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4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on In2Se by Materials Project

In2Se crystallizes in the orthorhombic Pnnm space group. The structure is three-dimensional. there are four inequivalent In1+ sites. In the first In1+ site, In1+ is bonded in an L-shaped geometry to two equivalent Se2- atoms. Both In–Se bond lengths are 2.97 Å. In the second In1+ site, In1+ is bonded in a distorted T-shaped geometry to three Se2- atoms. There are one shorter (2.81 Å) and two longer (2.99 Å) In–Se bond lengths. In the third In1+ site, In1+ is bonded in a distorted T-shaped geometry to three Se2- atoms. There are one shorter (2.83 Å) and two longer (2.88 Å) In–Se bond lengths. In the fourth In1+ site, In1+ is bonded in a T-shaped geometry to three Se2- atoms. There are a spread of In–Se bond distances ranging from 2.90–3.05 Å. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to six In1+ atoms to form SeIn6 octahedra that share corners with two equivalent SeIn5 trigonal bipyramids, edges with two equivalent SeIn6 octahedra, and edges with two equivalent SeIn5 trigonal bipyramids. In the second Se2- site, Se2- is bonded to five In1+ atoms to form SeIn5 trigonal bipyramids that share corners with two equivalent SeIn6 octahedra, corners with two equivalent SeIn5 trigonal bipyramids, edges with two equivalent SeIn6 octahedra, and an edgeedge with one SeIn5 trigonal bipyramid. The corner-sharing octahedra tilt angles range from 14–74°.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Partial Pressures of In-Se from Optical Absorbance of the Vapor

The optical absorbance of the vapor phase over various In-Se compositions between 33.3 and 61 atomic percent and 673 and 1418K has been measured and used to obtain the partial pressures of Se2(g) and In2Se(g). The results are in agreement with silica Bourdon gage measurements for compositions between 50 and 61 atomic percent but significantly higher than those from Knudsen cell and simultaneous Torsion-Knudsen cell measurements. The sequiselenide is found to sublime incongruently. Congruent vaporization occurs for the liquid above 1000 K between 50.08 and 56 at. percent Se. The Gibbs energy of formation of the liquid from its pure liquid elements between 1000 and 1300K is essentially independent of temperature and falls between -36 and -38 kJ per gram atomic weight for 50 and 56 percent Se at 1200 and 1300K.

Brebrick, R. F.↗
NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗
NASA NTRS2001

Partial Pressures for Several In-Se Compositions from Optical Absorbance of the Vapor

The optical absorbance of the vapor phase over various In-Se compositions between 33.3-60.99 at.% Se and 673-1418 K was measured and used to obtain the partial pressures of Se2(g) and In2Se(g). The results are in agreement with silica Bourdon gauge measurements for compositions between 50-61 at.%, but significantly higher than those from Knudsen cell and simultaneous Knudsen-torsion cell measurements. It is found that 60.99 at.% Se lies outside the sesquiselenide homogeneity range and 59.98 at.% Se lies inside and is the congruently melting composition. The Gibbs energy of formation of the liquid from its pure liquid elements between 1000-1300 K is essentially independent of temperature and falls between -36 to -38 kJ per g atomic weight for 50 and 56% Se at 1200 and 1300 K.

Brebrick, R. F.↗