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At least 19 records

Shoulder fillet effects in strength distributions of microelectromechanical system components

The failure forces and fracture strengths of polysilicon microelectromechanical system (MEMS) components in the form of stepped tensile bars with shoulder fillets were measured using a sequential failure chain methodology. Approximately 150 specimens for each of four fillet geometries with different stress concentration factors were tested. The resulting failure force and strength distributions of the four geometries were related by a common sidewall flaw population existing within different effective stressed lengths. The failure forces, strengths, and flaw population were well described by a weakest-link based analytical framework. Finite element analysis was used to verify body-force based expressions for the stress concentration factors and to provide insight into the variation of specimen effective length with fillet geometry. Monte Carlo simulations of flaw size and location, based on the strength measurements, were also used to provide insight into fillet shape and size effects. The successful description of the shoulder fillet specimen strengths provides further empirical support for application of the strength and flaw framework in MEMS fabrication and design optimization.

36 MATERIALS SCIENCE↗

High-Fidelity Two-Qubit Gates Using a Microelectromechanical-System-Based Beam Steering System for Individual Qubit Addressing

In a large scale trapped atomic ion quantum computer, high-fidelity two-qubit gates need to be extended over all qubits with individual control. We realize and characterize high-fidelity two-qubit gates in a system with up to four ions using radial modes. The ions are individually addressed by two tightly focused beams steered using microelectromechanical system mirrors. We deduce a gate fidelity of 99.49(7)% in a two-ion chain and 99.30(6)% in a four-ion chain by applying a sequence of up to 21 two-qubit gates and measuring the final state fidelity. Our team characterizes the residual errors and discuss methods to further improve the gate fidelity towards values that are compatible with fault-tolerant quantum computation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A method for infrared sensing based on oscillating zero power microelectromechanical photoswitches

This paper presents an interesting new method for measuring infrared (IR) radiation using a micromechanical photoswitch (MP). By leveraging the event-driven narrowband IR detection capability of an MP, electrostatic pull-in, and a novel integrated thermomechanical feedback mechanism, we show for the first time a zero-standby power IR sensor that can not only detect above-threshold IR power levels (>600 nW), but also generates an oscillating electromechanical pulse waveform whose frequency is a function of the incident IR power level. The device design, the theoretical model for the proposed idea, and the experimental demonstration of the mechanism are shown. The unique capability of zero-standby power IR detection and frequency-tunable AC waveform generation from a constant input signal (IR radiation) without the need for additional electronics promises to enable new functionalities for such remote wake-up sensors beyond simply detection, with potential uses in microrobotics and low-power computing.

Rajaram, Vageeswar (ORCID:0000000199546844)↗

Tailoring the coefficient of thermal expansion of ternary nickel alloys through compositional control and non-contact measurements

The majority of microelectromechanical systems (MEMS) are made of silicon, however, future applications will be used in extreme environments, especially at elevated temperatures, and require materials with enhanced properties. Use of metal alloys in these applications will require microscale manufacturability, a balance of physical and mechanical properties and dimensional stability. Here in this paper, we emphasized dimensional stability by reducing the coefficient of thermal expansion (CTE) and present an optical non-contact method for measuring the thermal expansion of planar thin films. A combinatorial approach was employed to determine the CTE of nickel-molybdenum-tungsten (Ni-Mo-W) sputter deposited films over a range of compositions, and the addition of Mo and W is shown to significantly decrease and provide a route for tailoring the CTE with compositional control. Ni-Mo-W alloys were revealed to have CTE values ranging from 8–12 × 10 -6 /°C, matching that of commercial glass substrates that are employed in numerous MEMS devices.

36 MATERIALS SCIENCE↗

Fabrication of Freestanding Metallic Ni-Mo-W Microcantilever Beams With High Dimensional Stability

Recent studies have elucidated a promising balance of physical and mechanical properties of sputter deposited nickel-molybdenum-tungsten (Ni-Mo-W) films that have a unique nanotwinned microstructure and promising potential for use in high temperature microelectromechanical systems (MEMS). Here, the current study was undertaken to establish the feasibility of making nanotwinned Ni-Mo-W microcantilevers with standard micro- fabrication processing, to assess their dimensional stability, and to demonstrate the possibility of using nanotwinned Ni-Mo-W in metal MEMS devices. Deposition of Ni-Mo-W films in commercial sputtering chambers revealed a wide processing window for the formation of the requisite nanotwinned microstructure. Conventional photolithography and etchants were employed to shape blanket Ni-Mo-W films into freestanding microcantilever beams. Monitoring microcantilever deflections via interferometry provided a direct measure of residual stresses and overall dimensional stability. Heat treatments of 200° C and 400° C were used to mimic wafer bonding temperatures. At 400°C, microcantilevers exhibited modest stress relaxation, yielding beam deflection profiles on the nanometer scale and portending dimensional stability and control for future metal MEMS devices.

36 MATERIALS SCIENCE↗

Automated High‐Throughput Fatigue Testing of Freestanding Thin Films

Abstract Mechanical testing at small length scales has traditionally been resource‐intensive due to difficulties with meticulous sample preparation, exacting load alignments, and precision measurements. Microscale fatigue testing can be particularly challenging due to the time‐intensive, tedious repetition of single fatigue experiments. To mitigate these challenges, this work presents a new methodology for the high‐throughput fatigue testing of thin films at the microscale. This methodology features a microelectromechanical systems‐based Si carrier that can support the simultaneous and independent fatigue testing of an array of samples. To demonstrate this new technique, the microscale fatigue behavior of nanocrystalline Al is efficiently characterized via this Si carrier and automated fatigue testing with in situ scanning electron microscopy. This methodology reduces the total testing time by an order of magnitude, and the high‐throughput fatigue results highlight the stochastic nature of the microscale fatigue response. This manuscript also discusses how this initial capability can be adapted to accommodate more samples, different materials, new geometries, and other loading modes.

Barrios, Alejandro↗

Performance of multifunctional piezoelectric energy harvesting microgyroscopes with material degradation

Most microelectromechanical systems (MEMS) are made from brittle materials that are prone to cracking. Damage from the formation of cracks can occur anytime during the manufacturing process or due to mechanical loading of MEMS devices. Cracks can increase the structures flexibility and lead to changes in performance or total failure. Understanding the potential influences cracks in MEMS is necessary for the longevity of these systems. The energy harvesting microgyroscope studied in this work is susceptible to crack propagation in its silicon substrate and lead zirconate titanate piezoelectric patch. To this end, an electromechanical model is developed to capture the impacts of cracks on the performance of a damaged energy harvesting microgyroscope. Numerical methods are used to approximate the damage associated with distributed crack networks. Then, the static and dynamic responses of the damaged microgyroscope are analyzed for two possible multifunctional setups. Here, the current study revealed that cracks can significantly affect the static and dynamic behaviors of the microgyroscope energy harvester. Combinations of cracking and piezoelectric property degradation cause a decrease in the static pull-in voltage and shift the resonance frequencies of the system. Additionally, it is shown that the systems sensitivity to changes in the base rotation and energy harvesting capabilities vary widely depending on the severity of material degradation.

36 MATERIALS SCIENCE↗

Nonlinear modeling and performance analysis of cracked beam microgyroscopes

Cracks constitute a common structural defect in microelectromechanical systems that may arise during manufacturing, mechanical fatigue, or shock loading. Areas weakened by cracks increase the flexibility of the microstructure. Furthermore, depending on the crack severity, the increased flexibility can cause dramatic changes in the static and dynamic behaviors of electrically actuated MEMS. In this study, a numerical investigation of the depth and location of multiple edge cracks on the performance of beam microgyroscopes is conducted. Applying the Griffith strain energy release theorem for an edge crack, the vibrational characteristics of microgyroscopes with multiple cracks including the static deflection, natural frequencies, and mode shapes are studied analytically. Then, the differential quadrature method is employed to model the nonlinear dynamic behaviors of the cracked gyroscope system. Cracks initiated along the driving or sensing directions of the microgyroscope are found to have differing effects on its nonlinear dynamic response. This numerical study reveals that the onset of severe single cracks or a series of multiple cracks can significantly affect the sensitivity of the microgyroscope to base rotations and therefore leads to a degradation in the performance of the damaged MEMS sensor. This study also shows that a potential design approach for broadband microgyroscope systems manufactured with cracks can be proposed.

42 ENGINEERING↗

Three-Dimensional Microbatteries beyond Lithium Ion

Ubiquitous implementation of microelectronics in microelectromechanical systems requires stable power supplies and necessitates development of on-chip miniature power sources, such as microbatteries. However, conventional thin-film batteries exhibit limited surface area and sluggish diffusion kinetics with insufficient energy and power density. In contrast, three-dimensional (3D) beyond-lithium (sodium, zinc, aluminum, etc.) battery architectures can significantly enhance the areal energy and power and meanwhile maintain the low-cost mass production. Despite this, the future of beyond-lithium systems is being questioned as they each present shortcomings. In this Comment, we discuss scientific advancements in reaction kinetics control, electrochemical stability improvements, and reaction mechanism understandings in 3D beyond-lithium battery systems, and finally, call for intensive research effort to address the challenges and develop strategies that can pave the way toward their commercialization.

25 ENERGY STORAGE↗

Grain growth of nanocrystalline aluminum under tensile deformation: A combined in situ TEM and atomistic study

Nanocrystalline Al thin films have been strained in situ in a transmission electron microscope using two separate nanomechanical techniques involving a push-to-pull device and a microelectromechanical system (MEMS) device. Deformation-induced grain growth was observed to occur via stress-assisted grain boundary migration with extensive grain growth occurring in the necked region, indicating that the increase in local stress drives the boundary migration. Under applied tensile stresses close to the ultimate tensile strength of 450 MPa for a nanocrystalline Al specimen, measured boundary migration speeds are 0.2 – 0.7 nm s -1 for grains outside necked region and increases to 2.5 nm s -1 for grains within the necked region where the local estimated tensile stresses are elevated to around 630 MPa. By tracking grain boundary motion over time, molecular dynamics simulations showed qualitative agreement in terms of pronounced grain boundary migration with the experimental observations. The combined in situ observation and molecular dynamics simulation results underscore the important role of stress-driven grain growth in plastically deforming nanocrystalline metals, leading to intergranular fracture through predominant grain boundary sliding in regions with large localized deformation.

36 MATERIALS SCIENCE↗

Deciphering electrocatalysts with multimodal operando approaches

Here, the electrocatalytic processes of a copper catalyst during nitrate electroreduction are unveiled by correlated operando microscopy and spectroscopy. Catalysts are vital to the modern chemical industry, yet their development has largely relied on trial-and-error approaches. Optimizing catalysts requires a fundamental understanding of their structure–chemical property behaviour under operational conditions. However, operando characterization remains challenging, especially for reactions occurring in the complex and dynamic liquid environments of electrochemical systems. Over the past decade, the rapid development of in situ and operando environmental transmission electron microscopy (ETEM) and microelectromechanical system (MEMS)-based closed-cell holders, enabling environmental studies within the vacuum environment of transmission electron microscopy (TEM), has substantively advanced understanding of heterogeneous catalysis, notably for gas-phase reactions. In situ ETEM enables the direct observation of the catalyst evolution in terms of structure, morphology and chemical state at the nano-to-atomic scale, providing insights into their correlation with catalytic performance.

36 MATERIALS SCIENCE↗

Al 0.68 Sc 0.32 N Lamb wave resonators with electromechanical coupling coefficients near 10.28%

Aluminum scandium nitride (Al 1-x Sc x N/AlScN) (x = 0.32) Lamb wave resonators (LWR) have been fabricated and tested to demonstrate electromechanical coupling coefficients (k t 2 ) in excess of 10%. The resonators exhibited an average k t 2 and unloaded quality factor (Q u ) of 10.28% and 711, respectively, when calculated from the measured data. Applying the Butterworth Van-Dyke (BVD) model to the measured data enabled the extraction of the resonator's lumped element parameters to calculate the motional quality factor (Q m ), which neglects the contributions of the electrical traces. For the best measured resonator response, results from the BVD model showed a Q m of 1184 and a resulting figure-of-merit (FOM = K 2 ·Q m ) of 100. Comparing the response of similar AlScN and AlN resonators shows that the AlScN LWR has a significantly lower motional resistance (R m ), suggesting that AlScN has a strong potential for use in piezoelectric microelectromechanical oscillators.

42 ENGINEERING↗

High-throughput bend-strengths of ultra-small polysilicon MEMS components

The strength distribution of polysilicon bend specimens, approximately 10 μm in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.

Cook, Robert F. (ORCID:0000000304228881)↗

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗

Interferometric measurements of graphene-based membranes for micromechanical applications

Recent studies on piezoelectricity in 2D materials, such as graphene, have revealed their potential in multiple applications including microelectromechanical systems. Herein, we reveal piezoelectricity in few-layer graphene sheets deposited on amorphous Si 3 N 4 membranes. The response in the center of square membrane of 6.7 × 6.7 mm 2 size reaches about 14 nm at resonance and could be further enhanced by adjusting the composite structure. Resonance piezoelectric phenomena are fully consistent with the earlier piezoresponse force microscopy observations on free-standing piezoelectric graphene and open up a possibility of using 2D materials in micromechanical applications.

36 MATERIALS SCIENCE↗

Extraordinary frequency stabilization by resonant nonlinear mode coupling

Here, we show that a self-sustained oscillator with a frequency-selective element operating with two nonlinearly coupled modes can achieve a level of frequency stability well beyond that available using single-mode operation. The system of interest consists of a self-sustained oscillator based on a nonlinear primary mode that is coupled via an internal resonance to a passive secondary mode. Analysis of a generic model for this resonance with both additive and multiplicative noises reveals that the stability improvements accrue from two sources: (i) nonlinear frequency veering in the primary mode, a classical analogue to quantum-level repulsion, that eliminates amplitude-to-frequency noise conversion; and (ii) phase cleaning of the oscillator through an intrinsic phase constraint arising from synchronization of the modes. This latter effect can significantly reduce the effects of intrinsic frequency fluctuations of the primary mode, which are not accessible by any known strategy using single-mode operation. The theoretical predictions are supported by experimental measurements of a microelectromechanical systems-based oscillator that demonstrate a reduction in oscillator line width of several orders of magnitude. This approach offers a means of optimizing frequency stability in self-sustained oscillators, which has direct implications for applications in timekeeping and sensing.

36 MATERIALS SCIENCE↗

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗