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At least 19 records

Programmable Phase Selection between Altermagnetic and Noncentrosymmetric Polymorphs of MnTe on InP via Molecular Beam Epitaxy

This dataset contains DFT input and output files supporting the theoretical modeling in the associated publication (ACS Appl. Mater. Interfaces 2026, 18, 15654-15664). The calculations model the interfacial energetics of two MnTe polymorphs — NiAs-MnTe (hexagonal, alpha phase) and ZnS-MnTe (cubic, gamma phase) — on InP(111) substrates with two surface terminations: In-terminated InP(111)A and P-terminated InP(111)B. This gives four interface configurations: NiAs on In-terminated (experimentally observed), NiAs on P-terminated (computed for comparison), ZnS on In-terminated (computed for comparison), and ZnS on P-terminated (experimentally observed). The dataset is organized into four calculation types, each covering all four polymorph/termination combinations: (i) Slabs: Pristine MnTe/InP heterostructure slabs used to compute total energies and interface energy densities (Eint) for all four configurations, as reported in Fig. 6 of the main text. (ii) Disorder: Same slab geometries with a P_Te + Te_P antisite defect pair introduced near the interface, used to assess chemical intermixing effects on interface stability (Fig. S8, SI). (iii) Strain: Pristine slab calculations with in-plane lattice parameters strained by -1% and +1% relative to the InP lattice constant, used to evaluate strain-dependent interface energetics (Fig. S9, SI). (iv) Charge_Density: Single-point calculations on the full heterostructure, the isolated InP slab, and the isolated MnTe slab at fixed geometry, used to compute differential charge density plots showing interfacial charge accumulation and depletion as a function of surface termination (Fig. S10, SI). Each calculation folder contains INCAR, KPOINTS, POSCAR, CONTCAR, OUTCAR, and POTCAR_info.txt (PAW potential information, excluding the full POTCAR due to VASP licensing restrictions). The calculations were performed using VASP 6.4.3 with PBE exchange-correlation, PAW potentials, a Hubbard correction of Ueff = 5 eV on Mn d-states, and A-type AFM spin initialization.

36 MATERIALS SCIENCE↗

Tuning the magnetic properties of the spin-split antiferromagnet MnTe through pressure

The hexagonal antiferromagnet MnTe has attracted enormous interest as a prototypical example of a spin-compensated magnet in which the combination of crystal and spin symmetries lifts the spin degeneracy of the electron bands without the need for spin-orbit coupling, a phenomenon called nonrelativistic spin splitting (NRSS). Subgroups of NRSS are determined by the specific spin-interconverting symmetry that connects the two opposite-spin sublattices. In MnTe, this symmetry is rotation, leading to the subgroup with spin splitting away from the Brillouin zone center, often called altermagnetism. MnTe also has the largest spontaneous magnetovolume effect of any known antiferromagnet, implying strong coupling between the magnetic moment and volume. This magnetostructural coupling offers a potential knob for tuning the spin-splitting properties of MnTe. Here, we use neutron diffraction with in situ applied pressure to determine the effects of pressure on the magnetic properties of MnTe and further explore this magnetostructural coupling. We find that applying pressure significantly increases the Néel temperature, but decreases the ordered magnetic moment. We explain this as a consequence of strengthened magnetic exchange interactions under pressure, resulting in higher 𝑇 N , with a simultaneous reduction of the local moment of individual Mn atoms, described here via density functional theory. This reflects the increased orbital hybridization and electron delocalization with pressure. In conclusion, these results shed light on the competition between magnetic exchange interactions and the strength of individual magnetic moments and show that the magnetic properties of MnTe can be controlled by pressure, opening the door to improved properties for spintronic applications through tuning via physical or chemical pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on c -plane Al 2 O 3 substrates

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe] m [Bi2Te 3 ] n , which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi 2 Te 3 ] n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe - nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 ± 0.04 Å and 4.39 ± 0.04 Å, respectively - can be selectively grown on c-plane Al 2 O 3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In 2 Se 3 buffer layer, despite its lattice constant (4.02 Å) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi 2 Te 3 , sharing the same lattice constant (4.39 Å) with the ZB-WZ phase, fosters the NC phase. Furthermore, these discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

36 MATERIALS SCIENCE↗

Magnon gap tuning in lithium-doped MnTe

Data in this DOI includes: 1) Powder Diffraction at HFIR POWDER (HB-2A) of pure MnTe and 5%-lithium doped MnTe at various temperatures ranging from T = 4 - 360 K for pure MnTe and T = 4 - 290 K for 5% lithium doped MnTe. 2) Inelastic neutron scattering at ARCS of pure MnTe and 5% lithium doped MnTe at T = 10 K measured with incident energy Ei = 30 meV and 150 meV, and corresponding background files (i.e. empty can measurements)

diffraction↗

Interface, bulk and surface structure of heteroepitaxial altermagnetic α-MnTe films grown on GaAs(111)

Epitaxial MnTe films have recently seen a surge in research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural and chemical modifications. We report a detailed investigation of the synthesis of the altermagnet α-MnTe on GaAs(111), which reveals the bulk defect structure of this material, the mechanism by which it releases strain from the underlying substrate, and the impact of oxidation on its surface. X-ray diffraction measurements show that α-MnTe layers with thicknesses spanning 45 to 640 nm acquire lattice parameters different from bulk, mostly due to thermal strain caused by the substrate rather than strain from the lattice mismatch. Through high-resolution transmission electron microscopy (TEM) measurement, we then unveil a misfit dislocation array at the interface, revealing the mechanism by which lattice strain is relaxed. TEM also reveals a stacking fault in the bulk, occurring along a glide plane parallel to the interface. The combination of TEM with polarized neutron reflectometry measurements finally reveals the impact of oxidation on the chemistry of the surface of uncapped MnTe. Furthermore, or findings highlight the subtle role of epitaxy in altering the structure of α-MnTe, providing potential opportunities to tune the altermagnetic properties of this material.

Altermagnets↗

Magnon gap tuning in lithium-doped MnTe

Manganese telluride (MnTe) is a prospective platform for ultrafast carrier dynamics, spin-based thermoelectrics, and magnon-drag transport due to its unique electronic and magnetic properties. We use inelastic neutron scattering to study both pure and lithium-doped MnTe, focusing on the influence of doping in opening a magnon gap. We use neutron powder diffraction to determine critical exponents for the phase transition in both pure and Li-doped MnTe and complement this information with muon spin rotation/relaxation. In conclusion, the opening of the magnon gap and spin reorientation in Li-doped MnTe is mainly due to increased magnetic anisotropy along the [001] axis, a feature not present in pure MnTe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Superconducting Fourfold Fe(Te,Se) Film on Sixfold Magnetic MnTe via Hybrid Symmetry Epitaxy

Epitaxial Fe(Te,Se) thin films have been grown on various substrates but never been grown on magnetic layers. In this work, we report the epitaxial growth of fourfold Fe(Te,Se) film on a sixfold antiferromagnetic insulator, MnTe. The Fe(Te,Se)/MnTe heterostructure shows a clear superconducting transition at around 11 K, and the critical magnetic field measurement suggests the origin of the superconductivity to be bulk-like. Structural characterizations suggest that the uniaxial lattice match between Fe(Te,Se) and MnTe allows a hybrid symmetry epitaxy mode, which was recently discovered between Fe(Te,Se) and Bi 2 Te 3 . Furthermore, the Te/Fe flux ratio during deposition of the Fe(Te,Se) layer is found to be critical for its superconductivity. Now that superconducting Fe(Te,Se) can be grown on two related hexagonal platforms, Bi 2 Te 3 and MnTe, this result opens a new possibility of combining topological superconductivity of Fe(Te,Se) with the rich physics in the intrinsic magnetic topological materials (MnTe) n (Bi 2 Te 3 ) m family.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Time-resolved magneto-optical effects in the altermagnet candidate MnTe

α -MnTe is an antiferromagnetic semiconductor with above room temperature T N = 310 K, which is promising for spintronic applications. Recently, it was reported to be an altermagnet, containing bands with momentum-dependent spin splitting; time-resolved experimental probes of MnTe are, therefore, important both for understanding novel magnetic properties and potential device applications. Here, we investigate ultrafast spin dynamics in epitaxial MnTe(001)/InP(111) thin films using pump-probe magneto-optical measurements in the Kerr configuration. At room temperature, we observe an oscillation mode at 55 GHz that does not appear at zero magnetic field. Combining field and polarization dependence, we identify this mode as a magnon, likely originating from inverse stimulated Raman scattering. Magnetic field-dependent oscillations persist up to at least 335 K, which could reflect coupling to known short-range magnetic order in MnTe above T N . Additionally, we observe two optical phonons at 3.6 and 4.2 THz, which broaden and redshift with increasing temperature.

Gray, Isaiah↗

Dichotomous Temperature Response in the Electronic Structure of Epitaxially Grown Altermagnet MnTe

The altermagnet candidate MnTe has recently gained significant interest due to its unconventional magnetic ordering. One of the key features of altermagnetism is the momentum-dependent spin-split band and its temperaturedependent evolution. Yet a fully momentum-resolved experimental investigation, including out-of-plane direction, is still lacking. Here, we systematically investigate the electronic structure of epitaxially grown MnTe by using angle-resolved photoemission spectroscopy (ARPES). Our photon-energy-dependent ARPES data reveal significant out-of-plane dispersions consistent with previous theoretical calculations. More interestingly, we identify two distinct temperature-dependent electronic band structure evolutions at different out-of-plane momentum positions: momentum-dependent energy shifts at the nodal plane and substantial spectral weight suppression at the off-nodal plane. These findings may suggest the importance of considering both the itinerant and localized nature of the magnetic ordering and momentum-dependent interactions. Our work provides crucial insights into the complex correlation between momentum, temperature, and electronic structure in MnTe, contributing to a deeper understanding of altermagnetism.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Giant Spontaneous Magnetostriction in MnTe Driven by a Novel Magnetostructural Coupling Mechanism

A comprehensive x-ray scattering study of spontaneous magnetostriction in hexagonal MnTe, an antiferromagnetic semiconductor with a Néel temperature of T N = 307 K, is presented. The largest spontaneous magnetovolume effect known for an antiferromagnet is observed, reaching a volume contraction of |ΔV/V| > 7 × 10 -3 . This can be justified semiquantitatively by considering bulk material properties, the spatial dependence of the superexchange interaction, and the geometrical arrangement of magnetic moments in MnTe. The highly unusual linear scaling of the magnetovolume effect with the short-range magnetic correlations, beginning in the paramagnetic state well above T N , points to a novel physical mechanism, which is explained in terms of a trilinear coupling of the elastic strain with superposed distinct domains of the antiferromagnetic order parameter. Furthermore, this novel mechanism for coupling lattice strain to robust short-range magnetic order casts new light on magnetostrictive phenomena and also provides a template by which the exceptional magnetostrictive properties of MnTe might be realized in a wide range of other functional materials.

36 MATERIALS SCIENCE↗

Programmable Phase Selection between Altermagnetic and Noncentrosymmetric Polymorphs of MnTe on InP via Molecular Beam Epitaxy

Phase selecting nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet critical to targeting physical properties for specific applications. Here, we establish how phase selectivity of altermagnetic and noncentrosymmetric polymorphs of MnTe can be programmed by subtle changes to the surface of lattice-matched InP substrates in molecular beam epitaxy growth. Bulk altermagnetic MnTe is thermodynamically stable in the hexagonal NiAs-structure and is synthesized here on the polar (111)A surface (In-terminated) of InP, while the noncentrosymmetric, cubic ZnS-structure with wide band gap (>3 eV), which epitaxially matches III–V materials, is stabilized on the (111)B surface (P-terminated). Electron microscopy, X-ray photoemission spectroscopy, and reflection high-energy electron diffraction indicate that phase selection is triggered at the interface and proceeds along the growing surface. First-principles calculations suggest that interfacial termination and strain have a significant effect on the interfacial energy; stabilizing the NiAs polymorph on the In-terminated surface and the ZnS structure on the P-terminated surface. Here, selectively grown, high-quality, phase pure films of both MnTe polymorphs will enable our understanding of the novel properties of these materials, thereby facilitating their use in new applications ranging from spintronics to microelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stoichiometry–Induced Ferromagnetism in Altermagnetic Candidate MnTe

The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (T N ≈ 310 K) and semiconducting properties. The results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films are presented. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first-principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE-grown samples. Further, when combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗

Sensitivity of the MnTe valence band to the orientation of magnetic moments

An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A point of the Brillouin zone is derived. It is shown that whereas for the usual antiferromagnetic order (magnetic moments on the basal plane) band splitting at A is small, their out-of-plane rotation enhances the splitting dramatically (to about 0.5 eV). Here we propose extensions of recent experiments where such inversion of magnetocrystalline anisotropy has been observed in Li-doped MnTe to confirm this unusual sensitivity of a semiconductor band structure to magnetic order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Materials Data on MnTe by Materials Project

MnTe is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Mn2+ is bonded to six equivalent Te2- atoms to form a mixture of edge and corner-sharing MnTe6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Mn–Te bond lengths are 2.88 Å. Te2- is bonded to six equivalent Mn2+ atoms to form a mixture of edge and corner-sharing TeMn6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗

Materials Data on MnTe by Materials Project

MnTe is Molybdenum Carbide MAX Phase-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Mn2+ is bonded to six equivalent Te2- atoms to form a mixture of edge, face, and corner-sharing MnTe6 octahedra. The corner-sharing octahedral tilt angles are 51°. All Mn–Te bond lengths are 2.85 Å. Te2- is bonded in a 6-coordinate geometry to six equivalent Mn2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on MnTe by Materials Project

MnTe is Hausmannite-like structured and crystallizes in the monoclinic Pm space group. The structure is three-dimensional. there are four inequivalent Mn2+ sites. In the first Mn2+ site, Mn2+ is bonded to six Te2- atoms to form distorted MnTe6 octahedra that share corners with nine MnTe4 tetrahedra, edges with six MnTe6 octahedra, and a faceface with one MnTe4 tetrahedra. There are a spread of Mn–Te bond distances ranging from 2.76–3.15 Å. In the second Mn2+ site, Mn2+ is bonded to four Te2- atoms to form MnTe4 tetrahedra that share corners with nine MnTe6 octahedra, corners with two equivalent MnTe4 tetrahedra, edges with two equivalent MnTe4 tetrahedra, and a faceface with one MnTe6 octahedra. The corner-sharing octahedra tilt angles range from 53–61°. There are a spread of Mn–Te bond distances ranging from 2.61–2.71 Å. In the third Mn2+ site, Mn2+ is bonded to four Te2- atoms to form MnTe4 tetrahedra that share corners with nine MnTe6 octahedra, corners with two equivalent MnTe4 tetrahedra, edges with two equivalent MnTe4 tetrahedra, and a faceface with one MnTe6 octahedra. The corner-sharing octahedra tilt angles range from 53–61°. There are a spread of Mn–Te bond distances ranging from 2.61–2.70 Å. In the fourth Mn2+ site, Mn2+ is bonded to six Te2- atoms to form distorted MnTe6 octahedra that share corners with nine MnTe4 tetrahedra, edges with six MnTe6 octahedra, and a faceface with one MnTe4 tetrahedra. There are a spread of Mn–Te bond distances ranging from 2.77–3.14 Å. There are four inequivalent Te2- sites. In the first Te2- site, Te2- is bonded to four Mn2+ atoms to form a mixture of distorted corner and edge-sharing TeMn4 trigonal pyramids. In the second Te2- site, Te2- is bonded in a 6-coordinate geometry to six Mn2+ atoms. In the third Te2- site, Te2- is bonded to four Mn2+ atoms to form a mixture of distorted corner and edge-sharing TeMn4 trigonal pyramids. In the fourth Te2- site, Te2- is bonded in a 6-coordinate geometry to six Mn2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on MnTe by Materials Project

MnTe is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Mn2+ is bonded to four equivalent Te2- atoms to form corner-sharing MnTe4 tetrahedra. All Mn–Te bond lengths are 2.77 Å. Te2- is bonded to four equivalent Mn2+ atoms to form corner-sharing TeMn4 tetrahedra.

36 MATERIALS SCIENCE↗