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Results for “NIOBIUM NITRIDES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Monolithic Gyroidal Mesoporous Mixed Titanium–Niobium Nitrides

Mesoporous transition metal nitrides are interesting materials for energy conversion and storage applications due to their conductivity and durability. We present ordered mixed titanium–niobium (8:2, 1:1) nitrides with gyroidal network structures synthesized from triblock terpolymer structure-directed mixed oxides. The materials retain both macroscopic integrity and mesoscale ordering despite heat treatment up to 600 °C, without a rigid carbon framework as a support. Furthermore, the gyroidal lattice parameters were varied by changing polymer molar mass. This synthesis strategy may prove useful in generating a variety of monolithic ordered mesoporous mixed oxides and nitrides for electrode and catalyst materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Method of nitriding niobium to form a superconducting surface

A method of forming a delta niobium nitride .delta.-NbN layer on the surface of a niobium object including cleaning the surface of the niobium object; providing a treatment chamber; placing the niobium object in the treatment chamber; evacuating the chamber; passing pure nitrogen into the treatment chamber; focusing a laser spot on the niobium object; delivering laser fluences at the laser spot until the surface of the niobium object reaches above its boiling temperature; and rastering the laser spot over the surface of the niobium object.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Pulsed laser deposition of niobium nitride thin films

Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

High upper critical field in disordered niobium nitride superconductor

Superconducting Niobium Nitride thin films have been deposited on glass, aluminum nitride buffered glass, and oxidized silicon substrates by reactive DC magnetron sputtering at ambient substrate temperatures. The crystal structure of these thin films has been determined to be cubic fcc B1 structure by Glancing Incidence X-Ray Diffraction analysis. The superconducting transition temperatures of the thin films were measured to be greater than 11.6 K with a maximum of 13.4 K. The negative temperature coefficient of resistance observed in these thin films indicates the presence of disorder. Magneto-resistance measurements have been carried out on these thin films patterned into standard four probe geometry upto a maximum magnetic field of 12 T for two films and upto 15 T for the other two films. The dependence of transition temperature on the applied field is analyzed to estimate the upper critical field. The upper critical field for most of the films was estimated to exceed 35 T, while one of the most disordered films had an estimated upper critical field greater than 70 T.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

Nanomechanical and structural properties of NbN x films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbN x films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbN x films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbN x film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm 2 at 10.7 Pa N 2 pressure. X-ray diffraction showed NbN x films with peaks that correspond to δ-NbN cubic and β-Nb 2 N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbN x films with larger grain sizes.

Mamun, Md Abdullah Al↗
DOE OSTI2020

Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators

Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission lines. When deposited, NbN is usually sputtered, leaving room for concern about uniformity at small thicknesses. In this work, we present atomic layer deposition niobium nitride (ALD NbN) as an alternative technique that allows for precision control of deposition parameters such as film thickness, stage temperature, and nitrogen composition. Atomic-scale control over film thickness admits a high degree of uniformity for films 4–30 nm thick; control over deposition temperature gives rise to growth rate changes, which can be used to optimize film thickness and critical temperature. In order to charac- terize ALD NbN in the radio-frequency regime, we construct single-layer micro- wave resonators and test their performance as a function of stage temperature and input power. ALD processes can admit high resonator quality factors, with ≥ 43% of resonators above Q i = 10 6 , which in turn increase detector multiplexing capabilities. i Furthermore, we find critical temperatures in the range of 7.5–10.9 K that vary as a function of cycle count and deposition temperature.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2019

The Proximity and Josephson Effects in Niobium Nitride–Aluminum Bilayers

Highly disordered thin films of niobium nitride and the specific features of the proximity effect in NbN (S)–aluminum (N) bilayers with a large resistivity ratio, ρ{sub NbN}/ρ{sub Al}≫ 1, are studied. It is shown that magnetic screening and the critical current I{sub c} of such SN structures significantly increase compared to the S layer. The observed effect is associated with the induced superconductivity in the N layer due to the proximity effect. The Josephson effect is demonstrated in NbN/Al–NbN–NbN/Al variable thickness bridges made of such SN bilayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

We use room temperature ion beam assisted sputtering to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures, X-ray diffraction, and atomic force microscopy. Compared to reactive sputtering of niobium nitride, films sputtered in the presence of an ion beam show a remarkable increase in the superconducting critical temperature T c , while exhibiting lower sensitivity to nitrogen concentration during deposition. Thickness dependence of the superconducting critical temperature is comparable to films prepared by conventional methods at high substrate temperatures and is consistent with behavior driven by quantum size effects or weak localization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Critical Phase-Transition Current in Niobium Nitride Thin Films

Abstract—The effect of current and magnetic field on the transition to the superconducting state in niobium nitride thin films has been studied. The critical current dependences of the films on the temperature and magnetic field in the transition region have been determined. Within the framework of models of a normal domain and quasiparticle heating during viscous flow of a magnetic flux, the functional dependences of the critical current have been determined in close vicinity of the superconducting transition temperature. Using the theory of electron heating, we have determined the time of the electron energy relaxation. We also estimated the electron-phonon and the electron-electron inelastic scattering times, the diffusion coefficient of electrons, and heat transfer coefficient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Sub-picowatt resolution calorimetry with niobium nitride thin-film thermometer

High-resolution calorimetry has many important applications such as probing nanoscale thermal transport and studying the thermodynamics of biological and chemical systems. In this work, we demonstrated a calorimeter with an unprecedentedly high resolution at room temperature using a high-performance resistive thermometry material, niobium nitride (NbN{sub x}). Based on a theoretical analysis, we first showed that the heat flux resolution of a resistive-thermometry based calorimeter depends on the parasitic thermal conductance of the device and the temperature coefficient of resistance (TCR) of the thermometer, when the noise is limited by the Johnson noise. Based on this analysis, we then developed a calorimeter using NbN{sub x} as the thermometry material because it possesses both high TCR (∼0.67%/K) and a low thermal conductivity (k ∼ 1.1 W/m K). This calorimeter, when used with the modulated heating scheme, demonstrated an unprecedentedly high power resolution of 0.26 pW at room temperature. In addition, NbN{sub x} based resistive thermometry can also be extended to cryogenic temperature, where the TCR is shown to be significantly higher.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes

Superconducting nanowires have attracted considerable attention due to their unique quantum-mechanical properties, as well as their potential as next-generation quantum nanodevices, such as single-photon detectors, phase-slip (PS) qubits, and other hybrid structures. In this study, we present the results of one-dimensional (1D) superconductivity in nanowires fabricated by coating suspended carbon nanotubes with a superconducting thin niobium nitride (NbN) film. In the resistance-temperature characteristic curves, hallmarks of 1D superconductivity with PS events are observed with unconventional negative magnetoresistance. We also confirm that a crossover occurs between thermal and quantum PSs as the temperature is lowered.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The effect of heat treatment on structural and electronic properties of niobium nitride prepared by a thermal diffusion method

NbN coatings are prepared onto Nb substrate by thermal diffusion at high temperatures. The formation of NbN coating by thermal diffusion was studied in the range of 1250-1500 °C at constant nitrogen background gas pressure (1.3x10 -3 Pa) and processing time (180 min). The electronic and crystal structures of the NbN coatings were investigated. It was found that nitrogen diffuses into Nb forming the Nb-N solid solution (bcc) a-NbN phase that starts to appear above 1250 °C. Increasing the processing temperature gives richer a-phase concentration. Besides, X-ray absorption spectroscopy (XAS) was performed to study the electronic structure of the NbN layer. The results of the electronic structural study corroborate the crystal structural analysis. The Nb M 3,2 edge X-ray absorption spectroscopy (XAS) spectrum shows strong temperature dependence. At the highest processing temperature (1500 °C), the number of d holes increased. Nitrogen diffusion into Nb is resulting to increase electrostatic interaction between d electron and core hole. Lastly, for the studied conditions, only the α-NbN was observed in the X-ray diffraction patterns.

36 MATERIALS SCIENCE↗