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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Ab Initio Study of the Structural, Magnetic, Electronic, and Thermodynamic Properties of Pd{sub 2}MnZ (Z = Ga, Ge, As) Heusler Alloys

The results of examination of the structural, magnetic, electronic, and thermodynamic properties of Pd{sub 2}MnZ (Z = Ga, Ge, As) Heusler alloys obtained in ab initio and Monte Carlo modeling are presented. It is demonstrated that a stable martensitic state is possible for Pd{sub 2}MnGa and Pd{sub 2}MnAs alloys. The equilibrium lattice parameter increases in the considered series of alloys with the number of valence electrons per atom (e/a). The Curie temperature of Pd{sub 2}MnZ (Z = Ga, Ge, As) alloys is determined using the calculated parameters of exchange interaction and total magnetic moments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (T{sub As}) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (T{sub Ga}) is negligible. T{sub As} is therefore the energetically favorable site for interstitial Mn in isolated form as well as when forming complexes with substitutional Mn. These results shed new light on the long standing controversy regarding T{sub As} versus T{sub Ga} occupancy of interstitial Mn in (Ga,Mn)As.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thermoelectric Properties of a Ferromagnetic Semiconductor Based on a Dirac Semimetal (Cd{sub 3}As{sub 2}) under High Pressure

The pressure dependences of thermal emf (a parameter that ranks among the most sensitive to phase transformations) are studied for the purpose of identifying baric phase transitions in the 10–50 GPa interval in the Cd{sub 3}As{sub 2} + MnAs (44.7% MnAs) structure formed by ferromagnetic MnAs granules in a semiconductor Cd{sub 3}As{sub 2} matrix.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural, electronic, and magnetic properties of single MnAs nanoclusters in GaAs

MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The topographic images reveal that the small clusters have the same zinc-blende crystal structure as the host material, while the larger clusters grow in a hexagonal crystal phase. The initial Mn concentration during molecular beam epitaxy growth has a strong influence on the size of the clusters that form during the annealing step. The local band structure of a single MnAs cluster is probed with scanning tunneling spectroscopy, revealing a Coulomb blockade effect that correlates with the size of the cluster. With a spin-sensitive tip, for the smaller clusters, superparamagnetic switching between two distinct states is observed at T = 77 K. The larger clusters do not change their magnetic state at this temperature, i.e., they are superferromagnetic, confirming that they are responsible for the ferromagnetic behavior of this material at room-temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the (111) slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at the buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

The effects of isochronal thermal annealing (at 325–725°C) on the radiative properties of InGaAs/GaAs nanoheterostructures containing a low-temperature GaAs layer δ-doped with Mn grown by laser deposition are studied. A decrease in the photoluminescence intensity and increase in the ground transition energy are observed upon thermal impact for quantum wells located near the low-temperature GaAs layer. The distribution of Mn atoms in the initial and annealed structures is obtained by secondary-ion mass spectrometry. A qualitative model of the observed effects of thermal annealing on the radiative properties of the structures is discussed; this model takes into account two main processes: diffusion of point defects (primarily gallium vacancies) from the GaAs coating layer deep into the structure and Mn diffusion in both directions by the dissociation mechanism. Magnetization studies show that, as a result of thermal annealing, an increase in the proportion of the ferromagnetic phase at room temperature (presumably, MnAs clusters) in the low-temperature GaAs coating layer takes place.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al{sub 2}O{sub 3} layers crystallized on Si(111) substrates

We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al{sub 2}O{sub 3} insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline γ-Al{sub 2}O{sub 3} grains are formed after an annealing treatment of the amorphous Al{sub 2}O{sub 3} layers deposited by atomic layer deposition on Si(111) substrates. The 〈111〉 direction of the γ-Al{sub 2}O{sub 3} grains tends to be oriented approximately parallel to the 〈111〉 direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO{sub 2}-masked Al{sub 2}O{sub 3} insulator crystallized on Si(111) substrates are oriented with the c-axis along the 〈111〉 direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline γ-Al{sub 2}O{sub 3} grains in the Al{sub 2}O{sub 3} layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n{sup +}-GaAs/GaMnAs and InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Role of Perpendicular Anisotropy in the Zigzag Domain Wall Structure in Thin Magnetic Films

We investigate apparently zigzag domain walls in ultrathin magnetic films and calculate the total energy in zero applied field considering anisotropies in the second-order approximation. We discuss the change in zigzag wall morphology and scale as a function of the dipolar length and the total energy depend on film parameters exclusively anisotropy constants, crystallographic orientation and film thickness for a given dipolar length. We explain also the role of the second-order anisotropy in the total energy and the dynamics response of the in-plane magnetization for a given dipolar length. We use some constants in connection with experimental data reported for amorphous TbCo films grown in external in-plane magnetic field by high-frequency ion sputtering and for MnAs on GaAs films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

(In,Mn)As multilayer quantum dot structures

(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition

A new design for diode heterostructures with (Ga, Mn)As ferromagnetic layers is experimentally investigated. The diode structures are fabricated using a combination of metal-organic chemical vapor deposition (MOCVD) epitaxy and pulsed laser deposition and contain (Ga, Mn)As/n-InGaAs heterojunctions. The electrical properties of the diodes in a magnetic field applied perpendicular to the p–n junction are examined. The negative magnetoresistance observed at temperatures of <50 K (below the (Ga, Mn)As Curie temperature) is attributed to a decrease in the carrier scattering caused by ferromagnetic ordering and in the potential barrier at the (Ga, Mn)As/n-InGaAs interface. The observed negative magnetoresistance depends nonmonotonically on the forward bias with a maximum in the voltage region close to the p–n-junction potential barrier height. The maximum can be caused by the decisive contribution of the spin-dependent resistances of the (Ga, Mn)As layer and (Ga, Mn)As/n-InGaAs interface to the total resistance of the structure. It is found that the dependence of the magnetoresistance on the external magnetic field is hysteretic due to the influence of tensile stresses in the (Ga, Mn)As layer grown on top of a relaxed In{sub x}Ga{sub 1 –x}As buffer layer with an indium content of x ≈ 0.1.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Magneto-transport anisotropy in epitaxially grown hybrid MnAs/GaAs multilayer

Using molecular-beam epitaxy, we grew a MnAs/GaAs multilayer on a GaAs(100) substrate and compared its magneto-transport characteristics to those of a single-layer MnAs thin film. The crystal orientation of the MnAs layers in both samples was type-B. M–H measurements revealed two-fold symmetric magnetic anisotropy on the surface with the easy and hard direction of magnetization. When the current flowed along the hard direction, the MnAs/GaAs multilayer exhibited negative magnetoresistance below Curie temperature; when the current flowed along the easy direction, it turned positive. We suggest that this peculiar anisotropic magneto-transport behavior in the multilayer originated from two-dimensional carrier confinement and spin-orbit coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Phase Separation in (Ga,Mn)As Layers Obtained by Ion Implantation and Subsequent Laser Annealing

In this paper, we present the results of studies of the spectral, temperature, and field dependences of the transversal Kerr effect in Ga{sub 1 –} {sub x}Mn{sub x}As (x = 0.0066–0.033) layers produced by ion implantation and subsequent pulsed laser annealing. The complicated nonmonotonous nature of the temperature dependences of the transversal Kerr effect and its dependence on the measurement range indicate a magnetic inhomogeneity of the layers. The reasons for the inhomogeneity can be the Gaussian distribution of Mn over the thickness of the layers and the electron phase separation in them. The appearance of new features in the spectra of the transversal Kerr effect is explained by the presence in the doped semiconductor matrix of nanoregions with a higher carrier concentration and a higher Curie temperature and a shift of the Fermi level into the valence band leading to an increase in the energy of optical transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dependence of Andreev reflection and Schottky barriers on GaMnAs/Nb interface treatment

We studied the interfacial contact between GaMnAs and superconducting Nb micro-structures both with and without removing the native GaMnAs surface oxide. Our results show that a strong Schottky barrier forms at the interface when the oxide layer is left between Nb and GaMnAs. This barrier can be confused for Andreev Reflection and erroneously used to extract spin polarization. A simple acid etch is shown to remove the oxide film, thus decreasing the interface resistance, removing the Schottky barrier, and causing a clear Andreev reflection effect. One key recommendation for point contact Andreev reflection studies is to push the tip hard enough into contact and verify that the total resistance is not too high.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗