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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Fundamental optical transitions in hexagonal boron nitride epilayers

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or “dark” in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (E g ), exciton binding energy (E x ), and binding energy of impurity bound excitons (E BX ) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Laser cooling of atoms at narrow optical transitions in fields with a polarisation gradient

The efficiency of the polarisation mechanisms of laser cooling of atoms is analysed using narrow optical transitions for which the recoil energy is greater than or comparable to the natural line width. By the example of atoms with the J{sub g} = 1 → J{sub e} = 2 optical transition (J{sub g} and J{sub e} are the total angular momenta of the ground and excited states) in the resonant light fields of σ{sub +} – σ{sub –} and lin⊥lin configurations, the analysis of the minimum achievable energies of laser-cooled atoms is performed. It is shown that the polarisation mechanisms of laser cooling under conditions of a significant influence of recoil effects become less efficient and do not lead to average kinetic energies of an ensemble of atoms below the Doppler limit. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Phonon-mediated temperature dependence of Er 3+ optical transitions in Er 2 O 3

Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of the temperature dependence of the transitions. We report measurements of the temperature dependent Er 3+ photoluminescence in single crystal Er 2 O 3 thin films epitaxially grown on Si(111) focused on transitions that involve the closely spaced Stark-split levels. Radiative intensities are compared to a model that includes relevant Stark-split states, single phonon-assisted excitations, and the well-established level population redistribution due to thermalization. This approach, applied to the individual Stark-split states and employing Er 2 O 3 specific single-phonon-assisted excitations, gives good agreement with experiment. This model allows us to demonstrate the difference in the electron-phonon coupling of the 4 S 3/2 and 2 H 11/2 states of Er 3+ in E 2 O 3 and suggests that the temperature dependence of Er 3+ emission intensity may vary significantly with small shifts in the wavelength (~0.1 nm) of the excitation source.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Anisotropic moiré optical transitions in twisted monolayer/bilayer phosphorene heterostructures

Moiré superlattices of van der Waals heterostructures provide a powerful way to engineer electronic structures of two-dimensional materials. Many novel quantum phenomena have emerged in graphene and transition metal dichalcogenide moiré systems. Twisted phosphorene offers another attractive system to explore moiré physics because phosphorene features an anisotropic rectangular lattice, different from isotropic hexagonal lattices previously reported. Here we report emerging anisotropic moiré optical transitions in twisted monolayer/bilayer phosphorenes. The optical resonances in phosphorene moiré superlattice depend sensitively on twist angle and are completely different from those in the constitute monolayer and bilayer phosphorene even for a twist angle as large as 19°. Our calculations reveal that the Γ-point direct bandgap and the rectangular lattice of phosphorene give rise to the remarkably strong moiré physics in large-twist-angle phosphorene heterostructures. This work highlights fresh opportunities to explore moiré physics in phosphorene and other van der Waals heterostructures with different lattice configurations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Quantum-amplified global-phase spectroscopy on an optical clock transition

Optical lattice clocks are at the forefront of precision metrology, operating near a standard quantum limit set by quantum noise. Harnessing quantum entanglement offers a promising route to surpass this limit; however, there are practical difficulties in terms of scalability and measurement resolution requirements. Here we adapt the holonomic quantum gate concept to develop a new Rabi-type ‘global-phase spectroscopy’ that uses the detuning-sensitive global Aharonov–Anandan phase19. With this approach, we can demonstrate quantum-amplified time-reversal spectroscopy on an optical clock transition that achieves directly measured 2.4(7) dB metrological gain and 4.0(8) dB improvement in laser noise sensitivity beyond the standard quantum limit. To this end, we introduce rotary echo to protect the dynamics from inhomogeneities in light–atom coupling and implement a laser-noise-cancelling differential measurement through symmetric phase encoding in two nuclear spin states. Our technique is not limited by measurement resolution, scales easily because of the global nature of entangling interaction and exhibits high resilience to typical experimental imperfections. As a result, we expect it to be broadly applicable to next-generation atomic clocks and other quantum sensors approaching the fundamental quantum precision limits.

Zaporski, Leon [Massachusetts Institute of Technol↗
DOE OSTI2023

Designing transparent conductors using forbidden optical transitions

Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In 2 O 3 (ITO); however, thus far, the presence of forbidden transitions has been neglected in the search for new p-type TCs. To address this, we first compute high-throughput absorption spectra across ~18, 000 semiconductors, showing that over half exhibit forbidden or weak optical transitions at their band edges. Next, we demonstrate that compounds with highly localized band-edge states are more likely to present forbidden transitions. Lastly, we search this set for p-type and n-type TCs with forbidden transitions and, by performing defect calculations, propose unexplored TC candidates such as ambipolar BeSiP 2 , p-type wurtzite BAs, and n-type Ba 2 InGaO 5 , among others. In conclusion, we share our dataset and recommend that future screenings for optical properties consider the impact of forbidden transitions.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Optical transitions in diamond at ultrahigh pressures

Optical studies on diamond at ultrahigh pressures are described which show that the unique properties of diamonds are affected by such stresses. Spectroscopic measurements show that the optical absorption edge shifts from UV to red with increasing pressures, and Raman scattering measurements how evidence for new structural transitions associated with large macroscopic deformation, beginning at a pressure of about 150 GPa. The changes are reversible and are associated with intense luminescence peaks at 2.0-2.2 eV under 458-514 nm radiation. These results may be related to the onset of bandgap closure in the approach to a new high-pressure phase. These spectral features must also be taken into account when diamond is used as optical windows for ultrahigh-pressure investigations.

Mao, H. K.↗
NASA NTRS1983

Study of multiple optical transitions in 87Rb using laser diodes

Recent work with laser diodes has indicated their potential usefulness in optically pumping atomic frequency standards. Various optical pumping schemes for (87)Rb incorporating such light sources at two D1 frequencies for experimental situations of either evacuated wall-coated cells or atomic beams are considered. Numerical integration of rate equations governing the level populations with arbitrary pumping light choices of intensity, D1 hyperfine transition(s), and polarization and subsequent calculation of scattered light provide a simplified 0-0 hyperfine signal analysis. By frequency modulating one laser diode, two optical transitions were excited in an evacuated wall-coated cell and a large delta m(F) = 1 hf signal was observed.

Newton, C. L. J.↗
DOE OSTI2024

Comparison of interband related optical transitions and excitons in ZnGeN 2 and GaN

The optical dielectric function of ZnGeN 2 is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)GW^ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in ε 2 to specific bands and k-points but does not include electron-hole interaction effects. The second includes electron-hole interaction or excitonic effects. The corresponding changes in the shape of ε 2 (ω) are found to be similar to those in GaN. The screened Coulomb interaction W^ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as ε∞ , were calculated separately by extrapolating the wave vector dependent macroscopic dielectric function in the long-wavelength limit. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the k-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor (ε∞/ε 0 ) 2 , which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. Here, the excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Interband optical transitions between confined and unconfined states in quantum wells

The interband optical absorption in single quantum wells (SQWs) due to transitions between confined states and unconfined continuum states (C-U transitions) were measured, calculated, and compared to absorption due to transitions involving pairs of confined states (C-C transiitons). An In(0.25)Ga(0.75)As/GaAs SQW with a 61-A well width was used in the experiment. A simple model describes how the slow-turnon absorption line shapes characterisic of SQWs evolve into sharp steplike features as more wells are added.

Ksendzov, A.↗
DOE OSTI2024

Broken Symmetry Optical Transitions in (6,5) Single-Walled Carbon Nanotubes Containing sp 3 Defects Revealed by First-Principles Theory

We present a first-principles many-body perturbation theory study of nitrophenyl-doped (6,5) single-walled nanotubes (SWCNTs) to understand how sp 3 doping impacts the excitonic properties. sp 3 -doped SWCNTs are promising as a class of optoelectronic materials with bright tunable photoluminescence, long spin coherence, and single-photon emission (SPE), motivating the study of spin excitations. We predict that the dopant results in a single unpaired spin localized around the defect site, which induces multiple low-energy excitonic peaks. By comparing optical absorption and photoluminescence from experiment and theory, we identify the transitions responsible for the red-shifted, defect-induced E 11 * peak, which has demonstrated SPE for some dopants; the presence of this state is due to both the symmetry-breaking associated with the defect and the presence of the defect-induced in-gap state. Furthermore, we find an asymmetry between the contribution of the two spin channels, suggesting that this system has potential for spin-selective optical transitions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Shape fluctuations and optical transition of He 2 * excimer tracers in superfluid He 4

Metastable He$_{2}^{*}$ excimer molecules have been utilized as tracer particles of the normal component in superfluid $^4$He (He II) which can be imaged via laser-induced fluorescence. These excimer molecules form tiny bubbles in He II and can bind to quantized vortices at sufficiently low temperatures, thereby allowing for direct visualization of vortex dynamics in an inviscid superfluid. However, the $a^{3}\Sigma^+_{u}$${\rightarrow}$$c^{3}\Sigma^+_{g}$ optical absorption line, which is responsible for the fluorescence imaging of the He$_{2}^{*}$ molecules, is controlled by fluctuations on the bubble shape, and its exact line profile is not known at low temperatures. In this paper, we present a bubble model for evaluating the surface fluctuation eigenmodes of the excimers in He II. The line profile of the $a^{3}\Sigma^+_{u}{\rightarrow}c^{3}\Sigma^+_{g}$ transition is calculated at different temperatures by considering both the zero-point and thermal fluctuations on the bubble shape. We show that, as the temperature drops from 2~K to 20 mK, the peak absorption strength is enhanced by a factor of about five, accompanying a blueshift of the peak location by about 2 nm. A double-peak line profile due to the rotational levels of the molecular core can be resolved. This bubble model also allows us to evaluate the stiffness of the He$_{2}^{*}$ bubbles and hence their diffusion constant in He II due to scattering off thermal phonons. Our results will aid the design of future experiments on imaging quantized vortices in He II using He$_{2}^{*}$ tracers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K

Based on a matched Ga{sub 0.47}In{sub 0.53}As/Al{sub 0.48}In{sub 0.52}As heteropair, we have developed a quantum cascade laser emitting at a wavelength of 7.4 μm. The chosen heterostructure with a relatively large number of quantum wells and barriers represents two mini-bands separated by a mini-gap with a localised doublet level near the upper mini-band, which provides a wide emission band (∼100 cm{sup −1}). In a pulse regime, the maximal laser operation temperature is 371 K. Such a high temperature is explained by two factors: a large energy of the transfer from the doublet to the upper mini-band and a large volt defect. The characteristic temperatures T{sub 0} are found, which are equal to 170 K for low (less than 300 K) temperatures and 270 K for the range of 300 − 370 K. In addition, optical cavity losses are determined to be 2.5 and 7.7 cm{sup −1} at temperatures of 80 and 254 K, respectively. The pulse power is 0.3 W at 80 K and 0.05 W at 293 K. (lasers, active media)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗