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At least 19 records

Nonequilibrium synthesis of NbAl3 and Nb-Al-V alloys by laser cladding. II - Oxidation behavior

Isothermal oxidation behaviors of NbAl3 alloy synthesized by laser cladding were investigated at temperatures between 800 and 1400 C, and the effect of vanadium microalloying on the oxidation of the laser-clad alloy was examined. The oxidation kinetics of the two alloys were monitored using thermal gravimetric weight gain data, and the bulk and surface chemistries were analyzed using XRD and XPS, respectively. It was found that NbAl3 did not form an exclusive layer of protective Al2O3. The oxidation products at 800 C were found to be a mixture of Nb2O5 and Al2O3. At 1200 C, a mixture of NbAlO4, Nb2O5, and Al2O3 formed; and at 1400 C, a mixture of NbAlO4, Al2O3, NbO2, NbO(2.432), and Nb2O5 formed. The addition of V led to a dramatic increase of the oxidation rate, which may be related to the formation of (Nb, V)2O5 and VO2, which grows in preference to protective Al2O3.

Haasch, R. T.↗

Nonequilibrium synthesis of NbAl3 and Nb-Al-V alloys by laser cladding. I - Microstructure evolution

The evolution of the microstructure in NbAl3 synthesized by a laser cladding technique (a rapid solidification process, with cooling rates up to 10 exp 6 C/sec) is investigated, and the phases are identified using convergent beam electron diffraction. Two new metastable phases were identified and characterized in detail. The effect of adding V on the final microstructure was also investigated, and the various phase chemistries and the partitioning of different elements into different phases were studied.

Sircar, S.↗

Finite Element Simulation of the Direct Energy Deposition using Comsol Multiphysics

Direct Energy Deposition (DED) is an emerging technology extensively employed in metal Additive Manufacturing (AM). Despite its widespread industrial application, mathematical modeling in this domain remains challenging. This complexity arises from the intricate nature of the modeling approach and the nonlinear behavior of material parameters across a broad temperature range. Consequently, experimentalists often resort to a trial-and-error method to achieve structures with desired properties. However, this approach can be time-consuming and may not always yield parts with the requisite characteristics, highlighting the necessity for mathematical modeling to enhance manufacturing success. This study focuses on thin-walled manufacturing with a single bead thickness, adjusting laser parameters to produce such structures. The laser cladding speed, typical for DED manufacturing, is considered to be on the order of centimeters per second. The various wall thicknesses and heights are explored to discern the general characteristics of walls manufactured via this DED approach. Our modeling approach diverges from the conventional DED modeling based on activation-deactivation of predefined mesh domains, commonly implemented in many finite element codes. Instead, a method is proposed that effectively models layer cladding and melt pool dynamics, enabling predictions of the microstructure in the resulting structures. The formation mechanisms of cellular, dendritic columnar, and stray (equiaxed) grains, which arise from the interplay between nucleation and growth from the surface is analyzed. The study also examines the feasibility of microstructure formation to demonstrate the various thermal characteristics inherent in wall manufacturing. Our results illustrate how different process parameters influence the temperature gradient and cooling rate of the molten pool, subsequently affecting the primary dendrite arm spacing (PDAS). This modeling technique allows for the investigation of diverse thermal conditions, facilitating the prediction of microstructure and residual stresses in the manufactured parts.

modeling↗

Cladding For Transversely-Pumped Laser Rod

Combination of suitable dimensioning and cladding of neodymium:yttrium aluminum garnet of similar solid-state laser provides for more efficient utilization of transversely-incident pump light from diode lasers. New design overcomes some of limitations of longitudinal- and older transverse-pumping concepts and promotes operation at higher output powers in TEM00 mode.

Byer, Robert L.↗

Cladding for transverse-pumped solid-state laser

In a transverse pumped, solid state laser, a nonabsorptive cladding surrounds a gain medium. A single tranverse mode, namely the Transverse Electromagnetic (TEM) sub 00 mode, is provided. The TEM sub 00 model has a cross sectional diameter greater than a transverse dimension of the gain medium but less than a transverse dimension of the cladding. The required size of the gain medium is minimized while a threshold for laser output is lowered.

Byer, Robert L.↗

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗

Transversely bounded DFB lasers

Bounded distributed-feedback (DFB) lasers are studied in detail. Threshold gain and field distribution for a number of configurations are derived and analyzed. More specifically, the thin-film guide, fiber, diffusion guide, and hollow channel with inhomogeneous-cladding DFB lasers are considered. Optimum points exist and must be used in DFB laser design. Different-modes feedback and the effects of the transverse boundaries are included. A number of applications are also discussed.

Elachi, C.↗

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven↗

Additive Manufacturing of Liquid Rocket Engine Combustion Devices: A Summary of Process Developments and Hot-Fire Testing Results

Additive Manufacturing (AM) of metals is a processing technology that has significantly matured over the last decade. For liquid propellant rocket engines, the advantages of AM for replacing conventional manufacturing of complicated and expensive metallic components and assemblies are very attractive. AM can significantly reduce hardware cost, shorten fabrication schedules, increase reliability by reducing the number of joints, and improve hardware performance by allowing fabrication of designs not feasible by conventional means. The NASA Marshall Space Flight Center (MSFC) has been involved with various forms of metallic additive manufacturing for use in liquid rocket engine component design, development, and testing since 2010. The AM technique most often used at the NASA MSFC has been powder-bed fusion or selective laser melting (SLM), although other techniques including laser directed energy deposition (DED), arc-based deposition, and laser-wire cladding techniques have also been used to develop several components. The purpose of this paper is to discuss the various internal programs at the NASA MSFC using AM to develop combustion devices hardware. To date at the NASA MSFC, combustion devices component hardware ranging in size from 100 lbf to 35,000 lbf have been designed and manufactured using SLM and deposition-based AM processes, and many of these pieces have been hot-fire tested. Combustion devices component hardware have included thrust chamber injectors, injector components such as faceplates, regeneratively-cooled combustion chambers, regeneratively-cooled nozzles, gas generator and preburner hardware, and augmented spark igniters. Ongoing and future developments for combustion devices have also included design of components sized for boost-class engines. Several design and hot-fire test iterations have been completed on these subscale and larger scale components, and a summary of these results will be presented as well.

Gradl, Paul↗

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗

Development of Advanced Laser Diode Sources

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the lambda approximately 930 nm region, these devices operate CW with threshold currents as low as 11 MA and slope efficiencies as high as 0.37 W/A. Tbey also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T(sub o), is 95 K.

Coleman, J. J.↗

Semiconductor structure and devices

Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

Dinkel, Nancy A.↗

InGaAsP/InP laser development for single-mode, high-data-rate communications

Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

Ladany, I.↗

Laser materials for the 0.67-microns to 2.5-microns range

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Toda, Minoru↗

Compact Hybrid Laser Rod and Laser System

A hybrid fiber rod includes a fiber core and inner and outer cladding layers. The core is doped with an active element. The inner cladding layer surrounds the core, and has a refractive index substantially equal to that of the core. The outer cladding layer surrounds the inner cladding layer, and has a refractive index less than that of the core and inner cladding layer. The core length is about 30 to 2000 times the core diameter. A hybrid fiber rod laser system includes an oscillator laser, modulating device, the rod, and pump laser diode(s) energizing the rod from opposite ends. The rod acts as a waveguide for pump radiation but allows for free-space propagation of laser radiation. The rod may be used in a laser resonator. The core length is less than about twice the Rayleigh range. Degradation from single-mode to multi-mode beam propagation is thus avoided.

Busch, George E.↗