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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Highly Conductive Wire: Cu Carbon Nanotube Composite Ampacity and Metallic CNT Buckypaper Conductivity

NASA is currently working on developing motors for hybrid electric propulsion applications in aviation. To make electric power more feasible in airplanes higher power to weight ratios are sought for electric motors. One facet to these efforts is to improve (increase) the conductivity and (lower) density of the magnet wire used in motors. Carbon nanotubes (CNT) and composites containing CNT are being explored as a possible way to increase wire conductivity and lower density. Presented here are measurements of the current carrying capacity (ampacity) of a composite made from CNT and copper. The ability of CNT to improve the conductivity of such composites is hindered by the presence of semiconductive CNT (s-CNT) that exist in CNT supplies naturally, and currently, unavoidably. To solve this problem, and avoid s-CNT, various preferential growth and sorting methods are being explored. A supply of sorted 95 metallic CNT (m-CNT) was acquired in the form of thick film Buckypaper (BP) as part of this work and characterized using Raman spectroscopy, resistivity, and density measurements. The ampacity (Acm2) of the Cu-5volCNT composite was 3.8 lower than the same gauge pure Cu wire similarly tested. The lower ampacity in the composite wire is believed to be due to the presence of s-CNT in the composite and the relatively low (proper) level of longitudinal cooling employed in the test method. Although Raman spectroscopy can be used to characterize CNT, a strong relation between the ratios of the primary peaks GGand the relative amounts of m-CNT and s-CNT was not observed. The average effective conductivity of the CNT in the sorted, 95 m-CNT BP was 2.5 times higher than the CNT in the similar but un-sorted BP. This is an indication that improvements in the conductivity of CNT composites can be made by the use of sorted, highly conductive m-CNT.

wire↗
NASA NTRS2016

Carbon Nanotube Composite Ampacity and Metallic CNT Buckypaper Conductivity

NASA is currently working on developing motors for hybrid electric propulsion applications in aviation. To make electric power more feasible in airplanes higher power to weight ratios are sought for electric motors. One facet to these efforts is to improve (increase) the conductivity and (lower) density of the magnet wire used in motors. Carbon nanotubes (CNT) and composites containing CNT are being explored as a possible way to increase wire conductivity and lower density. Presented here are measurements of the current carrying capacity (ampacity) of a composite made from CNT and copper. The ability of CNT to improve the conductivity of such composites is hindered by the presence of semiconductive CNT (s-CNT) that exist in CNT supplies naturally, and currently, unavoidably. To solve this problem, and avoid s-CNT, various preferential growth and sorting methods are being explored. A supply of sorted 95 metallic CNT (m-CNT) was acquired in the form of thick film Buckypaper (BP) as part of this work and characterized using Raman spectroscopy, resistivity, and density measurements. The ampacity (Acm2) of the Cu-5volCNT composite was 3.8 lower than the same gauge pure Cu wire similarly tested. The lower ampacity in the composite wire is believed to be due to the presence of s-CNT in the composite and the relatively low (proper) level of longitudinal cooling employed in the test method. Although Raman spectroscopy can be used to characterize CNT, a strong relation between the ratios of the primary peaks GGand the relative amounts of m-CNT and s-CNT was not observed. The average effective conductivity of the CNT in the sorted, 95 m-CNT BP was 2.5 times higher than the CNT in the similar but un-sorted BP. This is an indication that improvements in the conductivity of CNT composites can be made by the use of sorted, highly conductive m-CNT.

yarns↗
NASA NTRS2021

Development and Characterization of Lightweight Durable Composite Conductor for Cables

Sustainable aviation in the form of electrified propulsion is likely to lead to an increase in the electrical assets contained within a single aircraft. As a result, it is desirable to design light weight conductor materials, thus reducing the payload of components like motor windings, low voltage signal cables, and transmission cables for data and power. One approach involves replacing pure Cu wiring with metalized CNT composites. This paper evaluates a framework for modeling overall conductivity and current sharing within such composites. Processing methods and parameters were refined. Select electroplated samples outperformed pure Cu in conductivity and had comparable ultimate tensile strengths. Tensile strengths are expected to improve with an additional densification step during processing. Acoustic emission data was used to predict the failure mechanism of the composite. Theories explaining improved intrinsic conductivity are discussed, with a focus on chemical and mechanical interactions at the Cu-CNT interface. These include Cu infiltration of CNT crevices, CNT oxidation, activity at defects in CNT walls, and the release of carbide-forming metals from CNT walls. Validating any or all these theories will require further work replicating data, collecting electron micrographs and conducting chemical analyses.

Metalized CNT↗
NASA NTRS1998

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.↗
NASA NTRS2016

Carbon Nanotube Patterning on a Metal Substrate

A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

Nguyen, Cattien V.↗
NASA NTRS1999

Transport in Carbon Nanotubes

This presentation discusses coupling between carbon nanotubes (CNT), simple metals (FEG) and a graphene sheet. The graphene sheet did not couple well with FEG, but the combination of a graphene strip and CNT did couple well with most simple metals.

Datta, S.↗
NASA NTRS2002

Nanomanipulation and Lithography for Carbon Nanotube Based Nondestructive Evaluation Sensor Development

Carbon nanotubes (CNTs) offer great potential for advanced sensor development due to the unique electronic transport properties of the material. However, a significant obstacle to the realization of practical CNT devices is the formation of reliable and reproducible CNT to metallic contacts. In this work, scanning probe techniques are explored for both fabrication of metallic junctions and positioning of singlewalled CNTs across these junctions. The use of a haptic force feedback interface to a scanning probe microscope is used to enable movement of nanotubes over micron length scales with nanometer precision. In this case, imaging of the surface is performed with light or intermittent contact to the surface. Increased tip-to-sample interaction forces are then applied to either create junctions or position CNTs. The effect of functionalization of substrate surfaces on the movement and tribology of the materials is also studied. The application of these techniques to the fabrication of CNT-based sensors for nondestructive evaluation applications is discussed.

Wincheski, Buzz↗
NASA NTRS2022

Novel Processing, Testing and Characterization of Copper/Carbon Nanotube (Cu/CNT) Yarn Composite Conductor

Sustainable electrified aircraft propulsion (EAP) is likely to lead to an increase in the electrical wiring contained within a single aircraft. Since the electrical resistance and mass of copper (Cu) conductors are associated with power losses, it is desirable to design high-conductivity lightweight conductor materials, thus reducing the mass of components like motor windings, low-voltage signal cables, and transmission cables for data and power to improve the overall energy efficiency. This paper describes a unique framework for manufacturing metalized carbon nanotube (CNT) composite conductors, measuring their electrical conductivity and strength, and modeling the overall conductivity and current sharing within such composites. Tensile testing was conducted on the processed composite conductor cables with the use of acoustic emission and electrical resistivity to determine stress-dependent-failure mechanisms while monitoring the electrical conductivity. The average of measured electrical conductivities of annealed Cu/CNT samples from batch 5 was greater than theoretical predictions by 9.8 percent and was also greater than the conductivity of pure annealed Cu by 4.8 percent and had comparable ultimate tensile strengths. Additionally, those Cu/CNT samples provide a 13.5% weight saving over current state of the art copper wires. Theories explaining improved intrinsic conductivity are discussed.

Metalized CNT↗
NASA NTRS2019

Applications of Atomic Layer Deposition in the Modification of Carbon Nanotubes

Atomic Layer Deposition (ALD) is a cost-effective nanoadditive-manufacturing technique that allows for conformal coating of substrates with atomic control in a benign temperature and pressure environment. Using paired precursor gases, thin films can be deposited on flat or textured surfaces ranging from glass, polymers, aerogels, and metals. Through atomic layer control, where single layers of atoms are deposited, fabrication of metal transparent films, nano-laminates, and coatings of nano-channels and pores is achievable. Reaction mechanisms in ALD are normally self-limiting, allowing for atomically accurate control of nanometer (nm) thicknesses. Therefore, high uniformity and precise thickness control make ALD an attractive process for the creation of novel nano-scale devices. Decreases in resistivity and density of electrical wire are needed to improve the function of electronics, electric motors and cables. Such improvements may be accomplished by adding ballistically conducting, metallic carbon nanotubes (CNT) to Cu. ALD was used to coat multiple substrates including CNT with Cu in an effort to make CNT-Cu composites which is more conductive and less dense than Cu. In addition, ALD can be used to as a method to deposit the catalyst layer seed layer for CNT growth using Ni. The ALD of copper metallic films can follow multiple reaction pathways depending on the ALD precursors used. For this work the reaction pathway was deposition of copper oxide and then post process annealing in a hydrogen environment. Copper(II) diacetylacetonate (Cu(acac)2) and ozone are used as precursors for copper oxide. As-deposited copper oxide films prepared at 180°C resulted in a growth per cycle of 1.0 A/cycle with low film resistivity.

Dwivedi, Vivek H.↗
NASA NTRS2013

Silicon/Carbon Nanotube Photocathode for Splitting Water

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

Amashukeli, Xenia↗
NASA NTRS2003

The Highly Robust Electrical Interconnects and Ultrasensitive Biosensors Based on Embedded Carbon Nanotube Arrays

We report on our recent breakthroughs in two different applications using well-aligned carbon nanotube (CNT) arrays on Si chips, including (1) a novel processing solution for highly robust electrical interconnects in integrated circuit manufacturing, and (2) the development of ultrasensitive electrochemical DNA sensors. Both of them rely on the invention of a bottom-up fabrication scheme which includes six steps, including: (a) lithographic patterning, (b) depositing bottom conducting contacts, (c) depositing metal catalysts, (d) CNT growth by plasma enhanced chemical vapor deposition (PECVD), (e) dielectric gap-filling, and (f) chemical mechanical polishing (CMP). Such processes produce a stable planarized surface with only the open end of CNTs exposed, whch can be further processed or modified for different applications. By depositing patterned top contacts, the CNT can serve as vertical interconnects between the two conducting layers. This method is fundamentally different fiom current damascene processes and avoids problems associated with etching and filling of high aspect ratio holes at nanoscales. In addition, multiwalled CNTs (MWCNTs) are highly robust and can carry a current density of 10(exp 9) A/square centimeters without degradation. It has great potential to help extending the current Si technology. The embedded MWCNT array without the top contact layer can be also used as a nanoelectrode array in electrochemical biosensors. The cell time-constant and sensitivity can be dramatically improved. By functionalizing the tube ends with specific oligonucleotide probes, specific DNA targets can be detected with electrochemical methods down to subattomoles.

Li, Jun↗
NASA NTRS2002

Mechanics of Nanotubes and Nanotube-Polymer Composites

CNT is a tubular form of carbon with diameter as small as 1 nm. Length: few nm to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties: Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Srivastava, Deepak↗
NASA NTRS2003

Multi-Scale Simulations of Carbon Nanotubes: Mechanics and Electronics

Carbon Nanotube (CNT) is a tubular form of carbon with diameter as small as 1 nm. Length: few mn to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties; Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Srivastava, Deepak↗
NASA NTRS2003

Metal Nanoparticle Catalysts for Carbon Nanotube Growth

Work this summer involved and new and unique process for producing the metal nanoparticle catalysts needed for carbon nanotube (CNT) growth. There are many applications attributed to CNT's, and their properties have deemed them to be a hot spot in research today. Many groups have demonstrated the versatility in CNT's by exploring a wide spectrum of roles that these nanotubes are able to fill. A short list of such promising applications are: nanoscaled electronic circuitry, storage media, chemical sensors, microscope enhancement, and coating reinforcement. Different methods have been used to grow these CNT's. Some examples are laser ablation, flame synthesis, or furnace synthesis. Every single approach requires the presence of a metal catalyst (Fe, Co, and Ni are among the best) that is small enough to produce a CNT. Herein lies the uniqueness of this work. Microemulsions (containing inverse micelles) were used to generate these metal particles for subsequent CNT growth. The goal of this summer work was basically to accomplish as much preliminary work as possible. I strived to pinpoint which variable (experimental process, metal product, substrate, method of application, CVD conditions, etc.) was the determining factor in the results. The resulting SEM images were sufficient for the appropriate comparisons to be made. The future work of this project consists of the optimization of the more promising experimental procedures and further exploration onto what exactly dictated the results.

Pierce, Benjamin F.↗
NASA NTRS2003

Modeling of Carbon Nanotube Schottky Barrier Reduction for Holes in Air

A model is proposed for the recently observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In air, the CNT is oxidized. The oxygen molecules on the CNT surface will attract negative charges and will be negatively charged. The negative charges on the solid surface generally enhance the surface dipole and provide stronger electron confinement within the solid. Thus the CNT work function will increase in air. Then the Schottky barrier for holes will have to increase in air according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming that there is a transition region between the electrode and the CNT, where an appreciable potential can drop. We assume that electrodes are placed at the side of the CNT and the contact is formed via the van der Waals interaction. Since the electrode surface is not atomically flat in practical situations, the contact will not be intimate and there will be a transition region before the usual metallic bulk structure starts. In this view, the Schottky barrier is determined not only by the work function difference of the electrodes and the CNT, but also by the potential drop in the transition region. The oxidation increases the potential drop and leads to a lower Schottky barrier for holes. This relation will be demonstrated in a graphical manner by expressing the potential drop as a function of CNT band bending. The potential drop is comparable to the CNT band gap when, e.g., the transition region is about a few Angstroms thick, the oxygen molecule coverage is about 10 %, and an oxygen molecule is charged by about 0.01-0.1 of the unit charge (1-10 % of molecules are charged). The proposed mechanism prevails for both p - and n-CNTs. The model consistently explains the CNT oxidation experiments reported so far.

Yamada, Toshishige↗
NASA NTRS2002

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Yamada, Toshishige↗
NASA NTRS2002

Modeling of Carbon Nanotube Schottky Barrier Modulation Due to Oxidation

A model is proposed for the experimentally observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In oxidation occurring in air, the negatively charged oxygen molecules on a material usually enhance the surface dipole and provide stronger electron confinement within the bulk. Thus the CNT electron affinity will increase in air. Then the Schottky barrier for holes will have to increase according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming there is a transition region between the electrode and the CNT and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules, leading to a lower Schottky barrier for holes. This mechanism prevails for both p- and n-CNTs. The model consistently explains all the reported CNT device experiments.

Yamada, Toshishige↗
NASA NTRS2003

Modeling of Schottky Barrier Modulation due to Oxidation at Metallic Electrode and Semiconducting Carbon Nanotube Junction

A model is proposed for the previously reported lower Schottky barrier for holes PHI (sub bH) in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. We assume that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower PHI(sub Bh) after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.

Yamada, Toshishige↗