A full waveguide band MMIC Tripler for 75-110 GHz
Design and test data for a full waveguide band MMIC tripler using anti-parallel Schottky diodes are reported in this paper.
MMIC tripler↗
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An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz
Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.
Siles, Jose V.↗
An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes
We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.
Monolithic Microwave Integrated Circuit, (MMIC)↗
An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes
We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW
passively cooled detectors↗
Broadband Sources in the 1-3 THz Range
Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range than can sufficiently pump multi-pixel imaging arrays.
sources↗
NASA Tech Briefs, February 2010
Topics covered include: Insulation-Testing Cryostat With Lifting Mechanism; Optical Testing of Retroreflectors for Cryogenic Applications; Measuring Cyclic Error in Laser Heterodyne Interferometers; Self-Referencing Hartmann Test for Large-Aperture Telescopes; Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser; Reconfigurable Hardware for Compressing Hyperspectral Image Data; Spatio-Temporal Equalizer for a Receiving-Antenna Feed Array; High-Speed Ring Bus; Nanoionics-Based Switches for Radio-Frequency Applications; Lunar Dust-Tolerant Electrical Connector; Compact, Reliable EEPROM Controller; Quad-Chip Double-Balanced Frequency Tripler; Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers; Radiation-Hardened Solid-State Drive; Use of Nanofibers to Strengthen Hydrogels of Silica, Other Oxides, and Aerogels; Two Concepts for Deployable Trusses; Concentric Nested Toroidal Inflatable Structures; Investigating Dynamics of Eccentricity in Turbomachines; Improved Low-Temperature Performance of Li-Ion Cells Using New Electrolytes; Integrity Monitoring of Mercury Discharge Lamps; White-Light Phase-Conjugate Mirrors as Distortion Correctors; Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer; ICER-3D Hyperspectral Image Compression Software; and Context Modeler for Wavelet Compression of Spectral Hyperspectral Images.
Source record↗
Compact Receiver Front Ends for Submillimeter-Wave Applications
The current generation of submillimeter-wave instruments is relatively mass and power-hungry. The receiver front ends (RFEs) of a submillimeter instrument form the heart of the instrument, and any mass reduction achieved in this subsystem is propagated through the instrument. In the current implementation, the RFE consists of different blocks for the mixer and LO circuits. The motivation for this work is to reduce the mass of the RFE by integrating the mixer and LO circuits in one waveguide block. The mixer and its associated LO chips will all be packaged in a single waveguide package. This will reduce the mass of the RFE and also provide a number of other advantages. By bringing the mixer and LO circuits close together, losses in the waveguide will be reduced. Moreover, the compact nature of the block will allow for better thermal control of the block, which is important in order to reduce gain fluctuations. A single waveguide block with a 600- GHz RFE functionality (based on a subharmonically pumped Schottky diode pair) has been demonstrated. The block is about 3x3x3 cubic centimeters. The block combines the mixer and multiplier chip in a single package. 3D electromagnetic simulations were carried out to design the waveguide circuit around the mixer and multiplier chip. The circuit is optimized to provide maximum output power and maximum bandwidth. An integrated submillimeter front end featuring a 520-600-GHz sub-harmonic mixer and a 260-300-GHz frequency tripler in a single cavity was tested. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional metal-machined blocks. Measurement results on the metal block give best DSB (double sideband) mixer noise temperature of 2,360 K and conversion losses of 7.7 dB at 520 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer is between 30 and 50 mW.
Mehdi, Imran↗
MMIC Replacement for Gunn Diode Oscillators
An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.
Crowe, Thomas W.↗
Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers
The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.
Lin, Robert H.↗