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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2018

Dimethylsilanediol (DMSD) Source Assessment and Mitigation on ISS: Estimated Contributions from Personal Hygiene Products Containing Volatile Methyl Siloxanes (VMS)

Dimethylsilanediol (DMSD) is a small organosilicon compound present in humidity condensate on the International Space Station. Aqueous DMSD originates from volatile methyl siloxane (VMS) compounds in the ISS cabin atmosphere. DMSD is not effectively removed by the WPA (Water Processor Assembly), requiring removal and replacement of both WPA Multifiltration (MF) Beds for an estimated resupply penalty of approximately 70 kg/year. Analyses indicate that WPA can handle DMSD if the concentration in the condensate can by reduced by fifty percent. Personal Hygiene Products (PHPs) used by crew are suspected to be a significant source of VMS. Source removal of VMS will be required to achieve a measurable impact to the DMSD concentration in the condensate. The inventory of total crew provisions for ISS was analyzed to identify silicon containing materials and products used for personal hygiene that emit VMS. Accounting for the wide range in mass of hygiene product applied to skin or hair, the frequency of application, the product selection, the number of crew using a given product, the range in silicon mass fraction of different products, and the potential vaporization of the product, the potential total VMS emissions from personal hygiene products for a crew of six on ISS were estimated. The total daily VMS emissions from PHPs estimate ranges from 261 to 1145 mg-Si per day, compared to total estimated VMS generation rates on ISS of 800 to 1500 mg-Si per day. The main sources of VMS were determined to be antiperspirants (173 to 696 mg-Si per day), skin lotions (63 to 248 mg-Si per day), wipes (25 to 124 mg-Si per day) and hair conditioner (0 to 69 mg-Si per day). Several siloxanes-free options are available for deodorants, wet wipes, lotions, and leave-in conditioners. These products are now being assessed for crew member use in future increments.

Muirhead, Dean L.↗
NASA NTRS1976

Production of solar-grade silicon from purified metallurgical silicon

The long-term goal of this work is to produce silicon of solar-grade quality at 3 x 10 to the 6th kg/y for less than $10/kg by, or before 1986. The approach is to improve and expand upon the technology used today to commercially produce metallurgical-grade silicon (MG-Si). This is currently being accomplished by using purer raw materials in the arc furnace process for producing MG-Si, by upgrading the furnace itself, and by unidirectionally solidifying the molten silicon exiting the furnace. Solar cells fabricated from partially purified MG-Si have shown average AM0 efficiencies in the range of 9-11%. Since further MG-Si purification yet remains possible, fabrication of cells of considerably higher conversion efficiency is deemed feasible.

Hunt, L. P.↗
NASA NTRS1975

Low cost processes for solar-grade silicon

Upgrading metallurgical grade silicon is being pursued in four associated areas in order to improve the purity of the normally 98% material. The first two work areas involve purification of raw materials entering the process in addition to upgrading the arc furnace itself. The second two areas of process upgrading comprise improving the purity of the silicon after it leaves the arc furnace by reactive gas blowing and unidirectional freezing. The best cell produced to date was fabricated from MG-Si that had been blown with an O2-Cl2 mixture, unidirectionally solidified, and 6-float-zone passed (to determine a base boron level of 0.04 ohm/cm). The cell showed a 10.7% AMO efficiency. In the other processes category, the use of silicates as a silicon source and of electrolysis as a process were studied. The best electrolytic process uses a 1000 C fused salt of silica in cryolite.

Hunt, L. P.↗
NASA NTRS1977

Solar silicon via improved and expanded metallurgical silicon technology

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

Hunt, L. P.↗
NASA NTRS1981

Multigrid simulation of asymptotic curved-duct flows using a semi-implicit numerical technique

Asymptotic flows inside curved ducts of rectangular as well as polar cross section are analyzed using the Navier-Stokes equations in terms of the axial velocity and vorticity and the cross-flow stream function. Numerical solutions of the three second-order coupled elliptic partial differential equations governing this flow are obtained efficiently using the coupled alternating-direction implicit (ADI) method as well as the multigrid strongly-implicit (SI) scheme. For the flow configuration studied, the ADI method is found to be more sensitive to the time steps used than is the SI scheme. Use of the multigrid-coupled-strongly-implicit (MG-SI) scheme makes it possible to efficiently obtain fine-grid solutions for configurations having strong secondary flow. It is shown that, for this asymptotic curved-duct flow, the similarity parameter of significance is the Dean's number K rather than the Reynolds number Re. Results are obtained for curved ducts with square cross sections for K up to 900, which here corresponds to Re = 9,000 for this internal flow configuration.

Ghia, K. N.↗