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Results for “Ion beam etching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage

We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 deg. and 30 deg. , at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k{Omega} junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Physical patterning of high-Q superconducting niobium resonators via ion beam etching

The development of superconducting quantum circuits increasingly involves the exploration of chemically distinct materials and complex multilayered structures. Accelerating this trend may benefit from low-damage, materials-agnostic patterning techniques that are compatible with a broad range of materials. Here, in this work, we investigate the utility of low-energy ion beam etching (IBE), a physical patterning technique, as an alternative to reactive ion etching for fabricating low-loss superconducting resonators. We use niobium (Nb) resonators as a test platform, leveraging their well-characterized performance metrics for benchmarking. To address IBE-induced surface redeposition, we introduce an in situ aluminum capping layer combined with targeted post-fabrication chemical treatment. This strategy yields resonators with internal quality factors as high as 6 × 10 5 in the single-photon regime at 50 mK. These results establish low-energy IBE as a promising patterning technique for superconducting devices, with the potential to accelerate development across chemically diverse and multilayered material platforms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe 2 relative to standard ion milling. The etching process utilizes the XeF 2 precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe 2 with doses 5× lower than standard He + milling. This enables the formation of high‐resolution WSe 2 nanoribbons with dimensions less than 10 nm. The WSe 2 nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He + milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe 2 .

Stanford, Michael G.↗
DOE OSTI2013

Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Laser-assisted focused He + ion beam induced etching with and without XeF 2 gas assist

Focused helium ion (He + ) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF 2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He + induced nanopatterning techniques improve material removal rate, in comparison to standard He + sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He + probe as a nanopattering tool.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Development of hard masks for reactive ion beam angled etching of diamond

Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Studying the Formation of Antireflection Coatings on Multijunction Solar Cells

The formation of antireflection coating on multijunction solar cells based on A{sub 3}B{sub 5} semiconductor heterostructures has been studied at the stage of structure surface processing by methods of plasmachemical, wet chemical, and ion-beam etching. A technology of creating antireflection coatings based on TiO{sub x}/SiO{sub 2} layers is developed. The obtained coatings are characterized by improved adhesion to the surface of heterostructure and reduced reflection coefficient of multijunction solar cells.

14 SOLAR ENERGY↗
DOE OSTI2011

Glancing angle deposition of Ge nanorod arrays on Si patterned substrates

A periodic arrangement of Ge nanorods on a Si(111) substrate was realized by glancing angle deposition (GLAD) onto honeycomb-like arranged Au hillocks formed using a self-assembled monolayer of polystyrene nanospheres as an evaporation mask. Additionally, a honeycomb-like arrangement of Au dots was used as an etch mask in a reactive ion beam etching process for pattern transfer procedure. Resulting honeycomb patterns consisting of Si hillocks within the Si(111) substrates were utilized to deposit Ge nanorods. Effective morphological variations in shape and dimension of GLAD-grown nanorods on honeycomb-like patterned substrates with both Au dot and Si dot arrays are strongly influenced by interseed distances, seed heights, and consequently shadowing lengths. For a large pattern period, it was observed that the usual triangular shape of the nanorod changed to a hexagonal shape as an effect of additional particle flux that reached the growing nanorod from the direction of second and third-nearest neighbors due to inadequate shadowing lengths and increased interseed condensation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Resistance Anomalies at Superconducting Transition in Multilayer N/S/F/S/N Heterostructures

We have prepared lateral N/S/F/S/N heterostructures from perovskite bilayer YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO (70 nm), as superconductor S) and La{sub 1−x}Sr{sub x}MnO{sub 3} (LSMO (30 nm), as ferromagnet F) covered ex situ by Au layer (normal metal N, 50 nm) and Ti layer (50 nm). Whereas the Ti layer serves as a mask at Ar{sup +} ion beam etching, the gold layer protects the properties of bilayer LSMO/YBCO during the fabrication process mainly during Ga{sup +} focused ion beam etching. In many cases, the resistance vs. temperature (R(T)) dependences of the heterostructures exhibited some peculiarities (resistance peaks and dips) at superconducting transition. To explain these anomalies, we used transport effects emerging between resistances of individual layers and resistances of their interfaces. Our simulations fit very well the experimental R(T) dependences of N/S/F/S/N heterostructures and show that transport effects can play an important role in multilayer structures which can be used in spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ion beam mill etch depth monitoring with nanometer-scale resolution

A method for measuring conductance of a material real-time during etching/milling includes providing a fixture having a socket for receiving the material. The socket is attached to a printed circuit board (PCB) mounted on one side of a plate that has at least one opening for providing ion beam access to the material sample. Conductive probes extend from the other side of the PCB to contact and span a target area of the material. A measurement circuit in electrical communication with the probes measures the voltage produced when a current is applied across the material sample to measure changes in electrical properties of the sample over time.

Cybart, Shane A.↗
DOE OSTI2016

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicity induced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Enhanced spin pumping at yttrium iron garnet/Au interfaces

Spin injection across the ferrimagnetic insulator yttrium iron garnet (YIG)/normal metal Au interface was studied using ferromagnetic resonance. The spin mixing conductance was determined by comparing the Gilbert damping parameter {alpha} in YIG/Au and YIG/Au/Fe heterostructures. The main purpose of this study was to correlate the spin pumping efficiency with chemical modifications of the YIG film surface using in situ etching and deposition techniques. By means of Ar{sup +} ion beam etching, one is able to increase the spin mixing conductance at the YIG/Au interface by a factor of 5 compared to the untreated YIG/Au interface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasmonic circular polarization analyzer formed by unidirectionally controlling surface plasmon propagation

Analyzing the polarization of a circularly polarized light is a critical issue. We have fabricated a spiral nano-structure on the Au film by using focused ion beam etching technique. The fabricated structure can be used as a plasmonic circular polarization analyzer. By designing the relative orientation of two nano-apertures in the spiral structural unit, the propagation direction of the surface plasmon polaritons excited by circularly polarized light of opposite handedness can be controlled. Therefore, the spiral structure could be used to accurately determine the helicity of the excited circularly polarized light. Based on the results of scanning near-field optical microscopy, the obtained circular polarization extinction ratio of this structure was above 500. This structure can be used for a flexible detecting size and a very wide spectrum.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Improved control of electron computer-generated holographic grating groove profiles using ion beam gas-assisted etching

In a transmission electron microscope, electrons are described by matter-waves with wavelengths five orders of magnitude smaller than optical electromagnetic waves. Analogous to optical holography, electron wavefronts can be shaped using nanoscale holographic gratings. Here we demonstrate a novel, scalable nanofabrication method for creating off-axis holographic gratings that demonstrate near ideal diffraction efficiencies for binary, sinusoidal, and blazed grating groove profiles. We show that this method can produce up to 50 µm diameter area gratings that diffract up to 68% of the transmitted electron wave into a desired diffraction order with less than 7% into any other order. Additionally, we find that the amount of inelastically scattered electrons from the material gratings remaining in the coherent diffraction orders from the gratings is negligible in the far field.

Johnson, Cameron W.↗