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At least 19 records

Fast-Response-Time Shape-Memory-Effect Foam Actuators

Bulk shape memory alloys, such as Nitinol or CuAlZn, display strong recovery forces undergoing a phase transformation after being strained in their martensitic state. These recovery forces are used for actuation. As the phase transformation is thermally driven, the response time of the actuation can be slow, as the heat must be passively inserted or removed from the alloy. Shape memory alloy TiNi torque tubes have been investigated for at least 20 years and have demonstrated high actuation forces [3,000 in.-lb (approximately equal to 340 N-m) torques] and are very lightweight. However, they are not easy to attach to existing structures. Adhesives will fail in shear at low-torque loads and the TiNi is not weldable, so that mechanical crimp fits have been generally used. These are not reliable, especially in vibratory environments. The TiNi is also slow to heat up, as it can only be heated indirectly using heater and cooling must be done passively. This has restricted their use to on-off actuators where cycle times of approximately one minute is acceptable. Self-propagating high-temperature synthesis (SHS) has been used in the past to make porous TiNi metal foams. Shape Change Technologies has been able to train SHS derived TiNi to exhibit the shape memory effect. As it is an open-celled material, fast response times were observed when the material was heated using hot and cold fluids. A methodology was developed to make the open-celled porous TiNi foams as a tube with integrated hexagonal ends, which then becomes a torsional actuator with fast response times. Under processing developed independently, researchers were able to verify torques of 84 in.-lb (approximately equal to 9.5 Nm) using an actuator weighing 1.3 oz (approximately equal to 37 g) with very fast (less than 1/16th of a second) initial response times when hot and cold fluids were used to facilitate heat transfer. Integrated structural connections were added as part of the net shape process, eliminating the need for welding, adhesives, or mechanical crimping. Inexpensive net-shape processing was used, which reduces the cost of the actuator by over a factor of 10 over nonporous TiNi made by hot drawing of tube or electrical discharge machining. By forming the alloy as an open-celled foam, the surface area for heat transfer is dramatically increased, allowing for much faster response times. The technology also allows for netshape fabrication of the actuator, which allows for structural connections to be integrated into the actuator material, making these actuators significantly less expensive. Commercial applications include actuators for concepts such as the variable area chevron and nozzle in jet aircraft. Lightweight tube or rod components can be supplied to interested parties.

Jardine, Peter↗

Memory effects in turbulence

Experimental investigations of the wake flow of a hemisphere and cylinder show that such memory effects can be substantial and have a significant influence on momentum transport. Memory effects are described in terms of suitable memory functions.

Hinze, J. O.↗

Fast Response, Open-Celled Porous, Shape Memory Effect Actuators with Integrated Attachments

This invention relates to the exploitation of porous foam articles exhibiting the Shape Memory Effect as actuators. Each foam article is composed of a plurality of geometric shapes, such that some geometric shapes can fit snugly into or around rigid mating connectors that attach the Shape Memory foam article intimately into the load path between a static structure and a moveable structure. The foam is open-celled, composed of a plurality of interconnected struts whose mean diameter can vary from approximately 50 to 500 microns. Gases and fluids flowing through the foam transfer heat rapidly with the struts, providing rapid Shape Memory Effect transformations. Embodiments of porous foam articles as torsional actuators and approximately planar structures are disposed. Simple, integral connection systems exploiting the ability to supply large loads to a structure, and that can also supply hot and cold gases and fluids to effect rapid actuation are also disposed.

Jardine, Andrew Peter↗

Fast Response Shape Memory Effect Titanium Nickel (TiNi) Foam Torque Tubes

Shape Change Technologies has developed a process to manufacture net-shaped TiNi foam torque tubes that demonstrate the shape memory effect. The torque tubes dramatically reduce response time by a factor of 10. This Phase II project matured the actuator technology by rigorously characterizing the process to optimize the quality of the TiNi and developing a set of metrics to provide ISO 9002 quality assurance. A laboratory virtual instrument engineering workbench (LabVIEW'TM')-based, real-time control of the torsional actuators was developed. These actuators were developed with The Boeing Company for aerospace applications.

Jardine, Peter↗

Fatigue of graphite/epoxy /0/90/45/-45/s laminates under dual stress levels

A model for the prediction of loading sequence effects on the statistical distribution of fatigue life and residual strength in composite materials is generalized and applied to (0/90/45/-45)s graphite/epoxy laminates. Load sequence effects are found to be caused by both the difference in residual strength when failure occurs (boundary effect) and the effect of previously applied loads (memory effect). The model allows the isolation of these two effects, and the estimation of memory effect magnitudes under dual fatigue loading levels. It is shown that the material memory effect is insignificant, and that correlations between predictions of the number of early failures agree with the verification tests, as do predictions of fatigue life and residual strength degradation under dual stress levels.

Yang, J. N.↗

Load sequence effects on graphite/epoxy /+, -35/2s laminates

Load sequence effects on composite material fatigue behavior are due to the difference in residual strength when fatigue occurs, or the 'boundary effect', and the 'material money effect' due to previous loads. The present model, which allows the isolation of the effects of memory from those of boundary, has been investigated through a test program for the case of /+, -35/2s graphite/epoxy laminates under high-low and low-high load sequences which generated statistical residual strength data. As predicted by the model, the memory effect is present and a good correlation is obtained between test results and the theoretical predictions for both median residual strength and the expected percentage of fatigue failures under dual loading. It is noted, however, that the statistical dispersion of the residual strength test results is much smaller than that of the static ultimate strength.

Yang, J. N.↗

Diffusion Quantum Monte Carlo Calculation of the Austenite and Martensite Phases of NiTi

NiTi is a promising material for smart and active technologies due to its exhibition of the shape memory effect, superelasticity, and biocompatibility. The shape memory effect is tied to the reversible transition between the austenite and martensite phases. A major research direction is to alloy NiTi with Zr, Hf, Pd, Pt, etc., in order to tune the martensitic transition temperature (MTT). Modeling the MTT from first principles is challenging because the lattice dynamics is complicated by anharmonicity and various low-energy structures. Using density functional theory, the energy difference between the austenite and martensite phases of NiTi varies by up to 100 meV/atom depending on the choice of density functional, which is of the same order of the energy difference itself. Consequently, free energy calculations with different functionals can result in estimates of the MTT that vary by several hundred K. Using diffusion quantum Monte Carlo, we calculated the energy difference between the B2 and B19' structures of NiTi to be 70.9 +- 2.5 meV/atom.

Kevin K Ly↗

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Phillips, Thomas A.↗

Extraction technique for the determination of oxygen-18 in water using preevacuated glass vials

The need for a rapid, inexpensive technique for routine 18O/16O extraction from water has arisen recently through applications in the medical sciences and in hydrology. The traditional experimental technique for determining the oxygen isotope composition of water, the CO2-H2O equilibration method, is tedious, time consuming, and involves the use of custom-made glass apparatus. Furthermore, because of potential memory effects from one sample to the next, the glassware needs to be thoroughly cleaned between runs. A few attempts have been made to improve upon the method. Attempts to analyze water directly in the source of the mass spectrometer produced large memory effects and questionable results. Commercially available apparatus for automated extraction of 18O/16O from water is generally prohibitively expensive and often is designed to interface only with the manufacturer's own mass spectrometer. The method described in this paper utilizes inexpensive, off-the-shelf, preevacuated, glass vials. Preevacuated vials have been used by others for the isotopic analysis of breath CO2 and are well tested. The vials can be purchased in bulk from scientific apparatus suppliers at a relatively low cost. These are coupled with a simplified extraction line consisting of a stainless steel syringe needle and a glass cold trap. Vials are filled with CO2 and H2O and shaken in a constant-temperature water bath for at least 90 min. Since the vials are discarded after use, no cleaning is necessary, essentially eliminating any memory effect. Reproducibility is generally better than +/- 0.05%. The only reagents required are gaseous CO2 for equilibration, a dry ice/alcohol mixture for trapping water, and liquid nitrogen for transferring the CO2.

NASA Discipline Number 52-10↗

A turbulence model for nonequilibrium adverse pressure gradient flows

This paper presents a method for calculating compressible adverse pressure gradient boundary layers by using an algebraic eddy viscosity turbulence model that has been modified for variable pressure gradient and turbulence memory effects. The pressure gradient corrections are based on previous incompressible data correlations. Several methods for including the effects of turbulence memory are evaluated. A new lag model, which gives good agreement with available experimental data, is developed. Finally, a correlation is developed for the lag length parameter employed in the model as a function of the known experimental flow variables.

Horstman, C. C.↗

Quantification of the memory imprint effect for a charged particle environment

The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAMs are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.

Bhuva, B. L.↗

Normal and abnormal turbulent transport in a stratified medium

The influences of memory effects, coupling between velocity and temperature fluctuations and tensorial transport properties on momentum and heat transfers in turbulent flow which do not follow the Boussinesq relation are examined. It is shown that the memory effect, represented by the Lagrangian of the velocity gradients, can account for the decoupling between the flux and the gradient, while the tensorial properties of the transport coefficients allow a normal Boussinesq-type transfer with memory and anomalous counter-gradient or gradient-less transport.

Tchen, C.-M.↗

Low Temperature Creep of Hot-Extruded Near-Stoichiometric NiTi Shape Memory Alloy: Effect of Thermal Cycling - Part 2

This paper is the first report on the effect prior low temperature creep on the thermal cycling behavior of NiTi. The isothermal low temperature creep behavior of near-stoichiometric NiTi between 300 and 473 K was discussed in Part I. The effect of temperature cycling on its creep behavior is reported in the present paper (Part II). Temperature cycling tests were conducted between either 300 or 373 K and 473 K under a constant applied stress of either 250 or 350 MPa with hold times lasting at each temperature varying between 300 and 700 h. Each specimen was pre-crept either at 300 or at 473 K for several months under an identical applied stress as that used in the subsequent thermal cycling tests. Irrespective of the initial pre-crept microstructures, the specimens exhibited a considerable increase in strain with each thermal cycle so that the total strain continued to build-up to 15 to 20 percent after only 5 cycles. Creep strains were immeasurably small during the hold periods. It is demonstrated that the strains in the austenite and martensite are linearly correlated. Interestingly, the differential irrecoverable strain, in the material measured in either phase decreases with increasing number of cycles, similar to the well-known Manson-Coffin relation in low cycle fatigue. Both phases are shown to undergo strain hardening due to the development of residual stresses. Plots of true creep rate against absolute temperature showed distinct peaks and valleys during the cool-down and heat-up portions of the thermal cycles, respectively. Transformation temperatures determined from the creep data revealed that the austenitic start and finish temperatures were more sensitive to the pre-crept martensitic phase than to the pre-crept austenitic phase. The results are discussed in terms of a phenomenological model, where it is suggested that thermal cycling between the austenitic and martensitic phase temperatures or vice versa results in the deformation of the austenite and a corresponding development of a back stress due to a significant increase in the dislocation density during thermal cycling.

Raj, S. V.↗

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗

The NANOGrav 11 yr data set: Limits on Gravitational Wave Memory

The mergers of supermassive black hole binaries (SMBHBs) promise to be incredible sources of gravitational waves (GWs).While the oscillatory part of the merger gravitational waveform will be outside the frequency sensitivity range of pulsar timing arrays, the nonoscillatory GW memory effect is detectable. Further, any burst of GWs will produce GW memory, making memory a useful probe of unmodeled exotic sources and new physics. We searched the North American Nanohertz Observatory for Gravitational Waves (NANOGrav) 11 yr data set for GW memory. This data set is sensitive to very low-frequency GWs of ∼3 to 400 nHz (periods of ∼11 yr–1 month). Finding no evidence for GWs, we placed limits on the strain amplitude of GW memory events during the observation period. We then used the strain upper limits to place limits on the rate of GW memory causing events. At a strain of 2.5 × 10−14, corresponding to the median upper limit as a function of source sky position, we set a limit on the rate of GW memory events at <0.4 yr−1. That strain corresponds to an SMBHB merger with reduced mass of ηM ~2 × 1010Mmoonand inclination of ι = π/3 at a distance of 1 Gpc. As a test of our analysis, we analyzed the NANOGrav 9 yr data set as well. This analysis found an anomolous signal, which does not appear in the 11 yr data set. This signal is not a GW, and its origin remains unknown.

K Aggarwal↗

VISCEL: A general-purpose computer program for analysis of linear viscoelastic structures (user's manual), volume 1

This program, an extension of the linear equilibrium problem solver ELAS, is an updated and extended version of its earlier form (written in FORTRAN 2 for the IBM 7094 computer). A synchronized material property concept utilizing incremental time steps and the finite element matrix displacement approach has been adopted for the current analysis. A special option enables employment of constant time steps in the logarithmic scale, thereby reducing computational efforts resulting from accumulative material memory effects. A wide variety of structures with elastic or viscoelastic material properties can be analyzed by VISCEL. The program is written in FORTRAN 5 language for the Univac 1108 computer operating under the EXEC 8 system. Dynamic storage allocation is automatically effected by the program, and the user may request up to 195K core memory in a 260K Univac 1108/EXEC 8 machine. The physical program VISCEL, consisting of about 7200 instructions, has four distinct links (segments), and the compiled program occupies a maximum of about 11700 words decimal of core storage.

Gupta, K. K.↗