Computer determination of symbolic state equations for nonlinear circuits.
Computer determination of symbolic state equations for nonlinear circuits using FORTRAN notation
Kobylarz, T. J.↗
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Simulation of linear and nonlinear circuits for symbolic analysis and transient response
Computerized FORTRAN equations simulation of linear and nonlinear circuits for symbolic analysis and transient response
Kobylarz, T. J.↗
Symbolic analysis of linear and nonlinear circuits utilizing digital computers
Topological symbolic analysis of circuits defined by topological constraints, utilizing digital computers
Kobylarz, T. J.↗
Circuit model for characterizing the nearly linear behavior of avalanche diodes in amplifier circuits
A nonlinear circuit model for avalanche diodes is proposed. The model was derived by assuming that the bias dependence of the elements in a known small-signal equivalent-circuit model for existing diodes arises in a manner consistent with the theory of an idealized Read-type device. The model contains a nonlinear R-L branch, a controlled source, and a linear depletion capacitance. The model is used in the nearly linear sense to predict intermodulation distortion and gain compression in avalanche diode amplifiers. Computed results for amplifiers with existing diodes are shown to be in good agreement with experiment.
Penfield, P., Jr.↗
Simulation of double layers in a model auroral circuit with nonlinear impedance
A reduced circuit description of the U-shaped potential structure of a discrete auroral arc, consisting of the flank transmission line plus parallel-electric-field region, is used to provide the boundary condition for one-dimensional simulations of the double-layer evolution. The model yields asymptotic scalings of the double-layer potential, as a function of an anomalous transport coefficient alpha and of the perpendicular length scale l(a) of the arc. The arc potential phi(DL) scales approximately linearly with alpha, and for alpha fixed phi (DL) about l(a) to the z power. Using parameters appropriate to the auroral zone acceleration region, potentials of phi (DPL) 10 kV scale to projected ionospheric dimensions of about 1 km, with power flows of the order of magnitude of substorm dissipation rates.
Smith, R. A.↗
A program for on-line analysis of nonlinear electronic circuits.
Program for on-line analysis of nonlinear electronic circuits written in AED language and operated on Compatible Time Sharing System
Evans, D. S.↗
CIRCAL - On-line circuit design.
On-line nonlinear circuit design, discussing computer program for evaluating performance resulting from modifications
COMPUTER METHOD↗
MTRAC - Computer program for transient analysis of circuits including magnetic cores
MTRAC program for transient analysis of circuits with square loop magnetic cores based on linearization of nonlinear circuit elements and Kirchhoff current law
Nitzan, D.↗
Theoretical and experimental studies of error in square-law detector circuits
Square law detector circuits to determine errors from the ideal input/output characteristic function were investigated. The nonlinear circuit response is analyzed by a power series expansion containing terms through the fourth degree, from which the significant deviation from square law can be predicted. Both fixed bias current and flexible bias current configurations are considered. The latter case corresponds with the situation where the mean current can change with the application of a signal. Experimental investigations of the circuit arrangements are described. Agreement between the analytical models and the experimental results are established. Factors which contribute to differences under certain conditions are outlined.
Stanley, W. D.↗
Monte Carlo Simulation of THz Multipliers
Schottky Barrier diode frequency multipliers are critical components in submillimeter and Thz space based earth observation systems. As the operating frequency of these multipliers has increased, the agreement between design predictions and experimental results has become poorer. The multiplier design is usually based on a nonlinear model using a form of harmonic balance and a model for the Schottky barrier diode. Conventional voltage dependent lumped element models do a poor job of predicting THz frequency performance. This paper will describe a large signal Monte Carlo simulation of Schottky barrier multipliers. The simulation is a time dependent particle field Monte Carlo simulation with ohmic and Schottky barrier boundary conditions included that has been combined with a fixed point solution for the nonlinear circuit interaction. The results in the paper will point out some important time constants in varactor operation and will describe the effects of current saturation and nonlinear resistances on multiplier operation.
East, J.↗
Passively forced current sharing among transistors
This application concerns a simple passive circuit that improves current balance in paralleled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive. A nonlinear circuit consisting of diodes and resistors generates a differential gate potential required to correct for unbalance while maintaining low losses over a range of current.
Niedra, Janis M.↗
Paralleling power MOSFETs in their active region: Extended range of passively forced current sharing
A simple passive circuit that improves current balance in parallelled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive are exhibited. A nonlinear circuit consisting of diodes and resistors generates the differential gate potential required to correct for unbalance while maintaining low losses over a range of current. Also application of a thin tape wound magnetic core to effect dynamic current balance is reviewed, and a simple theory is presented showing that for operation in the active region the branch currents tend to revert to their normal unbalanced values even if the core is not driven into saturation. Results of several comparative experiments are given.
Niedra, Janis M.↗
Recent advances in superconducting-mixer simulations
Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.
Withington, S.↗
Photonics
Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.
Source record↗
Negative Differential Resistance (NDR) frequency conversion with gain
The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.
Hwu, R. J.↗
Materials For Improved Josephson-Junction Devices
Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.
Vasquez, Richard P.↗
The HP 85192B EEFet3 GaAs FET Nonlinear Model Used in the High Efficiency Microwave Power Amplifier (HEMPA)
Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.
Sims, William Herbert, III↗
Theoretical and experimental investigation of a rectenna element for microwave power transmission
A microstrip measurement system has been designed to analyze packaged GaAs Schottky barrier diodes under small and large signal conditions. The nonlinear equivalent circuit parameters of the diode are determined using a small signal test method that analyzes the diode's scattering parameters at various bias levels. The experimental results of a 2.45 GHz diode are verified using a nonlinear circuit simulation program based on a multireflection algorithm. A 35 GHz rectenna has been built using a microstrip patch antenna and Ka-band mixer diode. The measured efficiency was 29 percent at 120 mW input power. A frequency selective surface is designed using an equivalent circuit model to reduce the second harmonic radiations for a 2.45 GHz rectenna. Theoretical results are found to be in fairly good agreement with experiments.
Mcspadden, James O.↗