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12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Interface dependence of band offsets in lattice-matched isovalent heterojunctions

Using a previously developed self-consistent dipole theory, we find that the interface dependence of band offsets for lattice-matched isovalent heterojunction is generally small. Specifically, we find the difference between the (001) and (110) band offsets for the common-anion heterojunctions AlP/GaP, AlAs/GaAs, AlSb/GaSb, and CdTe/HgTe to be, at most, 0.02 eV. An investigation of the various details in the calculations leads to an error estimate of +/-0.03 eV; the differences are therefore insignificant. For the noncommon-anion systems, the difference between two different bonding configurations of the (001) interface is noted. Although the differences between the various interfaces are found to be slightly larger than for the common-anion cases, the only significant difference is found to occur between the In-Sb and Ga-As (001) interfaces, where it is 0.1 eV. In this case, the (110) band offset lies midway between the two.

Lambrecht, Walter R. L.↗
NASA NTRS2006

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Qiu, Yueming↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form a mixture of corner and edge-sharing InSb6 octahedra. The corner-sharing octahedral tilt angles are 0°. All In–Sb bond lengths are 3.07 Å. Sb3- is bonded to six equivalent In3+ atoms to form a mixture of corner and edge-sharing SbIn6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. In3+ is bonded in a bent 150 degrees geometry to two equivalent Sb3- atoms. Both In–Sb bond lengths are 3.18 Å. Sb3- is bonded to two equivalent In3+ and four equivalent Sb3- atoms to form a mixture of edge and corner-sharing SbIn2Sb4 octahedra. The corner-sharing octahedra tilt angles range from 0–29°. There are two shorter (3.04 Å) and two longer (3.14 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form corner-sharing InSb4 tetrahedra. All In–Sb bond lengths are 2.87 Å. Sb3- is bonded to four equivalent In3+ atoms to form corner-sharing SbIn4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. there are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to six Sb3- atoms to form InSb6 octahedra that share corners with two equivalent SbIn5Sb octahedra, corners with four equivalent InSb6 octahedra, edges with four equivalent InSb6 octahedra, and edges with eight equivalent InSb5 trigonal bipyramids. The corner-sharing octahedra tilt angles range from 0–39°. There are a spread of In–Sb bond distances ranging from 3.04–3.30 Å. In the second In3+ site, In3+ is bonded to five Sb3- atoms to form distorted InSb5 trigonal bipyramids that share corners with four equivalent SbIn5Sb octahedra, corners with five equivalent InSb5 trigonal bipyramids, edges with four equivalent InSb6 octahedra, and edges with four equivalent InSb5 trigonal bipyramids. The corner-sharing octahedra tilt angles range from 65–106°. There are a spread of In–Sb bond distances ranging from 3.05–3.22 Å. There are two inequivalent Sb3- sites. In the first Sb3- site, Sb3- is bonded to six In3+ atoms to form a mixture of edge and corner-sharing SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. In the second Sb3- site, Sb3- is bonded to five In3+ and one Sb3- atom to form distorted SbIn5Sb octahedra that share a cornercorner with one InSb6 octahedra, corners with five equivalent SbIn5Sb octahedra, corners with four equivalent InSb5 trigonal bipyramids, and edges with eight SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 9–39°. The Sb–Sb bond length is 2.93 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Halite, Rock Salt-like structured and crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form a mixture of edge and corner-sharing InSb6 octahedra. The corner-sharing octahedra tilt angles range from 0–13°. There are a spread of In–Sb bond distances ranging from 3.06–3.09 Å. Sb3- is bonded to six equivalent In3+ atoms to form a mixture of edge and corner-sharing SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 0–13°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is beta-prime cadmium gold structured and crystallizes in the orthorhombic Pmmn space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form a mixture of distorted corner and edge-sharing InSb4 trigonal pyramids. There are two shorter (3.09 Å) and two longer (3.10 Å) In–Sb bond lengths. Sb3- is bonded in a 6-coordinate geometry to four equivalent In3+ and two equivalent Sb3- atoms. Both Sb–Sb bond lengths are 3.22 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb crystallizes in the monoclinic Cm space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form distorted InSb6 octahedra that share corners with twelve equivalent SbIn6Sb2 hexagonal bipyramids, corners with six equivalent InSb6 octahedra, and edges with twelve equivalent InSb6 octahedra. The corner-sharing octahedra tilt angles range from 5–6°. There are a spread of In–Sb bond distances ranging from 3.08–3.42 Å. Sb3- is bonded to six equivalent In3+ and two equivalent Sb3- atoms to form distorted SbIn6Sb2 hexagonal bipyramids that share corners with eight equivalent SbIn6Sb2 hexagonal bipyramids, corners with twelve equivalent InSb6 octahedra, and edges with twelve equivalent SbIn6Sb2 hexagonal bipyramids. The corner-sharing octahedra tilt angles range from 59–121°. Both Sb–Sb bond lengths are 3.16 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb3 by Materials Project

InSb3 is alpha bismuth trifluoride structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. In3+ is bonded in a body-centered cubic geometry to eight equivalent Sb1- atoms. All In–Sb bond lengths are 3.29 Å. There are two inequivalent Sb1- sites. In the first Sb1- site, Sb1- is bonded in a body-centered cubic geometry to four equivalent In3+ and four equivalent Sb1- atoms. All Sb–Sb bond lengths are 3.29 Å. In the second Sb1- site, Sb1- is bonded in a body-centered cubic geometry to eight equivalent Sb1- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form corner-sharing InSb4 tetrahedra. There are three shorter (2.87 Å) and one longer (2.89 Å) In–Sb bond lengths. Sb3- is bonded to four equivalent In3+ atoms to form corner-sharing SbIn4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on In3Sb by Materials Project

In3Sb is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In1+ is bonded in a square co-planar geometry to four equivalent Sb3- atoms. All In–Sb bond lengths are 3.42 Å. Sb3- is bonded to twelve equivalent In1+ atoms to form a mixture of face and corner-sharing SbIn12 cuboctahedra.

36 MATERIALS SCIENCE↗