gas mixture the energy resolutions at 10 atm. were 9.8 percent and 7.3 percent for 22 keV and 60 keV X-rays, respectively. From calculations of the Townsend ionization coefficient, it is shown that proportional counters at high pressure operate at weaker reduced electric field than low pressure counters. The characteristics of a parallel grid proportional counter at low pressure showed similar pressure dependence. It is suggested that this is the fundamental reason for the degradation of resolution observed with increasing pressure.

Sakurai, H.↗
NASA NTRS2020

Advanced Silicon Avalanche Photodiodes on NASA's Global Ecosystem Dynamics Investigation (GEDI) Mission

Silicon Avalanche Photodiodes (APDs) are used in NASA’s Global Ecosystem Dynamics Investigation (GEDI) which was launched in December 2018 and is currently measuring the Earth’s vegetation vertical structure from the International Space Station. The APDs were specially made for space lidar with a much lower hole-to-electron ionization coefficient ratio (k-factor ~0.008) than that of commercially available silicon APDs in order to reduce the APD excess noise from the randomness of the avalanche gain. A silicon heater resistor was used under the APD chip to heat the device up to 70°C and improve its quantum efficiency at 1064 nm laser wavelength while maintaining a low dark current such that the overall signal to noise ratio is improved. Special APD protection circuits were used to raise the overload damage threshold to prevent device damage from strong laser return by specular surfaces, such as still water bodies, and space radiation events. The APD and a hybrid transimpedance amplifier circuit were hermetically sealed in a package with a sufficiently low leak rate to ensure multi-year operation lifetime in space. The detector assemblies underwent a series of pre-launch tests per NASA Goddard Environmental Verification Standard for space qualification. They have performed exactly as expected with GEDI in orbit. A detailed description of the GEDI detector design, signal and noise model, and test results are presented in this paper.

Sun, Xiaoli↗