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Results for “LINE DEFECTS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Metallic line defect in wide-bandgap transparent perovskite BaSnO 3

A line defect with metallic characteristics has been found in optically transparent BaSnO 3 perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level–crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO 3 films.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effects of line defects on spin-dependent electronic transport of zigzag MoS{sub 2} nanoribbons

The nonlinear spin-dependent transport properties in zigzag molybdenum-disulfide nanoribbons (ZMNRs) with line defects are investigated systematically using nonequilibrium Green’s function method combined with density functional theory. The results show that the line defects can enhance the electronic transfer ability of ZMNRs. The types and locations of the line defects are found critical in determining the spin polarization and the current-voltage (I-V) characteristics of the line defected ZMNRs. For the same defect type, the total currents of the ribbons with the line defects in the centers are lager than those on the edges. And for the same location, the total currents of the systems with the sulfur (S) line defect are larger than the according systems with the molybdenum (Mo) line defect. All the considered systems present magnetism properties. And in the S line defected systems, the spin reversal behaviors can be observed. In both the spin-up and spin-down states of the Mo line defected systems, there are obvious negative differential resistance behaviors. The mechanisms are proposed for these phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Band gap control in a line-defect magnonic crystal waveguide

We report on the experimental observation of the spin wave spectrum control in a line-defect magnonic crystal (MC) waveguide. We demonstrate the possibility to control the forbidden frequency band (band gap) for spin waves tuning the line-defect width. In particular, this frequency may be greater or lower than the one of 1D MC waveguide without line-defect. By means of space-resolved Brillouin light scattering technique, we study the localization of magnetization amplitude in the line-defect area. We show that the length of this localization region depends on the line-defect width. These results agree well with theoretical calculations of spin wave spectrum using the proposed model of two coupled magnonic crystal waveguides. The proposed simple geometry of MC with line-defect can be used as a logic and multiplexing block for application in the novel field of magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Quantifying the dislocation content of atomically resolved grain boundary line defects using the Nye tensor

The Nye tensor, which quantifies the density of Burgers vector for a given dislocation line direction, can be effectively used to characterize dislocation content in bulk crystals from atomic-resolution transmission electron microscopy images. The Nye tensor can be calculated from these images, in part because the reference state is simply defined by the lattice of the perfect crystal. The application of the Nye tensor to interfacial line defects, for which the natural reference state is the dichromatic pattern of the two grains in their reference orientation, poses additional challenges. In this work, we present a method that employs the Nye tensor to characterize the edge dislocation content of line defects at grain boundaries from atomic-resolution images. This approach enables us to rapidly characterize all edge dislocation content along a grain boundary. Additionally, the Nye tensor provides information about line defect core structure. Finally, we demonstrate this method on two exemplar defects: a twin boundary disconnection and a facet junction in face-centered cubic Au.

Crystallographic defects↗
DOE OSTI2014

Confinement of magnetostatic forward volume waves in two-dimensional magnonic crystals with line defects

The mode patterns of magnetostatic forward volume waves (MSFVWs) propagating in two-dimensional magnonic crystals with line defects via periodic variation in thickness of square lattice in a yttrium iron garnet thin film are reported. The theoretical approach based on Walker's equation was employed to analyze the confinement of MSFVWs in the line defects. A good agreement between the theoretical predictions and the experimental results was obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Imaging of dark line defect growth in high-power diode laser cavities using broadband near infrared light emission from the laser cavity

An in situ and nondestructive technique is developed to image the formation and evolution of dark line defects in the cavity of a high-power diode laser. Here, the technique uses broadband near infrared emission that originates in the laser's core layers and enables defects to be imaged with high spatial resolution through the substrate. In particular, it enables defect imaging through the substrate of shorter wavelength lasers, even when the substrate is opaque near the lasing wavelength. The evolution of dark line defects during aging is studied in several devices, with correlations established between the observed characteristics of defect growth and changes in device parameters such as optical power, operating wavelength, threshold current, and slope efficiency. Gradual degradation is found to be associated with dark line defects that slowly propagate from dark spots that are present in the device interior in its fresh (unaged) condition, rather than propagating from spots that are formed during aging, suggesting a strategy to screen fresh devices for expected reliability. This defect growth phenomenon is found to be particularly evident in the dark spots near the output facet.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Approach and rotation of reconnecting topological defect lines in liquid crystal

Topological defects are a universal concept across many disciplines, such as crystallography, liquid-crystalline physics, low-temperature physics, cosmology, and even biology. In nematic liquid crystals, topological defects called disclinations have been widely studied. For their three-dimensional (3D) dynamics, however, only recently have theoretical approaches dealing with fully 3D configurations been reported. Further, recent experiments have observed 3D disclination line reconnections, a phenomenon characteristic of defect line dynamics, but detailed discussions were limited to the case of approximately parallel defects. In this paper, we focus on the case of two disclination lines that approach at finite angles and lie in separate planes, a more fundamentally 3D reconnection configuration. Observing and analyzing such reconnection events, we find the square-root law of the distance between disclinations and the decrease of the interdisclination angle over time. We compare the experimental results with theory and find qualitative agreement on the scaling of distance and angle with time, but quantitative disagreement on distance and angle relative mobilities. To probe this disagreement, we derive the equations of motion for systems with reduced twist constant and also carry out simulations for this case. These, together with the experimental results, suggest that deformations of disclinations may be responsible for the disagreement. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2024

Approach and rotation of reconnecting topological defect lines in liquid crystal

Topological defects are a universal concept across many disciplines, such as crystallography, liquid-crystalline physics, low-temperature physics, cosmology, and even biology. In nematic liquid crystals, topological defects called disclinations have been widely studied. For their three-dimensional (3D) dynamics, however, only recently have theoretical approaches dealing with fully 3D configurations been reported. Further, recent experiments have observed 3D disclination line reconnections, a phenomenon characteristic of defect line dynamics, but detailed discussions were limited to the case of approximately parallel defects. In this paper, we focus on the case of two disclination lines that approach at finite angles and lie in separate planes, a more fundamentally 3D reconnection configuration. Observing and analyzing such reconnection events, we find the square-root law of the distance between disclinations and the decrease of the interdisclination angle over time. We compare the experimental results with theory and find qualitative agreement on the scaling of distance and angle with time, but quantitative disagreement on distance and angle relative mobilities. To probe this disagreement, we derive the equations of motion for systems with reduced twist constant and also carry out simulations for this case. These, together with the experimental results, suggest that deformations of disclinations may be responsible for the disagreement.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nanoparticle localization within chiral liquid crystal defect lines and nanoparticle interactions

Self-assembly of colloidal particles into predefined structures is a promising way to design inexpensive manmade materials with advanced macroscopic properties. Doping of nematic liquid crystals (LCs) with nanoparticles has a series of advantages in addressing these grand scientific and engineering challenges. It also provides a very rich soft matter platform for the discovery of unique condensed matter phases. The LC host naturally allows the realization of diverse anisotropic interparticle interactions, enriched by the spontaneous alignment of anisotropic particles due to the boundary conditions of the LC director. Here we demonstrate theoretically and experimentally that the ability of LC media to host topological defect lines can be used as a tool to probe the behavior of individual nanoparticles as well as effective interactions between them. LC defect lines irreversibly trap nanoparticles enabling controlled particle movement along the defect line with the use of a laser tweezer. Minimization of Landau–de Gennes free energy reveals a sensitivity of the ensuing effective nanoparticle interaction to the shape of the particle, surface anchoring strength, and temperature, which determine not only the strength of the interaction but also its repulsive or attractive character. Theoretical results are supported qualitatively by experimental observations. Furthermore, this work may pave the way toward designing controlled linear assemblies as well as one-dimensional crystals of nanoparticles such as gold nanorods or quantum dots with tunable interparticle spacing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Design of refractive index sensing based on 2D PhC air-slot width-modulated line-defect microcavity

In this paper, we propose an investigated sensor array based on two-dimensional photonic crystal air-slot width-modulated line-defect microcavity. This sensor consists of a waveguide coupled with microcavity. To achieve a high quality factor, we have tuned some parameters of the microcavity. The principle of sensing is based on the resonance wavelength shift when the refractive index is changed. For sensitivity analysis, we proposed various conventional designs (A–D). We demonstrated that the design D has the highest sensitivity. An air-slot is created within the line-defect. The existence of the slots enhances the light-matter interactions. The simulation results are obtained by using finite-deference time-domain method. The sensitivity can achieve 400 nm/RIU, with detection limit of 2.98 × 10{sup −5} RIU.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Topological defect lines and renormalization group flows in two dimensions

We consider topological defect lines (TDLs) in two-dimensional conformal field theories. Generalizing and encompassing both global symmetries and Verlinde lines, TDLs together with their attached defect operators provide models of fusion categories without braiding. We study the crossing relations of TDLs, discuss their relation to the ’t Hooft anomaly, and use them to constrain renormalization group flows to either conformal critical points or topological quantum field theories (TQFTs). We show that if certain non-invertible TDLs are preserved along a RG flow, then the vacuum cannot be a non-degenerate gapped state. For various massive flows, we determine the infrared TQFTs completely from the consideration of TDLs together with modular invariance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Theoretical insights on the electro-thermal transport properties of monolayer MoS{sub 2} with line defects

Two dimensional (2D) materials demonstrate several novel electrical, mechanical, and thermal properties which are quite distinctive to those of their bulk form. Among many others, one important potential application of the 2D material is its use in the field of energy harvesting. Owing to that, here we present a detailed study on electrical as well as thermal transport of monolayer MoS{sub 2}, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we also consider various line defects which have been experimentally observed in mechanically exfoliated MoS{sub 2} samples. For calculating various parameters related to the electrical transmission, we employ the non-equilibrium Green's function-density functional theory combination. However, to obtain the phonon transmission, we take help of the parametrized Stillinger-Weber potential which can accurately delineate the inter-atomic interactions for the monolayer MoS{sub 2}. Due to the presence of line defects, we observed significant reductions in both the charge carrier and the phonon transmissions through a monolayer MoS{sub 2} flake. Moreover, we also report a comparative analysis showing the temperature dependency of the thermoelectric figure of merit values, as obtained for the perfect as well as the other defective 2D samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Longitudinal position dependence of dark line defect growth rate in high-power diode lasers at 790 nm

Using a nondestructive, in situ near-infrared defect imaging technique, we obtained time-resolved images of dark line defect (DLD) growth in the cavities of several high-power 790-nm diode lasers and calculated individual DLD growth rates. A clear longitudinal spatial dependence in the DLD growth rate was observed, in which the DLD growth rate was faster near the anti-reflective (AR) facet. Longitudinal spatial hole burning simulation results indicate that the total photon density increases toward the AR facet, while the carrier density decreases toward the AR facet. Here, these results suggest that photon absorption plays a key role in enhancing DLD growth beyond the contribution of the traditional carrier capture mechanism. Asymmetric DLD growth that was preferentially directed toward the high-reflectivity facet was also observed, providing further support for the role of photon absorption in the growth process. To account for these findings, we propose a photon-accelerated mechanism for the enhancement of DLD growth in which the slower carrier capture process in the traditional recombination-enhanced dislocation glide mechanism is replaced by a faster photon absorption process.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2022

The quantum $\mathrm{UV}$-$\mathrm{IR}$ map for line defects in $$ \mathfrak{gl} $$(3)-type class $\mathcal{S}$ theories

We consider the quantum UV-IR map for line defects in class S theories of $\mathfrak{gl}$(3)-type. This map computes the protected spin character which counts framed BPS states with spin for the bulk-defect system. We give a geometric method of computing this map motivated by the physics of five-dimensional $\mathcal{N}$ = 2 supersymmetric Yang-Mills theory, and compute it explicitly in various examples. As a spin-off we propose a new way of computing a certain specialization of the HOMFLY polynomial for links in $\mathbb{R}^3$, as a sum over BPS webs attached to the link.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Commuting Line Defects At $q^N$ = 1

Here, we explain the physical origin of a curious property of algebras $\mathcal{A}_{\mathfrak{q}}$ which encode the rotation-equivariant fusion ring of half-BPS line defects in four-dimensional $\mathcal{N}$ = 2 supersymmetric quantum field theories. These algebras are a quantization of the algebras of holomorphic functions on the three-dimensional Coulomb branch of the SQFTs, with deformation parameter log $\mathfrak{q}$. They are known to acquire a large center, canonically isomorphic to the undeformed algebra, whenever $\mathfrak{q}$ is a root of unity. We give a physical explanation of this fact. We also generalize the construction to characterize the action of this center in the $\mathcal{A}_{\mathfrak{q}}$-modules associated to three-dimensional $\mathcal{N}$ = 2 boundary conditions. Finally, we use dualities to relate this construction to a construction in the Kapustin–Witten twist of four-dimensional $\mathcal{N}$ = 4 gauge theory. These considerations give simple physical explanations of certain properties of quantized skein algebras and cluster varieties, and quantum groups, when the deformation parameter is a root of unity.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2018

Tuning and Switching a Plasmonic Quantum Dot “Sandwich” in a Nematic Line Defect

We study the quantum-mechanical effects arising in a single semiconductor core/shell quantum dot (QD) controllably sandwiched between two plasmonic nanorods. Control over the position and the 'sandwich' confinement structure is achieved by the use of a linear-trap liquid crystal (LC) line defect and laser tweezers that 'push' the sandwich together. This arrangement allows for the study of exciton-plasmon interactions in a single structure, unaltered by ensemble effects or the complexity of dielectric interfaces. We demonstrate the effect of plasmonic confinement on the photon antibunching behavior of the QD and its luminescence lifetime. The QD behaves as a single emitter when nanorods are far away from the QD but shows possible multiexciton emission and a significantly decreased lifetime when tightly confined in a plasmonic 'sandwich'. These findings demonstrate that LC defects, combined with laser tweezers, enable a versatile platform to study plasmonic coupling phenomena in a nanoscale laboratory, where all elements can be arranged almost at will.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Dancing Droplets on a Defect Line [Poster]

Liquid crystalline (LC) phases are made up of molecules or other small units that organize into mesoscale assemblies. Their order resembles that of crystalline solids, but since the molecules have some freedom to move position and direction, these assemblies also behave like liquids. Thus, highly birefringent and responsive phases with many defect (or disclination) lines can emerge. These ever fluctuating lines indicate regions of the LC where the position of the molecules disrupt the local rotational symmetry within the phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Index-like theorems from line defect vevs

In this paper we investigate the relation between complexified Fenchel-Nielsen coordinates and spectral network coordinates on Seiberg-Witten moduli space. The main technique is the comparison of exact expressions for the expectation value of ’t Hooft defects in certain 4D SU(2) N = 2 gauge theories. We derive an index-like theorem for a class of Dirac operators on singular monopole moduli spaces. Our expression determines the indices of Dirac operators on singular monopole moduli spaces in terms of characteristic numbers for vector bundles over certain Kronheimer-Nakajima quiver varieties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗