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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Measured Interfacial Residual Strains Produced by In-Flight Ice

The formation of ice on aircraft is a highly dynamic process during which ice will expand and contract upon freezing and undergoing changes in temperature. Finite Element Analysis (FEA) simulations were performed investigating the stress build up in a simplified case with uniform temperature changes between an idealized ice sample and acrylic substrate. These results were used to place strain gages on custom-built acrylic and aluminum specimens; these specimens were then placed in icing conditions such that ice was grown on top of the specimen. Tee rosettes were placed in two configurations adjacent to thermocouple sensors. It was hypothesized that the ice would expand on freezing and contract as the temperature of the interface returned to the equilibrium conditions. While results from the aluminum specimens matched this hypothesis, results from the acrylic specimens show a short period of contraction followed by a much larger expansion at the interface, indicating more complex ice growth thermodynamics than anticipated. Samples were observed to delaminate, and the data suggests that the residual strain is significant to the shedding of ice for in-flight applications.

residual strain↗
NASA NTRS1985

Study of the kinetics and mechanism of the thermal nitridation of SiO2

X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiO(x)N(y)/Si interface is initially at the interface, but moves 20-25 A away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.

Vasquez, R. P.↗
NASA NTRS1986

Distribution of nitrogen and defects in SiO(x)N(y)/Si structures formed by the thermal nitridation of SiO2/Si

Previously reported nitrogen distributions in SiO2 films on Si which have been thermally nitrided at 1000 C have been explained by a kinetic model of the nitridation process which rests upon the effects of interfacial strain. A critical test of this kinetic model is the validity of the predictions regarding nitrogen distributions obtained at other nitridation temperatures. In this work, nitrogen distributions determined via X-ray photoelectron spectroscopy are reported for samples nitrided at 800 and 1150 C, and are shown to be consistent with the kinetic model. In addition, the intensity of a fluorine marker is found to correlate with the nitrogen distribution, and is postulated to be related to kinetically generated defects in the dielectric film, consistent with the strain-dependent energy of formation of defects proposed recently to explain electrical data.

Vasquez, R. P.↗
NASA NTRS1986

An X-ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si

The dependence of the nitrogen distribution in thermally nitrided SiO2 films on the nitridation time and temperature has been studied by means of X-ray photoelectron spectroscopy (XPS). The photoelectron peak intensities were measured by fitting Voigt profiles to the XPS spectra and were used to calculate the film composition as a function of film depth, applying an analytical method described in detail. The times of appearance of the maxima in interfacial nitrogen concentration are shown for 800, 1000, and 1150 C, and the data are related to a kinetic model of Vasquez and Madhukar (1985), which considers the effect of interfacial strain on the nitridation kinetics. In addition, the intensity of a fluorine marker (from the HF used in the etching step) was found to correlate with the nitrogen concentration. It is postulated that the F bonds preferentially to defects. This hypothesis and the measured F intensities are consistent with the proposed strain-dependent energy of defect formation.

Vasquez, R. P.↗
NASA NTRS1986

A kinetic model for the thermal nitridation of SiO2/Si

To explain the observed nitrogen distributions in thermally nitridated SiO2 films, a kinetic model is proposed in which the nitridation process is simulated, using the first-order chemical kinetics and Arrhenius dependence of the diffusion and reaction rates on temperature. The calculations show that initially, as the substrate reacts with diffusing nitrogen, a nitrogen-rich oxynitride forms at the SiO2-Si interface, while at nitridation temperatures above 1000 C, an oxygen-rich oxynitride subsequently forms at the interface, due to reaction of the substrate with an increasingly concentrated oxygen displaced by the slower nitridation of the SiO2. This sequence of events results in a nitrogen distribution in which the peak of the interfacial nitrogen concentration occurs away from the interface. The results are compared with the observed nitrogen distribution. The calculated results have correctly predicted the positions of the interfacial nitrogen peaks at the temperatures of 800, 1000, and 1150 C. To account for the observed width of the interfacial nitrogen distribution, it was found necessary to include in the simulations the effect of interfacial strain.

Vasquez, R. P.↗
NASA NTRS1992

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

George, T.↗
NASA NTRSDate not supplied

The Measurement of Shear Strain in Impact Ice Using a Modified Lap Joint Test and Digital Image Correlation

The results of ice adhesion testing efforts are typically quantified using the maximum shear stress sustained at the interface before the ice detaches from the underlying substrate. While this singular value can be useful for understanding the role icing wind tunnel conditions and substrate surface properties have on the strength of the ice-substrate interface, it does not capture the mechanical behavior of the ice during an experiment. To better understand the deformation of the ice sample and ice-substrate interface during testing, digital image correlation was applied to the lap-joint shear test methodology utilized at NASA Glenn Research Center. Preparation of the sample surface for digital image correlation, initial parsing of the correlation data, and the time synchronization of data from multiple sources are discussed. Using the directional components of deformation measured via digital image correlation, a novel approach to calculating the interfacial shear strain is presented. Results from analyzing several impact ice samples consistently reveals a non-linear response in the ice during mechanical loading which occurs prior to sample delamination, a behavior not observable in the force and displacement data gathered from the testing apparatus. Both the full and small angle forms of the engineering shear strain are evaluated, with the full shear strain form providing considerably lower noise levels. The transition of sample response from near the interface to the bulk behavior of the ice under shear loading is discussed with results from several samples being presented.

Ice adhesion↗
NASA NTRSDate not supplied

The Measurement of Shear Strain in Impact Ice Using a Modified Lap Joint Test and Digital Image Correlation

The results of ice adhesion testing efforts are typically quantified using the maximum shear stress sustained at the interface before the ice detaches from the underlying substrate. While this singular value can be useful for understanding the role icing wind tunnel conditions and substrate surface properties have on the strength of the ice-substrate interface, it does not capture the mechanical behavior of the ice during an experiment. To better understand the deformation of the ice sample and ice-substrate interface during testing, digital image correlation was applied to the lap-joint shear test methodology utilized at NASA Glenn Research Center. Preparation of the sample surface for digital image correlation, initial parsing of the correlation data, and the time synchronization of data from multiple sources are discussed. Using the directional components of deformation measured via digital image correlation, a novel approach to calculating the interfacial shear strain is presented. Results from analyzing several impact ice samples consistently reveals a non-linear response in the ice during mechanical loading which occurs prior to sample delamination, a behavior not observable in the force and displacement data gathered from the testing apparatus. Both the full and small angle forms of the engineering shear strain are evaluated, with the full shear strain form providing considerably lower noise levels. The transition of sample response from near the interface to the bulk behavior of the ice under shear loading is discussed with results from several samples being presented.

: Ice Adhesion, Digital Image Correlation, Experim↗
NASA NTRS1998

Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

Zhu, Dongming↗
NASA NTRS2003

Ceramic Strain Gages for Use at Temperatures up to 1500 Celsius

Indium-tin-oxide (ITO) thin film strain gages were successfully demonstrated at temperatures beyond 1500 C. High temperature static strain tests revealed that the piezoresistive response and electrical stability of the ceramic sensors depended on the thickness of the ITO films comprising the active strain elements. When 2.5 microns-thick ITO films were employed as the active strain elements, the piezoresistive response became unstable at temperatures above 1225 C. In contrast to this, ceramic sensors prepared with 5 microns-thick ITO were stable beyond 1430 C and sensors prepared with 8 microns-thick ITO survived more than 20 hr of operation at 1481 C. Very thick (10 microns) ITo strain gages were extremely stable and responsive at 1528 C. ESCA depth profiles confirmed that an interfacial reaction between the ITO strain gage and alumina substrate was responsible for the high temperature electrical stability observed. Similar improvements in high temperature stability were achieved by doping the active ITO strain elements with aluminum. Several Sic-Sic CMC constant strain beams were instrumented with ITO strain gages and delivered to NASA for testing. Due to the extreme surface roughness of the CMC substrates, new lithography techniques and surface preparation methods were developed. These techniques relied heavily on a combination of Sic and A12O3 cement layers to provide the necessary surface finish for efficient pattern transfer. Micro-contact printing using soft lithography and PDMS stamps was also used to successfully transfer the thin film strain gage patterns to the resist coated CMC substrates. This latter approach has considerable potential for transferring the thin film strain gage patterns to the extremely rough surfaces associated with the CMC's.

Gregory, Otto↗
NASA NTRS1999

Fiber Effects on Minicomposite Mechanical Properties for Several Silicon Carbide Fiber: Chemically Vapor-Infiltrated Silicon Carbide Matrix Systems

Several different types of SiC fiber tows were coated with BN and composited using chemically vapor-infiltrated SiC to form single-tow minicomposites. The types of SiC fiber included Nicalon(sup TM), Hi-Nicalon(sup TM), and the new Sylramic(sup TM) polycrystalline SiC fiber. The interfacial shear stresses were determined from unload-reload tensile hysteresis-loop tests. The ultimate stress and strain properties also were determined for the minicomposites. The ultimate strengths of the newer Hi-Nicalon and Sylramic fibers were superior to that of Nicalon minicomposites with similar fiber volume fractions. The Sylramic minicomposites had the lowest strain to failure and highest interfacial shear strength, respectively, because of the high modulus of the fiber and the rough surface of this fiber type. The apparent interfacial shear strength increased as the stress increased for the Sylramic minicomposites, which also was attributed to the surface roughness of this fiber.

Morscher, Gregory N.↗
NASA NTRS1997

An Efficient Implementation of the GMC Micromechanics Model for Multi-Phased Materials with Complex Microstructures

An efficient implementation of the generalized method of cells micromechanics model is presented that allows analysis of periodic unidirectional composites characterized by repeating unit cells containing thousands of subcells. The original formulation, given in terms of Hill's strain concentration matrices that relate average subcell strains to the macroscopic strains, is reformulated in terms of the interfacial subcell tractions as the basic unknowns. This is accomplished by expressing the displacement continuity equations in terms of the stresses and then imposing the traction continuity conditions directly. The result is a mixed formulation wherein the unknown interfacial subcell traction components are related to the macroscopic strain components. Because the stress field throughout the repeating unit cell is piece-wise uniform, the imposition of traction continuity conditions directly in the displacement continuity equations, expressed in terms of stresses, substantially reduces the number of unknown subcell traction (and stress) components, and thus the size of the system of equations that must be solved. Further reduction in the size of the system of continuity equations is obtained by separating the normal and shear traction equations in those instances where the individual subcells are, at most, orthotropic. The reformulated version facilitates detailed analysis of the impact of the fiber cross-section geometry and arrangement on the response of multi-phased unidirectional composites with and without evolving damage. Comparison of execution times obtained with the original and reformulated versions of the generalized method of cells demonstrates the new version's efficiency.

Pindera, Marek-Jerzy↗
NASA NTRS1993

Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

Jain, Raj K.↗
NASA NTRS1990

Mechanical behaviors of ceramic matrix composites with matrix cracking and fiber debonding

The purpose of this paper is to summarize the current research of the authors on the mechanical behaviors of ceramic matrix composites, including (1) the stress distributions in a composite with matrix cracking and interfacial debonding, (2) the critical strain for matrix cracking, and (3) the effects of fiber/matrix debonding and thermal residual stresses on the critical strain. The stress fields in both bonded and debonded regions are evaluated by taking into account thermal effects. An energy balance approach is followed to determine the critical strain for matrix cracking. From the general equation of the critical strain for matrix cracking, close form solutions have been obtained for two limiting cases: perfect bonding and complete debonding. Numerical solutions are given for the cases of partial fiber debonding and nonzero debonding energy. It is found that thermal residual stresses and the debonding energy have significant effects on the critical strain.

Kuo, Wen-Shyong↗
NASA NTRS2000

A Study of Influencing Factors on the Tensile Response of a Titanium Matrix Composite With Weak Interfacial Bonding

The generalized method of cells micromechanics model is utilized to analyze the tensile stress-strain response of a representative titanium matrix composite with weak interfacial bonding. The fiber/matrix interface is modeled through application of a displacement discontinuity between the fiber and matrix once a critical debonding stress has been exceeded. Unidirectional composites with loading parallel and perpendicular to the fibers are examined, as well as a cross-ply laminate. For each of the laminates studied, analytically obtained results are compared to experimental data. The application of residual stresses through a cool-down process was found to have a significant effect on the tensile response. For the unidirectional laminate with loading applied perpendicular to the fibers, fiber packing and fiber shape were shown to have a significant effect on the predicted tensile response. Furthermore, the interface was characterized through the use of semi-emperical parameters including an interfacial compliance and a "debond stress;" defined as the stress level across the interface which activates fiber/matrix debonding. The results in this paper demonstrate that if architectural factors are correctly accounted for and the interface is appropriately characterized, the macro-level composite behavior can be correctly predicted without modifying any of the fiber or matrix constituent properties.

Goldberg, Robert K.↗
NASA NTRS1980

XPS studies of structure-induced radiation effects at the Si/SiO2 interface

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Grunthaner, F. J.↗
NASA NTRS2004

Fracture Mechanics Analysis of an Annular Crack in a Three-concentric-cylinder Composite Model

A boundary-value problem governing a three-phase concentric-cylinder model was analytically modeled to analyze annular interfacial crack problems with Love s strain functions in order to find the stress intensity factors (SIFs) and strain energy release rates (SERRs) at the tips of an interface crack in a nonhomogeneous medium. The complex form of a singular integral equation (SIE) of the second kind was formulated using Bessel s functions in the Fourier domain, and the SIF and total SERR were calculated using Jacoby polynomials. For the validity of the SIF equations to be established, the SIE of the three-concentric-cylinder model was reduced to the SIE for a two-concentric-cylinder model, and the results were compared with the previous results of Erdogan. A preliminary set of parametric studies was carried out to show the effect of interphase properties on the SERR. The method presented here provides insight about the effect of interphase properties on the crack driving force.

Kuguoglu, Latife H.↗