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Interface sputter damage effects were measured for Sn-doped (approximately 2x10 to the 17th power/cu cm) 100 oriented GaAs. The sputter surfaces were characterized by Auger and X-ray photoelectron spectroscopy. Gold contacts were then deposited in situ on these characterized surfaces. Results of I-V and C-V measurements are shown in graphs.
The effects of sputtering n-type (100)GaAs with 1 to 5 keV argon ions have been studied in ultrahigh vacuum. Auger electron and X-ray photoelectron spectroscopies have been used to characterize the surface before and after sputtering. Gold Schottky contacts were prepared in situ to avoid contamination at the metal/semiconductor interface. The data show that sputtering depletes the surface in As, and the extent of depletion increased as the ion energy was increased. However, angular-resolved photoelectron data showed As was enriched on the outer atom layer by 5 keV but depleted by 1 keV Ar(+) sputtering. Current and capacitance versus voltage data showed that sputtering always lowered the Schottky barrier height and generally increased the ideality factor. However, the barrier height after 3 keV sputtering was higher than after 1 keV sputtering. Those effects are explained based on a combined effective work function model and creation of a donorlike surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.
Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.
OVERGRID and OVERFLOW-2 feature easy to use multiple-body dynamics. The new features of OVERGRID include a preliminary chemistry interface, standard atmosphere and mass properties calculators, a simple unsteady solution viewer, and a debris tracking interface. Script library development in Chimera Grid Tools has applications in turbopump grid generation. This viewgraph presentation profiles multiple component dynamics, validation test cases for a sphere, cylinder, and oscillating airfoil, and debris analysis.
The interface between two immiscible liquids with immobilized photosynthetic pigments can serve as the simplest model of a biological membrane convenient for the investigation of photoprocesses accompanied by spatial separation of charges. As it follows from thermodynamics, if the resolvation energies of substrates and products are very different, the interface between two immiscible liquids may act as a catalyst. Theoretical aspects of charge transfer reactions at oil/water interfaces are discussed. Conditions under which the free energy of activation of the interfacial reaction of electron transfer decreases are established. The activation energy of electron transfer depends on the charges of the reactants and dielectric permittivity of the non-aqueous phase. This can be useful when choosing a pair of immiscible solvents to decrease the activation energy of the reaction in question or to inhibit an undesired process. Experimental interfacial catalytic systems are discussed. Amphiphilic molecules such as chlorophyll or porphyrins were studied as catalysts of electron transfer reactions at the oil/water interface.
Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.
The volume examines the scientific interfaces and technological applications of physics. Twelve areas are dealt with: biological physics-biophysics, the brain, and theoretical biology; the physics-chemistry interface-instrumentation, surfaces, neutron and synchrotron radiation, polymers, organic electronic materials; materials science; geophysics-tectonics, the atmosphere and oceans, planets, drilling and seismic exploration, and remote sensing; computational physics-complex systems and applications in basic research; mathematics-field theory and chaos; microelectronics-integrated circuits, miniaturization, future trends; optical information technologies-fiber optics and photonics; instrumentation; physics applications to energy needs and the environment; national security-devices, weapons, and arms control; medical physics-radiology, ultrasonics, MNR, and photonics. An executive summary and many chapters contain recommendations regarding funding, education, industry participation, small-group university research and large facility programs, government agency programs, and computer database needs.
The charactertistics and performance capability of the current Viking '75 Gas Chromatograph/Mass Spectrometer Instrument are reviewed and documented for the purpose of possible integration with a wet chemistry instrument. Interface, high mass discrimination, and vacuum requirements were determined in a simulated flight investigation. Suggestions for future investigations, tradeoff studies, and design modifications are presented, along with the results of column bleed measurements. A preliminary design of an integrated Wet Chemistry/Mass Spectrometer instrument for amino acid analysis is shown, including estimates of additional weight, volume, and power requirements.
A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.
Our research is in the area of solid-state organic chemistry, which lies at the interface between physical organic chemistry and materials science. We use crystalline solids as models to probe fundamental issues about physical processes, molecular interactions and chemical reactions that are important for fabrication, stabilization and application of technological materials. Much of our most recent work has focused on the phenomena of ferroelastic and ferroelectric domain switching, in which application of an external force or electric field to a crystal causes the molecules inside the crystal to reorient, in tandem, to a new orientational state. To better understand and control the domain switching process, we have designed and synthesized over twenty closely related, ferroelastic organic crystals. Our approach has been to use crystalline inclusion compounds, in which one molecule (the guest) is trapped within the crystalline framework of a second molecule (the host). By keeping the host constant and varying the proportions and kinds of guests, it has been possible to tailor these materials so that domain switching is rapid and reversible (which is desirable for high technology applications). Inclusion compounds therefore serve as powerful systems for understanding the specific molecular mechanisms that control domain switching.
Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)
It is proposed that, contrary to the widely accepted Oparin thesis, life on earth arose not in the oceans but in the earth's atmosphere. Difficulties of the Oparin thesis relating to the nonbiological nature of prebiotic evolution are discussed, and autotrophic, photosynthetic cells are proposed as the first living organisms to emerge, thus avoiding these difficulties. Recent developments in the geology of the earth at the time of the emergence of life are interpreted as requiring the absence of liquid surface water, with water partitioned between a molten crust and a dense, CO2-rich atmosphere, similar to the present state of Venus. Biochemistry in such an atmosphere would be primarily membrane chemistry on the interfaces of atmospheric salt water droplets, proceeding at normal temperatures without the absorption of electrical discharges or UV light. Areas not sufficiently accounted for by this scenario include the development of genetic organization and the breaking of the runaway greenhouse condition assumed.
The present volume broadly considers topics in composite fracture toughness and impact behavior characterization, composite system constituent properties and their interrelationships, and matrix systems' synthesis and characterization. Attention is given to the characterization of interlaminar crack growth in composites by means of the double cantilever beam specimen, the characterization of delamination resistance in toughened resin composites, the effect of impact damage and open holes on the compressive strength of tough resin/high strain fiber laminates, the effect of matrix and fiber properties on compression failure mechanisms and impact resistance, the relation of toughened neat resin properties to advanced composite mechanical properties, and constituent and composite properties' relationships in thermosetting matrices. Also treated are the effect of cross-link density on the toughening mechanism of elastomer-modified epoxies, the chemistry of fiber/resin interfaces, novel carbon fibers and their properties, the development of a heterogeneous laminating resin, solvent-resistant thermoplastics, NASA Lewis research in advanced composites, and opportunities for the application of composites in commercial aircraft transport structures.
A three dimensional, finite rate chemistry, Navier-Stokes code was extended to a multi-block code with mismatched interface for practical calculations of supersonic combustors. To ensure global conservation, a conservative algorithm was used for the treatment of mismatched interfaces. The extended code was checked against one test case, i.e., a generic supersonic combustor with transverse fuel injection, examining solution accuracy, convergence, and local mass flux error. After testing, the code was used to simulate the chemically reacting flow fields in a scramjet combustor with parallel fuel injectors (unswept and swept ramps). Computational results were compared with experimental shadowgraph and pressure measurements. Fuel-air mixing characteristics of the unswept and swept ramps were compared and investigated.
Organic chemicals, when present in extraterrestrial samples, afford precious insight into past and modern conditions elsewhere in the Solar System . No single technology identifies all molecular components because naturally occurring molecules have different chemistries (e.g., polar vs. non-polar, low to high molecular weight) and interface with the ambient sample chemistry in a variety of modes (i.e., organics may be bonded, absorbed or trapped by minerals, liquids, gases, or other organics). More than 90% of organic matter in most natural samples on Earth and in meteorites is composed of complex macromolecules (e.g. biopolymers, complex biomolecules, humic substances, kerogen) because the processes that tend to break down organic molecules also tend towards complexation of the more recalcitrant components. Thus, methodologies that tap the molecular information contained within macromolecules may be critical to detecting extraterrestrial organic matter and assessing the sources and processes influencing its nature.
The Framework for 0-D Atmospheric Modeling(F0AM) is a flexible and user-friendly MATLAB-based platform for simulation of atmospheric chemistry systems. The F0AM interface incorporates front-end configuration of observational constraints and model setups, making it readily adaptable to simulation of photochemical chambers, Lagrangian plumes, and steady-state or time-evolving solar cycles. Six different chemical mechanisms and three options for calculation of photolysis frequencies are currently available. Example simulations are presented to illustrate model capabilities and, more generally, highlight some of the advantages and challenges of 0-D box modeling.
Chemical aspects of evolution of terrestrial atmosphere, noting role of photolysis in oxygen production
Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.