Gain suppression study on LGADs at the CENPA tandem accelerator
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LGAD-Based Silicon Sensors for 4D Detectors
Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.
spatial resolution↗
Time Resolution Characterization of 4H-SiC LGADs with a 90 Sr Source
This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a 90Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61 ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. Furthermore, these results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.
43 PARTICLE ACCELERATORS↗
Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate
The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.
43 PARTICLE ACCELERATORS↗
Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)
Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.
High Energy Physics↗
Measured gain suppression in FBK LGADs with different active thicknesses
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. Using the CENPA Tandem accelerator at the University of Washington, the response of LGADs with different thicknesses to MeV-range energy deposits from a proton beam were studied. Three LGAD prototypes of 50 μm, 100 μm, and 150 μm were characterized. The devices' gain was determined as a function of bias voltage, incidence beam angle, and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. LGADs are considered for the active target (ATAR), and energy linearity is an important property for particle ID capabilities.
Particle tracking detectors↗
Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
43 PARTICLE ACCELERATORS↗
Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)
Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.
43 PARTICLE ACCELERATORS↗
Gain characterization of LGAD sensors with beta particles and 28-MeV protons
Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.
47 OTHER INSTRUMENTATION↗
Performance of neutron and proton irradiated AC-LGAD sensors
Characterization of strip and pixel AC-LGAD devices with both laser TCT and probe station (IV/CV) will be shown on AC-LGADs irradiated with 1 MeV reactor neutrons at JSI/Ljubljana and with 400 MeV protons at FNAL ITA to fluences from 1e13~$n_{eq}/cm^2$ to a few times 1e15~$n_{eq}/cm^2$. This study was conducted within the scope of the ePIC detector time of flight (TOF) layer R&D program at the EIC, which will feature AC-LGADs with strip and pixel geometry. Sensors in the TOF layer will receive up to 1e13 $n_{eq}/cm^2$ fluence over the lifetime of the experiment.
AC-LGAD strips↗
Results for pixel and strip centimeter-scale AC-LGAD sensors with a 120 GeV proton beam
Here, we present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20-μm-thick sensors achieving around 20 ps. Uniform performance is attainable with optimized n + sheet resistance, making these sensors ideal for future timing detectors. Conversely, 20-μm-thick strip sensors exhibit higher jitter than similar pixel sensors, negatively impacting time resolution, despite reduced Landau fluctuations with respect to the 50-μm-thick versions. Additionally, it is observed that a low resistivity in strip sensors limits signal size and time resolution, whereas higher resistivity improves performance. This study highlights the importance of tuning the n+ sheet resistance and suggests that further improvements should target specific applications like the Electron–Ion Collider or other future collider experiments. In addition, the detailed performance of four AC-LGADs sensor designs is reported as examples of possible candidates for specific detector applications. These advancements position AC-LGADs as promising candidates for future 4D tracking systems, pending the development of specialized readout electronics.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Performance of an X-γ ray detection system based on a thick silicon LGAD
We present the performance of a X-γ ray detection systems based on a 300 µm thick silicon low-gain avalanche diode (LGAD) and of an equivalent Diode structure without the gain layer, read-out by a custom-made low-noise charge amplifier. For the LGAD structure, the multiplication gains M s from 10.2 to 19.3 are measured, and the Equivalent Noise Charge (ENC) components have been studied in detail. As expected, a significant reduction of the white and 1/f voltage series and dielectric ENC components is observed with increasing gain, shortening the optimum peaking time to τ = 0.4÷8 μs depending on the gain value, with respect to the standard diode, while the parallel ENC component increases proportionally to the gain up to M s = 15. Setting the gain M s = 12.7, a minimum ENC = 34.5 electrons r.m.s. (298 eV FWHM) at τ = 1 μs is found. However, the electronic noise, evaluated on the pulser FWHM, is found to only marginally contribute to the width of the spectral lines of a radioactive source, which are dominated instead by the statistical noise of the charge multiplication within the LGAD structure. The spectral lines' excess width is found to be proportional to the signal multiplication gain M s and increases with the energy of the photons. A minimum line width of 850 eV FWHM at 13.9 keV is measured at room temperature, τ = 2 μs and a gain M s = 10.2.
47 OTHER INSTRUMENTATION↗
Performance of a second generation of the Fermilab Constant Fraction Discriminator ASIC for time-stamping long-strip AC-LGAD sensors.
We present the design and performance characterization results of the second generation of the novel Fermilab Constant Fraction Discriminator ASIC (FCFD) developed to readout AC-coupled low gain avalanche detector (AC-LGAD) sensors. This study presents the performance of the ASIC which was optimized specifically for reading out strip AC-LGAD sensors designed for ePIC experiment at EiC. Performance was measured using charge injection and particle beams with prototype AC-LGAD sensors wirebonded to the FCFD ASIC.
Apresyan, A.↗
Survey of AC-LGADs for future 4D trackers with a proton beam
We will present the first beam test results with centimeter-scale AC-LGAD strip sensors, using the Fermilab Test Beam Facility, and a study of the performance of AC-LGAD sensors as a function of their thickness. Sensors of this type are envisioned for applications that require large-area precision 4D tracking coverage with economical channel counts, including timing layers for the Electron Ion Collider (EIC), and space-based particle experiments. Long strip sensors with sparse readout offer better cost and performance for applications where channel count or electrical power density is a constraint. Thanks to the excellent signal to noise ratio in AC-LGADs, sparse readout can be exploited without significant degradation of spatial or time resolution, which is demonstrated in our studies. A survey of sensor designs is presented, with the aim of optimizing the electrode geometry for spatial resolution and timing performance. We will present our studies of the sensor geometry optimizatio n to maintain the desirable sensor performance characteristics with increasingly larger electrodes.
43 PARTICLE ACCELERATORS↗
First survey of centimeter-scale AC-LGAD strip sensors with a 120 GeV proton beam
We will present the first beam test results with centimeter-scale AC-LGAD strip sensors, using the Fermilab Test Beam Facility, and a study of the performance of AC-LGAD sensors as a function of their thickness. Sensors of this type are envisioned for applications that require large-area precision 4D tracking coverage with economical channel counts, including timing layers for the Electron Ion Collider (EIC), and space-based particle experiments. Long strip sensors with sparse readout offer better cost and performance for applications where channel count or electrical power density is a constraint. Thanks to the excellent signal to noise ratio in AC-LGADs, sparse readout can be exploited without significant degradation of spatial or time resolution, which is demonstrated in our studies. A survey of sensor designs is presented, with the aim of optimizing the electrode geometry for spatial resolution and timing performance. We will present our studies of the sensor geometry optimization to maintain the desirable sensor performance characteristics with increasingly larger electrodes.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Performance of Pixel and Strip AC-LGAD Sensors with Different Design Parameter on a 120 GeV Proton Beam
We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20- μm-thick sensors achieving around 20 ps. Uniform performance is attainable with optimized sheet resistance, making these sensors ideal for future timing detectors. Conversely, 20-μm-thick strip sensors exhibit higher jitter than similar pixel sensors, negatively impacting time resolution, despite reduced Landau fluctuations with respect to the 50-μm-thick versions. Additionally, it is observed that a low resistivity in strip sensors limits signal size and time resolution, whereas higher resistivity improves performance. This study highlights the importance of tuning the n+ sheet resistance and suggests that further improvements should target specific applications like the Electron-Ion Collider or other future collider experiments. In addition, the detailed performance of four AC-LGADs sensor designs is reported as examples of possible candidates for specific detector applications. These advancements position AC-LGADs as promising candidates for future 4D tracking systems, pending the development of specialized readout electronics.
Lara, Carlos Pérez↗
28nm front end ASIC and 12” LGADs for 3D integration
The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.
England, Troy [Fermilab] (ORCID:0000000154405255)↗
AC-LGADs Fermilab front-end electronics characterization
Here, we characterized the front-end electronics used to process high-frequency signals from low-gain avalanche diodes (LGADs) at the Fermilab Test Beam Facility. LGADs are silicon detectors employed for charged particle tracking, offering exceptional spatial and temporal resolution. The purpose of this characterization was to understand how the time resolution is influenced by the front-end electronics. To achieve this, we developed a setup capable of generating input signals with varying amplitudes. The output results demonstrated that signal processing by the front-end electronics plays a crucial role in enhancing time resolution. We showed that the time resolution achieved by the FEE board is better than 2 p s at the 1 σ level.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗