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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Differential multi-MOSFET nuclear radiation sensor

Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.

Deoliveira, W. A.↗

Isolation Mounting for Charge-Coupled Devices

CCD's suspended by wires under tension. Remote thermoelectric cooling of charge coupled device allows vibration isolating mounting of CCD assembly alone, without having to suspend entire mass and bulk of thermoelectric module. Mounting hardware simple and light. Developed for charge-coupled devices (CCD's) in infrared telescope support adaptable to sensors in variety of environments, e.g., sensors in nuclear reactors, engine exhausts and plasma chambers.

Goss, W. C.↗

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗

Design reuse experience of space and hazardous operations robots

A comparison of design drivers for space and hazardous nuclear waste operating robots details similarities and differences in operations, performance and environmental parameters for these critical environments. The similarities are exploited to provide low risk system components based on reuse principles and design knowledge. Risk reduction techniques are used for bridging areas of significant differences. As an example, risk reduction of a new sensor design for nuclear environment operations is employed to provide upgradeable replacement units in a reusable architecture for significantly higher levels of radiation.

Oneil, P. Graham↗

Chemical Vapor Deposition Of Silicon Carbide

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Powell, J. Anthony↗

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗

Optical Sensors for Monitoring Gamma and Neutron Radiation

For safety and efficiency, nuclear reactors must be carefully monitored to provide feedback that enables the fission rate to be held at a constant target level via adjustments in the position of neutron-absorbing rods and moderating coolant flow rates. For automated reactor control, the monitoring system should provide calibrated analog or digital output. The sensors must survive and produce reliable output with minimal drift for at least one to two years, for replacement only during refueling. Small sensor size is preferred to enable more sensors to be placed in the core for more detailed characterization of the local fission rate and fuel consumption, since local deviations from the norm tend to amplify themselves. Currently, reactors are monitored by local power range meters (LPRMs) based on the neutron flux or gamma thermometers based on the gamma flux. LPRMs tend to be bulky, while gamma thermometers are subject to unwanted drift. Both electronic reactor sensors are plagued by electrical noise induced by ionizing radiation near the reactor core. A fiber optic sensor system was developed that is capable of tracking thermal neutron fluence and gamma flux in order to monitor nuclear reactor fission rates. The system provides near-real-time feedback from small- profile probes that are not sensitive to electromagnetic noise. The key novel feature is the practical design of fiber optic radiation sensors. The use of an actinoid element to monitor neutron flux in fiber optic EFPI (extrinsic Fabry-Perot interferometric) sensors is a new use of material. The materials and structure used in the sensor construction can be adjusted to result in a sensor that is sensitive to just thermal, gamma, or neutron stimulus, or any combination of the three. The tested design showed low sensitivity to thermal and gamma stimuli and high sensitivity to neutrons, with a fast response time.

Boyd, Clark D.↗

Measurement of Electromagnetic Properties of Lightning with 10 Nanosecond Resolution

Electromagnetic data recorded from lightning strikes are presented. The data analysis reveals general characteristics of fast electromagnetic fields measured at the ground including rise times, amplitudes, and time patterns. A look at the electromagnetic structure of lightning shows that the shortest rise times in the vicinity of 30 ns are associated with leader leader streamers. Lightning location is based on electromagnetic field characteristics and is compared to a nearby sky camera. The fields from both leaders and return strokes were measured and are discussed. The data were obtained during 1978 and 1979 from lightning strikes occuring within 5 kilometers of an underground metal instrumentation room located on South Baldy peak near Langmuir Laboratory, New Mexico. The computer controlled instrumentation consisted of sensors previously used for measuring the nuclear electromagnetic pulse (EMP) and analog-digital recorders with 10 ns sampling, 256 levels of resolution, and 2 kilobytes of internal memory.

Baum, C. E.↗

Ultrasonic thermometry using pulse techniques.

Ultrasonic pulse techniques have been developed which, when applied to inert gases, provide temperature measurements up to 8000 K. The response time can be less than 1 msec. This is a significant feature in studying shock-heated or combusting gases. Using a momentary contact coupling technique, temperature has been measured inside steel from 300 to 1500 K. Thin-wire sensors have been used above 2000 K in nuclear and industrial applications where conditions preclude the use of thermocouples, resistance devices, or optical pyrometers. At 2500 K, temperature sensitivity of 0.1% is obtained in Re wire sensors 5 cm long by timing five round trips with an electronic instrument that resolves the time interval between selected echoes to 0.1 microsec. Sensors have been operated at rotational speeds over 2000 rpm and in noisy environments. Temperature profiling of up to ten regions using only a single guided path or beam has also been accomplished.

Lynnworth, L. C.↗

Experimental Robot Position Sensor Fault Tolerance Using Accelerometers and Joint Torque Sensors

Robot systems in critical applications, such as those in space and nuclear environments, must be able to operate during component failure to complete important tasks. One failure mode that has received little attention is the failure of joint position sensors. Current fault tolerant designs require the addition of directly redundant position sensors which can affect joint design. The proposed method uses joint torque sensors found in most existing advanced robot designs along with easily locatable, lightweight accelerometers to provide a joint position sensor fault recovery mode. This mode uses the torque sensors along with a virtual passive control law for stability and accelerometers for joint position information. Two methods for conversion from Cartesian acceleration to joint position based on robot kinematics, not integration, are presented. The fault tolerant control method was tested on several joints of a laboratory robot. The controllers performed well with noisy, biased data and a model with uncertain parameters.

Aldridge, Hal A.↗

Thin Film Sensors for Fission Surface Power

Physical sensors fabricated with thin films could result a significant savings in space and weight with improved reliability for monitoring the long-term operation of fission surface power systems. Thin film sensors of 1 µm or less are attractive for FSP applications because they can be incorporated onto component surfaces with minimal machining and the additional weight to a system is minimal compared to thick film-, wire-, or foil-based sensors. The thin, surface fabrication of the sensors is also expected to make them less susceptible to deep dose effects that affect thicker sensors. An overview of thin film sensors using thermocouples and resistive elements designed, fabricated, and demonstrated at GRC for aerospace applications exceeding 900°C is presented.

Fission Surface Power↗

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗

Robot Position Sensor Fault Tolerance

Robot systems in critical applications, such as those in space and nuclear environments, must be able to operate during component failure to complete important tasks. One failure mode that has received little attention is the failure of joint position sensors. Current fault tolerant designs require the addition of directly redundant position sensors which can affect joint design. A new method is proposed that utilizes analytical redundancy to allow for continued operation during joint position sensor failure. Joint torque sensors are used with a virtual passive torque controller to make the robot joint stable without position feedback and improve position tracking performance in the presence of unknown link dynamics and end-effector loading. Two Cartesian accelerometer based methods are proposed to determine the position of the joint. The joint specific position determination method utilizes two triaxial accelerometers attached to the link driven by the joint with the failed position sensor. The joint specific method is not computationally complex and the position error is bounded. The system wide position determination method utilizes accelerometers distributed on different robot links and the end-effector to determine the position of sets of multiple joints. The system wide method requires fewer accelerometers than the joint specific method to make all joint position sensors fault tolerant but is more computationally complex and has lower convergence properties. Experiments were conducted on a laboratory manipulator. Both position determination methods were shown to track the actual position satisfactorily. A controller using the position determination methods and the virtual passive torque controller was able to servo the joints to a desired position during position sensor failure.

Aldridge, Hal A.↗

The measurement of lightning environmental parameters related to interaction with electronic systems

The measurement of electromagnetic fields and related quantities in a lightning environment is a challenging problem, especially at high frequencies and/or in the immediate vicinity of the lightning arcs and corona. This paper reviews the techniques for accomplishing such measurements in these regimes with examples. These sensors are often the same as for the nuclear electromagnetic pulse (EMP), but significant differences also appear.

Baum, C. E.↗