Magnetotransport and magnetic textures in Ho/FeCoGd/ β -W multilayers
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99 GENERAL AND MISCELLANEOUS↗
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Temperature-induced anomalous magnetotransport in the Weyl semimetal Mn 3 Ge
The magnetic Weyl semimetallic state can lead to intriguing magnetotransport, such as chiral anomaly and the layered quantum Hall effect. Mn3X (X = Sn, Ge) is a noncollinear antiferromagnetic semimetal where a Weyl semimetallic state is stabilized by time-reversal symmetry breaking. Compared to the well-studied Mn3Sn, the Weyl fermion-induced magnetotransport in Mn3Ge has been merely studied. Here, we report an in-depth study on the magnetotransport in a microfabricated Mn3Ge single crystal from room temperature to 10 K. We reveal an anomalous anisotropic magnetoresistance with fourfold symmetry and a positive high-field longitudinal magnetoresistance below the critical temperature (160–170 K). The possible origin is the temperature-induced tilting of the Weyl nodes. Our study helps to understand the magnetotransport properties in the Weyl fermion system.
36 MATERIALS SCIENCE↗
Origin of anomalous magnetotransport in kagome superconductors 𝐴V 3 Sb 5 (𝐴 = K,Rb,Cs)
Multiple anomalous features in electronic spectra of metals with a kagome lattice structure—van Hove singularities, Dirac points, and flat bands—imply that materials containing this structural motif may lie at a nexus of topological and correlated electron physics. Due to the prospects of such exceptional electronic behavior, the recent discovery of superconductivity coexisting with charge-density wave (CDW) order in the layered kagome metals 𝐴V 3 Sb 5 (𝐴 = K,Rb,Cs) has attracted considerable attention. Notably, these archetypal kagome metals express unconventional magnetotransport behavior, including an unexpected linear-in-𝐻 diagonal resistivity at low fields, and an even more peculiar, nonmonotonic sign-changing behavior of the Hall resistivity, which has been speculated to arise from a chiral CDW. We argue here that this unusual magnetotransport derives not from such unconventional phenomena, but rather from the unique fermiology of the 𝐴V 3 Sb 5 materials. Specifically, it is caused by a large, concave hexagonal Fermi surface sheet formed in the close proximity to the van Hove singularities, which is backfolded into a small hexagonal sheet and two large triangular sheets in the CDW state. We introduce and analyze a model of the electronic structure of these Fermi surface sheets that allows for a full analytical treatment within Boltzmann kinetic theory and that enables semi-quantitative fits of our transport data. Specifically, we find that the anomalous magnetotransport behavior is caused by the confluence of strong reduction of the Fermi velocity near the van Hove singularities located near the vertices of the hexagonal sheet and sharp corners in Fermi surface generated by the CDW reconstruction. In conclusion, our analytical approach not only explains the anomalous magnetotransport in the kagome superconductors but also can be extended to a variety of metallic systems hosting singular features in their Fermi surfaces.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Reconfigurable Magnetotransport in MnBi 2 Te 4 via Gate and Magnetic Field Tuning
The intrinsic magnetic topological insulator MnBi 2 Te 4 is a promising platform for exploring quantum phases with nontrivial band topology and for enabling electrical control over coupled magnetic and electronic phase transitions. In-plane magnetic fields, in particular, offer a distinct means of tuning these properties by strengthening quantized Hall effects, enhancing surface energy gaps, and driving spin reorientation transitions. However, a systematic understanding of how such fields affect magnetotransport is limited. Here, the magnetotransport behavior of few-layer MnBi 2 Te 4 as a function of gate voltage, temperature, and magnetic field angle, with a primary focus on in-plane field effects, are investigated. A gate-tunable crossover in magnetoresistance is observed from positive to negative values under in-plane magnetic fields as the gate voltage is swept below the charge neutrality point at temperatures below the Néel temperature. The in-plane field drives a transition from the antiferromagnetic ground state to a ferromagnetic configuration with spins aligned in-plane, while simultaneously altering the electronic structure, as revealed by gate-dependent transport features. The angle-dependent measurements reveal strongly gate-tunable magnetotransport anisotropy. These results establish in-plane magnetic fields as an effective tuning parameter for modulating spin and charge transport in MnBi 2 Te 4 , advancing prospects for reconfigurable spintronic and topological devices.
MnBi 2 Te 4↗
Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces
Anisotropic hopping in a toy Hofstadter model was recently invoked to explain a rich and surprising Landau spectrum measured in twisted bilayer graphene away from the magic angle. Suspecting that such anisotropy could arise from unintended uniaxial strain, we extend the Bistritzer–MacDonald model to include uniaxial heterostrain and present a detailed analysis of its impact on band structure and magnetotransport. We find that such strain strongly influences band structure, shifting the three otherwise-degenerate van Hove points to different energies. Coupled to a Boltzmann magnetotransport calculation, this reproduces previously unexplained nonsaturating B 2 magnetoresistance over broad ranges of density near filling ν = ± 2 and predicts subtler features that had not been noticed in the experimental data. In contrast to these distinctive signatures in longitudinal resistivity, the Hall coefficient is barely influenced by strain, to the extent that it still shows a single sign change on each side of the charge neutrality point—surprisingly, this sign change no longer occurs at a van Hove point. The theory also predicts a marked rotation of the electrical transport principal axes as a function of filling even for fixed strain and for rigid bands. More careful examination of interaction-induced nematic order versus strain effects in twisted bilayer graphene could thus be in order.
36 MATERIALS SCIENCE↗
Magnetotransport in semiconductors and two-dimensional materials from first principles
Here we demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility, and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our paper provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetotransport of Sm 2 Ir 2 O 7 across the pressure-induced quantum-critical phase boundary
Rare-earth pyrochlore iridates host two interlocking magnetic sublattices of corner-sharing tetrahedra and can harbour a unique combination of frustrated moments, exotic excitations and highly correlated electrons. They are also the first systems predicted to display both topological Weyl semimetal and axion insulator phases. We have measured the transport and magnetotransport properties of single-crystal Sm 2 Ir 2 O 7 up to and beyond the pressure-induced quantum critical point for all-in-all-out (AIAO) Ir order at p c = 63 kbar previously identified by resonant X-ray scattering and close to which Weyl semimetallic behavior has been previously predicted. Our findings overturn the accepted expectation that the suppression of AIAO order should lead to metallic conduction persisting down to zero temperature. Instead, the resistivity-minimum temperature, which tracks the decrease in the AIAO ordering temperature for pressures up to 30 kbar, begins to increase under further application of pressure, pointing to the presence of a second as-yet unidentified mechanism leading to non-metallic behavior. The magnetotransport does track the suppression of Ir magnetism, however, with a strong hysteresis observed only within the AIAO phase boundary, similar to that found for Ho 2 Ir 2 O 7 and attributed to plastic deformation of Ir domains. Around pc we find the emergence of a new type of electronic phase, characterized by a negative magnetoresistance with small hysteresis at the lowest temperatures, and hysteresis-free positive magnetoresistance above approximately 5K. The temperature dependence of our low-temperature transport data are found to be best described by a model consistent with a Weyl semimetal across the entire pressure range.
36 MATERIALS SCIENCE↗
Magnetotransport of Sm 2 Ir 2 O 7 across the pressure-induced quantum-critical phase boundary
Rare-earth pyrochlore iridates host two interlocking magnetic sublattices of corner-sharing tetrahedra and can harbour a unique combination of frustrated moments, exotic excitations and highly correlated electrons. They are also the first systems predicted to display both topological Weyl semimetal and axion insulator phases. We have measured the transport and magnetotransport properties of single-crystal Sm 2 Ir 2 O 7 up to and beyond the pressure-induced quantum critical point for all-in-all-out (AIAO) Ir order at $p_c$ = 63 kbar previously identified by resonant X-ray scattering and close to which Weyl semimetallic behavior has been previously predicted. Our findings overturn the accepted expectation that the suppression of AIAO order should lead to metallic conduction persisting down to zero temperature. Instead, the resistivity-minimum temperature, which tracks the decrease in the AIAO ordering temperature for pressures up to 30 kbar, begins to increase under further application of pressure, pointing to the presence of a second as-yet unidentified mechanism leading to non-metallic behavior. The magnetotransport does track the suppression of Ir magnetism, however, with a strong hysteresis observed only within the AIAO phase boundary, similar to that found for Ho 2 Ir 2 O 7 and attributed to plastic deformation of Ir domains. Around $p_c$ we find the emergence of a new type of electronic phase, characterized by a negative magnetoresistance with small hysteresis at the lowest temperatures, and hysteresis-free positive magnetoresistance above approximately 5 K. The temperature dependence of our low-temperature transport data are found to be best described by a model consistent with a Weyl semimetal across the entire pressure range.
36 MATERIALS SCIENCE↗
Thickness dependence of magnetotransport properties of tungsten ditelluride
Here we investigate the electronic structure of tungsten ditelluride (WTe 2 ) flakes with different thicknesses in magnetotransport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the “turn-on” behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe 2 and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of the Fermi surface, which reveals that multilayer WTe 2 is an electronic 3D material and the anisotropy decreases as thickness decreases.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices
The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.
MXenes↗
Strain and Defect-Tailored Magnetotransport in NiCo 2 O 4 Thin Films and Freestanding Membranes
Magnetic spinel NiCo 2 O 4 is promising for developing spintronic applications due to its high magnetic Curie temperature, high spin polarization, fast spin dynamics, and strain-tunable magnetic anisotropy, while its electronic and magnetic properties depend sensitively on epitaxial strain and disorder. Here, in this study, we use epitaxial NiCo 2 O 4 thin films and freestanding NiCo 2 O 4 membranes as model systems to reveal the complex interplay of strain and defects in determining the metallicity and magnetotransport properties of the ferrimagnetic spinel. NiCo 2 O 4 on perovskite substrates and NiCo 2 O 4 membranes exhibit insulating behaviors and spin canting, in sharp contrast to the metallic NiCo 2 O 4 films on spinel substrates that possess strong perpendicular magnetic anisotropy. Anisotropic magnetoresistance studies provide critical information about disorder-induced spin scattering and strain-induced tetragonal magnetocrystalline anisotropy, which is corroborated by comprehensive electron microscopy characterizations. Our study presents a promising venue for designing flexible magnetic memory, sensor, and spintronic applications.
36 MATERIALS SCIENCE↗
Pseudogap behavior in charge density wave kagome material ScV 6 Sn 6 revealed by magnetotransport measurements
Over the last few years, significant attention has been devoted to studying the kagome materials A V 3 Sb 5 (A = K, Rb, Cs) due to their unconventional superconductivity and charge density wave (CDW) ordering. Recently $ScV_{6}Sn_{6}$ was found to host a CDW below ≈ 90 K, and, like A V 3 Sb 5 , it contains a kagome lattice comprised only of V ions. Here we present a comprehensive magnetotransport study on $ScV_{6}Sn_{6}$. We discovered several anomalous transport phenomena above the CDW ordering temperature, including insulating behavior in interlayer resistivity, a strongly temperature-dependent Hall coefficient, and a violation of Kohler’s rule. All these anomalies can be consistently explained by a progressive decrease in carrier densities with decreasing temperature, suggesting the formation of a pseudogap. Our findings suggest that high-temperature CDW fluctuations play a significant role in determining the normal state electronic properties of $ScV_{6}Sn_{6}$.
36 MATERIALS SCIENCE↗
Compact in situ probe for magnetotransport measurements of 2D materials under variable tensile strain
The recent development of freestanding oxide membranes has opened new opportunities for strain engineering of transition metal oxides beyond values accessible in bulk samples. While a number of studies have been performed with fixed strain, the ability to dynamically control the strain state during measurement would be greatly enabling. To this end, we present an in situ uniaxial strain probe optimized for transport measurements of tensile-strained 2D or quasi-2D materials down to 2 K. Utilizing a flexible polyimide substrate as the stress transfer medium, our platform simplifies the sample preparation process and allows precise alignment of strain fields relative to the crystalline axes. An in situ optical microscope monitors the macroscopic strain state operando and makes it possible to complete an entire magnetotransport study at cryogenic temperatures under continuous strain variations. We demonstrate the capabilities of the probe on a freestanding LaNiO 3 membrane, where we induce tensile strain up to 8% and observe a corresponding strong transport anisotropy. In view of the rapid developments in low-dimensional materials synthesis and the plethora of novel quantum phenomena they exhibit, this strain probe provides general instrumentation for examining and controlling these properties via strain.
2D materials↗
Magnetotransport properties of the topological nodal-line semimetal CaCdSn
Topological nodal-line semimetals support protected band crossings, which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. In this work, our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the Γ point in the absence of spin-orbit coupling effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility (μ ≈ 3.44 × 10 4 cm 2 V –1 s –1 ) and displays a field-induced metal-semiconductor-like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear nonsaturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures (≈ 7.44 × 10 3 % and ≈ 1.71 × 10 3 %, respectively, at 4 K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films
Here, we examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry and x-ray diffraction measurements suggest that phase-pure GdPt x Sb films can accommodate up to 15% of Pt vacancies (x = 0.85), which act as acceptors, as measured by the Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display metallic temperature-dependent resistivity (dρ/dT > 0). The longitudinal magnetoresistance (LMR, magnetic field B parallel to electric field E) is more negative than transverse magnetoresistance (TMR, B⊥E), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes, however, suggests that conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductorlike resistivity (dρ/dT > 0) and more negative TMR than LMR. Hysteresis and other nonlinearities in the low-field Hall effect and magnetoresistance suggest that spin-disorder scattering and possible topological Hall effect may dominate the near-stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes but point to possible topological spin textures in GdPtSb.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Unconventional magnetotransport and antiferromagnetic order in Eu 2 InTe 5
Here, we report on the structural characterization and physical properties of Eu 2 InTe 5 , a distorted square-net motif antiferromagnetic semiconductor. Single crystal x-ray diffraction measurements reveal a distortion of the Te square-net layers such that an orthorhombic supercell is necessary to accurately describe the structure. Magnetization, resistivity, and specific heat measurements confirm antiferromagnetic ordering at 𝑇 𝑁 = 7.3K. Anisotropy in magnetization data suggests the magnetic moments are oriented parallel to the 𝑐 axis. We observe an unconventional transverse magnetoresistance and Hall resistivity in the paramagnetic state (𝑇 ≤ 80K), indicating strong coupling between localized Eu 2+ magnetic moments and conduction electrons. Resistivity and Hall measurements indicate the material is a heavily doped semiconductor, with impurity states related to disorder. Our findings highlight a relatively unexplored Eu-based antiferromagnetic semiconductor with unconventional magnetotransport behavior.
Cook, Matthew S. [Oak Ridge National Laboratory (O↗
Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Nanoscale Imaging of Magnetotransport around a Circular 𝑝−𝑛 Junction in Graphene
Magnetoresistance studies of 2D systems are often shaped by the motion of electrons that occupy spatially confined wave functions, such as topological edge modes and disorder-induced bound states. Directly probing how such states form and behave in situ , under applied currents, provides a clear way of connecting microscopic physics to the macroscopic transport response. Here, in this Letter, scanning tunneling potentiometry is used to probe the local, current-induced electrochemical potential of carriers in graphene near circular 𝑝−𝑛 junctions in an out-of-plane magnetic field ranging from 0 to 1.4 T. These measurements provide detailed information about the motion of carriers at the nanometer scale, revealing how it evolves with increasing field. The electrochemical potential displays distinct patterns, such as dipoles, spirals, and concentric disks in weak, moderate, and high fields, respectively. The size and orientation of these patterns can be used to understand how local carrier dynamics change in different transport regimes as well as to directly extract physical parameters such as the electron mean free path and cyclotron diameter.
36 MATERIALS SCIENCE↗