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At least 19 records

Fabrication and Characterization of Brazed Joints for SiC-Metallic Systems Utilizing Refractory Metals

Metal to ceramic joining plays a key role for the integration of ceramics into many nuclear, ground and aero based technologies. In order to facilitate these technologies, the active metal brazing of silicon carbide (CVD beta-SiC, 1.1 mm thick, and hot-pressed alpha-SiC, 3 mm thick) to the refractory metals molybdenum and tungsten using active braze alloys was studied. The joint microstructure, composition, and microhardness were evaluated by optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and Knoop hardness testing. The braze alloys, Cusil-ABA, Ticusil and Copper-ABA, all formed sound joints with excellent wetting and chemical bonding with the SiC substrate. Despite the close thermal expansion match between the metal substrates and SiC, hairline cracks formed in alpha-SiC while beta-SiC showed no signs of residual stress cracking. The use of ductile interlayers to reduce the effect from residual stresses was investigated and joints formed with copper as an interlayer produced crack free systems utilizing both CVD and hot-pressed SiC.

Coddington, Bryan↗

Environmental tests of metallization systems for terrestrial photovoltaic cells

Seven different solar cell metallization systems were subjected to temperature cycling tests and humidity tests. Temperature cycling excursions were -50 deg C to 150 deg C per cycle. Humidity conditions were 70 deg C at 98% relative humidity. The seven metallization systems were: Ti/Ag, Ti/Pd/Ag, Ti/Pd/Cu, Ni/Cu, Pd/Ni/Solder, Cr/Pd/Ag, and thick film Ag. All metallization systems showed a slight to moderate decrease in cell efficiencies after subjection to 1000 temperature cycles. Six of the seven metallization systems also evidenced slight increases in cell efficiencies after moderate numbers of cycles, generally less than 100 cycles. The copper based systems showed the largest decrease in cell efficiencies after temperature cycling. All metallization systems showed moderate to large decreases in cell efficiencies after 123 days of humidity exposure. The copper based systems again showed the largest decrease in cell efficiencies after humidity exposure. Graphs of the environmental exposures versus cell efficiencies are presented for each metallization system, as well as environmental exposures versus fill factors or series resistance.

Alexander, P., Jr.↗

Non-noble metal based metallization systems

The results of efforts to produce a nonsilver metallization system for silicon photovoltaic cells are given. The system uses a metallization system based on molybdenum, tin, and titanium hydride. The initial work in this system was done using the MIDFILM process. The MIDFILM process attains a line resolution comparable to photoresist methods with a process related to screen printing. The surface to be processed is first coated with a thin layer of photopolymer material. Upon exposure to ultraviolet light through a suitable mask, the polymer in the non-pattern area crosslinks and becomes hard. The unexposed pattern areas remain tacky. The conductor material is then applied in the form of a dry mixture of metal which adheres to the tacky pattern area. The assemblage is then fired to ash the photopolymer and sinter the conductor powder.

Garcia, A., III↗

The Pd2Si - /Pd/ - Ni - solder plated metallization system for silicon solar cells

The rationale and application of a plated metal system, Pd2Si Pd - Ni - solder, is presented. This metallization system is particularly useful on shallow p-n junction solar cells. The advantages of such plated solar cell contacts are discussed. A process sequence for applying the metallization system is outlined. A specific example is presented, including chemical plating solution formulations and detailed process step descriptions. Electrical test data for solar cells metallized with the palladium-nickel-solder system are provided.

Coleman, M. G.↗

Metallization systems for semiconductor devices

Metals and systems for semiconductor devices metallization, evaluating conductivity, adhesion, contact resistance, deposition ease, electrochemical corrosion, reliability and stability

Terry, L. E.↗

Rapid correction of electron microprobe data for multicomponent metallic systems

This paper describes an empirical relation for the correction of electron microprobe data for multicomponent metallic systems. It evaluates the empirical correction parameter, a for each element in a binary alloy system using a modification of Colby's MAGIC III computer program and outlines a simple and quick way of correcting the probe data. This technique has been tested on a number of multicomponent metallic systems and the agreement with the results using theoretical expressions is found to be excellent. Limitations and suitability of this relation are discussed and a model calculation is also presented in the Appendix.

Gupta, K. P.↗

Investigation of contact metallization systems for solar cells

In conventional solar cells, evaporated Ti-Pd-Ag metallization system has been found reliable. However, for low cost terrestrial applications, its cost effectiveness may be questioned. Electroplated Ag and Cu have been investigated as replacements for evaporated Ag and have given results comparable to the evaporated Ti-Pd-Ag system.

Campbell, R. B.↗

Recent materials compatibility studies in refractory metal-alkali metal systems for space power applications.

Advanced Rankine and other proposed space power systems utilize refractory metals in contact with both single-phase and two-phase alkali metals at elevated temperatures. A number of recent compatibility experiments are described which emphasize the excellent compatibility of refractory metals with the alkali metals, lithium, sodium, and potassium, under a variety of environmental conditions. The alkali metal compatibilities of tantalum-, columbium-, molybdenum-, and tungsten-base alloys are discussed.

Harrison, R. W.↗

Perturbation theory of structure in classical liquid mixtures: Application to metallic systems near phase separation

The partial structure factors of classical simple liquid mixtures near phase separation are dicussed. The theory is developed for particles interacting through pair potentials, and is thus appropriate both to insulating fluids, and also to metallic systems if these may be described by an effective ion-ion pair interaction. The motivation arose from consideration of metallic liquid mixtures, in which resistive anomalies have been observed near phase separation. A mean field theory correction appropriate to 3 pair potential for the effects of correlated motions in the reference fluid is studied. The work is cast in terms of functions which are closely related to the direct correlation functions of Ornstein and Zernike. The results are qualitatively in accord with physical expectations. Quantitative agreement with experiment seems to turn on the selection of the hard core reference potential in terms of the metallic effective pair potential. It is suggested that the present effective pair potentials are perhaps not properly used to calculate the metallic structure factors at long wavelength.

Henderson, R. L.↗

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Lathrop, J. W.↗