Tl2Ir2O7: A Pauli Paramagnetic Metal, Proximal to a Metal Insulator Transition
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99 GENERAL AND MISCELLANEOUS↗
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Spinodal electronic phase separation during insulator-metal transitions
Electronic phase transitions such as insulator-metal transitions are common in strongly correlated systems. Here, using a combination of thermodynamic linear-stability analysis and phase-field simulations and employing VO 2 as a prototypical example, we predict that an insulator-metal transition driven by photoexcitation may involve an intermediate, modulated charge density state with a temperature-dependent characteristic wavelength. It is shown that such an intermediate two-phase electronic state is formed through a spinodal mechanism and that its formation can be generic for insulator-metal transitions driven by fast stimuli. This transient electronic phase separation is expected to stimulate future experimental and computational efforts.
36 MATERIALS SCIENCE↗
Metal–insulator transition in composition-tuned nickel oxide films
Abstract Thin films of the solid solution Nd 1 − x La x NiO 3 are grown in order to study the expected 0 K phase transitions at a specific composition. We experimentally map out the structural, electronic and magnetic properties as a function of x and a discontinuous, possibly first order, insulator–metal transition is observed at low temperature when x = 0.2. Raman spectroscopy and scanning transmission electron microscopy show that this is not associated with a correspondingly discontinuous global structural change. On the other hand, results from density functional theory (DFT) and combined DFT and dynamical mean field theory calculations produce a 0 K first order transition at around this composition. We further estimate the temperature-dependence of the transition from thermodynamic considerations and find that a discontinuous insulator–metal transition can be reproduced theoretically and implies a narrow insulator–metal phase coexistence with x . Finally, muon spin rotation ( µ SR) measurements suggest that there are non-static magnetic moments in the system that may be understood in the context of the first order nature of the 0 K transition and its associated phase coexistence regime.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spin-orbit-controlled metal–insulator transition in Sr 2 IrO 4
In the context of correlated insulators, where electron–electron interactions (U) drive the localization of charge carriers, the metal–insulator transition is described as either bandwidth- or filling-controlled. Motivated by the challenge of the insulating phase in Sr 2 IrO 4 , a new class of correlated insulators has been proposed, in which spin–orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled j eff = 1/2 doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, because previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. Here, we overcome this challenge by employing multiple substituents that introduce well-defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr 2 Ir 1-x T x O 4 (T = Ru, Rh) by angle-resolved photoemission spectroscopy, combined with ab initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr 2 IrO 4 . Most importantly, we estimate the critical value for SOC in this system to be λ c = 0.42 ± 0.01 eV, and provide the first demonstration of a spin–orbit-controlled metal–insulator transition.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Predicting the onset of metal-insulator transitions in transition metal oxides-A first step in designing neuromorphic devices.
Several transition metal oxides, including La1-xSrxCoO3, are promising materials to realize resistive switching devices for neuromorphic applications, as they can undergo a metal-to-insulator transition (MIT) upon small perturbations to their electronic structure. Here, we focus on the MIT induced by varying the oxygen vacancy concentration, and we propose a model to predict the required electrical bias, based on three fundamental quantities: the vacancy formation energy, the permanent polarization in the material, and its dielectric constant. We obtain these quantities using first-principles electronic structure calculations, and we discuss strategies to minimize the electrical bias which may be adopted experimentally to design and optimize neuromorphic devices.
Zhang, Shenli↗
Electronic energy gap closure and metal-insulator transition in dense liquid hydrogen
Here, using quantum Monte Carlo (QMC) calculations, we investigate the insulator-metal transition observed in liquid hydrogen at high pressure. Below the critical temperature of the transition from the molecular to the atomic liquid, the fundamental electronic gap closure occurs abruptly, with a small discontinuity reflecting the weak first-order transition in the thermodynamic equation of state. Above the critical temperature, molecular dissociation sets in while the gap is still open. When the gap closes, the decay of the off-diagonal reduced density matrix shows that the liquid enters a gapless, but localized, phase: there is a crossover between the insulating and the metallic liquids. Compared to different density functional theory (DFT) functionals, our QMC calculations provide larger values for the fundamental gap and the electronic density of states close to the band edges, indicating that optical properties from DFT potentially benefit from error cancellations.
36 MATERIALS SCIENCE↗
Electron Doping-Induced Metal–Insulator Transition in LaNiO 3 and Memory Devices
LaNiO 3 (LNO) is the only rare-earth nickelate that does not undergo a temperature-driven insulator-metal transition. Here, we report the successful deposition of epitaxial LNO thin films on LaAlO 3 substrates by a chemical solution deposition method. We report a metal-insulator transition driven by electron doping from hydrogen using catalytic Pd electrodes. A series of in-plane devices with LNO thin films and Pd-Au as the two working terminals were designed and fabricated by photolithography. Further, we report their resistance switching behavior and synaptic multiresistance states under voltage pulses. The results demonstrate the universality of electron doping-driven phase transitions in the rare-earth nickelates and their relevance to emerging memory and computing technologies.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices
Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. Here we report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of subdominant interaction parameters.
2-dimensional systems↗
Spin-orbital liquids and insulator-metal transitions on the pyrochlore lattice
The two orbital Hubbard model, with the electrons additionally coupled to a complex magnetic background, arises in the pyrochlore molybdates. The background involves local moments Hund's coupled to the electrons, driving double exchange ferromagnetism, and antiferromagnetic (AF) tendency arising from competing superexchange. The key scales include the Hubbard repulsion and the superexchange, both of which can be tuned in these materials. They control the phase transition from a ferromagnetic metal to a spin glass metal and then to a spin glass (Mott) insulator. We provide a comprehensive description of the ground state of this model using an unrestricted Hartree-Fock scheme implemented via a simulated annealing procedure and establish the metal-insulator transition line for varying Hubbard interaction and superexchange. The electrons see an effective disorder, due to orbital frustration, already in the ferromagnetic phase. The disorder is further enhanced by antiferromagnetic coupling and the resulting magnetic disorder. As a result, increasing AF coupling shifts the metal-insulator transition to lower Hubbard interaction and gives it an additional "Anderson" character. In conclusion, we provide detailed results on the magnetic and orbital correlations, the density of states, and the optical conductivity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spontaneous Supercrystal Formation During a Strain‐Engineered Metal–Insulator Transition
Abstract Mott metal–insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next‐generation energy‐efficient electronics. A previously unknown, hierarchically ordered, and anisotropic supercrystal state is reported and its intrinsic formation characterized in‐situ during a Mott transition in a Ca 2 RuO 4 thin film. Machine learning‐assisted X‐ray nanodiffraction together with cryogenic electron microscopy reveal multi‐scale periodic domain formation at and below the film transition temperature ( T Film ≈ 200–250 K) and a separate anisotropic spatial structure at and above T Film . Local resistivity measurements imply an intrinsic coupling of the supercrystal orientation to the material's anisotropic conductivity. These findings add a new degree of complexity to the physical understanding of Mott transitions, opening opportunities for designing materials with tunable electronic properties.
Gorobtsov, Oleg Yu.↗
Generation of Tunable Stochastic Sequences Using the Insulator–Metal Transition
Probabilistic computing is a paradigm in which data are not represented by stable bits, but rather by the probability of a metastable bit to be in a particular state. The development of this technology has been hindered by the availability of hardware capable of generating stochastic and tunable sequences of “1s” and “0s”. The options are currently limited to complex CMOS circuitry and, recently, magnetic tunnel junctions. Here, we demonstrate that metal–insulator transitions can also be used for this purpose. We use an electrical pump/probe protocol and take advantage of the stochastic relaxation dynamics in VO 2 to induce random metallization events. A simple latch circuit converts the metallization sequence into a random stream of 1s and 0s. The resetting pulse in between probes decorrelates successive events, providing a true stochastic digital sequence.
97 MATHEMATICS AND COMPUTING↗
Two-orbital degeneracy lifted local precursor to a metal-insulator transition in MgTi2O4
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99 GENERAL AND MISCELLANEOUS↗
Phase-field model of coupled insulator-metal transitions and oxygen vacancy redox reactions
A predominant ubiquitous feature of strongly correlated oxides is the possible presence of oxygen vacancies, which has recently been shown to have profound effects on their electronic phase transitions. Here, we formulate a comprehensive phase-field model of intercoupled insulator-metal transitions and oxygen vacancy redox reactions, taking into account the valence electron state of oxygen vacancies. We use the model to study the voltage self-oscillation phenomenon in a prototypical strongly correlated oxide, VO 2 , and discover the mutual activation of the insulator-metal transition and oxygen vacancy redox reactions leading to systematic enhancement of the oscillation frequency. Furthermore, the established methodology and the mutual activation mechanism are generally applicable to understanding any insulator-metal transition dynamics in oxygen-deficient correlated oxides and improving the performance of voltage self-oscillation-based artificial neurons.
36 MATERIALS SCIENCE↗
Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography
In this work, we describe a method to control the insulator–metal transition at the LaAlO 3 /SrTiO 3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO 3 /SrTiO 3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Modeling of the metal–insulator transition temperature in alio-valently doped VO 2 through symbolic regression
The correlated semiconductor vanadium dioxide (VO 2 ) exhibits an insulator–metal transition (IMT) near room temperature, which is of interest in various device applications. Precise IMT temperature control is crucial to determine the use cases across technologies such as thermochromic windows, actuators for robots or neuronal oscillators. Doping the cation or anion sites can modulate the IMT by several tens of degrees and control hysteresis. However, modeling the effects of control parameters (e.g., doping concentration, type of dopants) is challenging due to complex experimental procedures and limited data, hindering the use of traditional data-driven machine learning approaches. Symbolic regression (SR) can bridge this gap by identifying nonlinear expressions connecting key input parameters to target properties, even with small data sets. In this work, we develop SR models to capture the IMT trends in VO 2 influenced by different dopant parameters. Using experimental data from the literature, our study reveals a dual nature of the IMT temperature with varying tungsten (W) doping concentrations. The symbolic model captures data trends and accounts for experimental variability, providing a complementary approach to first-principles calculations. Our feature-driven analysis across a broader class of dopants informs selectivity and provides qualitative insights into tuning phase transition properties valuable for neuromorphic computing and thermochromic windows.
36 MATERIALS SCIENCE↗
Purely electronic insulator-metal transition in rutile VO 2
Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films
Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.
25 ENERGY STORAGE↗
Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition
in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
2D materials↗