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Nuclear Data Sheets for A = 75

The experimental nuclear spectroscopic data for known nuclides of mass number 75 (Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr) have been evaluated and presented together with Adopted properties for levels and γ rays. New high-spin data are available for {sup 75}Ga, and {sup 75}Rb; and lifetime data for high-spin states in {sup 75}Br and {sup 75}Kr. For ΔJ =1, M1+E2 transitions in two rotational bands in {sup 75}Kr, several B(E2)(W.u.) values are anomalously high, deviating by 2–3 σ values from currently accepted RUL(E2) = 300. In the opinion of the evaluators, there is need to remeasure level lifetimes and multipole mixing ratios in {sup 75}Kr to resolve this serious discrepancy. New precise single-particle transfer cross section data are available for {sup 75}Ga, {sup 75}Ge, {sup 75}As and {sup 75}Se from several different reactions (2009Ka06,2008Sc03); these data give information for occupancy of valence neutron orbitals in the ground states of target nuclides: {sup 76}Ge, {sup 76}Se and {sup 78}Se. No significant new data since the 1999 NDS for A = 75 have been reported for {sup 75}As and {sup 75}Se. No data are yet available for excited states in {sup 75}Co, {sup 75}Ni and {sup 75}Sr. For {sup 75}Fe, only the isotopic identification is made with one observed event. The radioactive decay schemes of {sup 75}Co and {sup 75}Ni are unknown while those for {sup 75}Rb and {sup 75}Sr are incomplete. This work supersedes the data presented in the previous NDS evaluation of A = 75 published by 1999Fa05.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Shape evolution at high spin states in Kr and Br isotopes

The high spin states in A = 75, Kr and Br isotopes have been populated via fusion-evaporation reaction at an incident beam energy of 90 MeV. The de-exciting γ-rays were detected utilizing the Indian National Gamma Array (INGA). Lifetime of these excited high spin states were determined by Doppler-shift attenuation method. Experimental results obtained from lifetime measurement are interpreted in the frame work of projected shell-model to get better insight into the evolution of collectivity. Comparison of the calculations of the model with transitional quadrupole moments Q{sub t} of the positive and negative parity bands firmly established their configurations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Stress enhanced diffusion of krypton ions in polycrystalline titanium

An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Plasma mirrors for short pulse KrF lasers

It is demonstrated for the first time that plasma mirrors can be successfully applied for KrF laser systems. High reflectivity up to 70% is achieved by optimization of the beam quality on the plasma mirror. The modest spectral shift and the good reflected beam quality allow its applicability for high power laser systems for which a new arrangement is suggested.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

The Influence of High-Energy Krypton Ion Implantation Temperature on Structure and Properties of Ni–Ti Alloy

The influence of the temperature of implantation of Ni–Ti shape memory alloy with {sub 84}Kr{sup 15+}ions at the energy E = 147 MeV on its structural-phase state is investigated. At the implantation temperatures 250 and 300°С, within the projective range Rp and out-range area the following processes and phenomena are observed: new formation of the martensitic В19'-phase, formation of nano-sized particles of the R-phase, increase in resistivity due to the formation of radiation-defect structures, strengthening of the alloy in the austenitic structural-phase state, and longer phase-transition temperature intervals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pulsed laser ablation of Ni in vacuum and N{sub 2} atmosphere at various fluences

Mechanisms of Ni ablation in vacuum and N{sub 2} atmosphere at various fluences ranging from 2.1 J cm{sup -2} to 3.4 J cm{sup -2} are studied by using a KrF excimer laser. The formation of various conical microstructures, ripples, large-sized irregular shaped cavities and pits is found. It is shown that no new phases are formed in the case of Ni ablation in vacuum, while new phases of nitrides and nitrooxides appear in the N{sub 2} environment. The microhardness analysis of targets irradiated in vacuum shows a decreasing trend with increasing fluence, whereas in the case of the N{sub 2} environment, a monotonic increase in hardness with increasing fluence is observed. (interaction of laser radiation with matter. laser plasma)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

HXeI and HXeH in Ar, Kr, and Xe matrices: Experiment and simulation

Experimental and theoretical studies of HXeI and HXeH molecules in Ar, Kr, and Xe matrices are presented. HXeI exhibits the H–Xe stretching bands at 1238.0 and 1239.0 cm{sup −1} in Ar and Kr matrices, respectively, that are blue-shifted from the HXeI band observed in a Xe matrix (1193 cm{sup −1}) by 45 and 46 cm{sup −1}. These shifts are larger than those observed previously for HXeCl (27 and 16 cm{sup −1}) and HXeBr (37 and 23 cm{sup −1}); thus, the matrix effect is stronger for less stable molecules. The results for HXeI are qualitatively different from all previous results on noble-gas hydrides with respect to the frequency order between Ar and Kr matrices. For previously studied HXeCl, HXeBr, and HXeCCH, the H–Xe stretching frequency is reliably (by >10 cm{sup −1}) higher in an Ar matrix than in a Kr matrix. In contrast, the H–Xe stretching frequency of HXeI in an Ar matrix is slightly lower than that in a Kr matrix. HXeH absorbs in Ar and Kr matrices at 1203.2 and 1192.1 cm{sup −1} (the stronger band for a Kr matrix), respectively. These bands are blue-shifted from the stronger band of HXeH in a Xe matrix (1166 cm{sup −1}) by 37 and 26 cm{sup −1}, and this frequency order is the same as observed for HXeCl, HXeBr, and HXeCCH but different from HXeI. The present hybrid quantum-classical simulations successfully describe the main experimental findings. For HXeI in the 〈110〉 (double substitution) site, the order of the H–Xe stretching frequencies (ν(Xe) < ν(Ar) < ν(Kr)) is in accord with the experimental observations, and also the frequency shifts in Ar and Kr matrices from a Xe matrix are well predicted (30 and 34 cm{sup −1}). Both in the theory and experiment, the order of the H–Xe stretching frequencies differs from the case of HXeCl, which suggests the adequate theoretical description of the matrix effect. For HXeH in the 〈100〉 (single substitution) site, the order of the frequencies is ν(Xe) < ν(Kr) < ν(Ar), which also agrees with the experiments. The calculated frequency shifts for HXeH in Ar and Kr matrices with respect to a Xe matrix (36 and 23 cm{sup −1}) are in a good agreement with the experiments. The present calculations predict an increase of the H–Xe stretching frequencies in the noble-gas matrices with respect to vacuum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Influence of Ar/Kr ratio and pulse parameters in a Cr-N high power pulse magnetron sputtering process on plasma and coating properties

Krypton is sometimes used in physical vapor deposition processes due to its greater atomic mass and size compared to argon, which leads to a lower gas incorporation and may have beneficial effects on kinetics of the coating growth. In this paper, the authors investigate the plasma composition and properties of deposited high power pulse magnetron sputtering Cr-N coatings for discharges with various Ar/Kr ratios and for various pulse lengths of 40 μs, 80 μs, and 200 μs, keeping the average discharge power constant. The results show that an addition of Kr influences the discharge process by altering the ignition and peak values of the discharge current. This influences the metal ion generation and growth conditions on the substrate by reducing the nucleation site densities, leading to a predominantly columnar grow. However, the deposition rate is highest for an Ar/Kr ratio of 120/80. The integral of the metal ion and atom emission exhibits the same trend, having a maximum for Ar/Kr ratio of 120/80. By decreasing the pulse length, the deposition rate of coatings decreases, while the hardness increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low-coherence interferometry as a tool for monitoring laser micro- and nanoprocessing of diamond surfaces

We have demonstrated the possibility of using low-coherence tandem optical interferometry for monitoring the local laser processing of diamond surfaces. Noncontact measurements of the optical thickness of single-crystal diamond plates were performed directly during the exposure of the surface to repetitive intense laser pulses. We investigated the dynamics of the thinning of a single crystal in two radically different regimes of laser etching: ablation (KrF excimer laser, λ = 248 nm, τ = 20 ns) and nanoablation (Ti : sapphire laser, λ = 266 nm, τ = 100 fs). (laser technologies)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

On the role of multiphoton light absorption in pulsed laser nanoablation of diamond

The rates of multipulse nanoablation of the diamond surface in air by pico- and nanosecond laser pulses that cause singlephoton, two-photon, three-photon and four-photon absorption in diamond are measured. In the experiments the radiation of ArF, KrF and Ti : Al{sub 2}O{sub 3} lasers and the second harmonic of the Yb : YAG laser was used. The power dependence of the material etching rate on the fluence of laser pulses was found. The power exponent of this dependence appeared to be twice lower than that found earlier for femtosecond pulses. We discuss the causes of the difference in the nanoablation regularities for 'short' and 'long' laser pulses.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe{sub 3}O{sub 4}. We implanted Kr ions accelerated at 30 kV on 13-nm-thick Fe{sub 3}O{sub 4} thin films at dosages of (1–40) × 10{sup 14} ions/cm{sup 2}. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2 × 10{sup 15} ions/cm{sup 2} of Kr ions. These dosages are more than ten times smaller than that used in the N{sub 2} implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe{sub 3}O{sub 4} from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation—ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA, which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Cavity morphology in a Ni based superalloy under heavy ion irradiation with hot pre-injected helium. II

In the current investigation, TEM in-situ heavy ion (1 MeV Kr{sup 2+}) irradiation with helium pre-injected at elevated temperature (400 °C) was conducted to simulate in-reactor neutron irradiation induced damage in CANDU spacer material Inconel X-750, in an effort to understand the effects of helium on irradiation induced cavity microstructures. Three different quantities of helium, 400 appm, 1000 appm, and 5000 appm, were pre-injected directly into TEM foils at 400 °C. The samples containing helium were then irradiated in-situ with 1 MeV Kr{sup 2+} at 400 °C to a final dose of 5.4 dpa (displacement per atom). Cavities were formed from the helium injection solely and the cavity density and size increased with increasing helium dosage. In contrast to previous heavy ion irradiations with cold pre-injected helium, heterogeneous nucleation of cavities was observed. During the ensuing heavy ion irradiation, dynamical observation showed noticeable size increase in cavities which nucleated close to the grain boundaries. A “bubble-void” transformation was observed after Kr{sup 2+} irradiation to high dose (5.4 dpa) in samples containing 1000 appm and 5000 appm helium. Cavity distribution was found to be consistent with in-reactor neutron irradiation induced cavity microstructures. This implies that the distribution of helium is greatly dependent on the injection temperature, and helium pre-injection at high temperature is preferred for simulating the migration of the transmutation produced helium.

36 MATERIALS SCIENCE↗

Fluorinated noble-gas cyanides FKrCN, FXeCN, and FXeNC

We report on three new noble-gas molecules, FKrCN, FXeCN, and FXeNC, prepared in low-temperature Kr and Xe matrices. These molecules are made by UV photolysis of FCN in the matrices and subsequent thermal annealing. The FCN precursor is produced by deposition of the matrix gas containing (FCN){sub 3} through a microwave discharge. The new noble-gas molecules are assigned with the help of quantum chemical calculations at the MP2(full) and CCSD(T) levels of theory. Similar Ar compounds (FArCN and FArNC) as well as FKrNC are not found in these experiments, which is in agreement with the calculated energetics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ultraviolet surface plasmon-mediated low temperature hydrazine decomposition

Conventional methods require elevated temperatures in order to dissociate high-energy nitrogen bonds in precursor molecules such as ammonia or hydrazine used for nitride film growth. We report enhanced photodissociation of surface-absorbed hydrazine (N{sub 2}H{sub 4}) molecules at low temperature by using ultraviolet surface plasmons to concentrate the exciting radiation. Plasmonic nanostructured aluminum substrates were designed to provide resonant near field concentration at λ = 248 nm (5 eV), corresponding to the maximum optical cross section for hydrogen abstraction from N{sub 2}H{sub 4}. We employed nanoimprint lithography to fabricate 1 mm × 1 mm arrays of the resonant plasmonic structures, and ultraviolet reflectance spectroscopy confirmed resonant extinction at 248 nm. Hydrazine was cryogenically adsorbed to the plasmonic substrate in a low-pressure ambient, and 5 eV surface plasmons were resonantly excited using a pulsed KrF laser. Mass spectrometry was used to characterize the photodissociation products and indicated a 6.2× overall enhancement in photodissociation yield for hydrazine adsorbed on plasmonic substrates compared with control substrates. The ultraviolet surface plasmon enhanced photodissociation demonstrated here may provide a valuable method to generate reactive precursors for deposition of nitride thin film materials at low temperatures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Simulation study of 3–5 keV x-ray conversion efficiency from Ar K-shell vs. Ag L-shell targets on the National Ignition Facility laser

Tailored, high-flux, multi-keV x-ray sources are desirable for studying x-ray interactions with matter for various civilian, space and military applications. For this study, we focus on designing an efficient laser-driven non-local thermodynamic equilibrium 3–5 keV x-ray source from photon-energy-matched Ar K-shell and Ag L-shell targets at sub-critical densities (∼n{sub c}/10) to ensure supersonic, volumetric laser heating with minimal losses to kinetic energy, thermal x rays and laser-plasma instabilities. Using HYDRA, a multi-dimensional, arbitrary Lagrangian-Eulerian, radiation-hydrodynamics code, we performed a parameter study by varying initial target density and laser parameters for each material using conditions readily achievable on the National Ignition Facility (NIF) laser. We employ a model, benchmarked against Kr data collected on the NIF, that uses flux-limited Lee-More thermal conductivity and multi-group implicit Monte-Carlo photonics with non-local thermodynamic equilibrium, detailed super-configuration accounting opacities from CRETIN, an atomic-kinetics code. While the highest power laser configurations produced the largest x-ray yields, we report that the peak simulated laser to 3–5 keV x-ray conversion efficiencies of 17.7% and 36.4% for Ar and Ag, respectively, occurred at lower powers between ∼100–150 TW. For identical initial target densities and laser illumination, the Ag L-shell is observed to have ≳10× higher emissivity per ion per deposited laser energy than the Ar K-shell. Although such low-density Ag targets have not yet been demonstrated, simulations of targets fabricated using atomic layer deposition of Ag on silica aerogels (∼20% by atomic fraction) suggest similar performance to atomically pure metal foams and that either fabrication technique may be worth pursuing for an efficient 3–5 keV x-ray source on NIF.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing

Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A{sup 3}B{sup 5}: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm{sup 2}, the hole concentration in GaAs: Mn layers increases to 3 × 10{sup 20} cm{sup –3}. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗