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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Prognostics of Power MOSFET

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

Celaya, Jose Ramon↗

Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.

Electrolytic capacitors↗

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

Saha, Sankalita↗

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Celaya, Jose R.↗

Prognostics Approach for Power MOSFET Under Thermal-Stress

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real sensors (no simulated behavior), we are attempting to assess how such algorithm behaves under realistic conditions.

Power MOSFET PHM↗

Prognostics of Power Electronics, Methods and Validation Experiments

Abstract Failure of electronic devices is a concern for future electric aircrafts that will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. As a result, investigation of precursors to failure in electronics and prediction of remaining life of electronic components is of key importance. DC-DC power converters are power electronics systems employed typically as sourcing elements for avionics equipment. Current research efforts in prognostics for these power systems focuses on the identification of failure mechanisms and the development of accelerated aging methodologies and systems to accelerate the aging process of test devices, while continuously measuring key electrical and thermal parameters. Preliminary model-based prognostics algorithms have been developed making use of empirical degradation models and physics-inspired degradation model with focus on key components like electrolytic capacitors and power MOSFETs (metal-oxide-semiconductor-field-effect-transistor). This paper presents current results on the development of validation methods for prognostics algorithms of power electrolytic capacitors. Particularly, in the use of accelerated aging systems for algorithm validation. Validation of prognostics algorithms present difficulties in practice due to the lack of run-to-failure experiments in deployed systems. By using accelerated experiments, we circumvent this problem in order to define initial validation activities.

Kulkarni, Chetan S.↗

Developing Deep Learning Models for System Remaining Useful Life Predictions: Application to Aircraft Engines

Prognostics and health management (PHM) is an important part of ensuring reliable operations of complex safety- critical systems. System-level remaining useful life (RUL) estimation is a much more complex problem than making estimations at the component level, and system-level RUL methodologies remain sparse in the literature. Model-based approaches have traditionally worked in the past for components such as capacitors, MOSFETs, batteries, or hard-drives (to name a few examples), but developing high fidelity dynamics models of cyber physical systems that can be used to study the effects of multiple degrading components in the system remains a challenging task. Some initial work on model-based System RUL predictions was demonstrated in Khorasgani, et al [1], but, to generalize the system-level prognostics problem, we have to resort to pure data driven and hybrid approaches. In this work, we propose an end-to-end data- driven framework for developing deep learning models to predict remaining useful life of cyber physical systems operating under unknown faulty conditions. The raw data is organized with a data schema that improves the model development process and down stream data analysis tasks. Due to the unknown faulty conditions, the raw sensor data is transformed into signals that expose the underlying degradation processes, which are then used for model development. Bayesian Optimization is used to tune the model parameters prior to training and validation. We show that this approach results in accurate predictions within 3 cycles to end of life (EOL). We demonstrate the effectiveness of our approach by applying it to the N-CMAPSS turbofan engine dataset recently released by NASA, which includes high fidelity degradation modeling, real world operating conditions, and a large set of fault operating modes.

Prognostics↗

Power Module Precursors and Prognostics

The ongoing work involves 1) the identification and evaluation of various electric signals as indicators to module failure and precursors to aging, and 2) the development of corresponding detection techniques. In the current phase, 1) the increase of on-state resistance is selected as the precursor to the power cycle aging of silicon carbide power MOSFET modules based on review and rest data. 2) A detection method leveraging the gate voltage fluctuations magnitude during commutation transients to inform the on-state resistance increase is investigated which has the benefit of being able to be integrated into the gate driver. A dedicated detection circuit for implementation is designed and simulated and is currently in fabrication.

ADVANCED PROPULSION SYSTEMS↗

Physics Based Modeling and Prognostics of Electrolytic Capacitors

This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

Kulkarni, Chetan↗

Lightning Pin Injection Test: MOSFETS in "ON" State

The test objective was to evaluate MOSFETs for induced fault modes caused by pin-injecting a standard lightning waveform into them while operating. Lightning Pin-Injection testing was performed at NASA LaRC. Subsequent fault-mode and aging studies were performed by NASA ARC researchers using the Aging and Characterization Platform for semiconductor components. This report documents the test process and results, to provide a basis for subsequent lightning tests. The ultimate IVHM goal is to apply prognostic and health management algorithms using the features extracted during aging to allow calculation of expected remaining useful life. A survey of damage assessment techniques based upon inspection is provided, and includes data for optical microscope and X-ray inspection. Preliminary damage assessments based upon electrical parameters are also provided.

Ely, Jay J.↗

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗