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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Generalized Toeplitz–Hankel matrices and their application to a layered electron gas

We extend the standard result for the eigenspectrum of the Toeplitz matrix C ij = e –κ|i–j| with 0 ≤ i,j ≤ N and κ ϵ C to a combination of a Toeplitz matrix and a Hankel matrix. We apply this result to find the plasma modes of a layered assembly of a 2-dimensional electron gas. We find a sum rule relating the geometric mean of the frequencies of the plasma modes to the determinant of this Toeplitz matrix, for which an analytical expression is obtained. Here, we apply the same technique to the generalized case when the layers are not evenly spaced, where the corresponding matrix is not a Toeplitz-Hankel combination. Despite this fact, it is possible to find properties of the eigenspectrum, and the eigenmodes are localized to a few layers instead of extending across the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Reduction of ion backflow using a quadruple GEM detector with various gas mixtures

In gaseous tracking detectors with a large gaseous volume, like Time Projection Chambers (TPC), multiple layers of Gas Electron Multipliers (GEM) can be used to block positive ions from flowing back into the active volume, which is detrimental to the tracking performance. TPCs with multilayer GEM readout are used in the recently upgraded ALICE experiment, and in the upcoming sPHENIX experiment. In both cases, suppression of ion backflow (IBF) is important for achieving the desired detector performance. Here, we report on studies of effective gain, IBF, and energy resolution in quadruple GEM detectors, and on strategies for minimizing IBF by optimizing the operating voltages of the individual GEM layers and the potential differences between different layers. These studies are performed as baseline measurements intended to aid in the optimization of the operating conditions of the GEMs of the sPHENIX TPC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Secondary scintillation properties of multi-layer THGEMs operated in low-pressure CF 4 and Ar/5%Xe

We present a measurement of the secondary scintillation yield produced by two-layer Thick Gas Electron Multipliers (M-THGEMs) in pure Tetrafluoromethane (CF 4 ) gas and in Ar mixed with 5% Xe in low-pressures down to 20 Torr. The detector was irradiated with 5.49 MeV alpha particles from a low-rate 241-Am source. The secondary scintillation light generated during the gas avalanche process was read out by a Hamamatsu photomultiplier tube (model R8520-406), sensitive to a broad wavelength range (160–650 nm). The avalanche charge was collected on the bottom electrode of M-THGEM and correlated to the scintillation light on an event-by-event basis. We observed that, for both gas types, the value of the photon to electron production ratio (0.4 ph/el in CF 4 and 0.1 ph/el in Ar/5%Xe) increases with the thickness of the M-THGEM electrodes and varies significantly with the pressure, being higher at lower values. The decrease in electroluminescence yield at higher pressures is much more pronounced in the Ar/Xe mixture. In addition, because of a larger gas avalanche volume, the electroluminescence light yield is larger in thicker M-THGEM structures. Presented results are particularly useful for designing the next generation of Optical-readout Time Projection Chambers (O-TPCs) operated at low-pressure CF 4 ; applications include experimental nuclear physics with rare isotope beams, dark matter detection with directional sensitivity and observation of the Migdal effect in a low-pressure Optical TPC.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Commissioning of an MPGD-based Drift Chamber for Heavy-ion Tracking in FRIB's Sweeper magnet system

A newly developed drift chamber equipped with an innovative hybrid Micro-Pattern Gaseous Detector based readout was commissioned at FRIB. The detector consists of a Multi-layer Thick Gas Electron Multiplier (M-THGEM) mounted over a high-granularity, position-sensitive readout board. Denoted as the Micro-Pattern Drift Chamber (MPDC), the new device is used to provide tracking capability as part of the detectors of the Sweeper magnet system for neutron-invariant-mass spectrometry at the Facility for Rare Isotope Beams (FRIB). The localization of impinging ions in a 30 × 30 cm 2 drift area is derived by processing the charge-avalanche distribution induced on the segmented readout board. The signals induced on the readout pads are processed by a compact, multi-channel Data Acquisition System (DAQ) based on the Scalable Readout System (SRS). To facilitate synchronization with other detector systems of the Sweeper magnet system, the SRS has been configured to accept an external trigger.

Gaseous detectors↗
DOE OSTI2025

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗
DOE OSTI2021

A two-dimensional electron gas suspended above a neutralizing background

Highlights: • Two-dimensional electron gas above a neutralizing jellium background. • Analytic results for the value of the total energy. • Energy contribution originating from separation. • Added energy behaves as an effective kinetic energy term. We consider a two-dimensional electron gas system consisting of a layer of electrons suspended above its jellium neutralizing background counterpart. We investigate the energy of the system in the Hartree–Fock approximation as a function of separation distance between the layer of electrons and the background. We find that the energy of the system is influenced by the separation distance in such a way that the new energy contribution originating from such a separation behaves as an effective kinetic energy term. The increase of the overall energy with increase of the separation distance adversely affects the stability of electron liquid states at high density. The results are derived for a fully spin-polarized (spinless) system of electrons in the thermodynamic limit, but can easily be generalized to a spin unpolarized state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Similarities and differences between nickelate and cuprate films grown on a SrTiO 3 substrate

The recent discovery of superconductivity in Sr-doped NdNiO 2 films grown on SrTiO 3 started a novel field within unconventional superconductivity. Therefore, to understand the similarities and differences between nickelate and cuprate layers on the same SrTiO 3 substrate, here based on the density functional theory we have systematically investigated the structural, electronic, and magnetic properties of NdNiO 2 / SrTiO 3 and CaCuO 2 / SrTiO 3 systems. Our results revealed a strong lattice reconstruction in the case of NdNiO 2 / SrTiO 3 , resulting in a polar film, with the surface and interfacial NiO 2 layers presenting opposite displacements. To avoid the “polar catastrophe,” the NiO 2 surface to the vacuum reconstructs as well. However, for CaCuO 2 / SrTiO 3 , the distortions of those same two CuO 2 layers were in the same direction. In addition, we found this distortion to be approximately independent of the studied range of film thickness for the nickelate films. Furthermore, we also observed a two-dimensional electron gas at the interface between NdNiO 2 and SrTiO 3 , caused by the polar discontinuity, in agreement with recent literature. For NdNiO 2 / SrTiO 3 the two-dimensional electron gas extends over several layers, while for CaCuO 2 / SrTiO 3 this electronic rearrangement is very localized at the interface between CaCuO 2 and SrTiO 3 . The electronic reconstruction found at the interface involves a strong occupation of the Ti 3 d x y state. In both cases, there is a significant electronic charge transfer from the surface Ni or Cu layers to the Ti interface layer. The interfacial Ni and Cu layers are hole and electron doped, respectively. By introducing magnetism and electronic correlation, we observed that the d 3 z 2 - r 2 orbital of Ni becomes itinerant while the same orbital for Cu remains doubly occupied, establishing a clear two- vs one-orbital active framework for the description of these systems. Furthermore, we also observed a strong magnetic reconstruction at the NdNiO 2 surface to vacuum layer where magnetism is basically suppressed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Oxide heterostructures having spatially separated electron-hole bilayers

Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO3, a polar layer of LaAlO2, and a non-polar layer of SrTiO3. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Design, construction, and performance of the GEM based radial time projection chamber for the BONuS12 experiment with CLAS12

Here, a new radial time projection chamber based on Gas Electron Multiplier amplification layers was developed for the BONuS12 experiment in Hall B at Jefferson Lab. This device represents a significant evolutionary development over similar devices constructed for previous experiments, including cylindrical amplification layers constructed from single continuous GEM foils with less than 1% dead area. Particular attention had been paid to producing excellent geometric uniformity of all electrodes, including the very thin metalized polyester film of the cylindrical cathode. This manuscript describes the design, construction, and performance of this new detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Elucidating the Influence of Residual Polymer and Gas Environment on the Electronic Structure of a Graphene Layer Using in Situ APXPS

We use in situ ambient pressure X-ray photoelectron spectroscopy (APXPS) and ultraviolet photoelectron spectroscopy (UPS) to develop an effective method for studying changes in the graphene (Gr) electronic structure according to certain circumstance. The amount of polymethyl methacrylate (PMMA) residual polymer (RP), inevitably generated during the Gr transfer process, is significantly reduced from Gr surface by thermal annealing. This processed Gr is then sequentially exposed to specific gas environments (Ar, N 2 , O 2 , and CO 2 ), and APXPS or UPS is carried out to investigate the variations in the Gr electronic structure including the work function. When the amount of PMMA RP on Gr is reduced, the position of the main carbon peak shifts by more than 0.4 eV to a higher binding energy (in XPS spectra), and the secondary electron cutoff moves by about 0.2 eV to a lower binding energy (in UPS spectra). These changes are generally caused by a decrease in the Gr work function. On the other hand, exposure to the gas environments at different temperatures that we investigated did not produce significant changes in the work function and chemical states of Gr. These results confirm that the material in contact with Gr should be considered to achieve the desired Gr performance in electronics.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Transition from moving to stationary double layers in a single-ended Q machine

Large-amplitude (less than about 100 percent) relaxation oscillations in the plasma potential are known to be generated when the cold endplate of a single-ended Q machine is biased positively. These oscillations are associated with double layers that form near the hot plate (plasma source) and travel toward the endplate at about the ion-acoustic velocity. At the endplate they dissolve and then form again near the hot plate, the entire process repeating itself in a regular manner. By admitting a sufficient amount of neutral gas into the system, the moving double layers were slowed down and eventually stopped. The production of stationary double layers requires an ion source on the high-potential side of the double layers. These ions are provided by ionization of the neutral gas by electrons that are accelerated through the double layer. The dependence of the critical neutral gas pressure required for stationary double-layer formation on endplate voltage, magnetic field strength, and neutral atom mass has been examined. These results are discussed in terms of a simple model of ion production and loss, including ion losses across the magnetic field.

Song, Bin↗
DOE OSTI2024

Feld-induced modulation of two-dimensional electron gas at LaAlO 3 /SrTiO 3 interface by polar distortion of LaAlO 3

Since the discovery of two-dimensional electron gas at the LaAlO 3 /SrTiO 3 interface, its intriguing physical properties have garnered significant interests for device applications. Yet, understanding its response to electrical stimuli remains incomplete. Our in-situ transmission electron microscopy analysis of a LaAlO 3 /SrTiO 3 two-dimensional electron gas device under electrical bias reveals key insights. Inline electron holography visualized the field-induced modulation of two-dimensional electron gas at the interface, while electron energy loss spectroscopy showed negligible electromigration of oxygen vacancies. Instead, atom-resolved imaging indicated that electric fields trigger polar distortion in the LaAlO 3 layer, affecting two-dimensional electron gas modulation. This study refutes the previously hypothesized role of oxygen vacancies, underscoring the lattice flexibility of LaAlO 3 and its varied polar distortions under electric fields as central to two-dimensional electron gas dynamics. These findings open pathways for advanced oxide nanoelectronics, exploiting the interplay of polar and nonpolar distortions in LaAlO 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structures of strong shocks in low-density helium and neon gases

Strong shocks are essential components in many high-energy-density environments such as inertial confinement fusion implosions. However, the experimental measurements of the spatial structures of such shocks are sparse. In this paper, the soft x-ray emission of a shock front in a helium gas mixture (90% helium, 10% neon) and a pure neon gas was spatially resolved using an imaging spectrometer. We observe that the shock width in the helium mixture gas is about twice as large as in the pure neon gas. Moreover, they exhibit different precursor layers, where electron temperature greatly exceeds ion temperature, extending for more than ~350 µm with the helium gas mixture but less than 30 µm in the pure neon. At the shock front, calculations show that the electrons are strongly collisional with mean-free path two orders of magnitude shorter than the characteristic length of the shock. However, the helium ions can reach a kinetic regime as a consequence of their mean-free path being comparable to the scale of the shock. A radiation-hydrodynamic simulation demonstrates the impact of thermal conduction on the formation of the precursors with charge state, Z, playing a major role in heat flow and the precursor formation in both the helium mixture and the pure neon gases. Particle-in-cell simulations are also performed to study the ion kinetic effects on the formation of the observed precursors. A group of fast-streaming ions is observed leading the shock only in the helium gas mixture. Additionally, both effects explain the longer precursor layer in the helium shock.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Microstructural analysis of tristructural isotropic particles in high-temperature steam mixed gas atmospheres

High-temperature gas-cooled reactors (HTGRs) use tristructural isotropic (TRISO) particles embedded in a graphitic matrix material to form the integral fuel element. Potential off-normal reactor conditions for HTGRs include steam ingress with temperatures above 1,000 °C. Fuel element exposure to steam can cause the graphitic matrix material to evolve, forming an atmosphere composed of oxidants and oxidation products and potentially exposing the TRISO particles to these conditions. Investigating the oxidation response of TRISO particles exposed to a mixed gas atmosphere will provide insight into the stability under off-normal conditions. In this study, surrogate TRISO particles were exposed to high temperatures (T = 1,200 °C) in flowing steam (3% < pH 2 O < 21%) and CO (pCO < 1%) to determine the oxidation behavior of the SiC layer when exposed to various mixed gas atmospheres. Scanning electron microscopy, x-ray diffraction, and focused ion beam milling was used to determine the impact of CO and steam on the oxidation behavior of the SiC layer. Therefore, the data presented demonstrates how the SiC layer showed strong oxidation resistance due to limited SiO 2 growth and maintained its structural integrity under these off-normal conditions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1972

Gallium nitride optoelectronic devices

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Chu, T. L.↗
NASA NTRS1983

Thermal and electrical interaction of tantalum with a low temperature chemically active plasma flow

The paper deals with an experimental study of radiative heat transfer and charge transfer processes from the surface of tantalum plates under conditions of unsteady high-temperature heating and oxidation. It is shown that at plate temperatures of 1800 K, the heat flux may be as high as 400 kW/sq m. Heating is shown to stimulate the emissivity of tantalum and the temperature of the free electrons which surface, through a gas boundary layer, from the plasma onto the metal.

Zake, M. V.↗
DOE OSTI2023

Gate-tunable superconducting diode effect in a three-terminal Josephson device

Abstract The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗