Structural and proximity-induced ferromagnetic properties of topological insulator-magnetic insulator heterostructures
Not Available
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Not Available
Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd 2 Ir 2 O 7 , that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy. The domain walls have a virtually temperature-independent sheet resistance of ~1 kilohm per square, show smooth morphology with no preferred orientation, are free from pinning by disorders, and have strong thermal and magnetic field responses that agree with expectations for all-in-all-out magnetic order.
Magnetic insulation of electrons prevents losses and can be applied to generating radiation or electron sources for high current and high power applications. Ion emission from the anode may degrade magnetic insulation. We develop equilibrium theory, self-consistently coupling magnetically insulated electron flow with free-flowing injected ions. Generally, ion injection is self-limiting from space charge; however, once insulation strength drops below about 1.2x the magnetic insulation threshold, ion space-charge limits vanish. Further, the gap effectively short-circuits and the electron flow layer asymptotically approaches the anode. In this regime a quasineutral, nonthermal plasma manifests, effectively reducing gap distance and suggesting quasiequilibrium gap closure evolution.
Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. In this study, we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb 2–x V x Te 3 hybrid heterostructure, where V doping is used to drive the TI (Sb 2 Te 3 ) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. Here, we report a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T = 2–3 K and an AHE at T = 80–300 K. Over T = 3–80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to a Dzyaloshinskii–Moriya interaction (DMI) at the interface; the DMI strength estimated is substantially higher than that in heavy metal-based systems.
A novel algorithm for the simulation of cathode plasmas in particle-in-cell codes is described and applied to investigate cathode plasma evolution in magnetically insulated transmission lines (MITLs). The MITL electron sheath is modeled by a fully kinetic electron species. Electron and ion macroparticles, both modeled as fluid species, form a dense plasma which is initially localized at the cathode surface. Energetic plasma electron particles can be converted to kinetic electrons to resupply the electron flux at the plasma edge (the “effective” cathode). Using this model, we compare results for the time evolution of the cathode plasma and MITL electron flow with a simplified (isothermal) diffusion model. Simulations in 1D show a slow diffusive expansion of the plasma from the cathode surface. But in multiple dimensions, the plasma can expand much more rapidly due to anomalous diffusion caused by an instability due to the strong coupling of a transverse magnetic mode in the electron sheath with the expanding resistive plasma layer.
Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases.
Not Available
The results of examination of the insulating magnetic field in an accelerating ion diode are presented. This field is produced in order to suppress the electron current and thus enhance the neutron yield of the D(d, n){sup 3}He nuclear reaction. The following two designs are discussed: a gas-filled diode with inertial electrostatic confinement of ions and a vacuum diode with a laser-plasma ion source and pulsed magnetic insulation. Although the insulating field of permanent magnets is highly nonuniform, it made it possible to extend the range of accelerating voltages to U = 200 kV and raise the neutron yield to Q = 10{sup 7} in the first design. The nonuniform field structure is less prominent in the device with pulsed magnetic insulation, which demonstrated efficient deuteron acceleration with currents up to 1 kA at U = 400 kV. The predicted neutron yield is as high as 109 neutrons/pulse.
Magnetically insulated line oscillator (MILO) using a metal disc-loaded coaxial cylindrical waveguide as its RF interaction structure is field analyzed for the beam-wave interaction using the linearized Vlasov equation. The beam present dispersion relation of the device is obtained applying the modal matching technique which is further used to estimate the oscillation frequency, temporal growth rate, output energy, and other device parameters. Further, MILO is simulated using commercial pic code 'magic,' and the electron momentum and energy plots are found to be in agreement with those obtained through the present analysis within 5%. Furthermore, the device temporal growth rate reported in the literature for the experimental MILO device is also compared with the present analytical theory and found in agreement {approx}5%.
Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and the absence of Ohmic loss. Spin-orbit torques (SOTs) on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the MI film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by studying the MI layer thickness-dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases. We report the significant enhancement of the measured SOT efficiency as the TmIG thickness increases, which is attributed to the increase of the magnetic moment density. We demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm.
Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.
Magnetically insulated transmission lines (MITLs) are critical components for efficiently transporting power from pulsed power sources to a diverse range of loads, including magneto-inertial confinement fusion and radiation production. This study investigates the behavior of planar MITLs, taking into account the source voltage and source and load impedances, using two-dimensional theory and simulations. Self-limited behavior, where the MITL operating impedance (voltage divided by current) is insensitive to the value of load impedance, is extended to small-to-large gap distance MITL transitions. Load-limited behavior, in which the load impedance is below the self-limited impedance, causes the MITL operating impedance to adjust to match the load impedance and can be extended to describe large-to-small transitions. In both cases, the operating impedance of the larger MITL section changes to match the self-limited operating impedance of the smaller section. This behavior extends to multiple transitions and to both low and high impedance loads. Assuming equilibration occurs (pulse duration larger than MITL transit time), the entire MITL operating impedance becomes the self-limited impedance of the smallest-gap MITL section or the load impedance, whichever is lower.
Self-magnetically insulated transmission lines (MITLs) connect pulsed-power drivers with a load. Although the technology was originally developed in the 1970s and is widely used today in super power generators, failure of the technology is the principal limitation on the power that can be delivered to an experiment. We address issues that are often overlooked, rejected after inadequate simulations, or covered by overly conservative assumptions: (i) electron retrapping in coupling MITLs to loads, (ii) the applicability of collisionless versus collisional electron flow, (iii) power transport efficiency as a function of the geometry at the beginning of the MITL, (iv) gap closure and when gap closure can be neglected, and (v) the role of negative ions in causing anode plasmas and enhancing current losses. We suggest a practical set of conservative design requirements for self-magnetically insulated electron flow based on the results discussed in this paper and on previously published results. The requirements are not necessarily severe constraints in all MITL applications; however, each of the 18 suggested requirements should be examined in the design of a MITL and in the investigation of excessive losses.
Electrical currents in a magnetic-insulator/heavy-metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy-metal side and spin-orbit torques (SOTs) on the magnetic-insulator side. Within the framework of a pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the fieldlike torque (FLT) to the dampinglike torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or Tm 3 Fe 5 O 12 /Pt heterostructures with different Tm 3 Fe 5 O 12 thicknesses, where Tm 3 Fe 5 O 12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between the measured effective fields of FLT and DLT is at least two times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin-torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic-insulator/heavy-metal heterostructures.
Interfacing topological insulators (TIs) with magnetic insulators (MIs) have been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of the magnetic proximity effect (MPE) imposed to TIs. Here, in this work, we report the observation of the nonlinear planar Hall effect (NPHE) in Bi 2 Se 3 films grown on MI thulium and yttrium-iron-garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi 2 Se 3 grown on nonmagnetic gadolinium-gallium-garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi 2 Se 3 depends linearly on the external magnetic field, while that in YIG/Bi 2 Se 3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate that the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.
We present a comparison study of the temperature dependence of the intriguing magnetoresistance (MR) in Pt/YIG (yttrium iron garnet), Pt/YIG BB (the YIG substrate has been bombarded with Ar + ), and Pt/SiO 2 (with different Fe doping levels). With decreasing temperature, the MRs in Pt/YIG and Pt/YIG BB change symmetry from R z = R x > R y at room temperature to R x > R z > R y at low temperature. A similar behavior in both Pt/YIG and Pt/YIG BB implies that the underlying physics is due to magnetic scattering, instead of the pure spin current across the interface. By changing the Fe doping level in the SiO 2 substrate, we can further systematically modulate the symmetry of MR in Pt/SiO 2 (Fe doped). The doping level dependent symmetry can also qualitatively explain the controversy over the MRs of Pt/YIG and similar structures at low temperature.