Search NASA⌕ Search

SEARCH · Search NASA

Results for “LC resonator”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Micromachined ceramic-based chipless LC resonator for high-temperature wireless sensing applications in harsh environments

The primary objective of this work was the fabrication and testing of a wireless LC resonator based on micro-patterned electroceramic materials for the monitoring of high-temperature systems. The twodimensional planar LC resonator sensors were designed and simulated using ANSYS Maxwell software, and these sensors were then fabricated from electrically conductive La 2 NiO 4 /Al 2 O 3 particulate inks. Initially, the phases of La 2 NiO 4 /Al 2 O 3 composite were evaluated by XRD. The patterning and deposition of the ink were completed using a novel micro-casting process onto Al 2 O 3 ceramic substrates, and the final pattern was bonded onto the substrate at 1200 °C for 2 h. The features and the reliability were analyzed by SEM microscopy. The frequency shift with respect to temperature was measured, which is directly related to changes in the sensor’s dielectric permittivity and pattern dimensions. The sensors were characterized at 500 °C–1000 °C in an ambient atmosphere with an RF signal ranging from 10–80 MHz at 175 kHz·s –1 sweep rate. The sensors showed a sensitivity of ~350 kHz °C –1 from 500 °C–1000 °C. Here, a new robust and adaptive signal processing approach was introduced to increase the degree of freedom for analyzing wireless sensors.

42 ENGINEERING↗
DOE OSTI2026

SQUID Readout of a High-$Q$ Superconducting $LC$ Resonator

We demonstrate the readout of a superconducting $LC$ resonator, with $Q \approx 2 \times 10^{6}$ at approximately 250 kHz, using a dc SQUID followed by a SQUID series-array amplifier readout chain. We find that $Q$ depends on the SQUID flux-bias point, increasing near the shallow-slope point of the SQUID modulation curve and decreasing near the steep-slope point, consistent with the previously observed SQUID damping effects. From this variation, we infer the SQUID effective input impedance. We further infer the effective temperature of the resonator circuit from the resonance peak in the noise spectrum and show that it also depends on the SQUID flux-bias point, suggesting a possible contribution from SQUID back-action noise. This system provides a working prototype for future experiments based on lumped-element resonators with SQUID readout, in particular low-mass axion searches within the DMRadio program.

FOS: Physical sciences↗
DOE OSTI2022

All-Ceramic Passive Wireless Temperature Sensor Realized by Tin-Doped Indium Oxide (ITO) Electrodes for Harsh Environment Applications

In this work, an all-ceramic passive wireless inductor–capacitor (LC) resonator was presented for stable temperature sensing up to 1200 °C in air. Instead of using conventional metallic electrodes, the LC resonators are modeled and fabricated with thermally stable and highly electroconductive ceramic oxide. The LC resonator was modeled in ANSYS HFSS to operate in a low-frequency region (50 MHz) within 50 × 50 mm geometry using the actual material properties of the circuit elements. The LC resonator was composed of a parallel plate capacitor coupled with a planar inductor deposited on an Al2O3 substrate using screen-printing, and the ceramic pattern was sintered at 1250 °C for 4 h in an ambient atmosphere. The sensitivity (average change in resonant frequency with respect to temperature) from 200–1200 °C was ~170 kHz/°C. The temperature-dependent electrical conductivity of the tin-doped indium oxide (ITO, 10% SnO2 doping) on the quality factor showed an increase of Qf from 36 to 43 between 200 °C and 1200 °C. The proposed ITO electrodes displayed improved sensitivity and quality factor at elevated temperatures, proving them to be an excellent candidate for temperature sensing in harsh environments. The microstructural analysis of the co-sintered LC resonator was performed using a scanning electron microscope (SEM) which showed that there are no cross-sectional and topographical defects after several thermal treatments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

Operational characteristics of a 200 C LC parallel resonant circuit

Research efforts are currently underway at the NASA Lewis Research Center to design and demonstrate an inverter capable of operating with a baseplate temperature of 200 C. In support of this project, various electrical components including capacitors, inductors, transformers, cables, and semiconductor switches are being developed or evaluated for integration into the inverter. In this work, a parallel LC resonant circuit was constructed and evaluated under simultaneous electrical and thermal stressing. The tests were performed in the temperature range of 25 to 200 C with an applied voltage of up to 90 V, 20 kHz. The individual components were comprised of high temperature film capacitors and powder core inductors developed in-house. The circuit was characterized in terms of the component currents and case temperatures as well as frequency of resonance as a function of applied bias and temperature. The results obtained, which have indicated good functional stability up to 200 C, are presented and discussed.

Baumann, Eric D.↗
NASA NTRS2011

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Scardelletti, Maximilian C.↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
DOE OSTI2024

Near-Field Passive Wireless Sensor for High-Temperature Metal Corrosion Monitoring

This work focuses on the fabrication and evaluation of a passive wireless sensor for the monitoring of the temperature and corrosion of a metal material at high temperatures. An inductor–capacitor (LC) resonator sensor was fabricated through the screen printing of Ag-based inks on dense polycrystalline Al 2 O 3 substrates. The LC design was modeled using the ANSYS HFSS modeling package, with the LC passive wireless sensors operating at frequencies from 70 to 100 MHz. The wireless response of the LC was interrogated and received by a radio frequency signal generator and spectrum analyzer at temperatures from 50 to 800 °C in real time. The corrosion kinetics of the Cu 110 was characterized through thermogravimetric (TGA) analysis and microscopy images, and the oxide thickness growth was then correlated to the wireless sensor signal under isothermal conditions at 800 °C. The results showed that the wireless signal was consistent with the corrosion kinetics and temperature, indicating that these two characteristics can be further deconvoluted in the future. In addition, the sensor also showed a magnitude- and frequency-dependent response to crack/spallation events in the oxide corrosion layer, permitting the in situ wireless identification of these catastrophic events on the metal surface at high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Near-field passive sensor for the monitoring of high-temperature oxidative corrosion of metals

This study reports on the development and testing of a passive wireless device designed to track temperature and corrosion behavior in SS304H stainless steel under elevated temperatures. The ANSYS HFSS software was utilized to model and optimize the design of an inductor-capacitor (LC) resonator passive wireless sensors fabricated using platinum designs printed onto an aluminum oxide support operating at frequencies between (50–190 MHz). The optimal LC wireless sensor designs were then fabricated using screen-printing and sintering methods. Here, the sensors were tested by placing the sensor onto polished SS304H flat substrates and heated to 900–1050 °C in air. Wireless acquisition of sensor data during heating, cooling, and isothermal stages was achieved through a Pt loop antenna connected to an RF signal generator and a network analyzer.

20 FOSSIL-FUELED POWER PLANTS↗
NASA NTRS1991

High-power converters for space applications

Phase 1 was a concept definition effort to extend space-type dc/dc converter technology to the megawatt level with a weight of less than 0.1 kg/kW (220 lb./MW). Two system designs were evaluated in Phase 1. Each design operates from a 5 kV stacked fuel cell source and provides a voltage step-up to 100 kV at 10 A for charging capacitors (100 pps at a duty cycle of 17 min on, 17 min off). Both designs use an MCT-based, full-bridge inverter, gaseous hydrogen cooling, and crowbar fault protection. The GE-CRD system uses an advanced high-voltage transformer/rectifier filter is series with a resonant tank circuit, driven by an inverter operating at 20 to 50 kHz. Output voltage is controlled through frequency and phase shift control. Fast transient response and stability is ensured via optimal control. Super-resonant operation employing MCTs provides the advantages of lossless snubbing, no turn-on switching loss, use of medium-speed diodes, and intrinsic current limiting under load-fault conditions. Estimated weight of the GE-CRD system is 88 kg (1.5 cu ft.). Efficiency of 94.4 percent and total system loss is 55.711 kW operating at 1 MW load power. The Maxwell system is based on a resonance transformer approach using a cascade of five LC resonant sections at 100 kHz. The 5 kV bus is converted to a square wave, stepped-up to a 100 kV sine wave by the LC sections, rectified, and filtered. Output voltage is controlled with a special series regulator circuit. Estimated weight of the Maxwell system is 83.8 kg (4.0 cu ft.). Efficiency is 87.2 percent and total system loss is 146.411 kW operating at 1 MW load power.

Park, J. N.↗
NASA NTRS2016

Design Overview of the DM Radio Pathfinder Experiment

We introduce the DM Radio, a dual search for axion and hidden photon dark matter using a tunable superconducting lumped-element resonator. We discuss the prototype DM Radio Pathfinder experiment, which will probe hidden photons in the 500 peV (100 kHz)-50 neV (10 MHz) mass range. We detail the design of the various components: the LC resonant detector, the resonant frequency tuning procedure, the differential SQUID readout circuit, the shielding, and the cryogenic mounting structure. We present the current status of the pathfinder experiment and illustrate it's potential science reach in the context of the larger experimental program.

axion↗
NASA NTRS2009

Complementary Paired G4FETs as Voltage-Controlled NDR Device

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Mojarradi, Mohammad↗
NASA NTRS2005

Piezohydraulic Pump Development

Reciprocating piston piezohydraulic pumps were developed originally under the Smart Wing Phase II program (Lynch) and later under the CHAP program (CSA, Kinetic Ceramics). These pumps focused on 10 cm scale stack actuators operating below resonance and, more recently, at resonance. A survey of commercially available linear actuators indicates that obtaining power density and specific power greater than electromagnetic linear actuators requires driving the stacks at frequencies greater than 1 KHz at high fields. In the case of 10 cm scale actuators the power supply signal conditioning becomes large and heavy and the soft PZT stack actuators generate a lot of heat due to internal losses. Reciprocation frequencies can be increased and material losses significantly decreased through use of millimeter scale single crystal stack actuators. We are presently targeting the design of pumps that utilize stacks at the 1-10 mm length scale and run at reciprocating frequencies of 20kHz or greater. This offers significant advantages over current approaches including eliminating audible noise and significantly increasing the power density and specific power of the system (including electronics). The pump currently under development will comprise an LC resonant drive of a resonant crystal and head mass operating against a resonant fluid column. Each of these resonant systems are high Q and together should produce a single high Q second order system.

Lynch, Christopher S.↗
DOE OSTI2023

Transition Metal Dichalcogenides: Making Atomic‐Level Magnetism Tunable with Light at Room Temperature

Abstract The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D‐DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers ( M ‐doped TX 2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin‐caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D‐TMD DMSs and heterostructures. By combining magneto‐LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V‐doped TMD monolayers (e.g., V‐WS 2 , V‐WSe 2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D‐TMD heterostructures (VSe 2 /WS 2 , VSe 2 /MoS 2 ), the significance of proximity, charge‐transfer, and confinement effects in amplifying light‐mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron–hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D‐TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next‐generation magneto‐optic nanodevices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Signal Differentiation of Moving Magnetic Nanoparticles for Enhanced Biodetection and Diagnostics

Magnetic nanoparticles are extensively utilized as markers/signal labelling in various biomedical applications. Detecting and distinguishing magnetic signals from similarly sized moving magnetic nanoparticles in microfluidic systems is crucial yet challenging for biosensing. In this study, we have developed an original method to detect and differentiate magnetic signals from moving superparamagnetic (SPM) and ferrimagnetic (FM) nanoparticles of comparable sizes. Our approach utilizes a highly sensitive magnetic-coil-based sensor that harnesses the combined effects of giant magnetoimpedance (GMI) and an LC-resonance circuit, offering performance superior to that of conventional GMI sensors. Iron oxide nanoparticles, which have similar particle sizes but differing coercivities (zero for SPM and non-zero for FM) or similar zero coercivities but differing particle sizes, flow through the magnetic coil at controlled velocities. Their distinct effects are analyzed through changes in the complex impedance of the sensing system. Our findings provide a unique pathway for utilizing SPM and FM nanoparticles as innovative magnetic markers to identify specific biological entities, thereby expanding their potential applications.

Hwang, Kee Young↗
NASA NTRS2011

AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

Gottardi, L.↗