Lithium-drifted silicon detectors as low-energy photon spectrometers
Fabrication and testing of lithium-drifted detectors as low energy photon spectrometers
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Fabrication and testing of lithium-drifted detectors as low energy photon spectrometers
Response of lithium-drifted silicon detectors for radiobiologic applications
Response of lithium-drifted silicon detectors to high energy alpha and proton beam and radiobiologic application
Electron irradiation effect on resolution of lithium-drifted silicon semiconductor detectors
Theory, characteristics, and fabrication of lithium-drifted silicon detectors
By making use of the signature of a gamma ray event as it appears in N = 5 to 20 lithium-drifted silicon detectors and applying smart selection algorithms, gamma rays in the energy range of 1 to 8 MeV can be detected with good efficiency and selectivity. Examples of the types of algorithms used for different energy regions include the simple sum mode, the sum-coincidence mode used in segmented detectors, unique variations on sum-coincidence for an N-dimensional vector event, and a new and extremely useful mode for double escape peak spectroscopy at pair-production energies. The latter algorithm yields a spectrum similar to that of the pair spectrometer, but without the need of the dual external segments for double escape coincidence, and without the large loss in efficiency of double escape events. Background events due to Compton scattering are largely suppressed. Monte Carlo calculations were used to model the gamma ray interactions in the silicon, in order to enable testing of a wide array of different algorithms on the event N-vectors for a large-N stack.
We present Monte Carlo analysis and experimental data from a novel lithium-drifted silicon detector stack for gamma ray spectroscopy instrumentation in future Mars surface landers and other planetary missions. The Monte Carlo analysis shows full energy photopeaks even in the range of about 100 keV to 2 MeV where, in Si, Compton scattering dominates the absorption processes. Laboratory data is shown for an experimental detector stack of four planar Si(Li) devices, each 5 mm thick with an active area 2 cm in diameter. All the experimental data were collected with maximum temperature of the stack at 175 K. Background reduction is achieved by using the detector of the stack closest to the source in anticoincidence. We present a comparison of experimental data from the stack with the Monte Carlo model for Cs-137 (662 keV). Agreement is shown to be good, with a full energy photopeak clearly seen (FWHM about 10 keV). Experimental stack data is also shown for multiple peaks at 511 keV (Na-22) and 662 keV (Cs-137). The peaks are clearly resolved (FWHM 10 keV), and are compared with the results obtained using a 8 percent resolution, 3 in. x 3 in. NaI(TI) device (FWHM about 50 keV).
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.
A technique was developed for preparing solid state, lithium-drifted silicon detectors. Hollow cylindrical detectors were built and tested for possible use as anticoincidence shields to replace conventional plastic scintillators and photomultipliers. A fission cell was developed for the Pioneer F/G instruments and the IMP I subsystem. An electron current detector was developed for Jovian belt measurements of electron flux. A number of circuits and semiconductor devices was also developed.
A soft X-ray, 0.3-1.0 keV spectrum from a 1 sr region which includes a portion of the North Polar Spur, obtained by three rocketborne lithium-drifted silicon detectors, shows the C V, C VI, O VII and O VIII emission lines. The spectrum is well fitted by a two-component, modified Kato (1976) model, where the coronal emission is in collisional equilibrium, with interstellar medium and North Polar Spur temperatures of 1.1 and 3.8 million K, respectively.
Fluctuations of energy loss by charged particles in lithium-drifted silicon semiconductor detectors
High-resolution lithium-drifted silicon and germanium detectors for measuring line widths of 2p-1s transitions in low-Z pionic atoms
We report on extensive tests of large-area (10cm diameter) high-purity ion-implanted silicon detectors for th Solar Isotope Spectrometer (SIS), and lithium-drifted silicon detetors for the Cosmic Ray Isotope Spectrometer (CRIS), which are under development for launch on the Advanced Composition Explorer (ACE) mission.
The research to define an energetic particle experiment for the OPTGT-MJS missions is reported. The studies reported include: (1) the use of silicon dectectors for low energy, low flux level measurements in the presence of RTG radiation and trapped electrons, (2) high energy proton damage of lithium-drifted and surface barrier silicon detectors, (3) the gas Cerenkov counter, (4) systems for detection of trapped high-energy protons in the presence of trapped electrons, and (5) reliability and redundancy.
Totally depleted silicon diodes are discussed which are used as nuclear particle detectors in investigations of galactic and solar cosmic radiation and trapped radiation. A study of radiation and chemical effects on the diodes was conducted. Work on electron and proton irradiation of surface barrier detectors with thicknesses up to 1 mm was completed, and work on lithium-drifted silicon devices with thicknesses of several millimeters was begun.