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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
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NASA NTRS1987

Advanced development of double-injection, deep-impurity semiconductor switches

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Hanes, M. H.↗
NASA NTRS1985

Double-injection, deep-impurity switch development

The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

Whitson, D. W.↗
NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗
NASA NTRS1980

A new planar injection-gated bulk switching device based upon deep impurity trapping

Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.

Kapoor, A. K.↗
NASA NTRS1980

Effect of sodium, potassium, magnesium, calcium, and chlorine on the high temperature corrosion of IN-100, U-700, IN-792, and Mar M-509

The effects of potential impurities such as Na, K, Mg, Ca, and Cl, in coal-derived liquid fuels on accelerated corrosion of IN-100, U-700, IN-792, and Mar M-509 were investigated using a Mach 0.3 burner rig for times to 200 hours in one hour cycles. These impurities were injected in combination as aqueous solutions into the combustor. Other variables were time, temperature, and fuel-to-air ratio. The experimental matrix was a central composite fractional fractorial design divided into blocks to allow modification of the design as data was gathered. The extent of corrosion was determined by metal consumption. The time exponent was near 1.0 for the least corrosion resistant alloys, U-700 and IN-100; near 0.8 for the moderately resistant IN-792; and close to Mar M-509, the most corrosion resistant alloy. As anticipated, corrosion rapidly increased with increasing temperature as well as Na and K concentrations, while corrosion decreased somewhat as the Ca concentration increased for all alloys. Mg was beneficial for the Ni-base alloys but had little effect on the Co-base alloy. Surprisingly, the effect of increasing Cl was to decrease the corrosion of all alloys. Little interaction among the dopants was noted.

Lowell, C. E.↗
NASA NTRS1981

High temperature alkali corrosion in high velocity gases

The effects of potential impurities in coal derived liquids such as Na, K, Mg, Ca and Cl on the accelerated corrosion of IN-100, U-700, IN-792 and Mar-M509 were investigated using a Mach 0.3 burner rig for times to 1000 hours in one hour cycles. These impurities were injected in combination as aqueous solutions into the combustor of the burner rig. The experimental matrix utilized was designed statistically. The extent of corrosion was determined by metal recession. The metal recession data were fitted by linear regression to a polynomial expression which allows both interpolation and extrapolation of the data. As anticipated, corrosion increased rapidly with Na and K, and a marked maximum in the temperature response was noted for many conditions. In contrast, corrosion decreased somewhat as the Ca, Mg and Cl contents increased. Extensive corrosion was observed at concentrations of Na and K as low as 0.1 PPM at long times.

Lowell, C. E.↗
NASA NTRS1987

High-Voltage Switch Containing (DI)2 Devices

Series switching diodes triggered on by passing above threshold voltage. High-voltage switch made by connecting multitude of deep-impurity, double-injection devices in series with each other and with another, triggerable high-voltage device such as thyristor. Device operates near ground potential to avoid insulation problems in triggering circuit.

Hanes, Maurice H.↗
NASA NTRS1986

Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si

The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.

Singh, R.↗
NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗
NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗
NASA NTRS1988

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗
NASA NTRS1984

Pre-existing seed particles and the onset of condensation in cryogenic wind tunnels

The condensation research at NASA Langley Research Center has used a variety of experimental approaches to gather information on seed particles that can act as sites for condensation growth. Total pressure measurements have suggested that condensation growth is caused by impurities in the flow and not by unevaporated liquid nitrogen (LN2) droplets resulting from the LN2 injected to cool the 0.3-Meter Transonic Cryogenic Tunnel. A separate test with an optical droplet sizing probe, which was designed to detect droplets in the 2- to 300-micron range, confirmed the conclusions from the total pressure measurements and also discovered what appears to be solidified oil droplets having diameters of about 3 microns. These oil droplets appear to be the dominant source of seed particles above 2 microns. However, computer simulations of static pressure test data suggest that the measured condensation effects are the result of more numerous, smaller seeds with number densities on the order of 10 to the 12th per kilogram of the gas and diameters on the order of 0.5 microns.

Hall, R. M.↗
NASA NTRS1981

Study of the effects of impurities on the properties of silicon solar cell

The effect of defects across the back-surface-field junction on the performance of high efficiency and thin solar cells, using a developed-perimeter device model for the three-dimensional defects is investigated. Significant degradation of open-circuit voltage can occur even if there are only a few defects distributed in the bulk of the solar cell. Two features in the thickness dependences of the fill factor and efficiency in impurity-doped back-surface-field solar cells are discovered in the exact numerical solution which are associated with the high injection level effect in the base and not predicted by the low-level analytical theory. What are believed to be the most accurate recombination parameters at the Ti center to date are also given and a theory is developed which is capable of distinguishing an acceptor-like deep level from a donor-like deep level using the measured values of the thermal emission and capture cross sections.

Sah, C. T.↗
NASA NTRS1977

Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

Breneman, W. C.↗
NASA NTRS1989

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Shieh, Tsay-Jiu↗
NASA NTRS1972

Spectroscopic studies of the exhaust plume of a quasi-steady MPD accelerator

Spectroscopic and photographic investigations are reported that reveal a complex azimuthal species structure in the exhaust plume of a quasi-steady argon MPD accelerator. Over a wide range of operating conditions the injected argon remains collimated in discrete jets which are azimuthally in line with the six propellant injector orifices. The regions between these argon jets, including the central core of the exhaust flow, are occupied by impurities such as carbon, hydrogen and oxygen ablated from the Plexiglas back plate of the arc chamber. The features of this plume structure are found to be dependent on the arc current and mass flow rate. It is found that nearly half the observed velocity is attained in an acceleration region well downstream of the region of significant electromagnetic interaction. Recombination calculations show that the ionization energy is essentially frozen.

Bruckner, A. P.↗
NASA NTRS2012

Nanotube Production Devices Expand Research Capabilities

In order for the Hubble Space Telescope to take incredible, never-seen-before shots of celestial bodies and then send them back to Earth, the spacecraft needs power. While in orbit, Hubble cannot plug into an electrical outlet or stop at a store for some batteries. One of the ways NASA supplies power aboard a spacecraft is by harnessing energy from the most powerful entity in the solar system: the Sun. Since the 1960s, photovoltaic technology, or technology that converts sunlight into electricity, has been instrumental in the exploration of space. To build upon existing photovoltaic technology, NASA s Glenn Research Center has worked on a variety of innovative designs and materials to incorporate into photovoltaic cells, the building blocks of solar power systems. One of these materials is the carbon nanotube - a tiny structure about 50,000 times finer than the average human hair, with notably high electrical and thermal conductivity and an extreme amount of mechanical strength. Such properties give carbon nanotubes great potential to enhance the reliability of power generation and storage devices in space and on Earth. Dennis J. Flood, the branch chief of the photovoltaic division at Glenn in the 1990s, was looking into using carbon nanotubes to improve the efficiency of solar cells when he ran into a major roadblock - high-quality carbon nanotubes were not readily available. To address this problem, one of the chemists in Flood s group came up with a process and system for growing them. A senior chemist at Glenn, Aloysius F. Hepp, devised an injection chemical vapor deposition process using a specific organometallic catalyst in a two-zone furnace. Hepp's group found the unique process produced high-quality carbon nanotubes with less than 5 percent metal impurity. In addition, the process was more efficient than existing techniques, as it eliminated pre-patterning of the substrate used for growing the nanotubes, a timely and cost-prohibitive step.

Source record↗
NASA NTRS1977

Impurity gradients and high efficiency solar cells

One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.

Fang, C. R.↗