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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Eocene-Oligocene Metamorphism, Fluid Flow and Deformation in the Ruby Mountains-East Humboldt Range Metamorphic Core Complex

Metamorphic core complexes are ubiquitous in collapsed orogens globally and play a primary role in crustal exhumation. Here, we investigate the metamorphic history of the Ruby Mountains-East Humboldt Range metamorphic core complex, Nevada, using petrochronology to understand how magmatism, metamorphism and deformation interact to modulate crustal rheology, and the timing of exhumation within the Sevier orogenic belt. Field study, microstructural analysis, thermobarometry and laser ablation split-stream monazite, titanite and allanite petrochronology of the mylonitic footwall were integrated to elucidate the pressure-temperature-time (P-T-t) evolution. Major-, trace-element and quartz-in-garnet thermobarometry show peak metamorphism occurred at 5.5–6 kbar and 600–650°C across the study area. Monazite and titanite U-(Th)-Pb petrochronology constrain this episode of metamorphism to 88–81 Ma with the structurally deepest samples yielding dates down to ca. 71 Ma. The preservation of peak metamorphic mineral assemblages indicates these rocks remained at near-peak temperature conditions into the Cenozoic. Cenozoic metamorphism occurred during a punctuated episode contemporaneous with the Great Basin ignimbrite flare up. All samples show a distinct 39–37 Ma population of monazite, titanite and allanite dates that correlate with the emplacement of quartz diorite and gabbro intrusions throughout the footwall. Accessory phases contain zoning textures in backscattered electron images that are consistent with fluid-mediated dissolution-reprecipitation reactions. The U-(Th)-Pb analyses from these zones yield 39–27 Ma dates interpreted as the timing of fluid flow. The results of this study elucidate the integrated importance of magmatism, melting and fluid flow in driving the coupled evolution of Late Cretaceous metamorphism within the Sevier hinterland and the subsequent Cenozoic metamorphic core complex development that exhumed the middle crust.

58 GEOSCIENCES↗
DOE OSTI2021

Interplay Between Crustal‐Scale Thrusting, High Metamorphic Heating Rates, and the Development of Inverted Thermal‐Metamorphic Gradients: Numerical Models and Examples From the Caledonides of Northern Scotland

Abstract Understanding the processes that produce high prograde metamorphic heating rates and the development of inverted metamorphic sequences in collisional thrust belts remains a fundamental challenge for tectonics and metamorphic petrology. New 2D finite element models of crustal‐scale thrusts with variable slip rates (10, 20, 35, 50 km Myr −1 ) are used to examine how thrust sheet emplacement contributes to these processes. In the models, average prograde heating rates of 31–118 °C Myr −1 are observed in the footwall, with maximum transient heating rates of ∼167 °C Myr −1 occurring at the highest slip rate. Also, thrust sheet emplacement produces an inverted thermal gradient in the model footwall. At slip rates of 10 km Myr −1 , heating magnitudes >200 °C are observed >7 km structurally beneath the thrust plane. At slip rates of 20–50 km Myr −1 , models produce thermal penetration depths of 4–5 km for similar heating magnitudes. Petrologically determined heating rates for thrust footwalls in the Scandian orogenic wedge of northern Scotland mostly yield rates consistent with model results (10–230 °C Myr −1 ). The model‐derived magnitude of inverted thermal gradients is also similar to those indicated in texturally determined deformation temperature transects across the Scandian orogenic wedge (100 °C–180 °C). Combined, these results indicate that high heating rates can be produced by fault slip at typical plate velocities. Additionally, this implies that crustal‐scale thrusts are likely to produce inverted metamorphic sequences in most systems, provided that P‐T conditions during slip allow for metamorphic or recrystallization processes that would preserve evidence for such features.

Thigpen, J. Ryan↗
DOE OSTI2021

Graded Buffer Bragg Reflectors with High Reflectivity and Transparency for Metamorphic Optoelectronics

A graded buffer Bragg reflector (GBBR) is a bifunctional device component that provides the reflection of a distributed Bragg reflector and the adjustable lattice constant of a compositionally graded buffer. Prior work showed that these properties can be combined with low threading dislocation density and high reflectivity. Here, we design and demonstrate complex GBBRs for specific metamorphic solar cell applications. We design buffers that provide (1) high reflectivity over a narrow bandwidth, for quantum well solar cells, (2) reflectivity over a wide bandwidth, for optically thin solar cells, and (3) low sidelobe reflection, for multijunction devices that demand low out-of-band reflection. Apodized and triple GBBRs are demonstrated, and transparency is always considered, requiring designs with carefully engineered material combinations. A GBBR with a reflection of 99% is demonstrated, as well as a triple GBBR that has over 80% reflection for 100?nm of the spectrum around 800?nm. We also analyze potential deviations in a baseline GBBR from that of a perfect DBR using transmission electron microscopy to analyze imperfections in the material and modeling to analyze the impact of imperfect refractive index data for lattice-mismatched AlGaInAs. Minimal crosshatch roughness and unintentional thickness variation occur throughout the buffer, which likely influences reflection slightly. Small deviations between the calculated AlGaInAs and utilized AlGaAs refractive index exist, giving methods for future GBBR improvement. While the GBBR designs are intended for metamorphic solar cells, the broad and high reflection may also be useful for other optoelectronic devices such as light-emitting diodes or lasers.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Metamorphic two-junction photovoltaic devices with removable graded buffers

The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Schulte, Kevin Louis↗
DOE OSTI2025

Testing convolutional neural network based deep learning systems: a statistical metamorphic approach

Machine learning technology spans many areas and today plays a significant role in addressing a wide range of problems in critical domains,i.e., healthcare, autonomous driving, finance, manufacturing, cybersecurity,etc. Metamorphic testing (MT) is considered a simple but very powerful approach in testing such computationally complex systems for which either an oracle is not available or is available but difficult to apply. Conventional metamorphic testing techniques have certain limitations in verifying deep learning-based models (i.e., convolutional neural networks (CNNs)) that have a stochastic nature (because of randomly initializing the network weights) in their training. In this article, we attempt to address this problem by using a statistical metamorphic testing (SMT) technique that does not require software testers to worry about fixing the random seeds (to get deterministic results) to verify the metamorphic relations (MRs). We propose seven MRs combined with different statistical methods to statistically verify whether the program under test adheres to the relation(s) specified in the MR(s). We further use mutation testing techniques to show the usefulness of the proposed approach in the healthcare space and test two CNN-based deep learning models (used for pneumonia detection among patients). The empirical results show that our proposed approach uncovers 85.71% of the implementation faults in the classifiers under test (CUT). Furthermore, we also propose an MRs minimization algorithm for the CUT, thus saving computational costs and organizational testing resources.

Computer Science↗
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2025

A Tale from the Trenches: Applying Metamorphic and Differential Testing to Bioinformatics Software

Metamorphic and differential testing have been proposed as best practices for testing software that is difficult to test, such as for programs in scientific domains. An assumption is that these approaches can be easily customized and applied to almost any domain. However, scientific software is often data-driven, and metamorphic relations may require significant domain knowledge to develop. In addition, tools are often written for ad-hoc experimentation by the scientists and often embed many assumptions about the importance and representation of different natural phenomena. In this paper, we present our experience applying both metamorphic and differential testing to a set of four computational biology tools that predict the growth of an organism. While our original goal was to evaluate these techniques to improve our system-level testing, we encountered multiple roadblocks along the way. Although we did find faults (some confirmed by developers), we also uncovered a set of challenges, including the considerable manual effort required for (a) defining domain-specific tests, (b) validating correctness, and (c) distinguishing between issues stemming from poor data and those arising from incorrect software.

Marsh, Alexis L [Iowa State University/Ames Labora↗
DOE OSTI2020

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗
DOE OSTI2022

Metamorphism-facilitated faulting in deforming orthopyroxene: Implications for global intermediate-depth seismicity

Significance The exothermic metamorphic reaction in orthopyroxene (Opx), a major component of oceanic lithospheric mantle, is shown to trigger brittle failure in laboratory deformation experiments under conditions where garnet exsolution takes place. The reaction product is an extremely fine-grained material, forming narrow reaction zones that are mechanically weak, thereby facilitating macroscopic faulting. Oceanic subduction zones are characterized by two separate bands of seismicity, known as the double seismic zone. The upper band of seismicity, located in the oceanic crust, is well explained by dehydration-induced mechanical instability. Our newly discovered metamorphism-induced mechanical instability provides an alternative physical mechanism for earthquakes in the lower band of seismicity (located in the oceanic lithospheric mantle), with no requirement of hydration/dehydration processes.

58 GEOSCIENCES↗
DOE OSTI2024

Fluid-Driven Mass Transfer During Retrograde Metamorphism and Exhumation of the UHP Western Gneiss Region Terrane, Norway

Dehydration reactions within subducted oceanic crust are important for fluid-mediated element transfer within the subducting plate and potentially to the mantle wedge. The effects of metamorphic reactions and fluid flow on element recycling that occur during retrogression and exhumation of subducted continental crust from mantle depths are poorly understood. We study two metabasite pods with fresh eclogite cores and retrogressed amphibolite-facies rims and surrounding host gneiss within the Western Gneiss Region (WGR), Norway, to better understand element mobility and mass transfer during exhumation of subducted continental crust. Bulk-rock data were collected from samples taken across the pod and into the host gneiss. Phengite breakdown in eclogite and epidote recrystallization in veins and/or gneiss within pod cores contributed large ion lithophile elements and REE to retrogressed eclogite closest to the pod cores. In gneiss hosting the pods, phengite and epidote breakdown provided fluid that mediated elemental transfer and redistribution to the pod rim or tail. Compared to the studied pod in the southern WGR, the pod in the northern WGR underwent higher P-T conditions, partial melting and higher strain rates. This resulted in the infiltration of external fluid farther into the pod interior from the rim and facilitated larger mass gain in trace elements in the amphibolite tail of the pod relative to fresh eclogite in the core. The results show clear evidence for retrogression dehydration reactions driving significant fluid-mediated element redistribution as observed on the outcrop scale during exhumation following ultrahigh-pressure metamorphism, which directly impacts element signatures within the exhuming crust.

58 GEOSCIENCES↗
DOE OSTI2022

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Abstract Realizing a large Landé g -factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g -factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g -factor engineering in semiconductor structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
DOE OSTI2024

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10 7 dislocations/cm 2 . The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗
DOE OSTI2022

Non-cratonic Diamonds from UHP Metamorphic Terranes, Ophiolites and Volcanic Sources

The discovery of diamonds in metamorphic rocks of continental affinities occurred shortly after the discovery of coesite in similar rocks. These important discoveries led to a revolution in our understanding of the subduction and exhumation of continental materials and the establishment of a new discipline, ultra-high-pressure metamorphism (UHPM). After these discoveries more ultra-high pressure (UHP) minerals were found and dozens of UHPM terranes were established. Diamond is a remarkable material which is chemically inert and stable over geological timescales making it the perfect “geological container” where gas, fluid, and solid inclusions can be preserved. Moreover, its presence is indicative of specific pressure and temperature conditions which implie subduction to a minimum depth of ~120 km. The inclusions trapped inside these diamonds can shed light on the composition, redox state, and evolution of the fluids related to UHPM diamond formation while the carbon isotope ratios of the diamond itself can inform us about the source of carbon. The purpose of this review is to provide a brief history on the discovery of microdiamonds starting with work that began in the mid-1960s in Kokchetav massif, Kazakhstan, through to the present day. Particular attention will be on more recent micro-diamond discoveries in the last decade. The current state of understating of the mechanisms of UPHM diamond formation, the misidentification of microdiamonds due to contamination from sample extraction/preparation, and the future of UHPM diamond research are discussed. The paper also considers the controversial topic of the occurrence of lonsdaleite within the population of microdiamonds from UHPM terranes as well as recently reported ophiolite- and volcanic-hosted diamonds.

58 GEOSCIENCES↗
DOE OSTI2025

Metamorphic Epitaxy Solutions for Thermophotovoltaic and Laser Power Conversion Applications

Metamorphic GaInAs enables photovoltaic devices optimized for a wide range of bandgaps between 0.35 and 1.41 eV. We have developed compositionally graded buffers made of GaInP and AlGaInAs to enable growth of these devices on GaAs substrates with low dislocation densities and high performance. We present results for devices grown on both graded buffer materials with device bandgaps in the range 0.58-1.41 eV and compare the benefits and drawbacks of each material system. These results enable high performance for applications such as thermophotovoltaics and optical power transmission using high power lasers.

III-V↗
DOE OSTI2025

SolAero 2020: III-V Metamorphic Graded Buffers (CRADA Final Report)

The effort by the National Renewable Energy Laboratory (NREL) for SolAero Technologies Corp (SolAero) will involve helping with four tasks: 1) Supporting the development, characterization, and optimization of metamorphic grades in III-V multi-junction solar cells, 2) Doping of III-V semiconductor materials and junctions, and 3) Incorporating strain balanced layers into solar cells, and 4) high efficiency germanium based solar cells.

14 SOLAR ENERGY↗