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Results for “Mo-Si”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Fabrication and analysis of Mo-Si multilayers

Mo-Si multilayers have been fabricated in our laboratory for reflecting various soft X-ray wavelengths. Several normal incidence mirrors have been produced for a solar sounding rocket flight. Using properly shaped masks on 3-inch diameter dc magnetrons, we can produce multilayers of a similar size having a uniformity of better than +/- 3 percent over their entire surface area. Peak reflectance of the multilayers are as high as 42 percent at 171 A. Efforts are underway to deposit several layers of different period on top of the multilayers in order to attenuate the reflection of 304 A, a very bright line of He II in the solar spectrum. In the interim, we have made a Mo-Si mirror that reflects at 304 A. In addition to obtaining information on the solar corona at this wavelength, this will greatly reduce the effects of the He II line when its image is appropriately subtracted from others.

Shing, L.↗
NASA NTRS1981

Molybdenum-tin as a solar cell metallization system

The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

Boyd, D. W.↗
NASA NTRS1981

Amorphous metallizations for high-temperature semiconductor device applications

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Wiley, J. D.↗