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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Analysis of implant loss risk factors after simultaneous guided bone regeneration: A retrospective study of 5404 dental implants

Abstract Purpose The purpose was to analyze the risk factors for implant loss after simultaneous guided bone regeneration (GBR). Materials and Methods Patients who underwent implant placement with simultaneous GBR between January 2011 and December 2018 were screened for this study. The cumulative survival rate (CSR) was calculated using the life table method. Log‐rank test and Kaplan–Meier survival estimates were used to identify potential risk factors for implant loss. The association between the investigated variables and implant loss was determined using hazard ratios (HRs) obtained from a multivariate Cox regression analysis. Results A total of 3973 patients with 5404 implants were included in this study. The CSRs of the implants at 1, 5, and 10 years were 99.6%, 98.9%, and 98.7%, respectively. Male patient (HR = 2.94, 95% CI: 1.41–6.14), periodontitis (HR = 4.26, 95% CI: 2.05–9.86), tissue‐level implants (HR = 3.02, 95% CI: 1.30–6.98), narrow implants (HR = 2.71, 95% CI: 1.12–6.57), and implant length ≤10 mm (HR = 2.91, 95% CI: 1.41–6.02) significantly increased the risk of implant loss ( p < 0.05). The risk of implant loss was significantly higher in the maxillary posterior region (HR = 2.26, 95% CI: 1.04–4.90) than in the maxillary anterior region ( p < 0.05). Compared to Straumann, Nobel (HR = 4.07, 95% CI: 1.75–9.44) and other implant systems (HR = 14.23, 95% CI: 4.32–46.85) showed a significantly higher risk of implant loss ( p < 0.05). Conclusion Male patient, periodontitis, maxillary posterior region, Nobel implant system, other implant systems, tissue‐level implants, narrow implants, and implant length ≤10 mm were considered risk factors for implant loss after simultaneous GBR.

Shen, Xiaoting↗
DOE OSTI2022

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

4H-SiC↗
DOE OSTI2025

Influence of implantation temperature and He implantation-induced defects on morphological evolution of co-deposited Cu-Mo nanocomposites

Here, we investigate the effect of high-temperature helium (He) implantation on microstructural evolution in physical-vapor-co-deposited nanocomposite thin films of copper (Cu) and molybdenum (Mo). The microstructure morphologies of He-implanted and He-free domains are characterized using transmission electron microscopy and statistical analysis. High implantation temperatures (500°C and 750°C) lead to coarsening of Cu and Mo domains and their eventual reorientation. The microstructure evolution in He-implanted and He-free domains is comparable, indicating that implantation-induced defects do not accelerate the coarsening of the nanocomposite as compared to annealing alone. This observation contrasts with previously reported effects of implantation-induced defects on single-phase nanocrystalline metals, which include enhancement of grain growth by increasing self-diffusivity or its inhibition by pinning of grain boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material

Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe3GeTe2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe3GeTe2 by the amount of 10-3 Ga Å-3 could greatly enhance the Fe3GeTe2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element-resolved X-ray absorption spectroscopy show little changes in the Fe3GeTe2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe3GeTe2 magnetization from out-of-plane direction at low temperature to in-plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature.

Yang, M↗
DOE OSTI2022

Implantable photoelectronic charging (I-PEC) for medical implants

Medical implants with functionalities such as sensing, health monitoring, stimulation, diagnosis, and physiological treatment are rapidly growing. With the increasing functional sophistication and addition of modules such as data transmission, on-chip processing, and data storage, energy demand of the implantable system is also growing. Using implantable energy harvester either to recharge or ultimately replace hazardous battery is essential to provide a long-term sustainable solution. Furthermore, energy harvesting techniques using piezoelectric, thermoelectric, radio frequency power transmission, biofuel, and photoelectronic (or sometimes termed as “photovoltaic” in terms of solar light harvesting, i.e., PV) conversion, have been attempted for the implantable, but these methods are currently limited by insufficient power output, large footprint, and low efficiency. Nevertheless, the planar PV with potential of lighter weight, higher energy density, and higher efficiency, provides promising power solution for in-body medical implants. In this short review, we will discuss the potential opportunities and challenges associated with PV's for medical implants, covering materials, to devices, and to system level requirements.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Expandable implant and implant system

An embodiment of the invention includes an expandable implant to endovascularly embolize an anatomical void or malformation, such as an aneurysm. An embodiment is comprised of a chain or linked sequence of expandable polymer foam elements. Another embodiment includes an elongated length of expandable polymer foam coupled to a backbone. Another embodiment includes a system for endovascular delivery of an expandable implant (e.g., shape memory polymer) to embolize an aneurysm. The system may include a microcatheter, a lumen-reducing collar coupled to the distal tip of the microcatheter, a flexible pushing element detachably coupled to an expandable implant, and a flexible tubular sheath inside of which the compressed implant and pushing element are pre-loaded. Other embodiments are described herein.

Wilson, Thomas S.↗
DOE OSTI2023

Expandable implant and implant system

An embodiment of the invention includes an expandable implant to endovascularly embolize an anatomical void or malformation, such as an aneurysm. An embodiment is comprised of a chain or linked sequence of expandable polymer foam elements. Another embodiment includes an elongated length of expandable polymer foam coupled to a backbone. Another embodiment includes a system for endovascular delivery of an expandable implant (e.g., shape memory polymer) to embolize an aneurysm. The system may include a microcatheter, a lumen-reducing collar coupled to the distal tip of the microcatheter, a flexible pushing element detachably coupled to an expandable implant, and a flexible tubular sheath inside of which the compressed implant and pushing element are pre-loaded. Other embodiments are described herein.

Wilson, Thomas S.↗
DOE OSTI2021

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

Amorphization, ion irradiation, SiC↗
DOE OSTI2020

Mechanoadaptive strain and functional osseointegration of dental implants in rats

Spatiotemporal implant-bone biomechanics and mechanoadaptive strains in peri-implant tissue are poorly understood. Physical and chemical characteristics of an implant-bone complex (IBC) were correlated in three-dimensional space (along the length and around a dental implant) to gather insights into time related integration of the implant with the cortical portion of a jaw bone in a rat. Rats (N = 9) were divided into three experimental groups with three rats per time point; 3-, 11-, and 24-day. All rats were fed crumbled hard pellets mixed with water (soft-food diet) for the first 3 days followed by a hard-food diet with intact hard-food pellets (groups of 11- and 24-day only). Biomechanics of the IBCs harvested from rats at each time point was evaluated by performing mechanical testing in situ in tandem with X-ray imaging. The effect of physical association (contact area) of a loaded implant with adapting peri-implant tissue, and resulting strain within was mapped by using digital volume correlation (DVC) technique. The IBC stiffness at respective time points was correlated with mechanical strain in peri-implant tissue. Results illustrated that IBC stiffness at 11-day was lower than that observed at 3-day. However, at 24-day, IBC stiffness recovered to that which was observed at 3-day. Furthermore, correlative microscopy and spectroscopy illustrated that the lower IBC stiffness was constituted by softer and less mineralized peri-implant tissue that contained varying expressions of osteoconductive elements. Lower IBC stiffness observed at 11-day was constituted by less mineralized peri-implant tissue with osteoconductive elements that included phosphorus (P) which was co-localized with higher expression of zinc (Zn), and lower expression of calcium (Ca). Higher IBC stiffness at 24-day was constituted by mineralized peri-implant tissue with higher expressions of osteoconductive elements including Ca and P, and lower expressions of Zn. These spatiotemporal correlative maps of peri-implant tissue architecture, heterogeneous distribution of mineral density, and elemental colocalization underscore mechanoadaptive physicochemical properties of peri-implant tissue that facilitate functional osseointegration of an implant. These results provided insights into 1) plausible "prescription" of mechanical loads as an osteoinductive "therapeutic dose" to encourage osteoconductive elements in the peri-implant tissue that would facilitate functional osseointegration of the implant; 2) a "critical temporal window" between 3 and 11 days, and perhaps it is this acute phase during which key candidate regenerative molecules can be harnessed to accelerate osseointegration of an implant under load.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low‐fluence, shallow implants in diamond‐like carbon

Rationale Back‐side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near‐surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low‐fluence, shallow features even if matrix effects are a concern. Methods Implanted Na (<2.0 × 10 11 ions/cm 2 , peaking <50 nm) in diamond‐like carbon (DLC) film on silicon (solar wind returned by NASA's Genesis mission) was prepared for measurement as follows. Implanted surfaces of samples were epoxied to wafers and back‐side‐thinned using physical or chemical methods. Thinned samples were then implanted with reference ions for accurate quantification of the solar wind implant. Analyses used a CAMECA IMS 7f‐GEO SIMS in depth‐profiling mode. Results Back‐side‐implanted reference ions reduced the need to change sample mounts or stage position and could be spatially separated from the solar wind implant even when measuring monoisotopic ions. Matrix effects in DLC were mitigated and the need to find an identical piece of DLC for a reference implant was eliminated. Accuracy was only limited by the back‐side technique itself. Conclusions Combining back‐side depth profiling with back‐side‐implanted internal standards aides quantification of shallow mono‐ and polyisotopic implants. This technique helps mitigate matrix effects and keeps measurement conditions consistent. Depth profile acquisition times are longer, but if sample matrices are homogeneous, procedural changes can decrease measurement times.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Ion implantation of magnesium guests into type II silicon clathrate films: an alternate approach to doping a cage-like silicon allotrope

Type II silicon clathrates, with their unique cage-like structure, offer exciting potential for applications in thermoelectrics, photovoltaics, and quantum materials due to their tunable electronic and thermal properties. This study investigates the use of ion implantation to introduce targeted guest atoms, which act as dopants, into type II Si clathrate films. The focus is on Mg as a test case for implantation, a dopant previously unreported in type II Si clathrates. The effects of ion implantation on the metastable Si clathrate structure were examined through systematic investigation of implant parameters. Time-of-flight secondary ion mass spectrometry depth profiling confirmed the successful implantation of Mg, while X-ray diffraction and confocal Raman spectroscopy demonstrated minimal structural damage at lower fluences, with the clathrate framework retaining its integrity without converting to other phases. At the higher end of the fluence range implantation caused localized transitions from clathrate to amorphous silicon. Implant activation using rapid thermal annealing was examined with the clathrate structure stable up to 500 °C and being converted to diamond silicon above this temperature. Post-implantation and activation structural characterization showed evidence of damage reversal. Electron paramagnetic resonance studies provided indirect evidence of dopant incorporation. These findings establish a foundation for introducing alternative guests/dopants into the Si clathrate cages through ion implantation, advancing their tunability for next-generation quantum and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural transition and recovery of Ge implanted β -Ga 2 O 3

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanoscale lattice strains in self-ion implanted tungsten

Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? In this work, we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the microstructural damage caused by ion bombardment, and more generally of strain related phenomena in micro-volumes that are inaccessible via any other technique.

36 MATERIALS SCIENCE↗